JP3949640B2 - トランジスタの保護を備えた半ブリッジ高電圧ゲートドライバ - Google Patents
トランジスタの保護を備えた半ブリッジ高電圧ゲートドライバ Download PDFInfo
- Publication number
- JP3949640B2 JP3949640B2 JP2003373517A JP2003373517A JP3949640B2 JP 3949640 B2 JP3949640 B2 JP 3949640B2 JP 2003373517 A JP2003373517 A JP 2003373517A JP 2003373517 A JP2003373517 A JP 2003373517A JP 3949640 B2 JP3949640 B2 JP 3949640B2
- Authority
- JP
- Japan
- Prior art keywords
- fault
- output stage
- external
- integrated circuit
- shutdown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/337—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration
- H02M3/3376—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration with automatic control of output voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Power Conversion In General (AREA)
- Electronic Switches (AREA)
- Inverter Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42349602P | 2002-10-31 | 2002-10-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004201486A JP2004201486A (ja) | 2004-07-15 |
| JP2004201486A5 JP2004201486A5 (enExample) | 2005-05-26 |
| JP3949640B2 true JP3949640B2 (ja) | 2007-07-25 |
Family
ID=32312665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003373517A Expired - Fee Related JP3949640B2 (ja) | 2002-10-31 | 2003-10-31 | トランジスタの保護を備えた半ブリッジ高電圧ゲートドライバ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US6859087B2 (enExample) |
| JP (1) | JP3949640B2 (enExample) |
| DE (1) | DE10351033A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11519954B2 (en) | 2019-08-27 | 2022-12-06 | Analog Devices International Unlimited Company | Apparatus and method to achieve fast-fault detection on power semiconductor devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7031124B2 (en) * | 2003-01-15 | 2006-04-18 | International Rectifier Corporation | Synchronous soft-shutdown gate drive circuit |
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| JP4838233B2 (ja) * | 2004-03-12 | 2011-12-14 | エムケイエス インストゥルメンツ, インコーポレイテッド | スイッチング電源用の制御回路 |
| US7106105B2 (en) * | 2004-07-21 | 2006-09-12 | Fairchild Semiconductor Corporation | High voltage integrated circuit driver with a high voltage PMOS bootstrap diode emulator |
| US20060044051A1 (en) * | 2004-08-24 | 2006-03-02 | International Rectifier Corporation | Bootstrap diode emulator with dynamic back-gate biasing and short-circuit protection |
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| US7479770B2 (en) * | 2005-04-28 | 2009-01-20 | Texas Instruments Incorporated | System and method for driving a power field-effect transistor (FET) |
| JP4315125B2 (ja) * | 2005-05-11 | 2009-08-19 | トヨタ自動車株式会社 | 電圧駆動型半導体素子の駆動装置 |
| GB2426395B (en) * | 2005-05-19 | 2009-01-28 | Siemens Ag | Gate driver |
| DE102005023653B3 (de) * | 2005-05-23 | 2006-05-04 | Semikron Elektronik Gmbh & Co. Kg | Schaltungsanordnung mit Fehlerrückmeldung zur Ansteuerung von Leistungshalbleiterschaltern und zugehöriges Verfahren |
| US20070176855A1 (en) * | 2006-01-31 | 2007-08-02 | International Rectifier Corporation | Diagnostic/protective high voltage gate driver ic (hvic) for pdp |
