JP3788343B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly to a semiconductor device in which stress generated between two connected electronic elements and thermal stress are eliminated or relaxed and a method for manufacturing the same.
[0002]
[Prior art]
In recent years, the demand for higher density of semiconductor devices has increased along with the higher performance of electronic components. Therefore, QFP (Quad Flat Package) in which lead terminals are provided in the periphery of the package is widely used as a package structure of the semiconductor device, and recently, BGA (Ball Grid Array) in which solder ball terminals are provided on a surface lattice. By adopting, it is possible to further increase the number of pins and implement high-density mounting compared to QFP.
[0003]
Conventional packages have used wire bonding (WB) to connect the semiconductor chip and the carrier substrate. However, as the functionality of the device increases, it is difficult to cope with the increase in the number of pins and the size of the package. It has become. On the other hand, the flip chip connection (FCB) system in which the active surface of the semiconductor chip 101 shown in FIG. 18 is connected to the carrier substrate 106 by the solder bump 103 enables a high number of pins, miniaturization, and high-speed signal transmission. Therefore, it has begun to be used for various devices including high-performance device applications.
[0004]
While the above-mentioned solder bump connection and the increase in the number of pins due to the increase in the number of pins have progressed, the difference in thermal expansion coefficient between the organic resin substrate and the ceramic substrate, which are widely used as circuit boards in semiconductor devices, and the semiconductor elements. Due to the resulting thermal stress, cracks occur in the solder bumps 103 and 108, and the wiring of the carrier substrate 106 and the mounting substrate 110 is disconnected, resulting in a decrease in connection reliability.
On the other hand, there is a method of preventing the breakage of the solder bump 103 on the primary connection side, which is particularly fragile, by sealing the sealing resin 104 around the normal solder bump 103. The method of encapsulating the sealing resin 104 is effective in securing the connection reliability of the portion where the resin is encapsulated, but is mounted on a portion that is not easily protected by the sealing resin 104, such as a carrier substrate 106. If stress is applied to the solder bumps 108 on the secondary connection side with the substrate 110, the carrier substrate 106, and the mounting substrate 110, the electrical wiring may be disconnected, resulting in a decrease in connection reliability.
[0005]
Furthermore, recently, as the pitch of the electrode pads 107 and 109 between the carrier substrate 106 and the mounting substrate 110 is reduced, the connection reliability at the solder bumps 108 is a serious problem. If the sealing resin is sealed in this portion, the reliability is ensured, but on the other hand, repair becomes difficult and there are problems such as an increase in cost due to the resin sealing process, which is not desirable.
[0006]
In order to solve the above problems, there is a method of positively relaxing the stress by making the semiconductor device a stress relaxation structure. So far, semiconductor devices having several stress relaxation structures and methods for manufacturing the same have been proposed. Proposed.
[0007]
FIG. 19 shows a microelectronic element mounting structure described in Japanese Patent Laid-Open No. 10-256314. In this mounting structure, one end of an S-shaped lead 114 having a height in the vertical direction is fixed to a first element 111 such as a circuit board, and the tip of the other end of the lead 114 is fixed to a second element 117 such as a semiconductor wafer. It is attached to. An easily deformable insulating material that surrounds the lead 114 may be provided between the first element 111 and the second element 117.
[0008]
The lead 114 in this apparatus was manufactured as follows. First, as shown in FIG. 20A, a dumbbell-shaped resist 119 as shown in FIG. 21 is applied on the upper surface of the copper layer 118 on the first element 111. The pattern is a bulging portion 112 at the terminal side end portion, a bulging portion 113 at a slightly smaller circular tip end side end portion, and a narrow and narrow strip 120 that connects the bulging portions. Yes.
[0009]
Next, as shown in FIG. 20B, a nickel layer and a gold layer are formed by electroplating on the pattern portion to be the lead 114, and further, as shown in FIG. A new pattern 119 is formed on the exposed surface, and a bonding material 115 such as tin is formed by electroplating as shown in FIG.
