JP3902369B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP3902369B2
JP3902369B2 JP37012599A JP37012599A JP3902369B2 JP 3902369 B2 JP3902369 B2 JP 3902369B2 JP 37012599 A JP37012599 A JP 37012599A JP 37012599 A JP37012599 A JP 37012599A JP 3902369 B2 JP3902369 B2 JP 3902369B2
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Japan
Prior art keywords
film
pattern
region
dram
insulating film
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Expired - Fee Related
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JP37012599A
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Japanese (ja)
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JP2001185701A (ja
JP2001185701A5 (https=
Inventor
悟 山田
勝也 早野
彰 今井
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Micron Memory Japan Ltd
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Elpida Memory Inc
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Priority to JP37012599A priority Critical patent/JP3902369B2/ja
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JP37012599A 1999-12-27 1999-12-27 半導体集積回路装置の製造方法 Expired - Fee Related JP3902369B2 (ja)

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JP37012599A JP3902369B2 (ja) 1999-12-27 1999-12-27 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37012599A JP3902369B2 (ja) 1999-12-27 1999-12-27 半導体集積回路装置の製造方法

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JP2001185701A JP2001185701A (ja) 2001-07-06
JP2001185701A5 JP2001185701A5 (https=) 2005-03-17
JP3902369B2 true JP3902369B2 (ja) 2007-04-04

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JP37012599A Expired - Fee Related JP3902369B2 (ja) 1999-12-27 1999-12-27 半導体集積回路装置の製造方法

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Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119937A (ja) * 2002-09-30 2004-04-15 Fujitsu Ltd 半導体記憶装置
JP4627977B2 (ja) 2003-10-14 2011-02-09 ルネサスエレクトロニクス株式会社 半導体装置
US7323746B2 (en) 2004-09-14 2008-01-29 Samsung Electronics Co., Ltd. Recess gate-type semiconductor device and method of manufacturing the same
KR100652406B1 (ko) 2005-04-01 2006-12-01 삼성전자주식회사 마스크 레이아웃 및 이를 이용한 콘택패드의 형성방법
JP5694625B2 (ja) 2006-04-13 2015-04-01 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置
KR100771891B1 (ko) 2006-11-10 2007-11-01 삼성전자주식회사 더블 패터닝 공정을 이용하는 반도체 소자의 미세 패턴형성 방법
KR100891329B1 (ko) * 2007-01-26 2009-03-31 삼성전자주식회사 반도체 소자 및 그 제조 방법
WO2009125805A1 (ja) 2008-04-09 2009-10-15 株式会社ニコン 表面検査方法および表面検査装置
JP5253460B2 (ja) * 2010-07-12 2013-07-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR102062676B1 (ko) 2012-12-06 2020-01-06 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법
CN110931485B (zh) * 2018-09-20 2024-06-07 长鑫存储技术有限公司 半导体存储器电容连接线结构及制备方法
JP2020178010A (ja) * 2019-04-17 2020-10-29 キオクシア株式会社 半導体記憶装置
US11315860B2 (en) * 2019-10-17 2022-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package and manufacturing process thereof
US10998319B1 (en) * 2020-02-25 2021-05-04 Nanya Technology Corporation Memory structure
CN113950193B (zh) * 2021-09-24 2024-09-10 上海富乐华半导体科技有限公司 Dbc覆铜陶瓷基板上圆形半腐蚀沉孔的设计方法
CN119153393B (zh) * 2023-06-07 2025-10-03 长鑫存储技术有限公司 半导体结构及其制作方法

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