JP3796815B2

JP3796815B2 - Inner layer substrate and design device thereof

Info

Publication number: JP3796815B2
Application number: JP13142996A
Authority: JP
Inventors: 敏晃竹中
Original assignee: Ibiden Co Ltd
Current assignee: Ibiden Co Ltd
Priority date: 1996-04-26
Filing date: 1996-04-26
Publication date: 2006-07-12
Anticipated expiration: 2016-04-26
Also published as: JPH09293966A

Description

【０００１】
【技術分野】
本発明は，多層プリント配線板に用いる内層基板，及びそれにダムを配置するための設計装置に関する。
【０００２】
【従来技術】
多層プリント配線板は，積層した複数の基板を樹脂接着剤により互い固定し，その内部にも導体パタ─ンを形成したものである。
そして，３枚以上の基板を積層する場合には，上下の基板の間に１枚以上の内層基板が配置される。該内層基板には，導体パタ─ンが形成されている。
即ち，図１９に示すごとく，内層基板９は，それぞれ導体パタ─ン９１０を形成した２つの回路形成部９１を有している。そして，回路形成部９１と内層基板の基板周縁９２との間には，外周部９３が形成され，該外周部９３には，多数のダム９５が設けてある。また，両回路形成部９１の間には，製品間隙９５があり，この部分にもダム９５が設けてある。
【０００３】
ダム９５は厚み約３５μｍである。上記ダム９５は，上記のごとく，内層基板９を樹脂接着剤を介してその上下の基板と接着するとき，上記樹脂接着剤が両者の間から流出してしまったり，また両者のあいだにエアボイドが発生することを防止するために設けたものである（特開平６─１７７５３８号公報）。
なお，上記のごとく積層，接着した後は，積層板を，上記内層基板の切断線９１１に沿って切断し，個片基板とする。切断線９１１は，回路形成部９１の外周に位置している。
【０００４】
【解決しようとする課題】
しかしながら，上記従来の内層基板９は，上記ダム９５が同じ大きさであるため，ダム９５の間の間隙が比較的単純であり，樹脂接着剤が流出し易く，上記樹脂接着剤の流出，エアボイドを生ずるおそれがあった。
また，近年は，高機能配線に伴って，図２０に示すごとく，上記導体パタ─ン９１０を設ける回路形成部９１の大きさが大きくなり，回路形成部９１の間の製品間隙９６が小さくなっている。そのため，図２０に示すごとく，この製品間隙９６に，外周部９３に配置するダム９５と同じ大きさのダムを配置することができなくなっている。
【０００５】
本発明はかかる従来の問題点に鑑み，樹脂接着剤の流出，エアボイドの発生がない内層基板，及び該内層基板にダムを配置するための設計装置を提供しようとするものである。
【０００６】
【課題の解決手段】
請求項１の発明は，多層プリント配線板に用いる内層基板において，
該内層基板は，複数個の回路形成部を有していると共に，上記回路形成部と基板周縁との間の外周部には樹脂接着剤の流出を防止するためのダムを点在形成してなり，
また，上記ダムは，その形状が大きい大ダムとその形状が小さい小ダムとをそれぞれ複数個，混在して設けてあり，
一方，上記複数の回路形成部の間の製品間隙には，上記外周部に設けた上記大ダムよりは小さく上記小ダム以上の大きさを有する間隙ダムが形成されていることを特徴とする内層基板にある。
【０００７】
本発明において最も注目すべきことは，内層基板における上記外周部に上記大ダムと小ダムとを混在形成したこと，及び上記製品間隙には上記大ダムよりは小さく，小ダム以上の大きさを有する間隙ダムを設けたことである。
上記の大ダムの大きさは直径５．０〜１０．０ｍｍ，小ダムの大きさは直径２．０〜４．０ｍｍとすることが好ましい。これらの大きさよりも小さい場合には，外周部からの樹脂接着剤の流出，エアボイドの発生を完全に防止し難い。一方，これらの大きさよりも大きい場合には，外周部への大ダムと小ダムとの配置が困難となるおそれがある。
また，上記大ダム，小ダム，間隙ダムは，例えば内層基板の表裏両面に配設する。
【０００８】
次に，本発明の作用効果につき説明する。
本発明の内層基板においては，まず外周部には大ダムと小ダムとを混在配置しているため，これらの間の通路が複雑に曲折している。そのため，基板間に存在する空気は，これらの通路から容易に放出される。一方，樹脂接着剤の流出は生じない。
【０００９】
それ故，樹脂接着剤の流出及びエアボイドの発生を防止できる。また，製品間隙の間には上記大きさの間隙ダムを設けているので，製品間隙が狭い場合でもその広さに応じて任意の大きさの間隙ダムを配置でき，樹脂接着剤の上記流出及びエアボイドの発生を防止することができる。
【００１０】
次に，請求項２の発明のように，上記間隙ダムは上記小ダムと同じ大きさを有し，かつ複数列配置することが好ましい。この場合には，間隙ダムは小ダムと同じのため，両者の設計が容易となる。
また，請求項３の発明のように，上記外周部における大ダムは，２列以上配置され，大ダムの間に小ダムが配置されていることが好ましい（図５〜図７）。この場合には，これらの間に形成される通路が複雑となり，樹脂接着剤の流出，エアボイドの発生を一層防止できる。
【００１１】
次に，請求項４の発明のように，上記大ダムの配列の中心線の間には，小ダムが介設されていることが好ましい（図７）。この場合にも，上記と同様に，樹脂接着剤の流出，エアボイドの発生を一層防止できる。
【００１２】
次に，請求項５の発明のように，多層プリント配線板用の内層基板における，回路形成部と基板周縁との間の外周部に，樹脂接着剤の流出を防止するための大ダムと小ダムとを，多数混在配置するための内層基板の設計装置であって，
内層基板の上記外周部に配置すべき大ダム，小ダムの情報を読み込むダム情報読み込み手段と，
上記外周部の大きさを認識する外周部認識手段と，
上記外周部認識手段により認識された上記外周部に，上記ダム情報読み込み手段により得られた大ダムを複数個配置する大ダム配置手段と，
上記大ダムを配置した後の上記外周部における残余部分の大きさを認識する残余認識手段と，
上記残余認識手段により認識された上記残余部分に，上記ダム情報読み込み手段により得られた小ダムを複数個配置する小ダム配置手段とよりなることを特徴とする内層基板の設計装置がある。
【００１３】
上記設計装置の作用につき説明する。
上記設計装置においては，まず上記ダム情報読み込み手段により，大ダムと小ダムの情報を読み込む。一方，内層基板の外周部の大きさを外周部認識手段により認識する。そして，上記により認識された外周部に対して，上記ダム情報読み込み手段から得られた大ダムを複数個配置する。
そして，上記外周部への大ダムの配置は，例えば，外周部に大ダムが配置できなくなるまで，つまり，大ダムを配置するスペ−スがなくなるまで行なう。
【００１４】
次に，大ダムの配置が終わった後に，外周部において大ダムが配置されていない残余部分を残余認識手段により認識する。
そして，上記残余部分に対して，上記小ダム配置手段により，小ダムを配置する。
これらの配置は，例えばＣＡＤ（ＣｏｍｐｕｔｏｒＡｉｄｅｄＤｅｓｉｇｎ）装置により行なう。
【００１５】
上記設計装置により，上記外周部に対して容易に，大ダムと小ダムを配置でき，前記のごとき優れた内層基板を得ることができる。また，大ダムと小ダムを混在配置するので，小ダムのみを配置する場合に比べて，ＣＡＤのデ−タ量を少なくすることができる。
【００１６】
次に，請求項６の発明のように，上記内層基板が複数個の回路形成部を有していると共に各回路形成部の間には製品間隙を有している場合には，該製品間隙の大きさを認識する製品間隙認識手段と，上記製品間隙に，上記大ダムよりは小さく，上記小ダム以上の大きさを有する間隙ダムを配置する間隙ダム配置手段を有することが好ましい。
これにより，複数個の回路形成部を有する内層基板に対しても，その製品間隙に，容易に間隙ダムを配置することができ，上記のごとき優れた内層基板を得ることができる。
【００１７】
次に，請求項７の発明のように，大ダム配置手段，小ダム配置手段及び間隙ダム配置手段は，それぞれ上記大ダム，小ダム，間隙ダムが配置できなくなるまで配置を繰り返す配置繰り返し手段を有することが好ましい。
これにより，外周部及び製品間隙に対して，大ダム，小ダム，間隙ダムを可能な限り，配置することができる。
【００１８】
次に，請求項８の発明のように，上記外周部認識手段は，内層基板のサイズを読み込む内層基板サイズ読み込み手段と，回路形成部のサイズを読み込む回路形成部サイズ読み込み手段と，内層基板に回路形成部を配置するための配置情報を読み込む回路形成部配置情報読み込み手段とを有することが好ましい。
これにより，内層基板，それに設ける回路形成部の各サイズ，及び内層基板に配置される回路形成部の位置の情報が得られ，上記外周部及び製品間隙の大きさを容易に認識することができる。
【００１９】
次に，請求項９の発明のように，複数個配置された大ダムの中心を通る縦中心線とこれに直交し大ダムの中心を通る横中心線によって形成されるメッシュの間を，それぞれ２以上に縦方向及び横方向に分割する分割線上に対して，小ダムの中心を配置するメッシュ分割配置手段を有することが好ましい。
これにより，上記大ダムの中心を通る縦，横の中心線によって形成されるメッシュの間に，更に小ダムを配置することができ，小ダムの配置が容易となる。
【００２０】
【発明の実施の形態】
実施形態例１
本発明の実施形態例にかかる内層基板につき，図１〜図４を用いて説明する。
本例の内層基板１は，図１に示すごとく，多層プリント配線板に用いる内層基板１において，該内層基板１は，複数個の回路形成部１１を有していると共に，上記回路形成部１１と基板周縁１２との間の外周部１３には樹脂接着剤の流出を防止するためのダムを点在形成してなる。
【００２１】
また，上記ダムは，その形状が大きい大ダム２１とその形状が小さい小ダム２２とをそれぞれ複数個，混在して設けてあり，一方，上記複数の回路形成部１１の間の製品間隙２４には，上記外周部１３に設けた上記大ダム２１よりは小さく上記小ダム２２以上の大きさを有する間隙ダム２５が２列形成されている。
【００２２】
そして，上記大ダム２１，小ダム２２及び間隙ダム２５は真円であり，これらは，図２，図３に示すごとく，内層基板１の表裏両面に設けてある。また，大ダム２１は縦方向に２列配置され，大ダム２１の中心を通る横中心線における大ダム２１の右側又は左側に小ダム２２が配置されている。
本例において，上記各ダムの直径は，大ダム２１は６．０ｍｍ，小ダム２２は３．０ｍｍ，間隙ダム２５は３．０ｍｍであり，これらの厚みは３５μｍである。
【００２３】
また，図４に示すごとく，上記回路形成部１１の中には導体パタ─ン１１５が形成されている。回路形成部１１の外周には，積層後において切断する切断線１１１が形成されている。
また，これら各ダムは，例えば，内層基板１の回路形成部１１に導体パタ─ン１１５を形成する際に，同時に形成する。即ち，銅張積層板に用いて上記導体パタ─ン１１５を形成する際に，エッチング等により大ダム２１，小ダム２２，間隙ダム２５を形成する。また，これら各ダムの配置は，後述のごとく，ＣＡＤを用いた設計装置を用いて行なう。
【００２４】
次に，本例の作用効果につき説明する。
本例の内層基板１においては，外周部１３に，大ダム２１と小ダム２２とを混在させているため，これらの間の通路が複雑に曲折して形成される。そのため，樹脂接着剤の流出，エアボイドの発生を防止できる。
また，製品間隙２４には，上記大きさの間隙ダム２５を設けてあるので，製品間隙２４の間隔が狭くなっても，その広さに応じて，任意の大きさの間隙ダムを配置でき，樹脂接着剤の流出，エアボイドの発生を防止できる。
【００２５】
実施形態例２
本例は，図５に対するごとく，回路形成部１１と基板周縁１２との間の外周部１３に，２列の大ダム２１を配置すると共に，４つの大ダムによって囲まれる部分の中心位置に小ダム２２を配置した例である。
そして，上記小ダム２２は，大ダム２１の中心を通る各縦中心線３１と各横中心線３２の間を，縦方向及び横方向にそれぞれ２分割した分割線３５，３６のメッシュ上に形成されている。
【００２６】
また，回路形成部１１が大きく形成されたことにより，間隔が小さくなった製品間隙２４には，１列の間隙ダムが形成されている。
その他は実施形態例１と同様である。本例においても実施形態例１と同様の効果を得ることができる。
【００２７】
実施形態例３
本例は，図６に示すごとく，実施形態例２において，縦方向の外周部１３が狭くなった場合の例を示している。
本例においては，縦方向の外周部１３には１列の大ダム２１が形成されている。小ダム２２は，大ダム２１の各横中心線３２の間を２分割した分割線３６と，上下の外周部１３における大ダム２１の各縦中心線３１の間を２分割した分割線３５（仮想線）とにより形成されるメッシュ上に設けられている。
その他は実施形態例２と同様である。
本例においても，実施形態例２と同様の効果を得ることができる。
【００２８】
実施形態例４