[0010]
As shown in FIG. 20E, the resist 119 is removed, and under-etching is performed using the lead 114 of the nickel / gold layer as a barrier to dissolve a part of the copper layer 118. The processing time at this time is appropriately selected, as shown in FIG. 21, the undercut regions that have progressed from the side edge portions on both sides of the belt-shaped portion 120 are connected to each other, and the belt-shaped portion 120 is isolated from the insulating sheet, and Since the diameters of the bulging portions 112 and 113 are larger than the width of the belt-shaped portion 120, the bulging portions 112 and 113 are not completely dissolved by etching of the copper layer 118 and are weakly connected to the first element 111.
[0011]
In this state, the tip portion 115 of the lead 114 and the contact 116 of the second element 117 are connected by metal bonding, and the two elements 111 and 117 that are bonded are moved relative to each other so that the bulging portion 113 is moved to the first portion. Apart from one element, an S-shaped lead 114 is formed as shown in FIG.
[0012]
FIG. 22 shows a method for manufacturing the interconnecting portion 125 and the tip structure 124 using the sacrificial substrate 121 described in Japanese Patent Laid-Open No. 10-506238. This etches the sacrificial substrate 121, such as silicon, to form a trench 126. Subsequently, a hard layer 122 is deposited inside the trench 126 and on the surface of the sacrificial substrate 121. Further, patterning of the photoresist 123 and the like is then performed to enable selective deposition.
[0013]
A spring alloy layer 124 is formed on the opening by plating or the like, and the masking material 123 and the underlying layer 121 are removed. The interconnection element 125 is mounted on the tip structure 124 in advance and then connected to the electronic component, or is formed in advance on the electronic component side and cantilevered by soldering or soldering to the tip structure 124. Connect to.
[0014]
FIG. 23 shows a semiconductor device described in Japanese Patent Laid-Open No. 2000-323628. This is provided with one or more resin layers 129 on the passivation film 128 on the surface of the semiconductor element 127, and a conductor layer 131 having a desired shape connected to the semiconductor element electrode portion 130 inside or on the surface of the resin layer 129. ing. For the formation of the resin layer 129 on the passivation 128, a photolithography technique using a photosensitive resin, a screen printing method, a laser processing method, or the like is used.
[0015]
Further, as a semiconductor device structure similar to this device, an alloy that causes a martensitic phase transformation in a part of a wiring conductor path as shown in JP-A-2001-24021, JP-A-2000-323605, and JP-A-2000-323604 is used. There are known ones that are interposed, ones that use a porous resin, and ones that are provided with a material exhibiting thermal stress anisotropy in a resin layer.
[0016]
[Problems to be solved by the invention]
In order to relieve the thermal stress in this way, a semiconductor device having a stress relieving function and a method for manufacturing the same have been proposed, but one problem is the controllability of the shape of the conductor connection portion. In a general semiconductor package, the relative position of a semiconductor chip and a plastic substrate is shifted by about several tens of μm due to a difference in thermal expansion coefficient. In order to absorb such a large shift, it is necessary that the conductor connecting portion is deformed to allow the shift.
[0017]
In consideration of such a point, the method of forming the conductor connecting portion in a flat shape and performing it has an insufficient stress relaxation effect as compared with a method having a bent or curved structure. For this reason, in the connection method having no bent portion or curved portion, it becomes necessary to separately produce an element for relaxing the stress in order to provide an effect of stress relaxation.
[0018]
In addition, connecting a semiconductor chip having electrode pads arranged at a narrow pitch in an area array and a circuit board, and forming and connecting conductor connections in a batch is advantageous for increasing the density and cost of the package. . For this reason, in providing a stress relaxation structure, it is required that the conductor connection portions can be formed collectively at a narrow pitch.
[0019]
However, for example, in the method of manufacturing a connecting portion having spring properties with a wire core, not only is it difficult to form the connecting portions all at once, but it is also technically difficult to manufacture minute springs at a narrow pitch.
[0020]
On the other hand, with the method of forming a conductor connection portion and then deforming it, it is difficult to accurately control the shape of the conductive connection portion, and an additional burden is applied to the pad and the connection portion when deforming. May end up.
