JP3878707B2 - 窒化物系半導体レーザ素子の製造方法 - Google Patents

窒化物系半導体レーザ素子の製造方法 Download PDF

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Publication number
JP3878707B2
JP3878707B2 JP3592797A JP3592797A JP3878707B2 JP 3878707 B2 JP3878707 B2 JP 3878707B2 JP 3592797 A JP3592797 A JP 3592797A JP 3592797 A JP3592797 A JP 3592797A JP 3878707 B2 JP3878707 B2 JP 3878707B2
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Japan
Prior art keywords
layer
semiconductor laser
cladding layer
laser device
upper cladding
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Expired - Fee Related
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JP3592797A
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English (en)
Japanese (ja)
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JPH09289358A5 (enExample
JPH09289358A (ja
Inventor
和彦 猪口
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Sharp Corp
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Sharp Corp
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Priority to JP3592797A priority Critical patent/JP3878707B2/ja
Publication of JPH09289358A publication Critical patent/JPH09289358A/ja
Publication of JPH09289358A5 publication Critical patent/JPH09289358A5/ja
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  • Led Devices (AREA)
JP3592797A 1996-02-21 1997-02-20 窒化物系半導体レーザ素子の製造方法 Expired - Fee Related JP3878707B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3592797A JP3878707B2 (ja) 1996-02-21 1997-02-20 窒化物系半導体レーザ素子の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP3366096 1996-02-21
JP8-33660 1996-02-21
JP3592797A JP3878707B2 (ja) 1996-02-21 1997-02-20 窒化物系半導体レーザ素子の製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2001044407A Division JP4118025B2 (ja) 1996-02-21 2001-02-21 窒化ガリウム系半導体レーザ素子
JP2001044408A Division JP2001257433A (ja) 1996-02-21 2001-02-21 窒化物系半導体レーザ装置

Publications (3)

Publication Number Publication Date
JPH09289358A JPH09289358A (ja) 1997-11-04
JPH09289358A5 JPH09289358A5 (enExample) 2005-02-24
JP3878707B2 true JP3878707B2 (ja) 2007-02-07

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JP3592797A Expired - Fee Related JP3878707B2 (ja) 1996-02-21 1997-02-20 窒化物系半導体レーザ素子の製造方法

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JP (1) JP3878707B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4639571B2 (ja) * 1998-02-17 2011-02-23 日亜化学工業株式会社 窒化物半導体レーザ素子およびその製造方法
DE69934504T2 (de) 1998-10-07 2007-10-04 Sharp K.K. Halbleiterlaser
JP3936109B2 (ja) 1999-04-26 2007-06-27 富士通株式会社 半導体発光装置及びその製造方法
JP3723434B2 (ja) * 1999-09-24 2005-12-07 三洋電機株式会社 半導体発光素子
JP5442229B2 (ja) * 2008-09-04 2014-03-12 ローム株式会社 窒化物半導体素子の製造方法

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JPH09289358A (ja) 1997-11-04

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