JP3858606B2 - 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ - Google Patents

干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ Download PDF

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JP3858606B2
JP3858606B2 JP2001037511A JP2001037511A JP3858606B2 JP 3858606 B2 JP3858606 B2 JP 3858606B2 JP 2001037511 A JP2001037511 A JP 2001037511A JP 2001037511 A JP2001037511 A JP 2001037511A JP 3858606 B2 JP3858606 B2 JP 3858606B2
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film
sacrificial layer
reflective film
interference filter
forming
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JP2002243937A (ja
JP2002243937A5 (enExample
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高司 武田
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Seiko Epson Corp
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Seiko Epson Corp
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JP2001037511A 2001-02-14 2001-02-14 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ Expired - Fee Related JP3858606B2 (ja)

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JP2001037511A JP3858606B2 (ja) 2001-02-14 2001-02-14 干渉フィルタの製造方法、干渉フィルタ、波長可変干渉フィルタの製造方法及び波長可変干渉フィルタ

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JP2002243937A5 JP2002243937A5 (enExample) 2005-01-27
JP3858606B2 true JP3858606B2 (ja) 2006-12-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110954981A (zh) * 2018-09-27 2020-04-03 精工爱普生株式会社 光学装置及电子设备

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7550794B2 (en) 2002-09-20 2009-06-23 Idc, Llc Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer
US7297471B1 (en) 2003-04-15 2007-11-20 Idc, Llc Method for manufacturing an array of interferometric modulators
TW557395B (en) * 2003-01-29 2003-10-11 Yen Sun Technology Corp Optical interference type reflection panel and the manufacturing method thereof
TW570896B (en) 2003-05-26 2004-01-11 Prime View Int Co Ltd A method for fabricating an interference display cell
US7221495B2 (en) 2003-06-24 2007-05-22 Idc Llc Thin film precursor stack for MEMS manufacturing
JP3812550B2 (ja) 2003-07-07 2006-08-23 セイコーエプソン株式会社 波長可変光フィルタ
JP2005045976A (ja) * 2003-07-25 2005-02-17 Matsushita Electric Works Ltd 静電アクチュエータ
JP3770326B2 (ja) 2003-10-01 2006-04-26 セイコーエプソン株式会社 分析装置
JP2005165067A (ja) 2003-12-03 2005-06-23 Seiko Epson Corp 波長可変フィルタおよび波長可変フィルタの製造方法
JP4634057B2 (ja) * 2004-03-17 2011-02-16 アンリツ株式会社 光キャビティ
JP4296974B2 (ja) * 2004-03-24 2009-07-15 株式会社村田製作所 ファブリペロー型波長可変フィルタおよび多チャンネルファブリペロー型波長可変フィルタ
US7087134B2 (en) * 2004-03-31 2006-08-08 Hewlett-Packard Development Company, L.P. System and method for direct-bonding of substrates
JP4210245B2 (ja) 2004-07-09 2009-01-14 セイコーエプソン株式会社 波長可変フィルタ及び検出装置
KR101313117B1 (ko) 2004-07-29 2013-09-30 퀄컴 엠이엠에스 테크놀로지스, 인크. 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법
US7492502B2 (en) 2004-09-27 2009-02-17 Idc, Llc Method of fabricating a free-standing microstructure
US7429334B2 (en) 2004-09-27 2008-09-30 Idc, Llc Methods of fabricating interferometric modulators by selectively removing a material
US20060066932A1 (en) * 2004-09-27 2006-03-30 Clarence Chui Method of selective etching using etch stop layer
CN100410723C (zh) * 2005-01-28 2008-08-13 精工爱普生株式会社 可变波长滤光器以及可变波长滤光器的制造方法
TW200628877A (en) 2005-02-04 2006-08-16 Prime View Int Co Ltd Method of manufacturing optical interference type color display
EP2495212A3 (en) 2005-07-22 2012-10-31 QUALCOMM MEMS Technologies, Inc. Mems devices having support structures and methods of fabricating the same
CA2616268A1 (en) * 2005-07-22 2007-02-01 Qualcomm Incorporated Mems devices having support structures and methods of fabricating the same
WO2007013939A1 (en) 2005-07-22 2007-02-01 Qualcomm Incorporated Support structure for mems device and methods therefor
US7795061B2 (en) 2005-12-29 2010-09-14 Qualcomm Mems Technologies, Inc. Method of creating MEMS device cavities by a non-etching process
US7382515B2 (en) 2006-01-18 2008-06-03 Qualcomm Mems Technologies, Inc. Silicon-rich silicon nitrides as etch stops in MEMS manufacture
US7547568B2 (en) 2006-02-22 2009-06-16 Qualcomm Mems Technologies, Inc. Electrical conditioning of MEMS device and insulating layer thereof
US7450295B2 (en) 2006-03-02 2008-11-11 Qualcomm Mems Technologies, Inc. Methods for producing MEMS with protective coatings using multi-component sacrificial layers
US7623287B2 (en) 2006-04-19 2009-11-24 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7527996B2 (en) 2006-04-19 2009-05-05 Qualcomm Mems Technologies, Inc. Non-planar surface structures and process for microelectromechanical systems
US7321457B2 (en) 2006-06-01 2008-01-22 Qualcomm Incorporated Process and structure for fabrication of MEMS device having isolated edge posts
US7763546B2 (en) 2006-08-02 2010-07-27 Qualcomm Mems Technologies, Inc. Methods for reducing surface charges during the manufacture of microelectromechanical systems devices
US7733552B2 (en) 2007-03-21 2010-06-08 Qualcomm Mems Technologies, Inc MEMS cavity-coating layers and methods
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US7569488B2 (en) 2007-06-22 2009-08-04 Qualcomm Mems Technologies, Inc. Methods of making a MEMS device by monitoring a process parameter
US7864403B2 (en) 2009-03-27 2011-01-04 Qualcomm Mems Technologies, Inc. Post-release adjustment of interferometric modulator reflectivity
US8547626B2 (en) 2010-03-25 2013-10-01 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of shaping the same
JP5625614B2 (ja) 2010-08-20 2014-11-19 セイコーエプソン株式会社 光フィルター、光フィルターモジュール、分光測定器および光機器
JP5577983B2 (ja) * 2010-09-21 2014-08-27 株式会社デンソー ファブリペロー干渉計の製造方法
US8963159B2 (en) 2011-04-04 2015-02-24 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US9134527B2 (en) 2011-04-04 2015-09-15 Qualcomm Mems Technologies, Inc. Pixel via and methods of forming the same
US8659816B2 (en) 2011-04-25 2014-02-25 Qualcomm Mems Technologies, Inc. Mechanical layer and methods of making the same
JP5906640B2 (ja) * 2011-09-29 2016-04-20 セイコーエプソン株式会社 波長可変干渉フィルター、光学フィルターデバイス、光学モジュール、及び電子機器
JP6035768B2 (ja) 2012-02-16 2016-11-30 セイコーエプソン株式会社 干渉フィルター、光学モジュール、および電子機器
FI125612B (en) 2012-05-08 2015-12-15 Teknologian Tutkimuskeskus Vtt Oy Fabry-Perot Interferometer
US9638913B2 (en) * 2013-11-26 2017-05-02 Inphenix, Inc. Wavelength tunable MEMS-Fabry Perot filter
JP7238385B2 (ja) 2018-12-20 2023-03-14 セイコーエプソン株式会社 分光フィルターモジュール、分光カメラおよび電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110954981A (zh) * 2018-09-27 2020-04-03 精工爱普生株式会社 光学装置及电子设备

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