[0021]
Further, when under-etching is used in the manufacturing process, the etching time needs to be strictly controlled, and there are problems such as a limitation on the shape of the connection portion. In addition to this, when etching is used, there is a restriction that a difference in chemical properties must be provided between a material that becomes a sacrificial layer used when manufacturing the connection portion and a material that becomes the connection portion, Limitations on the combination of sacrificial layer and connection material. For example, the conductive connection portion may have a multi-layer structure so as to have a plurality of functions. However, when etching is performed, the selection range of the material is limited.
[0022]
On the other hand, in the method of producing the conductor part on the stress relaxation resin, part of the shape of the taper part is controlled at the time of resin formation. For example, when using photolithography technology or laser processing, conductor connection The shape of the part can be defined to some extent.
[0023]
However, this method requires photosensitive resin and desmear treatment. In addition, since a conductor layer is basically formed on a non-conductive resin, processes such as vapor deposition and sputtering are required. However, these film formation methods generally have a problem in step coverage to a stepped portion, and in particular, Depending on the taper angle, the connection reliability tends to be low. In addition, when the stress relaxation resin is formed before forming the conductive connection portion, there is a problem that the material is limited because a resin material that matches the manufacturing process of the conductive connection layer must be selected. .
[0024]
The present invention aims to solve the above problems.
[0025]
[Means for Solving the Problems]
In the present invention, in order to solve the above problems, a semiconductor device and a manufacturing method thereof are configured as follows.
[0026]
In a semiconductor device in which a semiconductor chip and electrode pads of a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealant is filled between the semiconductor chip and the circuit board, the conductive The connecting portion is made of an elastic material, and at least one of the conductive connecting portions includes two or more bent portions or curved portions when viewed from a direction parallel to the active surface of the semiconductor chip, and The semiconductor device, wherein the insulating sealant is made of an elastic material.
A processed substrate having predetermined irregularities on the surface is prepared, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities by using a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Is connected by the conductive connecting portion.
In this way, it is possible to form minute conductive connection parts with precisely controlled shapes by using a processed substrate whose surface is precisely micromachined and patterning technology, and it seems that terminals are arranged in a narrow pitch in the area array In addition, it is easy to form a deformable minute connecting portion. Note that the ease of shape control here means that the three-dimensional shape of the conductive connection part can be designed relatively freely, such as the bending angle in the bent shape and the radius of curvature in the bent shape. I mean. In particular, when a metal substrate is machined, the shape can be strictly controlled within a taper angle within an error of 1 degree and a radius of curvature within an error of 5 μm.
[0027]
Here, the bending means, for example, as shown in FIG. 24A, that a certain line is bent with a measurable angle α, β. On the other hand, “curved” means that a certain line does not have a clear angle as shown in FIG. 24B but has a bent shape. At this time, the radius of curvature of the curved portion is R.
[0028]
Furthermore, the shape of the conductor connecting portion is preferably a shape having a plurality of bent portions or curved portions. In the connection part of a semiconductor device, if those bent parts are bent at a right angle or less, the force concentrates on the bent part and the part is easily broken, so the part bent at a right angle or less as much as possible It is desirable that the shape does not have a bend, and the bending angle is desirably about 95 to 170 degrees. In particular, when the conductor connection part is bent at an angle of 120 degrees or less, it is necessary to devise measures to prevent stress from concentrating on the corner part, such as a curved shape having an appropriate radius of curvature. The curvature radius is preferably 20% or more with respect to the width or thickness of the conductor connecting portion.
The bending angle α of the bending portion and the curvature radius R of the bending portion are 120 degrees ≦ α ≦ 150 in consideration of high-density mounting and a burden on the corner portion of the conductor connection portion when thermal stress is applied to the conductor connection portion. The degree is best if 50% ≦ R ≦ 200%.
