JP3795500B2 - リトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法および装置 - Google Patents
リトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法および装置 Download PDFInfo
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- JP3795500B2 JP3795500B2 JP2004140503A JP2004140503A JP3795500B2 JP 3795500 B2 JP3795500 B2 JP 3795500B2 JP 2004140503 A JP2004140503 A JP 2004140503A JP 2004140503 A JP2004140503 A JP 2004140503A JP 3795500 B2 JP3795500 B2 JP 3795500B2
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- Prior art keywords
- prism
- optical axis
- diffraction grating
- light
- littrow
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/143—Littman-Metcalf configuration, e.g. laser - grating - mirror
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Description
sinφ=sinθ/n …(1)
で表される。プリズムa面で屈折した後の光はα=90°+θ+φの方向へ向かい、角度45°+φでプリズムb面に入射して全反射され、α=180°+θ−φの方向へ進む。この光はプリズムc面に角度φで入射して屈折する。このとき屈折角χは
sinχ=nsinφ …(2)
によって与えられる。上記式(1)と上記式(2)の比較からχ=θとなる。そのため、プリズムc面において屈折した後の光、すなわち図1に示したECDLシステムの出力光は、回転角θに依らず常にα=180°の方向に出射される。
32 コリメートレンズ
33 回折格子
34 回折格子の回転軸
35 プリズム
36 治具
37 入射光
38 0次回折光
39 出力光
Claims (4)
- リトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法において、
(a)回折格子とプリズムとを治具で所定の配置となるように一体的に固定し、
(b)前記回折格子とプリズムの回転軸での回転により、入射光の波長を変化させるとともに、該波長の変化によっても出力光の光軸が不変であることを特徴とするリトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法。 - (a)レーザー光を入射する手段と、
(b)前記レーザー光が入射する回折格子とプリズムとを所定の配置となるように一体的に固定する治具と、
(c)前記回折格子とプリズムとを一体的に回転可能な回転軸とを具備することを特徴とするリトロー型外部共振器半導体レーザーにおける光軸のずれの補正装置。 - 請求項2記載のリトロー型外部共振器半導体レーザーにおける光軸のずれの補正装置において、前記プリズムは底面が直角二等辺三角形の柱形状であることを特徴とするリトロー型外部共振器半導体レーザーにおける光軸のずれの補正装置。
- 請求項3記載のリトロー型外部共振器半導体レーザーにおける光軸のずれの補正装置において、前記回折格子の格子面と前記柱形状のプリズムの直角二等辺三角形の斜面にあたる面とが平行に配置されることを特徴とするリトロー型外部共振器半導体レーザーにおける光軸のずれの補正装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004140503A JP3795500B2 (ja) | 2004-05-11 | 2004-05-11 | リトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法および装置 |
PCT/JP2005/007675 WO2005109586A1 (ja) | 2004-05-11 | 2005-04-22 | リトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法および装置 |
AT05734437T ATE527729T1 (de) | 2004-05-11 | 2005-04-22 | Korrekturverfahren und -einrichtung für die abweichung der optischen achse eines littrow- halbleiterlasers mit externem oszillator |
EP05734437A EP1746693B1 (en) | 2004-05-11 | 2005-04-22 | Littrow external oscillator semiconductor laser optical axis deviation correction method and device |
US11/587,387 US7706425B2 (en) | 2004-05-11 | 2005-04-22 | Littrow external oscillator semiconductor laser optical axis deviation correction method and device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004140503A JP3795500B2 (ja) | 2004-05-11 | 2004-05-11 | リトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法および装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005322813A JP2005322813A (ja) | 2005-11-17 |
JP3795500B2 true JP3795500B2 (ja) | 2006-07-12 |
Family
ID=35320503
