JP3831878B2 - ウェハ処理装置 - Google Patents

ウェハ処理装置 Download PDF

Info

Publication number
JP3831878B2
JP3831878B2 JP03808097A JP3808097A JP3831878B2 JP 3831878 B2 JP3831878 B2 JP 3831878B2 JP 03808097 A JP03808097 A JP 03808097A JP 3808097 A JP3808097 A JP 3808097A JP 3831878 B2 JP3831878 B2 JP 3831878B2
Authority
JP
Japan
Prior art keywords
wafer
layer
substrate
porous
rotating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03808097A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242103A5 (enExample
JPH10242103A (ja
Inventor
二三男 上原
賢一 原田
清文 坂口
一隆 柳田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MARUWA CORPORATION
Canon Inc
Original Assignee
MARUWA CORPORATION
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MARUWA CORPORATION, Canon Inc filed Critical MARUWA CORPORATION
Priority to JP03808097A priority Critical patent/JP3831878B2/ja
Priority to SG1998000290A priority patent/SG63810A1/en
Priority to TW090218651U priority patent/TW504041U/zh
Priority to US09/025,409 priority patent/US6199563B1/en
Priority to AU55370/98A priority patent/AU742258B2/en
Priority to CA002229975A priority patent/CA2229975C/en
Priority to EP98102897A priority patent/EP0860860A3/en
Priority to KR1019980005354A priority patent/KR100306054B1/ko
Priority to CN98105320A priority patent/CN1111900C/zh
Publication of JPH10242103A publication Critical patent/JPH10242103A/ja
Priority to US09/664,715 priority patent/US6767840B1/en
Priority to KR1020000065431A priority patent/KR100347824B1/ko
Publication of JPH10242103A5 publication Critical patent/JPH10242103A5/ja
Application granted granted Critical
Publication of JP3831878B2 publication Critical patent/JP3831878B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP03808097A 1997-02-21 1997-02-21 ウェハ処理装置 Expired - Fee Related JP3831878B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP03808097A JP3831878B2 (ja) 1997-02-21 1997-02-21 ウェハ処理装置
SG1998000290A SG63810A1 (en) 1997-02-21 1998-02-10 Wafer processing apparatus wafer processing method and semiconductor substrate fabrication method
TW090218651U TW504041U (en) 1997-02-21 1998-02-10 Wafer processing apparatus
AU55370/98A AU742258B2 (en) 1997-02-21 1998-02-18 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
CA002229975A CA2229975C (en) 1997-02-21 1998-02-18 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
US09/025,409 US6199563B1 (en) 1997-02-21 1998-02-18 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
EP98102897A EP0860860A3 (en) 1997-02-21 1998-02-19 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
KR1019980005354A KR100306054B1 (ko) 1997-02-21 1998-02-20 웨이퍼처리장치,웨이퍼처리방법및반도체기체의제조방법
CN98105320A CN1111900C (zh) 1997-02-21 1998-02-20 晶片处理装置、晶片处理方法、和半导体衬底制备方法
US09/664,715 US6767840B1 (en) 1997-02-21 2000-09-19 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
KR1020000065431A KR100347824B1 (ko) 1997-02-21 2000-11-04 웨이퍼 처리장치, 웨이퍼 처리방법 및 반도체기체의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03808097A JP3831878B2 (ja) 1997-02-21 1997-02-21 ウェハ処理装置

Publications (3)

Publication Number Publication Date
JPH10242103A JPH10242103A (ja) 1998-09-11
JPH10242103A5 JPH10242103A5 (enExample) 2005-01-20
JP3831878B2 true JP3831878B2 (ja) 2006-10-11

Family

ID=12515515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03808097A Expired - Fee Related JP3831878B2 (ja) 1997-02-21 1997-02-21 ウェハ処理装置

Country Status (1)

Country Link
JP (1) JP3831878B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4526374B2 (ja) * 2004-03-30 2010-08-18 大日本スクリーン製造株式会社 基板処理装置
JP2006181555A (ja) * 2004-12-28 2006-07-13 Mitsubishi Materials Polycrystalline Silicon Corp 多結晶シリコンの洗浄方法と洗浄装置
JP4451430B2 (ja) 2006-11-28 2010-04-14 昭和電工株式会社 磁気記録媒体用基板の洗浄装置および洗浄方法
JP5696491B2 (ja) * 2011-01-20 2015-04-08 株式会社Sumco ウェーハ洗浄装置及び洗浄方法
CN110369390A (zh) * 2019-07-05 2019-10-25 上海提牛机电设备有限公司 一种陶瓷盘360度旋装置
CN117293066B (zh) * 2023-11-24 2024-01-30 西安寰微电子科技有限公司 一种半导体硅片的清洗装置

Also Published As

Publication number Publication date
JPH10242103A (ja) 1998-09-11

Similar Documents

Publication Publication Date Title
KR100306054B1 (ko) 웨이퍼처리장치,웨이퍼처리방법및반도체기체의제조방법
US6337030B1 (en) Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method
JP3218564B2 (ja) 多孔質領域の除去方法及び半導体基体の製造方法
US6767840B1 (en) Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
US6342433B1 (en) Composite member its separation method and preparation method of semiconductor substrate by utilization thereof
JP3847935B2 (ja) 多孔質領域の除去方法及び半導体基体の製造方法
KR100382325B1 (ko) 웨이퍼처리장치및그방법,웨이퍼반송장치,그리고반도체제조장치
JPH11243076A (ja) 陽極化成方法及び陽極化成装置並びに半導体基板の製造方法
JP3831878B2 (ja) ウェハ処理装置
JP3031904B2 (ja) 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法
JP3831877B2 (ja) 半導体基体の製造方法
JP2000150837A (ja) 半導体基体の作製方法
JP4272796B2 (ja) 基板の処理方法
JP2000133558A (ja) 半導体基体の作製方法およびそれにより作製された基体
JP2005347301A (ja) 基板の作製方法
JP2004247609A (ja) 基板の製造方法
JP2004228150A (ja) エッチング方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060403

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060518

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060609

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060706

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100728

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100728

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110728

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120728

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120728

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130728

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees