JP4000059B2 - 半導体基板の研磨 - Google Patents

半導体基板の研磨 Download PDF

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Publication number
JP4000059B2
JP4000059B2 JP2002556923A JP2002556923A JP4000059B2 JP 4000059 B2 JP4000059 B2 JP 4000059B2 JP 2002556923 A JP2002556923 A JP 2002556923A JP 2002556923 A JP2002556923 A JP 2002556923A JP 4000059 B2 JP4000059 B2 JP 4000059B2
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JP
Japan
Prior art keywords
insulating layer
polyethyleneimine
barrier layer
polishing composition
cmp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2002556923A
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English (en)
Japanese (ja)
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JP2004526301A (ja
JP2004526301A5 (enExample
Inventor
ルーオ，チュリャン
イェ，チャンチ
ブロック，ケリー・エイチ
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DuPont Electronic Materials Holding Inc
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DuPont Electronic Materials Holding Inc
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Filing date
Publication date
Priority claimed from US09/759,583 external-priority patent/US20020132560A1/en
Application filed by DuPont Electronic Materials Holding Inc filed Critical DuPont Electronic Materials Holding Inc
Publication of JP2004526301A publication Critical patent/JP2004526301A/ja
Publication of JP2004526301A5 publication Critical patent/JP2004526301A5/ja
Application granted granted Critical
Publication of JP4000059B2 publication Critical patent/JP4000059B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2002556923A 2001-01-12 2002-01-09 半導体基板の研磨 Expired - Fee Related JP4000059B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/759,583 US20020132560A1 (en) 2001-01-12 2001-01-12 Polishing method for selective chemical mechanical polishing of semiconductor substrates
US10/005,253 US6676718B2 (en) 2001-01-12 2001-12-04 Polishing of semiconductor substrates
PCT/US2002/000707 WO2002056351A2 (en) 2001-01-12 2002-01-09 Polishing of semiconductor substrates

Publications (3)

Publication Number Publication Date
JP2004526301A JP2004526301A (ja) 2004-08-26
JP2004526301A5 JP2004526301A5 (enExample) 2005-12-22
JP4000059B2 true JP4000059B2 (ja) 2007-10-31

Family

ID=26674130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002556923A Expired - Fee Related JP4000059B2 (ja) 2001-01-12 2002-01-09 半導体基板の研磨

Country Status (5)

Country Link
US (1) US6676718B2 (enExample)
EP (1) EP1352418A2 (enExample)
JP (1) JP4000059B2 (enExample)
TW (1) TWI246532B (enExample)
WO (1) WO2002056351A2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7416680B2 (en) * 2001-10-12 2008-08-26 International Business Machines Corporation Self-cleaning colloidal slurry composition and process for finishing a surface of a substrate
US20040082274A1 (en) * 2002-10-24 2004-04-29 Yaojian Leng Polishing slurry used for copper chemical mechanical polishing (CMP) process
US6916742B2 (en) * 2003-02-27 2005-07-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Modular barrier removal polishing slurry
US7241725B2 (en) * 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US7022255B2 (en) * 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US20050194562A1 (en) * 2004-02-23 2005-09-08 Lavoie Raymond L.Jr. Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers
JP4532149B2 (ja) * 2004-03-30 2010-08-25 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060135045A1 (en) * 2004-12-17 2006-06-22 Jinru Bian Polishing compositions for reducing erosion in semiconductor wafers
JP4918223B2 (ja) * 2005-01-13 2012-04-18 ニッタ・ハース株式会社 シリコンウエハ研磨用組成物およびシリコンウエハの研磨方法
US7179159B2 (en) * 2005-05-02 2007-02-20 Applied Materials, Inc. Materials for chemical mechanical polishing
JP5121128B2 (ja) * 2005-06-20 2013-01-16 ニッタ・ハース株式会社 半導体研磨用組成物
KR100813100B1 (ko) * 2006-06-29 2008-03-17 성균관대학교산학협력단 실시간 확장 가능한 스테레오 매칭 시스템 및 방법
US20100087065A1 (en) * 2007-01-31 2010-04-08 Advanced Technology Materials, Inc. Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications
US7696095B2 (en) * 2007-02-23 2010-04-13 Ferro Corporation Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide
JP5507909B2 (ja) * 2009-07-14 2014-05-28 東京エレクトロン株式会社 成膜方法
US9203030B2 (en) * 2011-05-16 2015-12-01 Georgia Tech Research Corporation Recyclable organic solar cells on substrates comprising cellulose nanocrystals (CNC)
JP6001532B2 (ja) * 2011-05-24 2016-10-05 株式会社クラレ 化学機械研磨用エロージョン防止剤、化学機械研磨用スラリーおよび化学機械研磨方法
US20180244955A1 (en) * 2017-02-28 2018-08-30 Versum Materials Us, Llc Chemical Mechanical Planarization of Films Comprising Elemental Silicon
KR20220083728A (ko) * 2019-10-15 2022-06-20 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 연마 조성물 및 이의 사용 방법

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4867757A (en) 1988-09-09 1989-09-19 Nalco Chemical Company Lapping slurry compositions with improved lap rate
JP2714411B2 (ja) 1988-12-12 1998-02-16 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウェハーのファイン研摩用組成物
JP2987171B2 (ja) * 1990-06-01 1999-12-06 イー・アイ・デュポン・ドゥ・ヌムール・アンド・カンパニー ウエハーのファイン研磨用濃縮組成物
WO1996038262A1 (en) 1995-06-01 1996-12-05 Rodel, Inc. Compositions for polishing silicon wafers and methods
US5614444A (en) 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5676587A (en) 1995-12-06 1997-10-14 International Business Machines Corporation Selective polish process for titanium, titanium nitride, tantalum and tantalum nitride
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US5756398A (en) 1997-03-17 1998-05-26 Rodel, Inc. Composition and method for polishing a composite comprising titanium
KR100581649B1 (ko) 1998-06-10 2006-05-23 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스, 인코포레이티드 금속 ｃｍｐ에서 광택화를 위한 조성물 및 방법
WO2000024842A1 (en) 1998-10-23 2000-05-04 Arch Specialty Chemicals, Inc. A chemical mechanical polishing slurry system having an activator solution
US6083840A (en) 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
JP4053165B2 (ja) 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
US6503418B2 (en) 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
JP2003516626A (ja) 1999-12-07 2003-05-13 キャボット マイクロエレクトロニクス コーポレイション 化学的機械研磨方法
US6524168B2 (en) * 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
FR2848219B1 (fr) 2002-12-09 2006-12-01 Centre Nat Rech Scient Materiau composite utilisable comme revetement lubrifiant

Also Published As

Publication number Publication date
JP2004526301A (ja) 2004-08-26
US6676718B2 (en) 2004-01-13
TWI246532B (en) 2006-01-01
US20020132563A1 (en) 2002-09-19
WO2002056351A2 (en) 2002-07-18
WO2002056351A3 (en) 2002-11-28
EP1352418A2 (en) 2003-10-15

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