本例は，図７に示すごとく，外周部１３において，大ダム２１の縦及び横の各中心線３１，３２の間に小ダム２２を配置した例を示す。本例においては，上記各中心線３１，３２の間の間隔が，実施形態例３の場合よりも大きく取ってあり，各大ダム２１の間に市松模様状に小ダム２２が配置されている。
更に，外周部１３においては，回路形成部１１に面する部分に小ダム２１が配置されている。
その他は，実施形態例２と同様である。
本例においても実施形態例２と同様の効果を得ることができる。
【００２９】
実施形態例５
本例は，図８，図９に示すごとく，内層基板の設計装置及びそのフロ─チャトを示す。
本例の設計装置は，図８及び図１，図５に示すごとく，多層プリント配線板用の内層基板１における，回路形成部１１と基板周縁１２との間の外周部１３に，樹脂接着剤の流出を防止するための大ダム２１と小ダム２２とを，多数混在配置するための内層基板１の設計装置である。
【００３０】
該設計装置は，内層基板１の上記外周部１３に配置すべき大ダム２１，小ダム２２の情報を読み込むダム情報読み込み手段４１と，
上記外周部１３の大きさを認識する外周部認識手段４２と，
上記外周部認識手段４２により認識された上記外周部１３に，上記ダム情報読み込み手段４１により得られた大ダム２１を複数個配置する大ダム配置手段４３１と，
上記大ダム２１を配置した後の上記外周部１３における残余部分の大きさを認識する残余認識手段４４と，
上記残余認識手段４４により認識された上記残余部分に，上記ダム情報読み込み手段４１により得られた小ダム２２を複数個配置する小ダム配置手段４３２とを有する。
【００３１】
また，上記製品間隙２４の大きさを認識する製品間隙認識手段４６と，上記製品間隙２４に，上記大ダム２１よりは小さく，上記小ダム２２以上の大きさを有する間隙ダム２５を配置する間隙ダム配置手段４３３を有する。
【００３２】
また，上記大ダム配置手段４３１，小ダム配置手段４３２及び間隙ダム配置手段４３３は，それぞれ上記大ダム２１，小ダム２２，間隙ダム２４が配置できなくなるまで配置を繰り返す配置繰り返し手段（図示略）を有する。
【００３３】
また，上記外周部認識手段４２は，内層基板１のサイズを読み込む内層基板サイズ読み込み手段４２１と，回路形成部１１のサイズを読み込む回路形成部サイズ読み込み手段４２２と，内層基板１に回路形成部を配置するための配置情報を読み込む回路形成部配置情報読み込み手段４２３とを有する。
【００３４】
更に，複数個配置された大ダム２１の中心を通る縦中心線３１とこれに直交し大ダム２１の中心を通る横中心線３１によって形成されるメッシュの間を，それぞれ２以上に縦方向及び横方向に分割する分割線３５，３６上に対して，小ダム２２の中心を配置するメッシュ分割配置手段４５を有する。
【００３５】
次に，上記設計装置を用いて，内層基板に大ダム，小ダム，間隙ダムを配置する方法につき，前記図５（実施形態例２）に示した内層基板１を例にとって説明する。
まず，Ｓ（ステップ）１０１においては，内層基板サイズ読み込み手段４２１により内層基板１のサイズを読み込む。次いでＳ１０２において回路形成部サイズ読み込み手段４２２により回路形成部１１のサイズを読み込み，更にＳ１０３において，回路形成部配置情報読み込み手段４２３により，回路形成部を内層基板のどの位置に配置するかの情報を読み込む。
【００３６】
そして，Ｓ１０４において，上記内層基板１，回路形成部１１のサイズ，及び内層基板１中への回路形成部１１の配置位置から，内層基板１の基板周縁１２と回路形成部１１との間に形成される外周部１３を認識する。
【００３７】
次いで，Ｓ１０５において，ダム情報読み込み手段４１により，ダムの形状，直径等のダム情報を読み込む。
そして，Ｓ１０６において，大ダム配置手段４３１により，上記外周部１３に大ダム２１を配置する。大ダム２１は，上記図５（実施形態例２）において説明したように，外周部に２列配置する。
【００３８】
次に，大ダム２１の配置が終了した後，Ｓ１０７においては，残余認識手段４４により，上記外周部１３において大ダム２１が配置されていない残余部分を認識する。そして，Ｓ１０８において，メッシュ分割配置手段４５，小ダム配置手段４３２により，上記図５に示すごとく，大ダム２１の周囲に小ダム２２を配置する。小ダム２２の配置は，上記残余部分を認識しながら，小ダム２２の配置が可能な残余部分がなくなるまで，Ｓ１０７と１０８の間を繰り返して行なう。
【００３９】
次に，小ダム２２の配置終了後には，Ｓ１０９において，製品間隙認識手段４６により，回路形成部１１，１１の間の製品間隙２４の大きさを，上記内層基板１，回路形成部１１のサイズ，回路形成部１１の配置位置等の情報から認識する。そして，Ｓ１１０において，間隙ダム配置手段４３３により，上記製品間隙２４に間隙ダム２５を配置する。間隙ダム２５の配置終了により，ダム配置プログラムは終了する。
【００４０】
次いで，上記ダム配置後の内層基板のデ−タを，内層基板デ−タ出力手段４７により出力し，プロッタ装置４９によりプリントアウトする。
これら一連の操作はＣＡＤ装置を用いて行なうことができる。
【００４１】
実施形態例６
本例は，図１０〜図１６に示すごとく，外周部１３への大ダム２１の配置，メッシュ分割配置手段４５による小ダム２２の配置方法につき説明する。
まず，図１０に示すごとく，外周部には２列の大ダム２１を配置する。次に，小ダム２２の配置に当たっては，上記メッシュ分割配置手段４５により，大ダム２１の各縦中心線３１の間を２分割する縦分割線３５を形成し，一方大ダム２１の各横中心線３２の間を２分割する横分割線３６を形成する。
次いで，この両分割線３５，３６によって形成されるメッシュの交点に小ダム２２を配置する。
【００４２】
次に，図１１は，上記中心線３２と分割線３６の間を更に２分割し，即ち各中心線３１の間を４分割し，その位置に更に別の小さい小ダム２２１を形成する例を示している。
図１２は，上記中心線３２と上記分割線３６の間を３分割して，小ダム２２３を形成する例を示している。
【００４３】
図１３は，上記と同様にして，大ダム２１の中心線の間を複数に分割し，大ダム２１と小ダム２２との間の対角線上に更に小さい小ダム２２４を配置した例を示している。
このようにして，大ダム２１の中心線間を任意に分割し，その分割線の交点に小ダム更には小さい小ダムを配置することができる。
【００４４】
実施形態例７
本例は，図１４に示すごとく，大ダム２１を外周部１３に配置する場合の例を示している。
即ち，まず外周部１３の任意の位置に第１の大ダム２１を配置する（図１４Ａ）。次に，第１の大ダム２１を基準として下方へｙ₂移動した位置に第２の大ダム２１を配置していく（同図Ｂ）。
【００４５】
また，同図Ｃに示すごとく，第１の大ダム２１を基準として右方向へｘ₂移動した位置に第２の大ダム２１を配置する。
また，同図Ｄに示すごとく，第１の大ダム２１を基準として，右方向へｘ₃，下方向へｙ₃移動した位置に第２の大ダム２１を配置する。
以下，上記の配置方法に従って，前記実施形態例１〜５に示したごとく，大ダムを配置する。
【００４６】
実施形態例８
本例は，図１５〜図１８に示すごとく，大ダム２１，小ダム２２，間隙ダム２５を配置する（図１５Ａ）に当たって，図１５Ｂに示すごとく，外周部を上下のＦ領域と左右のＨ領域に，また製品間隙２４をＧ領域に区分して，それぞれ大ダム２１，小ダム２２，間隙ダム２５を配置する場合の例を示している。
【００４７】
即ち，まずＦ領域に関しては，図１６Ａに示すごとく，左上端の基準点Ｆ１からｘ₁，ｙ₁，の位置に大ダム２１を配置し，同図Ｂに示すごとく，右方向へ大ダムを順次配置する。次いで，Ｆ領域において，大ダム２１の間の上下に，更に大ダムが配置できるか否か調べる。この場合には同図に点線円で示すごとく，大ダムがはみ出てしまいこの配置ができない。
そこで，同図Ｃに示すごとく，前記実施形態例７に示したごとく，分割線によるメッシュを仮形成し，メッシュの交点に小ダム２２を形成する。
【００４８】
次に，製品間隙のＧ領域に関しては，図１７Ａに示すごとく，製品間隙が狭いために，Ｆ領域に配置した大ダム２１と同じ大きさのダム（点線円）２１９を配置しようとしても，それがはみ出してしまう。
そこで，図１７Ｂに示すごとく，大ダムよりも小さい小ダム２２と同じ大きさの間隙ダム２５を配置する。更に，同図Ｃに示すごとく，この間隙ダム２５の間で，かつその上下に間隙ダムが形成できるか否か判断する。しかし，この場合には間隙ダムが点線円で示すごとく，Ｇ領域からはみ出てしまう。そのため，間隙ダム２５は１列のみとなる。
【００４９】
次に，Ｈ領域に関しては，図１８Ａに示すごとく，その左上端を基準点Ｈ１として，ｘ₁，ｙ₁，の位置に大ダム２１を配置し，同図Ｂに示すごとく，下方へ大ダム２１を配置していく。また，大ダム２１の間の左右に，更に大ダムを配置できるか否か調べる。しかし，同図Ｂに示すごとく，その大ダムは点線円で示すごとく，左右にはみ出てしまい，配置できない。
そこで，同図Ｃに示しごとく，大ダム２１の間の左右に小ダム２２を配置する。この小ダム２２の配置は，前記実施形態例７に示した分割線を利用して行なう。
【００５０】
以上述べた実施形態例５〜実施形態例８いずれにおいても，上記実施形態例１に示したと同様の優れた内層基板を得ることができ，また内層基板に対するダムの配置を容易に行なうことができる。
【００５１】
【発明の効果】
本発明によれば，樹脂接着剤の流出，エアボイドの発生がない内層基板，及び該内層基板にダムを配置するための設計装置を提供することができる。
【図面の簡単な説明】
【図１】実施形態例１における，内層基板の大ダム，小ダム，間隙ダムの配置状態を示す説明図。
【図２】実施形態例１における，図１のＡ−Ａ線矢視断面図。
【図３】実施形態例１における，図１のＢ−Ｂ線矢視断面図。
【図４】実施形態例１における，回路形成部の説明図。
【図５】実施形態例２における，内層基板の大ダム，小ダム，間隙ダムの配置状態を示す説明図。
【図６】実施形態例３における，内層基板の大ダム，小ダム，間隙ダムの配置状態を示す説明図。
【図７】実施形態例４における，内層基板の大ダム，小ダム，間隙ダムの配置状態を示す説明図。
【図８】実施形態例５における，内層基板の設計装置のブロック線図。
【図９】実施形態例５における，ダム配置のフロ─チャ─ト。
【図１０】実施形態例６における，大ダム，小ダムの配置方法の説明。
【図１１】実施形態例６における，大ダムの間への小ダム等の配置説明。
【図１２】実施形態例６における，大ダムの間への小ダム等の配置説明。
【図１３】実施形態例６における，大ダムの間への小ダム等の配置説明。
【図１４】実施形態例７における，大ダムの配置の説明図。
【図１５】実施形態例８における，内層基板の，（Ａ）大ダム配置図，（Ｂ）領域説明図。
【図１６】実施形態例８における，Ｆ領域への（Ａ）大ダム配置図，（Ｂ）大ダム配線検討図，（Ｃ）大ダム，小ダム配置図。
【図１７】実施形態例８における，Ｇ領域への，（Ａ）間隙ダム配置検討図，（Ｂ）間隙ダム配置図，（Ｃ）上下への間隙ダム配置検討図。
【図１８】実施形態例８における，Ｈ領域への，（Ａ）大ダム配置検討図，（Ｂ）左右への大ダム配置検討図，（Ｃ）大ダム，小ダム配置図。
【図１９】従来例における，内層基板へのダム配置説明図。
【図２０】従来例における，製品間隙の狭い内層基板へのダム配置説明図。
【符号の説明】
１．．．内層基板，
１１．．．回路形成部，
１１５．．．導体パタ─ン，
１２．．．基板周縁，
１３．．．外周部，
２１．．．大ダム，
２２．．．小ダム，
２４．．．製品間隙，
２５．．．間隙ダム，
３１，３２．．．中心線，
３５，３６．．．分割線，[0001]
【Technical field】
The present invention relates to an inner layer substrate used for a multilayer printed wiring board and a design apparatus for arranging a dam on the inner layer substrate.
[0002]
[Prior art]
A multilayer printed wiring board is obtained by fixing a plurality of laminated substrates to each other with a resin adhesive, and forming a conductor pattern inside.
When three or more substrates are stacked, one or more inner layer substrates are disposed between the upper and lower substrates. A conductor pattern is formed on the inner layer substrate.