| US7554272B2 (en) * | 2006-02-27 | 2009-06-30 | Supertex, Inc. | Low noise electroluminescent lamp (EL) driver and method therefor |
| US8154324B2 (en) * | 2006-03-13 | 2012-04-10 | International Rectifier Corporation | Half bridge driver input filter |
| US7720619B2 (en) * | 2006-08-04 | 2010-05-18 | Schweitzer Engineering Laboratories, Inc. | Systems and methods for detecting high-impedance faults in a multi-grounded power distribution system |
| DE102006036569B4 (de) * | 2006-08-04 | 2015-02-26 | Infineon Technologies Austria Ag | Treiberschaltung eines Halbleiter-Leistungsschaltelementes |
| US7760005B2 (en) * | 2007-03-29 | 2010-07-20 | General Electric Company | Power electronic module including desaturation detection diode |
| US7570101B1 (en) | 2008-02-27 | 2009-08-04 | The United States Of America As Represented By The United States Department Of Energy | Advanced insulated gate bipolar transistor gate drive |
| EP2216905B1 (en) * | 2009-02-05 | 2012-08-29 | Abb Oy | Method of controlling an IGBT and a gate driver |
| US8692815B2 (en) * | 2009-11-06 | 2014-04-08 | Bose Corporation | Touch-based user interface user selection accuracy enhancement |
| JP5359918B2 (ja) * | 2010-02-16 | 2013-12-04 | 三菱電機株式会社 | 半導体装置 |
| US8400739B2 (en) * | 2011-02-28 | 2013-03-19 | General Electric Company | System and method for operating inverters |
| US8781764B2 (en) | 2011-03-16 | 2014-07-15 | Deere & Company | System for detecting a short circuit associated with a direct current bus |
| JP5321768B1 (ja) | 2011-11-11 | 2013-10-23 | 富士電機株式会社 | 半導体装置 |
| RU2483437C1 (ru) * | 2011-12-08 | 2013-05-27 | Учреждение Российской академии наук Институт проблем проектирования в микроэлектронике РАН (ИППМ РАН) | Формирователь импульсов напряжения с устройством защиты от отрицательных выбросов при подключении индуктивной нагрузки |
| US8829949B2 (en) | 2012-01-17 | 2014-09-09 | Franc Zajc | Method and apparatus for driving a voltage controlled power switch device |
| US20150171770A1 (en) * | 2012-04-24 | 2015-06-18 | General Electric Company | Differential gate resistor design for switching modules in power converter |
| CN103532362B (zh) * | 2012-07-04 | 2016-01-27 | 北京精密机电控制设备研究所 | 一种防止功率模块驱动桥臂上下功率管直通的安全电路 |
| WO2014059371A1 (en) | 2012-10-12 | 2014-04-17 | Schweitzer Engineering Laboratories, Inc. | Coordinated high-impedance fault detection systems and methods |
| US8885310B2 (en) * | 2012-10-31 | 2014-11-11 | Freescale Semiconductor, Inc. | Gate driver with desaturation detection and active clamping |
| US8692587B1 (en) | 2012-12-28 | 2014-04-08 | Nxp B.V. | Single under voltage monitor for gate driver circuits |
| GB2509987B (en) * | 2013-01-22 | 2020-01-22 | Nidec Control Techniques Ltd | A desaturation detection circuit for use between the desaturation detection input of an optocoupler and the output of a power switching device |
| US8913352B2 (en) * | 2013-02-01 | 2014-12-16 | GM Global Technology Operations LLC | Method and apparatus for detecting a desaturation fault in an inverter module |
| GB201302407D0 (en) * | 2013-02-12 | 2013-03-27 | Rolls Royce Plc | A thermal controller |
