JP3980571B2 - Mems素子を形成する方法 - Google Patents
Mems素子を形成する方法 Download PDFInfo
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- JP3980571B2 JP3980571B2 JP2004153542A JP2004153542A JP3980571B2 JP 3980571 B2 JP3980571 B2 JP 3980571B2 JP 2004153542 A JP2004153542 A JP 2004153542A JP 2004153542 A JP2004153542 A JP 2004153542A JP 3980571 B2 JP3980571 B2 JP 3980571B2
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- 238000000034 method Methods 0.000 title claims description 17
- 239000010410 layer Substances 0.000 claims description 111
- 239000000463 material Substances 0.000 claims description 45
- 239000011241 protective layer Substances 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000003989 dielectric material Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005288 electromagnetic effect Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000005676 thermoelectric effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00777—Preserve existing structures from alteration, e.g. temporary protection during manufacturing
- B81C1/00785—Avoid chemical alteration, e.g. contamination, oxidation or unwanted etching
- B81C1/00801—Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0181—See-saws
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0714—Forming the micromechanical structure with a CMOS process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0757—Topology for facilitating the monolithic integration
- B81C2203/0771—Stacking the electronic processing unit and the micromechanical structure
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Description
Claims (7)
- MEMS素子を形成する方法であって、
ベース材料(210)と、該ベース材料の第1の表面(212)上に形成された少なくとも1つの導電層(220)とを含む下部構造(200)を設けるステップと、
前記下部構造の前記少なくとも1つの導電層の上に誘電体層(250)を形成するステップと、
前記誘電体層の上に保護層(252)を形成するステップと、
前記下部構造(200)の電気的コンタクトエリア(202)において前記保護層(252)の上にエッチングに耐え得る材料(254)を堆積させ、形成すべき電気的コンタクトパッド(240)に関する境界を前記エッチングに耐え得る材料(254)の内側境界によって画定するステップと、
前記保護層(252)の上に犠牲層(256)を形成するステップと、
前記下部構造(200)の駆動領域(204)内において前記犠牲層(256)の上に駆動素子(40)を形成するステップと、
前記駆動素子(40)及び前記犠牲層(256)の上にマスク層(260)を形成し、前記形成すべき電気的コンタクトパッド(240)の上にある前記マスク層(260)に、前記エッチングに耐え得る材料(254)の外側境界よりも小さく、前記エッチングに耐え得る材料(254)の内側境界よりも大きいマスク開口部(262)を形成するステップと、
前記犠牲層(256)を貫通し、前記電気的コンタクトパッドに関する前記境界内を前記保護層(252)及び前記誘電体層(250)を貫通して、前記下部構造の前記少なくとも1つの導電層までエッチングすることにより、前記下部構造(200)の前記少なくとも1つの導電層(220)まで続く開口部(242)をエッチングするステップと、
前記駆動素子(40)と前記保護層(252)の間にある前記犠牲層(256)を除去するステップと
からなる方法。 - 前記下部構造が相補形金属酸化膜半導体構造を含む、請求項1に記載の方法。
- 前記下部構造の前記ベース材料がシリコンを含み、前記下部構造の前記少なくとも1つの導電層がアルミニウムを含む、請求項1に記載の方法。
- 前記保護層の上に導電性材料(254)を堆積させるステップと、前記駆動領域において前記保護層及び前記誘電体層を貫通して前記導電性材料を前記下部構造の少なくとも1つの導電層に導通させるステップとを更に含む、請求項1に記載の方法。
- 前記駆動領域(204)内において駆動素子(40)を形成するステップは、前記犠牲層(256)を貫通して前記駆動素子(40)を前記導電性材料(254)に導通させることを含む、請求項4に記載の方法。
- 前記駆動領域(204)内において前記保護層の上に少なくとも1つの電極(60)を形成するステップを更に含み、
前記駆動素子(40)は、前記少なくとも1つの電極に対する電気信号の印加に応答して動くように構成される、請求項5に記載の方法。 - 前記犠牲層(256)を除去するステップより前に、
前記マスク層(260)を除去するステップと、
前記電気的コンタクトエリア内にある前記開口部(242)に保護材料(264)を一時的に充填するステップと
を更に含み、前記駆動素子(40)と前記保護層(252)の間にある犠牲層(256)を除去するステップは、前記犠牲層(256)をエッチングすることを含む、請求項1に記載の方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/454,423 US6917459B2 (en) | 2003-06-03 | 2003-06-03 | MEMS device and method of forming MEMS device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004358654A JP2004358654A (ja) | 2004-12-24 |
JP3980571B2 true JP3980571B2 (ja) | 2007-09-26 |
Family
ID=33159550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004153542A Expired - Lifetime JP3980571B2 (ja) | 2003-06-03 | 2004-05-24 | Mems素子を形成する方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6917459B2 (ja) |
EP (1) | EP1484281B1 (ja) |
JP (1) | JP3980571B2 (ja) |
KR (1) | KR101043460B1 (ja) |
CN (1) | CN1572719B (ja) |
DE (1) | DE60316122T2 (ja) |
SG (1) | SG115612A1 (ja) |
TW (1) | TWI225845B (ja) |
Families Citing this family (95)
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2003
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EP1484281A1 (en) | 2004-12-08 |
DE60316122D1 (de) | 2007-10-18 |
EP1484281B1 (en) | 2007-09-05 |
US6917459B2 (en) | 2005-07-12 |
CN1572719A (zh) | 2005-02-02 |
DE60316122T2 (de) | 2008-05-29 |
SG115612A1 (en) | 2005-10-28 |
JP2004358654A (ja) | 2004-12-24 |
KR101043460B1 (ko) | 2011-06-23 |
TWI225845B (en) | 2005-01-01 |
KR20040104408A (ko) | 2004-12-10 |
CN1572719B (zh) | 2010-09-29 |
TW200427621A (en) | 2004-12-16 |
US20040245588A1 (en) | 2004-12-09 |
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