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004140503A Expired - Fee Related JP3795500B2 (ja) | 2004-05-11 | 2004-05-11 | リトロー型外部共振器半導体レーザーにおける光軸のずれの補正方法および装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7706425B2 (ja) |
EP (1) | EP1746693B1 (ja) |
JP (1) | JP3795500B2 (ja) |
AT (1) | ATE527729T1 (ja) |
WO (1) | WO2005109586A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012000437A1 (zh) * | 2010-06-30 | 2012-01-05 | 北京联想软件有限公司 | 一种光效设备及电子设备 |
JP5631692B2 (ja) * | 2010-10-22 | 2014-11-26 | ソニー株式会社 | 半導体レーザ装置組立体 |
CN103198167B (zh) * | 2012-01-04 | 2015-10-14 | 北京邮电大学 | 半导体量子点平衡组份的计算方法 |
JP6273089B2 (ja) * | 2012-12-27 | 2018-01-31 | ソニー株式会社 | レーザ射出装置及びレーザ射出装置の製造方法 |
US9876330B1 (en) * | 2017-01-30 | 2018-01-23 | Agilent Technologies, Inc. | Wavelength tunable external cavity quantum cascade laser utilizing an angle tuned immersion grating as a wavelength selective filter element |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05235453A (ja) | 1992-02-20 | 1993-09-10 | Nec Corp | エキシマレーザ装置 |
FR2724496B1 (fr) * | 1994-09-13 | 1996-12-20 | Photonetics | Source laser monomode accordable en longueur d'onde a cavite externe autoalignee |
US5771252A (en) * | 1996-01-29 | 1998-06-23 | Sdl, Inc. | External cavity, continuously tunable wavelength source |
JP3602664B2 (ja) | 1996-09-26 | 2004-12-15 | 財団法人電力中央研究所 | 波長可変レーザ光発生方法およびその装置 |
US6678291B2 (en) * | 1999-12-15 | 2004-01-13 | Lambda Physik Ag | Molecular fluorine laser |
JP2001077453A (ja) | 1999-09-07 | 2001-03-23 | Komatsu Ltd | 超狭帯域化レーザ装置 |
GB0007160D0 (en) * | 2000-03-25 | 2000-05-17 | Renishaw Plc | Wavelength tuning in external cavity lasers |
US7027469B2 (en) * | 2001-11-30 | 2006-04-11 | Optitune Plc | Tunable filter |
KR100444176B1 (ko) * | 2001-12-15 | 2004-08-09 | 한국전자통신연구원 | 전기 신호에 의해 동작되는 광 편향기 및 이를 이용한파장 가변형 외부 공진기 |
US6690690B2 (en) * | 2002-05-29 | 2004-02-10 | Lightgage, Inc. | Tunable laser system having an adjustable external cavity |
JP2004020337A (ja) * | 2002-06-14 | 2004-01-22 | Komatsu Ltd | 温度測定装置 |
US6775306B2 (en) * | 2002-09-30 | 2004-08-10 | J. Gilbert Tisue | Directly pivotable grating for agile laser tuners |
-
2004
- 2004-05-11 JP JP2004140503A patent/JP3795500B2/ja not_active Expired - Fee Related
-
2005
- 2005-04-22 EP EP05734437A patent/EP1746693B1/en not_active Expired - Fee Related
- 2005-04-22 AT AT05734437T patent/ATE527729T1/de active
- 2005-04-22 US US11/587,387 patent/US7706425B2/en not_active Expired - Fee Related
- 2005-04-22 WO PCT/JP2005/007675 patent/WO2005109586A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
JP2005322813A (ja) | 2005-11-17 |
US7706425B2 (en) | 2010-04-27 |
WO2005109586A1 (ja) | 2005-11-17 |
ATE527729T1 (de) | 2011-10-15 |
EP1746693A1 (en) | 2007-01-24 |
EP1746693A4 (en) | 2008-06-18 |
US20080031293A1 (en) | 2008-02-07 |
EP1746693B1 (en) | 2011-10-05 |
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