| US9059076B2 (en) | 2013-04-01 | 2015-06-16 | Transphorm Inc. | Gate drivers for circuits based on semiconductor devices |
| US9270180B2 (en) * | 2013-05-03 | 2016-02-23 | Texas Instruments Deutschland Gmbh | DC-DC converter with adaptive minimum on-time |
| CN104143903B (zh) * | 2013-05-06 | 2016-12-28 | 立锜科技股份有限公司 | 电源转换电路的控制信号产生电路和相关的逻辑重生电路 |
| KR101529149B1 (ko) * | 2013-09-02 | 2015-06-17 | 엘에스산전 주식회사 | 게이트 구동 장치 |
| KR102066035B1 (ko) * | 2013-12-12 | 2020-01-14 | 온세미컨덕터코리아 주식회사 | 감지저항단락 판단 회로 및 이를 포함하는 스위치 제어 회로와 전력 공급 장치 |
| US9543940B2 (en) | 2014-07-03 | 2017-01-10 | Transphorm Inc. | Switching circuits having ferrite beads |
| CN105940607B (zh) * | 2014-07-14 | 2018-10-26 | 富士电机株式会社 | 半导体装置 |
| US9322852B2 (en) | 2014-07-15 | 2016-04-26 | Ford Global Technologies, Llc | Gate drive under-voltage detection |
| US9590494B1 (en) * | 2014-07-17 | 2017-03-07 | Transphorm Inc. | Bridgeless power factor correction circuits |
| DE112016000204T5 (de) * | 2015-05-15 | 2017-08-24 | Fuji Electric Co., Ltd. | Ansteuerschaltung |
| DE102015110423B4 (de) * | 2015-06-29 | 2023-01-05 | Halla Visteon Climate Control Corporation | Leistungselektronik-Baugruppe zur Verhinderung des parasitären Einschaltens von Leistungsschaltern |
| US10389227B2 (en) * | 2015-10-19 | 2019-08-20 | Mitsubishi Electric Corporation | Semiconductor device drive circuit and inverter device with desaturation detection |
| WO2017098624A1 (ja) | 2015-12-10 | 2017-06-15 | 三菱電機株式会社 | 半導体デバイス駆動回路 |
| EP3229373A1 (en) | 2016-04-06 | 2017-10-11 | Volke Andreas | Soft shutdown modular circuitry for power semiconductor switches |
| US10243546B2 (en) * | 2016-05-25 | 2019-03-26 | Efficient Power Conversion Corporation | Enhancement mode FET gate driver IC |
| US10161986B2 (en) | 2016-10-17 | 2018-12-25 | Schweitzer Engineering Laboratories, Inc. | Electric power system monitoring using distributed conductor-mounted devices |
| DE102017002573B4 (de) * | 2017-03-16 | 2019-07-04 | Infineon Technologies Ag | Überspannungsschutz |
| US10256806B2 (en) * | 2017-05-16 | 2019-04-09 | GM Global Technology Operations LLC | Power switch protection system and method |
| JP6549200B2 (ja) * | 2017-10-03 | 2019-07-24 | 三菱電機株式会社 | 電力変換回路 |
| CN110190799B (zh) | 2018-02-23 | 2022-09-20 | 松下知识产权经营株式会社 | 电动机控制装置和车辆驱动装置 |
| US11101673B2 (en) * | 2018-03-13 | 2021-08-24 | Cypress Semiconductor Corporation | Programmable gate driver control in USB power delivery |
| US10601415B2 (en) * | 2018-06-14 | 2020-03-24 | Infineon Technologies Austria Ag | Configurable integrated desaturation filter |
| DE102018123825B4 (de) * | 2018-09-26 | 2020-12-03 | Elmos Semiconductor Se | Treiber mit Unterscheidungsmöglichkeit zwischen Bootstrap-Kapazitätsnachladung und Kurzschlussfehlerfall |
| DE102018123816B4 (de) * | 2018-09-26 | 2020-07-09 | Elmos Semiconductor Aktiengesellschaft | Treiber mit Mitteln zur Unterscheidung zwischen unzureichender Bootstrap-Kapazitätsnachladung und einem Kurzschlussfehlerfall |
| CN109873397A (zh) * | 2019-01-31 | 2019-06-11 | 上海思立微电子科技有限公司 | 一种芯片静电防护的方法、装置及系统 |
