JP3995575B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP3995575B2
JP3995575B2 JP2002287391A JP2002287391A JP3995575B2 JP 3995575 B2 JP3995575 B2 JP 3995575B2 JP 2002287391 A JP2002287391 A JP 2002287391A JP 2002287391 A JP2002287391 A JP 2002287391A JP 3995575 B2 JP3995575 B2 JP 3995575B2
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Japan
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group
carbon atoms
alkyl group
examples
atom
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JP2002287391A
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Japanese (ja)
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JP2004126013A (ja
JP2004126013A5 (enrdf_load_stackoverflow
Inventor
文之 西山
健一郎 佐藤
邦彦 児玉
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2002287391A priority Critical patent/JP3995575B2/ja
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Publication of JP2004126013A5 publication Critical patent/JP2004126013A5/ja
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2002287391A 2002-09-30 2002-09-30 ポジ型レジスト組成物 Expired - Fee Related JP3995575B2 (ja)

Priority Applications (1)

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JP2002287391A JP3995575B2 (ja) 2002-09-30 2002-09-30 ポジ型レジスト組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002287391A JP3995575B2 (ja) 2002-09-30 2002-09-30 ポジ型レジスト組成物

Publications (3)

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JP2004126013A JP2004126013A (ja) 2004-04-22
JP2004126013A5 JP2004126013A5 (enrdf_load_stackoverflow) 2005-09-29
JP3995575B2 true JP3995575B2 (ja) 2007-10-24

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JP (1) JP3995575B2 (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120042670A (ko) 2010-10-25 2012-05-03 신에쓰 가가꾸 고교 가부시끼가이샤 술포늄염, 레지스트 재료 및 패턴 형성 방법
US8535869B2 (en) 2010-08-23 2013-09-17 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, resist composition, and patterning process
EP2664633A1 (en) 2012-02-27 2013-11-20 Shin-Etsu Chemical Co., Ltd. Polymer, making method, resist composition, and patterning process
US8703384B2 (en) 2010-11-25 2014-04-22 Shin-Etsu Chemical Co., Ltd. Positive resist composition and patterning process
KR20140091443A (ko) 2013-01-11 2014-07-21 신에쓰 가가꾸 고교 가부시끼가이샤 술포늄염, 레지스트 재료 및 패턴 형성 방법
US8808964B2 (en) 2010-08-26 2014-08-19 Shin-Etsu Chemical Co., Ltd. Nitrogen-containing organic compound, chemically amplified positive resist composition, and patterning process
US9207534B2 (en) 2011-01-14 2015-12-08 Shin-Etsu Chemical Co., Ltd. Nitrogen-containing monomer, polymer, resist composition, and patterning process
US9256127B2 (en) 2014-05-09 2016-02-09 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, resist composition, and patterning process
EP2993520A1 (en) 2014-09-04 2016-03-09 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
EP3035121A2 (en) 2014-12-18 2016-06-22 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, resist composition, and patterning process
EP3168207A1 (en) 2015-11-10 2017-05-17 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, resist composition, and patterning process

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4754265B2 (ja) * 2005-05-17 2011-08-24 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP2007079552A (ja) * 2005-08-17 2007-03-29 Jsr Corp 感放射線性樹脂組成物
JP5588706B2 (ja) * 2010-03-12 2014-09-10 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜及びパターン形成方法
JP5561184B2 (ja) * 2011-01-26 2014-07-30 信越化学工業株式会社 スルホニウム塩
JP5723648B2 (ja) * 2011-03-25 2015-05-27 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP7223765B2 (ja) * 2018-09-05 2023-02-16 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8535869B2 (en) 2010-08-23 2013-09-17 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, resist composition, and patterning process
US8808964B2 (en) 2010-08-26 2014-08-19 Shin-Etsu Chemical Co., Ltd. Nitrogen-containing organic compound, chemically amplified positive resist composition, and patterning process
KR20120042670A (ko) 2010-10-25 2012-05-03 신에쓰 가가꾸 고교 가부시끼가이샤 술포늄염, 레지스트 재료 및 패턴 형성 방법
US8597869B2 (en) 2010-10-25 2013-12-03 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, resist composition, and patterning process
US8703384B2 (en) 2010-11-25 2014-04-22 Shin-Etsu Chemical Co., Ltd. Positive resist composition and patterning process
US9207534B2 (en) 2011-01-14 2015-12-08 Shin-Etsu Chemical Co., Ltd. Nitrogen-containing monomer, polymer, resist composition, and patterning process
EP2664633A1 (en) 2012-02-27 2013-11-20 Shin-Etsu Chemical Co., Ltd. Polymer, making method, resist composition, and patterning process
US10234757B2 (en) 2012-02-27 2019-03-19 Shin-Etsu Chemical Co., Ltd. Polymer, making method, resist composition, and patterning process
KR20140091443A (ko) 2013-01-11 2014-07-21 신에쓰 가가꾸 고교 가부시끼가이샤 술포늄염, 레지스트 재료 및 패턴 형성 방법
US8956803B2 (en) 2013-01-11 2015-02-17 Shin-Etsu Chemical Co., Ltd. Sulfonium salt, resist composition, and patterning process
US9256127B2 (en) 2014-05-09 2016-02-09 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, resist composition, and patterning process
EP2993520A1 (en) 2014-09-04 2016-03-09 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
US10131730B2 (en) 2014-09-04 2018-11-20 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
EP3035121A2 (en) 2014-12-18 2016-06-22 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, resist composition, and patterning process
EP3168207A1 (en) 2015-11-10 2017-05-17 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, resist composition, and patterning process
EP3415494A1 (en) 2015-11-10 2018-12-19 Shin-Etsu Chemical Co., Ltd. Monomer, polymer, resist composition, and patterning process

Also Published As

Publication number Publication date
JP2004126013A (ja) 2004-04-22

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