[0029]
This is superior in that it can form a connection part of a desired shape for the purpose of realizing stress relaxation and high-density mounting, and in particular, a complicated shape having four or more bent parts and curved parts. In the case of manufacturing the conductive connection portion, the shape control is much easier than in the conventional method. In addition, the conductive connecting portion can be bent and curved in both the height direction and the planar direction, and the three-dimensional thermal stress can be effectively absorbed by the conductive connecting portion alone.
[0030]
Further, in the present invention, since the bent and curved conductive connection portions can be connected and used as they are, no extra burden is placed on the pads of the semiconductor element or the circuit board or the connection portions themselves.
[0031]
Furthermore, when trying to produce a connecting part having a bent part or a curved part by a normal method, the manufacturing method becomes complicated and the number of steps increases, but in the method of the present invention, by using a processed substrate, A conductive connection part having a bent part or a curved part directly on a processed substrate can be produced, and the number of processes does not increase even when compared with a conventional manufacturing method.
[0032]
Furthermore, this manufacturing method deposits the conductive connection portion by plating or the like, and does not include an under-etching step when the conductive connection portion is manufactured. Therefore, there is no restriction on the shape of the conductive connection portion, the material can be freely selected, and a conductive connection portion having a multilayer structure can be easily manufactured.
[0033]
In addition, since the processed substrate can basically use a conductor such as a metal, the throwing power of the plating film to the portion with the step or taper is relatively good, without being greatly affected by the step or taper angle, A conductor connection can be formed.
[0034]
In addition, since the insulating elastic resin for sealing the conductor connection portion is applied and filled after the conductor connection portion is formed, the degree of freedom in selecting the resin material is higher than the method of supplying the resin in advance. Therefore, when selecting an insulating elastic resin, a commercially available low elastic modulus resin of 500 MPa or less can be easily applied.
[0035]
Furthermore, since the spring structure is formed collectively by the thin film forming method according to the present invention, it can be formed collectively even for a semiconductor device having a large number of terminals.
[0036]
As described above, in the present invention, a large number of minute and deformable conductive connection portions can be manufactured, and the connection reliability of a semiconductor device mounted at high density can be increased.
[0037]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of a semiconductor device and a manufacturing method thereof according to the present invention will be described.
[0038]
(First embodiment)
1A to 1I show a method for manufacturing a semiconductor device having terminals in an area array on a semiconductor chip. First, as shown in FIG. 1A, a processed substrate 1 having an uneven surface is produced. The processed substrate 1 is made of metal such as stainless steel, and as shown in FIG. 2, the groove 31 is processed in one direction when viewed from above. In the processed substrate 1, grooves, non-through holes, protrusions, and the like are formed at positions corresponding to the electrode pads of the semiconductor chip and the circuit board. Examples of the material of the processed substrate 1 include stainless steel, copper, nickel, aluminum, magnesium, iron, platinum, gold, and alloys thereof, silicon, organic resin materials, ceramics, and the like. In particular, a metal substrate is generally relatively easy to process uneven shapes, and in the process of forming a conductive connecting portion after that, a power supply layer for electrolytic plating is unnecessary, and the process of applying a power supply layer is not necessary. It is desirable because it can be shortened and the cost can be reduced. In the case of a non-conductive material, a conductive material or the like is formed on the surface.
[0039]
Next, a resist 2 is formed on the processed substrate 1 as shown in FIG. The resist 2 is formed by a method such as spin coating with a liquid photoresist or laminating with a dry film resist. Subsequently, as shown in FIG. 1C, patterning to become a conductor portion is performed by exposing and developing the resist 2.
The resist pattern is formed so that the conductive elastic body 3 has a bent portion and a curved portion. At this time, the larger the number of bent portions and curved portions, the easier it is to absorb thermal stress. Therefore, a resist pattern is formed on the processed substrate 1 so as to have at least two bent portions and curved portions. Further, it is more desirable if there are four or more bent portions and curved portions. FIG. 2 shows the conductive connection 3.
[0040]
Further, as shown in FIG. 1D, a metal layer that becomes the conductive connection portion 3 is formed by electrolytic plating. The conductive connection portion 3 can be produced by electroless plating, sputtering, vapor deposition, CVD, ion plating, or the like in addition to electrolytic plating, but electrolytic plating is desirable in consideration of ease of thickness and cost.
