JP3904807B2 - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP3904807B2
JP3904807B2 JP2000166749A JP2000166749A JP3904807B2 JP 3904807 B2 JP3904807 B2 JP 3904807B2 JP 2000166749 A JP2000166749 A JP 2000166749A JP 2000166749 A JP2000166749 A JP 2000166749A JP 3904807 B2 JP3904807 B2 JP 3904807B2
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JP
Japan
Prior art keywords
transistor
region
gate electrodes
concentration
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000166749A
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English (en)
Japanese (ja)
Other versions
JP2001051622A (ja
JP2001051622A5 (enExample
Inventor
舜平 山崎
潤 小山
一宇 山本
利光 小沼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000166749A priority Critical patent/JP3904807B2/ja
Publication of JP2001051622A publication Critical patent/JP2001051622A/ja
Publication of JP2001051622A5 publication Critical patent/JP2001051622A5/ja
Application granted granted Critical
Publication of JP3904807B2 publication Critical patent/JP3904807B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2000166749A 1999-06-04 2000-06-02 表示装置 Expired - Fee Related JP3904807B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000166749A JP3904807B2 (ja) 1999-06-04 2000-06-02 表示装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP11-158787 1999-06-04
JP15878799 1999-06-04
JP2000166749A JP3904807B2 (ja) 1999-06-04 2000-06-02 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005186259A Division JP2006011454A (ja) 1999-06-04 2005-06-27 電気光学装置及び電子装置

Publications (3)

Publication Number Publication Date
JP2001051622A JP2001051622A (ja) 2001-02-23
JP2001051622A5 JP2001051622A5 (enExample) 2005-10-20
JP3904807B2 true JP3904807B2 (ja) 2007-04-11

Family

ID=26485794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000166749A Expired - Fee Related JP3904807B2 (ja) 1999-06-04 2000-06-02 表示装置

Country Status (1)

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JP (1) JP3904807B2 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100485928C (zh) * 2000-09-29 2009-05-06 三洋电机株式会社 半导体器件以及显示装置
KR100560777B1 (ko) * 2001-03-26 2006-03-13 삼성에스디아이 주식회사 유기 발광 소자 구동용 티에프티 화소부
JP4896318B2 (ja) * 2001-09-10 2012-03-14 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4149168B2 (ja) 2001-11-09 2008-09-10 株式会社半導体エネルギー研究所 発光装置
US6909240B2 (en) 2002-01-18 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP4490403B2 (ja) * 2002-01-18 2010-06-23 株式会社半導体エネルギー研究所 発光装置
JP3706107B2 (ja) * 2002-01-18 2005-10-12 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP3939666B2 (ja) * 2002-01-18 2007-07-04 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP2004126106A (ja) * 2002-10-01 2004-04-22 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
US7385223B2 (en) 2003-04-24 2008-06-10 Samsung Sdi Co., Ltd. Flat panel display with thin film transistor
US7579220B2 (en) 2005-05-20 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device manufacturing method
US7853217B2 (en) 2005-08-18 2010-12-14 Panasonic Corporation Wireless communication terminal apparatus and CQI selecting method
EP1764770A3 (en) * 2005-09-16 2012-03-14 Semiconductor Energy Laboratory Co., Ltd. Display device and driving method of display device
KR101277606B1 (ko) * 2006-03-22 2013-06-21 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
WO2008001727A1 (en) 2006-06-26 2008-01-03 Panasonic Corporation Radio communication device and cqi generation method
US7863612B2 (en) 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
JP5190709B2 (ja) * 2009-02-20 2013-04-24 カシオ計算機株式会社 表示パネル及びその製造方法
EP2284891B1 (en) * 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5531720B2 (ja) * 2010-03-30 2014-06-25 ソニー株式会社 表示装置、表示装置の製造方法、及び、電子機器
JP5443588B2 (ja) 2010-06-22 2014-03-19 パナソニック株式会社 発光表示装置及びその製造方法
TWI624936B (zh) * 2013-06-05 2018-05-21 半導體能源研究所股份有限公司 顯示裝置
JP5770236B2 (ja) * 2013-09-18 2015-08-26 株式会社ジャパンディスプレイ 表示装置
CN109427820B (zh) 2017-08-31 2021-02-23 京东方科技集团股份有限公司 一种显示装置用基板及其制备方法、显示面板
JP6715312B2 (ja) * 2018-12-04 2020-07-01 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 表示装置
WO2020217959A1 (ja) 2019-04-23 2020-10-29 京セラ株式会社 マイクロｌｅｄ素子基板および表示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5151632A (en) * 1991-03-22 1992-09-29 General Motors Corporation Flat panel emissive display with redundant circuit
JPH0595115A (ja) * 1991-10-01 1993-04-16 Nippon Telegr & Teleph Corp <Ntt> Ｍｏｓトランジスタの製造方法
JPH0945930A (ja) * 1995-07-28 1997-02-14 Sony Corp 薄膜トランジスタ及びその製造方法
JP3188167B2 (ja) * 1995-12-15 2001-07-16 三洋電機株式会社 薄膜トランジスタ
JP3593212B2 (ja) * 1996-04-27 2004-11-24 株式会社半導体エネルギー研究所 表示装置
KR100476125B1 (ko) * 1996-09-26 2005-08-12 세이코 엡슨 가부시키가이샤 표시장치
US6462722B1 (en) * 1997-02-17 2002-10-08 Seiko Epson Corporation Current-driven light-emitting display apparatus and method of producing the same
JP4397439B2 (ja) * 1997-09-30 2010-01-13 株式会社半導体エネルギー研究所 半導体装置
JP4397438B2 (ja) * 1997-09-29 2010-01-13 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
JP2001051622A (ja) 2001-02-23

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