JP3804907B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP3804907B2
JP3804907B2 JP37567199A JP37567199A JP3804907B2 JP 3804907 B2 JP3804907 B2 JP 3804907B2 JP 37567199 A JP37567199 A JP 37567199A JP 37567199 A JP37567199 A JP 37567199A JP 3804907 B2 JP3804907 B2 JP 3804907B2
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JP
Japan
Prior art keywords
ferroelectric
memory cell
ferroelectric memory
memory element
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP37567199A
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English (en)
Japanese (ja)
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JP2001189082A (ja
JP2001189082A5 (https=
Inventor
竹島　　徹
幸一 野呂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP37567199A priority Critical patent/JP3804907B2/ja
Priority to US09/578,913 priority patent/US6288930B1/en
Priority to KR1020000028958A priority patent/KR100551932B1/ko
Publication of JP2001189082A publication Critical patent/JP2001189082A/ja
Publication of JP2001189082A5 publication Critical patent/JP2001189082A5/ja
Application granted granted Critical
Publication of JP3804907B2 publication Critical patent/JP3804907B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
JP37567199A 1999-12-28 1999-12-28 半導体記憶装置 Expired - Fee Related JP3804907B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP37567199A JP3804907B2 (ja) 1999-12-28 1999-12-28 半導体記憶装置
US09/578,913 US6288930B1 (en) 1999-12-28 2000-05-26 Semiconductor memory device
KR1020000028958A KR100551932B1 (ko) 1999-12-28 2000-05-29 불휘발성 강유전체 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP37567199A JP3804907B2 (ja) 1999-12-28 1999-12-28 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2001189082A JP2001189082A (ja) 2001-07-10
JP2001189082A5 JP2001189082A5 (https=) 2004-12-09
JP3804907B2 true JP3804907B2 (ja) 2006-08-02

Family

ID=18505874

Family Applications (1)

Application Number Title Priority Date Filing Date
JP37567199A Expired - Fee Related JP3804907B2 (ja) 1999-12-28 1999-12-28 半導体記憶装置

Country Status (3)

Country Link
US (1) US6288930B1 (https=)
JP (1) JP3804907B2 (https=)
KR (1) KR100551932B1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6542434B1 (en) * 2001-05-31 2003-04-01 Lsi Logic Corporation Programmable self time circuitry for memories
US6646903B2 (en) * 2001-12-03 2003-11-11 Intel Corporation Ferroelectric memory input/output apparatus
KR100506448B1 (ko) * 2002-12-27 2005-08-08 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 이용한 인터리브 제어 장치
KR100492781B1 (ko) * 2003-05-23 2005-06-07 주식회사 하이닉스반도체 멀티비트 제어 기능을 갖는 불휘발성 강유전체 메모리 장치
KR100583090B1 (ko) 2003-05-30 2006-05-23 주식회사 하이닉스반도체 강유전체 레지스터의 캐패시터 제조방법
JP3760470B2 (ja) 2004-01-06 2006-03-29 セイコーエプソン株式会社 記憶回路、半導体装置、及び電子機器
US7093547B2 (en) * 2004-02-05 2006-08-22 Cnh Canada, Ltd. Opposed inductor improvements
US7088605B2 (en) * 2004-07-02 2006-08-08 Macronix International Co., Ltd. FeRAM memory design using ROM array architecture
JP2008108355A (ja) * 2006-10-25 2008-05-08 Toshiba Corp 強誘電体半導体記憶装置及び強誘電体半導体記憶装置の読み出し方法
JP2010277615A (ja) 2009-05-26 2010-12-09 Panasonic Corp 半導体記憶装置、および半導体集積回路
EP2700667B1 (en) 2011-04-20 2017-08-09 Nippon Shokubai Co., Ltd. Process and apparatus for producing water-absorbable resin of polyacrylic acid (salt) type
US9824738B2 (en) 2016-03-11 2017-11-21 Toshiba Memory Corporation Semiconductor storage device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930002470B1 (ko) * 1989-03-28 1993-04-02 가부시키가이샤 도시바 전기적인 독출/기록동작이 가능한 불휘발성 반도체기억장치 및 그 정보독출방법
JPH05166369A (ja) 1991-12-18 1993-07-02 Kawasaki Steel Corp 半導体メモリ装置
JPH07254649A (ja) 1994-03-15 1995-10-03 Toshiba Corp ダイナミック型半導体記憶装置
JP2643892B2 (ja) * 1995-01-05 1997-08-20 日本電気株式会社 強誘電体メモリ
JPH1012831A (ja) * 1996-06-21 1998-01-16 Texas Instr Japan Ltd 強誘電体メモリ装置及びその動作方法
JPH1070248A (ja) 1996-08-26 1998-03-10 Hitachi Ltd 強誘電体メモリと信号処理システム
KR100268444B1 (ko) * 1997-08-30 2000-10-16 윤종용 강유전체 랜덤 액세스 메모리 장치

Also Published As

Publication number Publication date
KR100551932B1 (ko) 2006-02-16
JP2001189082A (ja) 2001-07-10
KR20010066806A (ko) 2001-07-11
US6288930B1 (en) 2001-09-11

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