[0041]
The conductive connection part 3 has a layer structure of one or more conductive metals. As a metal layer used as the electroconductive connection part 3, nickel, iron, cobalt, platinum, rhodium, palladium, gold | metal | money, silver, copper, aluminum etc. and the alloy which has them as a main component are mentioned. In view of mechanical strength, electrical characteristics, and cost, it is desirable to have a configuration mainly composed of Ni and Cu. Furthermore, when the top surface layer of the conductive connection part 3 is surface-treated with Au in the formation process of the conductive connection part 3, Au / Au is connected in the process of connecting the conductive connection part 3 to a semiconductor chip 4 to be described later. Thermocompression bonding and soldering are easy.
[0042]
After the conductive connection portion 3 is formed, the resist is removed with an organic solvent or the like as shown in FIG. 1 (e), and the contact which is one end of the conductive connection portion 3 as shown in FIG. 1 (f). The terminal portion is connected to the electrode pad 5 of the semiconductor chip 4. The connection is performed so that the conductive connection portion 3 is transferred as it is.
Before connection, a metal bump 6 such as Au or SnPb, SnAg, SnCu, SnAgCu, SnBi, SnZn, SnZnBi, SnIn, or an alloy containing them as a main component is prepared on the electrode pad 5 of the semiconductor chip 4 in advance. deep. The conductive connection portion 3 is connected to the metal bump 6. As a method for forming the metal bumps 6, stud bumps, electroless plating, electrolytic plating, ball transfer, printing, or the like can be considered.
[0043]
Next, the processed substrate 1 is removed as shown in FIG. 1 (g), and the other end of the conductive connection 3 is connected to the electrode pad 8 on the circuit substrate 7 and the conductive metal as shown in FIG. 1 (h). Connect with bump 9. It is desirable and convenient to supply solder balls or paste on the electrode pads 8 on the circuit board 7 and perform connection by reflow.
[0044]
Finally, an insulating resin 10 is filled between the semiconductor chip 4 and the circuit board 7 as shown in FIG. As the insulating resin 10 to be filled, for example, epoxy, acrylic, polyimide, urethane, polyester, bismalimide, styrene, polyvinyl chloride, nylon, polyethylene, polypropylene, acid anhydride, etc. Organic insulating resin, silicone resin, fluorosilicone resin organic / inorganic composite insulating resin, and the like. A resin having a low elastic modulus of 500 MPa or less is desirable, but a material higher than that may be used.
[0045]
Thereby, the conductive connection part 3 having an arbitrary shape can be formed, and the conductive connection part 3 can be reliably provided between the semiconductor chip 4 and the circuit board 7 without applying a force for bending or the like.
[0046]
(Second Embodiment)
3A to 3I show a method of manufacturing a semiconductor device having a conductive connection portion 3 in a peripheral shape on a semiconductor chip as shown in FIG.
[0047]
The conductive connection portion 3 is substantially the same in manufacturing method, except that the shape and arrangement location are different from those of the first embodiment. In this way, a semiconductor device having the conductive connection portion 3 in a peripheral shape may be manufactured.
[0048]
(Third embodiment)
5A to 5D show a third method for manufacturing a semiconductor device.
[0049]
1 and FIG. 3 is different from the method of manufacturing the semiconductor device of FIG. 1 and FIG. 3 in that the conductive connection part 3 is formed on the processed substrate 1 as shown in FIG. 1 (a) to (e) and FIG. 3 (a) to (e). Although it is the same until the fabrication, the conductive connecting portion 3 is not connected (transferred) to the semiconductor chip 4 but is connected to the circuit board 7 as shown in FIG. Yes. Before connection, metal bumps 9 such as Au, SnPb, SnAg, SnCu, SnAgCu, SnBi, SnZn, SnZnBi, SnIn, or an alloy containing them as a main component are prepared on the electrode pads 8 of the circuit board 7 in advance. The same is true.