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| TWI701895B (zh) * | 2020-04-22 | 2020-08-11 | 產晶積體電路股份有限公司 | 時間參數控制方法 |
| EP4169153A4 (en) * | 2020-06-19 | 2024-07-03 | Georgia Tech Research Corporation | Synchronous reverse blocking switch for soft-switching current source converters and soft-switching current source converters including the same |
| EP3945669A1 (en) | 2020-07-27 | 2022-02-02 | TRUMPF Huettinger Sp. Z o. o. | Hv switch unit, pulsing assembly and method of avoiding voltage imbalances in an hv switch |
| EP3945541A1 (en) | 2020-07-29 | 2022-02-02 | TRUMPF Huettinger Sp. Z o. o. | Pulsing assembly, power supply arrangement and method using the assembly |
| EP3952083A1 (en) | 2020-08-06 | 2022-02-09 | TRUMPF Huettinger Sp. Z o. o. | Hv switch unit |
| CN114079266B (zh) * | 2020-08-18 | 2024-07-19 | 美垦半导体技术有限公司 | 高压集成模块、智能功率模块及其控制方法、空调器 |
| DE102020211852A1 (de) | 2020-09-22 | 2022-03-24 | Volkswagen Aktiengesellschaft | Gate-Treiberbaustein und Schaltungskonfiguration |
| TWI764792B (zh) * | 2021-01-25 | 2022-05-11 | 立錡科技股份有限公司 | 切換式轉換器電路及其中具有適應性空滯時間之驅動電路 |
| TWI769769B (zh) | 2021-03-31 | 2022-07-01 | 鑽全實業股份有限公司 | 動力工具及其安全控制電路模組及安全控制方法 |
| JP7709394B2 (ja) * | 2021-05-06 | 2025-07-16 | 株式会社デンソー | 半導体素子のリーク電流検出回路 |
| DE102021112066A1 (de) | 2021-05-10 | 2022-11-10 | Bayerische Motoren Werke Aktiengesellschaft | Wandlervorrichtung und Verfahren zum Betreiben eines Wechselrichters sowie Kraftfahrzeug mit einer Wandlervorrichtung |
| US12184059B2 (en) * | 2021-06-18 | 2024-12-31 | Semiconductor Components Industries, Llc | Fault protection testing in a high-power switching system |
| US12095451B2 (en) * | 2021-10-08 | 2024-09-17 | Semiconductor Components Industries, Llc | Gate driver |
| CN117665513A (zh) * | 2022-08-25 | 2024-03-08 | 安徽威灵汽车部件有限公司 | 信号检测电路、检测方法、电机控制器、压缩机及车辆 |
| CN116318110A (zh) * | 2023-03-10 | 2023-06-23 | 北京鸿智电通科技有限公司 | 多层门极驱动电路结构、电源电池管理芯片和快充装置 |
| WO2024233295A1 (en) * | 2023-05-05 | 2024-11-14 | Texas Instruments Incorporated | Multi-synchronous rectifier (sr) drive switching control system |
| TWI842645B (zh) * | 2023-10-24 | 2024-05-11 | 能創半導體股份有限公司 | 訊號延遲設定電路、隔離式積體電路及電源轉換電路系統 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1176707B1 (en) * | 2000-07-17 | 2003-05-14 | STMicroelectronics S.r.l. | Voltage converter circuit with self oscillating half bridge configuration and with protection against hard switching |
-
2003
- 2003-10-29 US US10/696,711 patent/US6859087B2/en not_active Expired - Lifetime
- 2003-10-31 JP JP2003373517A patent/JP3949640B2/ja not_active Expired - Fee Related
- 2003-10-31 DE DE10351033A patent/DE10351033A1/de not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11519954B2 (en) | 2019-08-27 | 2022-12-06 | Analog Devices International Unlimited Company | Apparatus and method to achieve fast-fault detection on power semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040120090A1 (en) | 2004-06-24 |
| DE10351033A1 (de) | 2004-06-09 |
| US6859087B2 (en) | 2005-02-22 |
| JP2004201486A (ja) | 2004-07-15 |
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