JP3978145B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP3978145B2
JP3978145B2 JP2003031527A JP2003031527A JP3978145B2 JP 3978145 B2 JP3978145 B2 JP 3978145B2 JP 2003031527 A JP2003031527 A JP 2003031527A JP 2003031527 A JP2003031527 A JP 2003031527A JP 3978145 B2 JP3978145 B2 JP 3978145B2
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JP
Japan
Prior art keywords
film
silicon oxynitride
oxynitride film
silicon
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2003031527A
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English (en)
Japanese (ja)
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JP2003249661A (ja
JP2003249661A5 (enExample
Inventor
舜平 山崎
勇臣 浅見
徹 高山
律子 河崎
広樹 安達
康行 荒井
直哉 坂本
昌彦 早川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2003031527A priority Critical patent/JP3978145B2/ja
Publication of JP2003249661A publication Critical patent/JP2003249661A/ja
Publication of JP2003249661A5 publication Critical patent/JP2003249661A5/ja
Application granted granted Critical
Publication of JP3978145B2 publication Critical patent/JP3978145B2/ja
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JP2003031527A 1998-12-29 2003-02-07 半導体装置の作製方法 Expired - Fee Related JP3978145B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003031527A JP3978145B2 (ja) 1998-12-29 2003-02-07 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP10-377418 1998-12-29
JP37741898 1998-12-29
JP849499 1999-01-14
JP11-8494 1999-01-14
JP2003031527A JP3978145B2 (ja) 1998-12-29 2003-02-07 半導体装置の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP37201399A Division JP3977974B2 (ja) 1998-12-29 1999-12-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2003249661A JP2003249661A (ja) 2003-09-05
JP2003249661A5 JP2003249661A5 (enExample) 2007-02-15
JP3978145B2 true JP3978145B2 (ja) 2007-09-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003031527A Expired - Fee Related JP3978145B2 (ja) 1998-12-29 2003-02-07 半導体装置の作製方法

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JP (1) JP3978145B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034724B2 (en) 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5252877B2 (ja) 2006-11-07 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7982250B2 (en) * 2007-09-21 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8044464B2 (en) * 2007-09-21 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5575455B2 (ja) * 2009-10-29 2014-08-20 株式会社ジャパンディスプレイ 表示装置の製造方法
KR20180088759A (ko) * 2010-07-27 2018-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102291463B1 (ko) * 2015-01-22 2021-08-19 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
TWI560486B (en) * 2016-01-05 2016-12-01 Innolux Corp Display panel
JP7258826B2 (ja) * 2020-06-30 2023-04-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム

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JP2003249661A (ja) 2003-09-05

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