JP3894260B2 - ポジ型フォトレジスト組成物 - Google Patents
ポジ型フォトレジスト組成物 Download PDFInfo
- Publication number
- JP3894260B2 JP3894260B2 JP16586299A JP16586299A JP3894260B2 JP 3894260 B2 JP3894260 B2 JP 3894260B2 JP 16586299 A JP16586299 A JP 16586299A JP 16586299 A JP16586299 A JP 16586299A JP 3894260 B2 JP3894260 B2 JP 3894260B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- acid
- compound
- general formula
- alkali
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- CECFXTLUSUSYDG-UHFFFAOYSA-N CCC(C)c(cc1)ccc1OC(C)=O Chemical compound CCC(C)c(cc1)ccc1OC(C)=O CECFXTLUSUSYDG-UHFFFAOYSA-N 0.000 description 2
- VSEBRKDIQRIRJK-UHFFFAOYSA-N CCC(C)c(cc1)ccc1OC(C)OCCN(CCC1)C1=O Chemical compound CCC(C)c(cc1)ccc1OC(C)OCCN(CCC1)C1=O VSEBRKDIQRIRJK-UHFFFAOYSA-N 0.000 description 2
- LFGRMSQYFMBGCC-UHFFFAOYSA-N CCC(C)c(cc1)ccc1OC(C)OCC[n]1nccc1C Chemical compound CCC(C)c(cc1)ccc1OC(C)OCC[n]1nccc1C LFGRMSQYFMBGCC-UHFFFAOYSA-N 0.000 description 2
Landscapes
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16586299A JP3894260B2 (ja) | 1999-06-11 | 1999-06-11 | ポジ型フォトレジスト組成物 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16586299A JP3894260B2 (ja) | 1999-06-11 | 1999-06-11 | ポジ型フォトレジスト組成物 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2000352822A JP2000352822A (ja) | 2000-12-19 |
JP2000352822A5 JP2000352822A5 (enrdf_load_stackoverflow) | 2005-07-07 |
JP3894260B2 true JP3894260B2 (ja) | 2007-03-14 |
Family
ID=15820410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16586299A Expired - Fee Related JP3894260B2 (ja) | 1999-06-11 | 1999-06-11 | ポジ型フォトレジスト組成物 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3894260B2 (enrdf_load_stackoverflow) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101036501B1 (ko) | 2002-11-22 | 2011-05-24 | 후지필름 가부시키가이샤 | 포지티브형 레지스트 조성물 및 그것을 사용한 패턴형성방법 |
JP4414721B2 (ja) * | 2002-11-22 | 2010-02-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US8043786B2 (en) * | 2003-03-05 | 2011-10-25 | Jsr Corporation | Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions |
JP2004307387A (ja) * | 2003-04-07 | 2004-11-04 | Tosoh F-Tech Inc | 2−(ビシクロ[2.2.1]ヘプト−2−イル)−1,1−ジフルオロエチルスルフィン酸塩または2−(ビシクロ[2.2.1]ヘプト−2−イル)−1,1−ジフルオロエチルスルホン酸塩およびそれらの製造方法 |
CN100354257C (zh) | 2003-07-18 | 2007-12-12 | 住友化学工业株式会社 | 磺酸盐和光刻胶组合物 |
US8182975B2 (en) | 2007-03-28 | 2012-05-22 | Fujifilm Corporation | Positive resist composition and pattern forming method using the same |
US7498116B2 (en) | 2007-03-30 | 2009-03-03 | Fujifilm Corporation | Resist composition and pattern formation method using the same |
JP5039493B2 (ja) | 2007-09-28 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
JP5039492B2 (ja) | 2007-09-28 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物およびこれを用いたパターン形成方法 |
JP5537920B2 (ja) | 2009-03-26 | 2014-07-02 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、これを用いたレジスト膜、及び、パターン形成方法 |
KR102230622B1 (ko) * | 2017-11-24 | 2021-03-22 | 주식회사 엘지화학 | 포토레지스트 조성물 및 이를 이용한 포토레지스트 필름 |
-
1999
- 1999-06-11 JP JP16586299A patent/JP3894260B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2000352822A (ja) | 2000-12-19 |
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