That is, as shown in FIG. 19, the inner layer substrate 9 has two circuit forming portions 91 each formed with a conductor pattern 910. An outer peripheral portion 93 is formed between the circuit forming portion 91 and the substrate peripheral edge 92 of the inner layer substrate, and a large number of dams 95 are provided in the outer peripheral portion 93. There is a product gap 95 between both circuit forming portions 91, and a dam 95 is also provided in this portion.
[0003]
The dam 95 has a thickness of about 35 μm. As described above, when the inner layer substrate 9 is bonded to the upper and lower substrates via a resin adhesive, the dam 95 causes the resin adhesive to flow out from between the two, and air voids are formed between the two. This is provided to prevent the occurrence (Japanese Patent Laid-Open No. 6-177538).
After the lamination and bonding as described above, the laminated plate is cut along the cutting line 911 of the inner layer substrate to obtain a single substrate. The cutting line 911 is located on the outer periphery of the circuit forming portion 91.
[0004]
[Problems to be solved]
However, in the conventional inner layer substrate 9, since the dam 95 is the same size, the gap between the dams 95 is relatively simple, the resin adhesive easily flows out, the resin adhesive flows out, and the air voids. There was a risk of causing.
In recent years, as shown in FIG. 20, the size of the circuit forming portion 91 provided with the conductor pattern 910 is increased and the product gap 96 between the circuit forming portions 91 is reduced along with the high function wiring. ing. Therefore, as shown in FIG. 20, it is impossible to arrange a dam having the same size as the dam 95 arranged on the outer peripheral portion 93 in the product gap 96.
[0005]
In view of the conventional problems, the present invention intends to provide an inner layer substrate in which resin adhesive does not flow out and air voids are generated, and a design apparatus for arranging a dam on the inner layer substrate.
[0006]
[Means for solving problems]
The invention of claim 1 is an inner layer substrate used for a multilayer printed wiring board.
The inner layer substrate has a plurality of circuit forming portions, and dams for preventing outflow of the resin adhesive are formed on the outer peripheral portion between the circuit forming portion and the substrate periphery. Become
In addition, the dam is provided with a mixture of a large dam with a large shape and a small dam with a small shape.
On the other hand, a gap dam having a size smaller than the large dam provided on the outer peripheral portion and larger than the small dam is formed in the product gap between the plurality of circuit forming portions. On the board.
[0007]
What should be noted most in the present invention is that the large dam and the small dam are mixedly formed on the outer peripheral portion of the inner layer substrate, and the product gap is smaller than the large dam and larger than the small dam. The gap dam is provided.
The size of the large dam is preferably 5.0 to 10.0 mm in diameter, and the size of the small dam is preferably 2.0 to 4.0 mm. If it is smaller than these sizes, it is difficult to completely prevent the resin adhesive from flowing out of the outer peripheral portion and the generation of air voids. On the other hand, when it is larger than these sizes, it may be difficult to arrange the large dam and the small dam on the outer periphery.
The large dam, small dam, and gap dam are disposed on both the front and back surfaces of the inner substrate, for example.
[0008]
Next, the effects of the present invention will be described.
In the inner layer substrate of the present invention, first, a large dam and a small dam are mixedly arranged on the outer peripheral portion, and therefore the passage between them is bent in a complicated manner. Therefore, the air existing between the substrates is easily released from these passages. On the other hand, the resin adhesive does not flow out.
[0009]
Therefore, the outflow of the resin adhesive and the generation of air voids can be prevented. In addition, since the gap dam of the above size is provided between the product gaps, even if the product gap is narrow, a gap dam of any size can be arranged according to the width of the gap, and the outflow of the resin adhesive and Generation of air voids can be prevented.
[0010]
Next, as in the invention of claim 2, the gap dams preferably have the same size as the small dams and are arranged in a plurality of rows. In this case, since the gap dam is the same as the small dam, both designs are easy.
As in the invention of claim 3, it is preferable that two or more large dams in the outer peripheral portion are arranged, and a small dam is arranged between the large dams (FIGS. 5 to 7). In this case, the passage formed between them becomes complicated, and the outflow of the resin adhesive and the generation of air voids can be further prevented.
[0011]
Next, as in the invention of claim 4, it is preferable that a small dam is interposed between the center lines of the arrangement of the large dams (FIG. 7). In this case as well, the outflow of the resin adhesive and the generation of air voids can be further prevented in the same manner as described above.
[0012]
Next, as in the invention of claim 5, a large dam and a small dam for preventing the resin adhesive from flowing out to the outer peripheral portion between the circuit forming portion and the peripheral edge of the inner layer substrate for the multilayer printed wiring board. An inner-layer board design device for laying out many dams,
Dam information reading means for reading information on large dams and small dams to be arranged on the outer periphery of the inner layer substrate;
An outer periphery recognition means for recognizing the size of the outer periphery;