Subsequently, as shown in FIG. 5B, the processed substrate 1 is removed physically or by etching. Thereafter, as shown in FIG. 5C, the electrode pads 5 of the semiconductor chip 4 and the conductive connection portions 3 transferred to the circuit board 7 are connected. Prior to connection, metal bumps 6 such as Au, SnPb, SnAg, SnCu, SnAgCu, SnBi, SnZn, SnZnBi, SnIn, or an alloy containing them as a main component are prepared on the electrode pads 5 of the semiconductor chip 4 in advance. . The bump forming method is also the same as in the above embodiment. Finally, as shown in FIG. 5D, an insulating resin 10 is sealed between the semiconductor chip 4 and the circuit board 7.
[0050]
(Fourth embodiment)
6A to 6E show another method for manufacturing the semiconductor device of the present invention.
[0051]
In this manufacturing method, first, the conductive connection part 3 is formed on the processed substrate 1 as shown in FIGS. 1A to 1E or FIGS. 3A to 3E, and then the process shown in FIG. As shown in the drawing, an insulating resin is filled on the processed substrate 1, the periphery of the conductive connection portion 3 is covered with the insulating sealing portion 10, and the surface is polished to expose the uppermost surface of the conductive connection portion 3. Let Thereafter, as shown in FIG. 6B, the connection is made on the electrode pad 5 of the semiconductor chip 4. Prior to connection, metal bumps 6 such as Au, SnPb, SnAg, SnCu, SnAgCu, SnBi, SnZn, SnZnBi, SnIn, or an alloy containing them as a main component are prepared on the electrode pads 5 of the semiconductor chip 4 in advance. . The bump is formed in the same manner as in the above example.
[0052]
Subsequently, the processed substrate is removed physically or by etching as shown in FIG. 6C, and Au or SnPb formed on the electrode pad 8 of the circuit board 7 as shown in FIG. It is connected to metal bumps 9 such as SnAg, SnCu, SnAgCu, SnBi, SnZn, SnZnBi, SnIn, or an alloy containing them as a main component. Finally, as shown in FIG. 6E, the insulating sealing portion 10 is formed with respect to the gap.
[0053]
(Fifth embodiment)
7A to 7E show another manufacturing method. This manufacturing method is similar to the manufacturing method shown in FIG. 6, but the step of covering the periphery of the conductive connection portion 3 with the insulating sealing portion 10 transfers the conductive connection portion 3 to the semiconductor chip 4. The difference is that it is a subsequent process.
[0054]
First, the conductive connecting portion 3 is transferred to the semiconductor chip 4 as shown in FIG. 7A, and the processed substrate 1 is removed as shown in FIG. 7B. Thereafter, as shown in FIG. 7C, the outermost surface of the conductive connection portion 3 is exposed by coating the periphery of the conductive connection portion 3 with resin and polishing the surface. Further, as shown in FIG. 7 (d), connection is made to metal bumps 9 formed on the electrode pads 8 of the circuit board 7. Finally, as shown in FIG. 7E, the insulating sealing portion 10 is sealed in the gap.
[0055]
(Sixth embodiment)
FIGS. 8A to 8F show a manufacturing method in the case where a non-conductive material is used as the material of the processed substrate.
In this example, a non-conductive material such as silicon, an organic resin substrate, or ceramics is used for the substrate as the material of the processed substrate 1. The non-conductive material may be any material that can be subjected to surface treatment such as sputtering or electroless plating for imparting conductivity.
[0056]
First, as shown in FIG. 8A, a conductive layer 11 is formed on a processed substrate 1 by thin film forming means such as sputtering, vacuum deposition, electroless plating, CVD, ion plating or the like. Next, a resist 2 is formed on the processed substrate 1 as shown in FIG. Subsequently, as shown in FIG. 8C, the conductor portion is patterned by exposure and development of the resist 2, and further, a metal layer to be the conductive connection portion 3 is formed by electrolytic plating as shown in FIG. 8D. Do. The conductive metal formed as the conductive connection portion 3 has a layer configuration of at least one layer.
