JP3934731B2 - アクティブマトリクス型液晶表示装置の作製方法、アクティブマトリクス型液晶表示装置、電気光学装置 - Google Patents
アクティブマトリクス型液晶表示装置の作製方法、アクティブマトリクス型液晶表示装置、電気光学装置 Download PDFInfo
- Publication number
- JP3934731B2 JP3934731B2 JP9024597A JP9024597A JP3934731B2 JP 3934731 B2 JP3934731 B2 JP 3934731B2 JP 9024597 A JP9024597 A JP 9024597A JP 9024597 A JP9024597 A JP 9024597A JP 3934731 B2 JP3934731 B2 JP 3934731B2
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- Prior art keywords
- insulating layer
- liquid crystal
- electrodes
- display device
- active matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000004973 liquid crystal related substance Substances 0.000 title claims description 60
- 239000011159 matrix material Substances 0.000 title claims description 49
- 238000000034 method Methods 0.000 title claims description 40
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 74
- 239000010408 film Substances 0.000 description 71
- 239000011229 interlayer Substances 0.000 description 33
- 238000005498 polishing Methods 0.000 description 19
- 230000010287 polarization Effects 0.000 description 13
- 239000012535 impurity Substances 0.000 description 11
- 238000007517 polishing process Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001788 irregular Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000004815 dispersion polymer Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9024597A JP3934731B2 (ja) | 1997-03-24 | 1997-03-24 | アクティブマトリクス型液晶表示装置の作製方法、アクティブマトリクス型液晶表示装置、電気光学装置 |
| US09/046,198 US6163055A (en) | 1997-03-24 | 1998-03-23 | Semiconductor device and manufacturing method thereof |
| KR1019980010071A KR100505963B1 (ko) | 1997-03-24 | 1998-03-24 | 반도체장치및그의제작방법 |
| US09/730,417 US6617645B2 (en) | 1997-03-24 | 2000-12-04 | Semiconductor device and manufacturing method thereof |
| US10/656,170 US6812082B2 (en) | 1997-03-24 | 2003-09-08 | Semiconductor device and manufacturing method thereof |
| KR1020050013098A KR100536076B1 (ko) | 1997-03-24 | 2005-02-17 | 표시장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9024597A JP3934731B2 (ja) | 1997-03-24 | 1997-03-24 | アクティブマトリクス型液晶表示装置の作製方法、アクティブマトリクス型液晶表示装置、電気光学装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10270707A JPH10270707A (ja) | 1998-10-09 |
| JPH10270707A5 JPH10270707A5 (enExample) | 2005-02-24 |
| JP3934731B2 true JP3934731B2 (ja) | 2007-06-20 |
Family
ID=13993126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9024597A Expired - Lifetime JP3934731B2 (ja) | 1997-03-24 | 1997-03-24 | アクティブマトリクス型液晶表示装置の作製方法、アクティブマトリクス型液晶表示装置、電気光学装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3934731B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2500941A3 (en) * | 1999-06-02 | 2017-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5103742B2 (ja) * | 2006-01-23 | 2012-12-19 | 凸版印刷株式会社 | 薄膜トランジスタ装置及びその製造方法及び薄膜トランジスタアレイ及び薄膜トランジスタディスプレイ |
| JP2007206212A (ja) * | 2006-01-31 | 2007-08-16 | Canon Inc | 反射型液晶表示装置及びその製造方法 |
| US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
| JP5109681B2 (ja) * | 2008-01-25 | 2012-12-26 | セイコーエプソン株式会社 | 液晶装置の製造方法 |
| CN103762244A (zh) * | 2013-11-29 | 2014-04-30 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制造方法、薄膜晶体管阵列基板及液晶面板 |
| JP6323055B2 (ja) * | 2014-02-21 | 2018-05-16 | 凸版印刷株式会社 | 薄膜トランジスタアレイおよびその製造方法 |
-
1997
- 1997-03-24 JP JP9024597A patent/JP3934731B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10270707A (ja) | 1998-10-09 |
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