A large dam arrangement means for arranging a plurality of large dams obtained by the dam information reading means on the outer circumference recognized by the outer circumference recognition means;
A residual recognition means for recognizing the size of the residual portion in the outer peripheral portion after the large dam is arranged;
There is provided an apparatus for designing an inner layer board comprising small dam arrangement means for arranging a plurality of small dams obtained by the dam information reading means in the residual portion recognized by the residual recognition means.
[0013]
The operation of the design apparatus will be described.
In the design device, first, the information on the large dam and the small dam is read by the dam information reading means. On the other hand, the size of the outer periphery of the inner layer substrate is recognized by the outer periphery recognition means. A plurality of large dams obtained from the dam information reading means are arranged on the outer periphery recognized as described above.
The placement of the large dam on the outer peripheral portion is performed, for example, until no large dam can be disposed on the outer peripheral portion, that is, until there is no space for placing the large dam.
[0014]
Next, after the arrangement of the large dam is finished, the remaining portion where the large dam is not arranged on the outer periphery is recognized by the residual recognition means.
And a small dam is arrange | positioned with respect to the said remaining part by the said small dam arrangement | positioning means.
These arrangements are performed by, for example, a CAD (Computer Aided Design) apparatus.
[0015]
By the design apparatus, a large dam and a small dam can be easily arranged on the outer peripheral portion, and an excellent inner layer substrate as described above can be obtained. In addition, since the large dam and the small dam are mixedly arranged, the amount of CAD data can be reduced as compared with the case where only the small dam is arranged.
[0016]
Next, when the inner substrate has a plurality of circuit forming portions and product gaps between the circuit forming portions as in the invention of claim 6, the product gap It is preferable to have a product gap recognizing means for recognizing the size of the gap and a gap dam arranging means for arranging a gap dam having a size smaller than the large dam and larger than the small dam in the product gap.
Thus, even for an inner layer substrate having a plurality of circuit forming portions, a gap dam can be easily arranged in the product gap, and an excellent inner layer substrate as described above can be obtained.
[0017]
Next, as in the invention of claim 7, the large dam arranging means, the small dam arranging means and the gap dam arranging means are arranged repeating means for repeating the arrangement until the large dam, small dam and gap dam cannot be arranged, respectively. It is preferable to have.
Thereby, a large dam, a small dam, and a gap dam can be arranged as much as possible with respect to the outer peripheral portion and the product gap.
[0018]
Next, as in the invention of claim 8, the outer peripheral part recognition means includes an inner layer board size reading means for reading the size of the inner layer board, a circuit forming part size reading means for reading the size of the circuit forming part, and an inner layer board. It is preferable to have circuit formation unit arrangement information reading means for reading arrangement information for arranging the circuit formation unit.
As a result, information on the inner layer substrate, each size of the circuit forming portion provided on the inner layer substrate, and the position of the circuit forming portion disposed on the inner layer substrate can be obtained, and the size of the outer peripheral portion and the product gap can be easily recognized. .
[0019]
Next, as in the invention of claim 9, between the vertical center line passing through the center of the large dam arranged in plural and the mesh formed by the horizontal center line orthogonal to this and passing through the center of the large dam, It is preferable to have mesh division arrangement means for arranging the center of the small dam with respect to the division line dividing in two or more in the vertical direction and the horizontal direction.
Thereby, a further small dam can be arranged between the meshes formed by the vertical and horizontal center lines passing through the center of the large dam, and the arrangement of the small dam is facilitated.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Embodiment 1
An inner layer substrate according to an embodiment of the present invention will be described with reference to FIGS.
As shown in FIG. 1, the inner layer substrate 1 of this example is an inner layer substrate 1 used for a multilayer printed wiring board. The inner layer substrate 1 has a plurality of circuit forming portions 11 and the circuit forming portion 11. A dam for preventing the outflow of the resin adhesive is formed on the outer peripheral portion 13 between the peripheral edge 12 and the substrate periphery 12.
[0021]
Further, the dam is provided with a plurality of large dams 21 having a large shape and small dams 22 having a small shape, respectively, and in the product gap 24 between the plurality of circuit forming portions 11. Are formed with two rows of gap dams 25 which are smaller than the large dam 21 provided on the outer peripheral portion 13 and have a size larger than the small dam 22.
[0022]
The large dam 21, the small dam 22 and the gap dam 25 are perfect circles, and are provided on both the front and back surfaces of the inner layer substrate 1 as shown in FIGS. The large dams 21 are arranged in two rows in the vertical direction, and small dams 22 are arranged on the right side or the left side of the large dam 21 in the horizontal center line passing through the center of the large dam 21.