[0057]
As a metal layer used as the electroconductive connection part 3, nickel, iron, cobalt, platinum, rhodium, palladium, gold | metal | money, silver, copper, aluminum etc. and the alloy which has them as a main component are mentioned. In view of mechanical strength, electrical characteristics, and cost, it is desirable to have a configuration mainly composed of Ni or Cu. In the case where Au / Au thermocompression bonding or solder bonding is performed in the subsequent process of transferring the conductive connection part 3 to the semiconductor chip, the uppermost layer of the conductive connection part 3 is made of Au in the conductive connection part forming process. If it is processed, it is easy to handle.
[0058]
After the conductive connection portion 3 is formed, the resist is removed with an organic solvent or the like as shown in FIG. After the resist removal, as shown in FIG. 8F, the unnecessary conductive layer 11 is removed by etching. The conductive connecting part 3 thus produced can be used in any of the manufacturing methods shown in FIGS. 1, 3, 5, 6, and 7.
[0059]
(Seventh embodiment)
In the manufacturing method of FIGS. 1, 3, 5, 6, and 7, not only electrolytic plating but also sputtering, vacuum deposition, electroless plating, ion plating, CVD, etc. are used for forming the conductive connection portion 3. It is also possible to produce it. When performing electroplating, it is indispensable that the processed substrate 1 has conductivity. However, when using a film formation method other than electroplating, film formation is possible even if the substrate does not have conductivity. . Accordingly, substrate materials such as silicon, organic resin materials, and ceramics can also be used. In the case where the film is formed on the entire surface of the substrate as in the case of sputtering, the conductive connection portion 3 is formed using a lift-off method.
[0060]
(Eighth embodiment)
As a manufacturing method of the processed substrate 1 for manufacturing the conductive connection portion, cutting with a drill or blade, grinding with a grindstone, polishing, or the like can be considered. As the groove processing of the substrate 12, processing with the grindstone 13 is good considering the controllability and accuracy of the groove shape as shown in FIG. By changing the shape of the grindstone, it is possible to precisely control the taper angle within 1 degree and the radius of curvature of the corner within 5 μm.
[0061]
Since the processed shape produced at this time becomes the shape of the completed conductive connection portion 3, the desired shape of the conductive connection portion can be produced by controlling this shape. The conductive connection portion has a shape including a bent portion or a curved portion, but the recessed portion on the processed substrate may have a particularly thin plating film thickness. The taper angle α and the curvature radius R of the cross-sectional shape of the groove shown in FIG. 9C are important. If the values of α and R are too small, it is likely to cause breakage of the conductive connection part when stress is applied. Therefore, when considering the stress, α is 95 degrees or more, and R is the thickness of the conductive connection part to be formed thereafter. It is desirable that it is as large as possible with 20% or more of the smaller value. However, on the other hand, if the values of α and R are too large, the pitch of the grooves increases, making it difficult to narrow the pitch and making it unsuitable for high-density mounting. Therefore, the optimum value is that α is 120 ° to 150 °, and R is 50% to 200% of the smaller one of the thickness and width of the conductive connection portion.
[0062]
(Ninth embodiment)
Etching, laser machining, sculpture electric discharge machining, and wire electric discharge machining are conceivable as methods that allow relatively easy hole machining and groove machining. As shown in FIG. 10A, it is also conceivable that a portion not to be processed is covered with a resist 14 and half etching is performed on the substrate 12. When silicon is used as the substrate 12, anisotropic etching of silicon can be used as a precise processed substrate manufacturing method. A resist pattern having a desired processed shape is formed on the silicon oxide film, and the silicon oxide film in the pattern portion is removed with hydrofluoric acid. Then, as shown in FIG. 10B, anisotropic etching is performed on the substrate 12 with an alkali etchant using the remaining silicon oxide film 15 other than the pattern as a protective layer. According to this method, the depth of a groove or a hole can be controlled by the etching time, and both a groove shape and a hole shape can be produced.
