JP4017118B2 - 強誘電体を用いた記録媒体、記録装置および再生装置 - Google Patents
強誘電体を用いた記録媒体、記録装置および再生装置 Download PDFInfo
- Publication number
- JP4017118B2 JP4017118B2 JP2004015891A JP2004015891A JP4017118B2 JP 4017118 B2 JP4017118 B2 JP 4017118B2 JP 2004015891 A JP2004015891 A JP 2004015891A JP 2004015891 A JP2004015891 A JP 2004015891A JP 4017118 B2 JP4017118 B2 JP 4017118B2
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- layer
- ferroelectric
- energy beam
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000126 substance Substances 0.000 title description 3
- 230000005684 electric field Effects 0.000 claims description 69
- 230000010287 polarization Effects 0.000 claims description 65
- 230000008859 change Effects 0.000 claims description 27
- 230000002269 spontaneous effect Effects 0.000 claims description 24
- 238000001514 detection method Methods 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 12
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 48
- 238000000034 method Methods 0.000 description 31
- 239000000463 material Substances 0.000 description 19
- 230000015654 memory Effects 0.000 description 17
- 230000003287 optical effect Effects 0.000 description 15
- 230000006870 function Effects 0.000 description 14
- 239000010409 thin film Substances 0.000 description 11
- 230000010355 oscillation Effects 0.000 description 10
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 9
- 239000007787 solid Substances 0.000 description 8
- 230000006378 damage Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/04—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using record carriers having variable electric resistance; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B11/00—Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Optical Recording Or Reproduction (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004015891A JP4017118B2 (ja) | 2004-01-23 | 2004-01-23 | 強誘電体を用いた記録媒体、記録装置および再生装置 |
| US11/038,497 US20050163021A1 (en) | 2004-01-23 | 2005-01-21 | Recording medium using ferroelectric substance, recording apparatus and reproducing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004015891A JP4017118B2 (ja) | 2004-01-23 | 2004-01-23 | 強誘電体を用いた記録媒体、記録装置および再生装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005209300A JP2005209300A (ja) | 2005-08-04 |
| JP2005209300A5 JP2005209300A5 (https=) | 2006-05-25 |
| JP4017118B2 true JP4017118B2 (ja) | 2007-12-05 |
Family
ID=34792458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004015891A Expired - Fee Related JP4017118B2 (ja) | 2004-01-23 | 2004-01-23 | 強誘電体を用いた記録媒体、記録装置および再生装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050163021A1 (https=) |
| JP (1) | JP4017118B2 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6690602B1 (en) * | 2002-04-08 | 2004-02-10 | Advanced Micro Devices, Inc. | Algorithm dynamic reference programming |
| US6700815B2 (en) * | 2002-04-08 | 2004-03-02 | Advanced Micro Devices, Inc. | Refresh scheme for dynamic page programming |
| KR100590564B1 (ko) | 2004-10-29 | 2006-06-19 | 삼성전자주식회사 | 이방성 전도층을 구비하는 강유전체 기록 매체, 이를구비하는 기록 장치 및 그 기록 방법 |
| US7782741B2 (en) * | 2007-01-18 | 2010-08-24 | Seagate Technology Llc | Probe-scanned ferroelectric media with imprinted regions |
| RU171070U1 (ru) * | 2016-06-28 | 2017-05-18 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Московский технологический университет" | Устройство записи информации на сегнетоэлектрическом носителе |
| US11087791B1 (en) * | 2020-05-05 | 2021-08-10 | Western Digital Technologies, Inc. | Data storage device with voltage-assisted magnetic recording (VAMR) for high density magnetic recording |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2890011B2 (ja) * | 1992-08-19 | 1999-05-10 | 富士写真フイルム株式会社 | 情報記録方法 |
| JPH09120593A (ja) * | 1995-08-23 | 1997-05-06 | Sony Corp | 記録再生装置 |
| JP4771324B2 (ja) * | 2001-09-10 | 2011-09-14 | パイオニア株式会社 | 誘電体情報装置、テープ状媒体記録再生装置及びディスク状媒体記録再生装置 |
| US7379412B2 (en) * | 2004-04-16 | 2008-05-27 | Nanochip, Inc. | Methods for writing and reading highly resolved domains for high density data storage |
| KR100590564B1 (ko) * | 2004-10-29 | 2006-06-19 | 삼성전자주식회사 | 이방성 전도층을 구비하는 강유전체 기록 매체, 이를구비하는 기록 장치 및 그 기록 방법 |
-
2004
- 2004-01-23 JP JP2004015891A patent/JP4017118B2/ja not_active Expired - Fee Related
-
2005
- 2005-01-21 US US11/038,497 patent/US20050163021A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005209300A (ja) | 2005-08-04 |
| US20050163021A1 (en) | 2005-07-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4274571B2 (ja) | 記録再生ヘッド及び記録再生装置 | |
| JP3701268B2 (ja) | 誘電体記録装置、誘電体再生装置及び誘電体記録再生装置 | |
| JP3954457B2 (ja) | 誘電体記録媒体及び誘電体記録再生装置 | |
| JPH04212739A (ja) | 記録再生方法及び装置 | |
| JP4017118B2 (ja) | 強誘電体を用いた記録媒体、記録装置および再生装置 | |
| JPH01133239A (ja) | 情報記録再生装置および情報記録媒体 | |
| JP4102096B2 (ja) | 電子放出を用いた高密度情報記憶装置とこれを用いた情報の書込み及び読出し並びに消去方法 | |
| JP5400731B2 (ja) | 磁気記録媒体、磁気再生装置、磁気再生方法 | |
| JP4328355B2 (ja) | 強誘電体記録媒体用の情報再生装置 | |
| JP7750579B2 (ja) | 誘電体再生装置および誘電体記録再生装置 | |
| JP2790716B2 (ja) | 光磁気記録装置 | |
| KR100519772B1 (ko) | 스핀 분극된 전자를 이용한 자성매체 및 자성매체를이용한 정보기록장치 및 기록방법 | |
| JP2006268894A (ja) | 誘電体記録・再生装置および記録方法ならびにその電極 | |
| JP2968610B2 (ja) | 情報記録再生装置 | |
| JP4572756B2 (ja) | 強誘電体層への記録方法および強誘電体層への記録装置 | |
| JPH06236585A (ja) | 情報記録再生方法 | |
| JP2009134852A (ja) | ナノ探針加熱装置及びこれを用いた熱補助磁気記録ヘッド | |
| JPH0453003A (ja) | 光磁気再生装置 | |
| JPH10172188A (ja) | 情報記録方法および情報記録装置 | |
| JPH1196609A (ja) | 光磁気情報再生装置 | |
| JPH1092038A (ja) | 光磁気記録再生装置 | |
| JP2004253044A (ja) | 光アシスト磁気記録ディスク装置および光アシスト磁気記録ディスク | |
| JPS61269202A (ja) | 光磁気記録再生装置 | |
| KR20000042134A (ko) | 광자기 기록매체 및 그 재생방법 | |
| JPH02249158A (ja) | 記録再生装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060329 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060329 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070206 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070405 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070904 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070913 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100928 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100928 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110928 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120928 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120928 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130928 Year of fee payment: 6 |
|
| LAPS | Cancellation because of no payment of annual fees |