In this example, the diameter of each dam is 6.0 mm for the large dam 21, 3.0 mm for the small dam 22, 3.0 mm for the gap dam 25, and their thickness is 35 μm.
[0023]
Further, as shown in FIG. 4, a conductor pattern 115 is formed in the circuit forming portion 11. On the outer periphery of the circuit forming portion 11, a cutting line 111 that is cut after being stacked is formed.
Further, these dams are formed at the same time when the conductor pattern 115 is formed in the circuit forming portion 11 of the inner substrate 1, for example. That is, when the conductor pattern 115 is formed using a copper-clad laminate, the large dam 21, the small dam 22, and the gap dam 25 are formed by etching or the like. In addition, as will be described later, these dams are arranged by using a design device using CAD.
[0024]
Next, the effect of this example will be described.
In the inner layer substrate 1 of this example, since the large dam 21 and the small dam 22 are mixed in the outer peripheral portion 13, the passage between them is formed in a complicated manner. Therefore, the outflow of resin adhesive and the generation of air voids can be prevented.
Further, since the gap dam 25 of the above size is provided in the product gap 24, even if the gap between the product gaps 24 is narrowed, a gap dam of any size can be arranged according to the width. Prevents resin adhesive from flowing out and air voids.
[0025]
Embodiment 2
In this example, as shown in FIG. 5, two rows of large dams 21 are arranged on the outer peripheral portion 13 between the circuit forming portion 11 and the substrate peripheral edge 12, and at the center position of the portion surrounded by the four large dams. This is an example in which a dam 22 is arranged.
And the said small dam 22 is formed on the mesh of the dividing lines 35 and 36 each divided | segmented into the vertical direction and the horizontal direction between each vertical center line 31 and each horizontal center line 32 which pass through the center of the large dam 21. Has been.
[0026]
In addition, a gap dam of one row is formed in the product gap 24 in which the interval is reduced due to the large formation of the circuit forming portion 11.
Others are the same as the first embodiment. Also in this example, the same effects as those of the first embodiment can be obtained.
[0027]
Embodiment 3
As shown in FIG. 6, this example shows an example in which the outer peripheral portion 13 in the vertical direction is narrowed in the second embodiment.
In this example, one row of large dams 21 is formed on the outer peripheral portion 13 in the vertical direction. The small dam 22 is divided into two dividing lines 36 between the horizontal center lines 32 of the large dam 21 and dividing lines 35 (two divided between the vertical center lines 31 of the large dam 21 in the upper and lower outer peripheral portions 13. (Virtual line).
Others are the same as the second embodiment.
Also in this example, the same effects as those of the second embodiment can be obtained.
[0028]
Embodiment 4
As shown in FIG. 7, this example shows an example in which a small dam 22 is disposed between the vertical and horizontal center lines 31 and 32 of the large dam 21 in the outer peripheral portion 13. In this example, the interval between the center lines 31 and 32 is larger than that in the third embodiment, and the small dams 22 are arranged between the large dams 21 in a checkered pattern. .
Further, in the outer peripheral portion 13, a small dam 21 is arranged at a portion facing the circuit forming portion 11.
Others are the same as the second embodiment.
Also in this example, the same effect as in the second embodiment can be obtained.
[0029]
Embodiment 5
In this example, as shown in FIGS. 8 and 9, an inner layer substrate design apparatus and its flowchart are shown.
As shown in FIGS. 8, 1, and 5, the design apparatus of the present example has a resin adhesive on the outer peripheral portion 13 between the circuit forming portion 11 and the substrate peripheral edge 12 in the inner layer substrate 1 for a multilayer printed wiring board. This is a design apparatus for the inner layer substrate 1 for arranging a large number of large dams 21 and small dams 22 for preventing the outflow of the inner layer substrate.
[0030]
The design apparatus includes dam information reading means 41 for reading information on the large dam 21 and the small dam 22 to be arranged on the outer peripheral portion 13 of the inner layer substrate 1;
An outer periphery recognition means 42 for recognizing the size of the outer periphery 13;
A large dam arrangement means 431 for arranging a plurality of large dams 21 obtained by the dam information reading means 41 on the outer circumference part 13 recognized by the outer circumference part recognition means 42;
Residual recognition means 44 for recognizing the size of the residual portion in the outer peripheral portion 13 after the large dam 21 is disposed;
Small dam arrangement means 432 for arranging a plurality of small dams 22 obtained by the dam information reading means 41 in the residual portion recognized by the residual recognition means 44.
[0031]
Further, a product gap recognition means 46 for recognizing the size of the product gap 24, and a gap in which a gap dam 25 having a size smaller than the large dam 21 and larger than the small dam 22 is disposed in the product gap 24. It has a dam arrangement means 433.
[0032]
The large dam arrangement means 431, the small dam arrangement means 432, and the gap dam arrangement means 433 are arranged repeatedly for repeating the arrangement until the large dam 21, the small dam 22, and the gap dam 24 cannot be arranged (not shown). Have
[0033]
The outer periphery recognition means 42 includes an inner layer board size reading means 421 for reading the size of the inner layer board 1, a circuit forming section size reading means 422 for reading the size of the circuit forming section 11, and a circuit forming section on the inner layer board 1. Circuit formation unit arrangement information reading means 423 for reading arrangement information for arrangement.
[0034]
Furthermore, between the mesh formed by the vertical center line 31 passing through the center of the large dam 21 and the horizontal center line 31 orthogonal to the center of the large dam 21, the vertical direction and Mesh division arrangement means 45 for arranging the center of the small dam 22 is provided on the division lines 35 and 36 divided in the horizontal direction.
[0035]
Next, a method for arranging large dams, small dams, and gap dams on the inner layer substrate using the design apparatus will be described with reference to the inner layer substrate 1 shown in FIG. 5 (Embodiment 2) as an example.
First, in S (step) 101, the size of the inner layer substrate 1 is read by the inner layer substrate size reading means 421. Next, in S102, the size of the circuit forming unit 11 is read by the circuit forming unit size reading unit 422, and in S103, information on where the circuit forming unit is to be arranged on the inner substrate is obtained by the circuit forming unit arrangement information reading unit 423. Read.
[0036]
Then, in S 104, it is formed between the substrate peripheral edge 12 of the inner layer substrate 1 and the circuit forming portion 11 from the size of the inner layer substrate 1 and the circuit forming portion 11 and the position of the circuit forming portion 11 in the inner layer substrate 1. The outer peripheral portion 13 to be recognized is recognized.
[0037]
Next, in S105, the dam information reading means 41 reads dam information such as the dam shape and diameter.
In S106, the large dam 21 is arranged on the outer peripheral portion 13 by the large dam arrangement means 431. As described in FIG. 5 (Embodiment 2), the large dams 21 are arranged in two rows on the outer periphery.
[0038]
Next, after the placement of the large dam 21 is completed, in S107, the remaining recognition unit 44 recognizes the remaining portion where the large dam 21 is not disposed in the outer peripheral portion 13. In S108, the small dam 22 is arranged around the large dam 21 by the mesh division arrangement means 45 and the small dam arrangement means 432 as shown in FIG. The placement of the small dams 22 is repeated between S107 and S108 while recognizing the above remaining portions until there is no remaining portion where the small dam 22 can be disposed.
[0039]
Next, after the arrangement of the small dams 22 is finished, in S109, the product gap recognizing means 46 determines the size of the product gap 24 between the circuit forming portions 11 and 11 to the size of the inner layer substrate 1 and the circuit forming portion 11. , From the information such as the arrangement position of the circuit forming unit 11. In S110, the gap dam 25 is arranged in the product gap 24 by the gap dam arrangement means 433. When the arrangement of the gap dam 25 ends, the dam arrangement program ends.
[0040]
Next, the data of the inner layer substrate after the dam arrangement is output by the inner layer substrate data output means 47 and printed out by the plotter device 49.
A series of these operations can be performed using a CAD apparatus.
[0041]
Embodiment 6
In this example, as shown in FIGS. 10 to 16, the arrangement of the large dam 21 on the outer peripheral portion 13 and the arrangement method of the small dam 22 by the mesh division arrangement means 45 will be described.
First, as shown in FIG. 10, two rows of large dams 21 are arranged on the outer periphery. Next, when arranging the small dams 22, the mesh dividing arrangement means 45 forms the vertical dividing lines 35 that divide the respective vertical center lines 31 of the large dam 21 into two, while each horizontal center of the large dam 21 is formed. A horizontal dividing line 36 that divides the line 32 into two is formed.
Next, the small dam 22 is arranged at the intersection of the mesh formed by both the dividing lines 35 and 36.
[0042]
Next, FIG. 11 shows an example in which the center line 32 and the dividing line 36 are further divided into two parts, that is, each center line 31 is divided into four parts, and another small dam 221 is formed at that position. Show.
FIG. 12 shows an example in which a small dam 223 is formed by dividing the center line 32 and the dividing line 36 into three.
[0043]
FIG. 13 shows an example in which the center line of the large dam 21 is divided into a plurality of parts and the smaller dam 224 is arranged on the diagonal line between the large dam 21 and the small dam 22 in the same manner as described above. Yes.
In this manner, the center line of the large dam 21 can be arbitrarily divided, and a small dam or even a small dam can be arranged at the intersection of the dividing lines.
[0044]
Embodiment 7
In this example, as shown in FIG. 14, an example in which the large dam 21 is arranged on the outer peripheral portion 13 is shown.
That is, first, the first large dam 21 is disposed at an arbitrary position on the outer peripheral portion 13 (FIG. 14A). Next, the second large dam 21 is arranged at a position where y _{2 has been} moved downward with respect to the first large dam 21 (FIG. B).
[0045]
Further, as shown in FIG. 3C, the second large dam 21 is arranged at a position moved x _{2 in the} right direction with respect to the first large dam 21.
Further, as shown in FIG. D, based on the first large dam 21, x _3, arranging the second large dam 21 at a position y ₃ moves downward to the right.
Hereinafter, in accordance with the above arrangement method, a large dam is arranged as shown in the first to fifth embodiments.
[0046]
Embodiment 8
In this example, as shown in FIGS. 15 to 18, when the large dam 21, the small dam 22 and the gap dam 25 are arranged (FIG. 15A), the outer peripheral portion is divided into the upper and lower F regions and the left and right H regions as shown in FIG. 15B. In this example, the large dam 21, the small dam 22, and the gap dam 25 are respectively arranged in the region and the product gap 24 in the G region.
[0047]
That is, for the F region, as shown in FIG. 16A, a large dam 21 is arranged at the position of x ₁ , y ₁ from the upper left reference point F1, and as shown in FIG. Arrange sequentially. Next, in the F region, it is examined whether or not a large dam can be arranged above and below the large dam 21. In this case, as shown by the dotted circle in the figure, a large dam protrudes and this arrangement cannot be made.
Therefore, as shown in FIG. 7C, as shown in the seventh embodiment, a mesh by dividing lines is temporarily formed, and a small dam 22 is formed at the intersection of the mesh.
[0048]
Next, regarding the G region of the product gap, as shown in FIG. 17A, since the product gap is narrow, even if a dam (dotted circle) 219 having the same size as the large dam 21 arranged in the F region is arranged, Will stick out.
Therefore, as shown in FIG. 17B, a gap dam 25 having the same size as the small dam 22 smaller than the large dam is disposed. Further, as shown in FIG. C, it is determined whether or not a gap dam can be formed between and above and below the gap dam 25. However, in this case, the gap dam protrudes from the G region as indicated by a dotted circle. Therefore, the gap dam 25 has only one row.
[0049]
Next, with respect to the H region, as shown in FIG. 18A, a large dam 21 is arranged at the position of x ₁ , y ₁ , with the upper left end as a reference point H1, and as shown in FIG. 21 is arranged. Further, it is examined whether or not a larger dam can be arranged on the left and right between the large dams 21. However, as shown in Fig. B, the large dam protrudes to the left and right as shown by the dotted circle and cannot be placed.
Therefore, as shown in FIG. 3C, small dams 22 are arranged on the left and right between the large dams 21. The small dams 22 are arranged using the dividing lines shown in the seventh embodiment.
[0050]
In any of Embodiment Examples 5 to 8 described above, an excellent inner layer substrate similar to that shown in Embodiment Example 1 can be obtained, and a dam can be easily arranged on the inner layer substrate. .
[0051]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the design apparatus for arrange | positioning a dam to this inner-layer board | substrate which does not generate | occur | produce the outflow of a resin adhesive and an air void, and this inner-layer board | substrate can be provided.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing an arrangement state of large dams, small dams and gap dams of an inner layer substrate in Embodiment 1;
2 is a cross-sectional view taken along line AA in FIG.
3 is a cross-sectional view taken along line BB in FIG.
FIG. 4 is an explanatory diagram of a circuit formation unit in the first embodiment.
FIG. 5 is an explanatory diagram showing an arrangement state of large dams, small dams, and gap dams in the inner layer substrate in the second embodiment.
FIG. 6 is an explanatory diagram showing an arrangement state of large dams, small dams, and gap dams on the inner layer substrate in the third embodiment.
7 is an explanatory diagram showing an arrangement state of large dams, small dams, and gap dams of an inner layer substrate in Embodiment 4. FIG.
8 is a block diagram of an inner layer substrate design apparatus in Embodiment 5. FIG.
FIG. 9 is a flow chart of a dam arrangement in the fifth embodiment.
FIG. 10 is a diagram illustrating an arrangement method of large dams and small dams in Embodiment 6.
FIG. 11 is a diagram illustrating the arrangement of small dams and the like between large dams in Embodiment 6.
FIG. 12 is a diagram illustrating the arrangement of small dams and the like between large dams in Embodiment 6.
FIG. 13 is a diagram illustrating the arrangement of small dams and the like between large dams in Embodiment 6.
FIG. 14 is an explanatory diagram of arrangement of large dams in Embodiment 7.
15A is an arrangement diagram of a large dam, and FIG. 15B is an explanatory diagram of an area of an inner layer substrate in Embodiment 8. FIG.
FIGS. 16A and 16B are (A) a large dam layout diagram, (B) a large dam wiring diagram, and (C) a large dam and a small dam layout diagram in the F region in Embodiment 8.
FIGS. 17A and 17B are (A) a gap dam arrangement view, (B) a gap dam arrangement view, and (C) an upper and lower gap dam arrangement view in the G region in the eighth embodiment.
FIGS. 18A and 18B are (A) a large dam layout study diagram, (B) a large dam layout study diagram to the left and right, and (C) a large dam and a small dam layout diagram in the H region in Embodiment 8.
FIG. 19 is an explanatory diagram of dam arrangement on the inner layer substrate in the conventional example.
FIG. 20 is a diagram for explaining the arrangement of dams on an inner layer substrate having a narrow product gap in a conventional example.
[Explanation of symbols]
1. . . Inner layer substrate,
11. . . Circuit forming section,
115. . . Conductor pattern,
12 . . Substrate periphery,
13. . . The outer periphery,
21. . . Large dam,
22. . . Small dam,
24. . . Product gap,
25. . . Gap dam,
31, 32. . . Centerline,
35, 36. . . Dividing line,

Claims

In the inner layer board used for multilayer printed wiring boards,
The inner layer substrate has a plurality of circuit forming portions, and dams for preventing outflow of the resin adhesive are formed on the outer peripheral portion between the circuit forming portion and the substrate periphery. Become
In addition, the dam is provided with a mixture of a large dam with a large shape and a small dam with a small shape.
On the other hand, a gap dam having a size smaller than the large dam provided on the outer peripheral portion and larger than the small dam is formed in the product gap between the plurality of circuit forming portions. substrate.

2. The inner layer substrate according to claim 1, wherein the gap dams have the same size as the small dams and are arranged in a plurality of rows.

3. The inner layer substrate according to claim 1, wherein two or more rows of large dams in the outer peripheral portion are disposed, and small dams are disposed therebetween.

The inner layer substrate according to any one of claims 1 to 3, wherein a small dam is interposed between center lines of the arrangement rows of the large dams.

Inner layer board for arranging a large number of large dams and small dams to prevent the outflow of resin adhesive on the outer peripheral part between the circuit forming part and the board periphery in the inner layer board for multilayer printed wiring boards Design equipment,
Dam information reading means for reading information on large dams and small dams to be arranged on the outer periphery of the inner layer substrate;
An outer periphery recognition means for recognizing the size of the outer periphery;
A large dam arrangement means for arranging a plurality of large dams obtained by the dam information reading means on the outer circumference recognized by the outer circumference recognition means;
A residual recognition means for recognizing the size of the residual portion in the outer peripheral portion after the large dam is arranged;
An apparatus for designing an inner layer board, comprising: a small dam arrangement means for arranging a plurality of small dams obtained by the dam information reading means in the residual portion recognized by the residual recognition means.

6. The product gap recognizing means according to claim 5, wherein the inner layer substrate has a plurality of circuit forming portions and a product gap between the circuit forming portions, and recognizes the size of the product gap. And a gap dam arrangement means for arranging a gap dam that is smaller than the large dam and larger than the small dam in the product gap.

7. The large dam arrangement means, the small dam arrangement means, and the gap dam arrangement means according to claim 5 or 6, wherein the large dam, the small dam, and the gap dam have arrangement repeating means that repeat the arrangement until the large dam, the small dam, and the gap dam cannot be arranged, respectively. Design device for inner layer substrates.

8. The outer periphery recognition means according to claim 5, wherein the outer periphery recognition means includes an inner layer board size reading means for reading the size of the inner layer board, a circuit forming part size reading means for reading the size of the circuit forming part, and an inner layer board. An apparatus for designing an inner layer board, comprising: circuit formation unit arrangement information reading means for reading arrangement information for arranging a circuit formation unit.

In any one of Claims 5-8, between the vertical centerline which passes along the center of the large dam arranged in multiple numbers, and the mesh formed by the horizontal centerline which crosses perpendicularly and passes through the center of a large dam, respectively An apparatus for designing an inner layer board, comprising mesh dividing arrangement means for arranging the center of a small dam on a dividing line dividing in two or more in the vertical direction and the horizontal direction.