[0063]
(Tenth embodiment)
FIGS. 11A to 11D show examples in which the conductive connection portion 3 is manufactured in various shapes when viewed from a direction parallel to the active surface of the semiconductor chip.
[0064]
FIG. 11A shows a semiconductor device in which the conductive connection portions 3 are produced mainly in the shape of curved portions and arranged in an area array. An example of the structure of the processed substrate 1 and the resist pattern of the conductive connection portion 3 used at this time is shown in FIG.
[0065]
FIG. 11B shows a semiconductor device in which the conductive connection portion 3 is formed in a simple shape having only two bent portions or two bent portions and arranged in an area array. An example of the structure of the processed substrate 1 and the resist pattern of the conductive connection portion 3 used at this time is shown in FIGS.
[0066]
FIG. 11C shows a semiconductor device in which the conductive connection portions 3 are formed in a spiral shape and arranged in an area array. An example of the structure of the processed substrate 1 used at this time and the resist pattern of the conductive connection portion 3 are shown in FIG.
[0067]
FIG. 11D shows a semiconductor device in which the shape of the conductive connecting portion 3 is formed in a simple shape having only two bent portions or two bent portions and arranged with peripherals. An example of the structure of the processed substrate 1 and the resist pattern of the conductive connection portion 3 used at this time is shown in FIG.
[0068]
The relationship between the processing groove and processing hole of the processed substrate 1 and the position of the terminal of the conductive connection portion 3 is basically that one end is located on the uppermost surface of the processed substrate and the other end is located on the lowermost surface of the processed substrate. Yes. If the height positions of the two are different, there is no problem in manufacturing, but this arrangement is the most efficient. One end of the conductive connection portion 3 corresponds to the electrode pad position of the semiconductor chip, and the other end corresponds to the electrode pad position of the circuit board. It is a condition that the wiring connecting both terminals does not come into contact with other wiring or terminals.
[0069]
(Eleventh embodiment)
13A to 13G are views when the semiconductor device is viewed from the direction perpendicular to the active surface of the semiconductor chip 4. The shape and direction of the conductive connection portion 3 can be arbitrarily formed on the semiconductor device by a resist pattern.
[0070]
FIG. 13A shows a semiconductor device in which the conductive connection portion 3 has a linear shape. When the conductive connection portion 3 according to the present invention is used, it is most suitable for high-density mounting.
[0071]
FIGS. 13B and 13C show a semiconductor device in which the conductive connection portion 3 is U-shaped and Z-shaped, respectively. By making the shape of the conductive connection part 3 a structure having one or more bent parts and curved parts, it is possible to increase the degree of freedom compared to the linear shape, and to provide a large stress relaxation effect. Is possible. In these shapes, the conductive connection portion is bent or curved in both the planar direction and the vertical direction with respect to the active surface of the semiconductor chip, and is particularly effective for stress generated three-dimensionally.
[0072]
FIG. 13D shows a semiconductor device in which the conductive connection portions 3 are installed in a direction extending in a radial direction with respect to the center of the semiconductor chip 4, and all the connection terminals 5 of the semiconductor chip 4 are connected to the area array. Existing. Usually, the thermal stress is generated due to the difference in the thermal expansion coefficient between the semiconductor chip 4 and the circuit board 7, but the influence of the difference in the thermal expansion coefficient increases as the distance from the center position of the semiconductor chip 4 increases. The direction substantially coincides with a straight line connecting the center of the semiconductor chip 4 and the position of the electrode pad 5.
[0073]
Therefore, as shown in FIG. 13D, the structure in which the conductive elastic body 3 is arranged so as to be deformed in a linear direction connecting the center of the semiconductor chip 4 and each electrode pad 5 is most desirable. At this time, the conductive connection portion 3 is located at a position farther from the center portion of the semiconductor chip, and the conductive connection portion 3 is longer than the conductive connection portion 3 at a position closer to the center portion of the semiconductor chip. Longer is more desirable. Further, in this case, a greater effect can be obtained by changing the shape of the conductive connecting portion 3 from a linear shape to a bent or curved shape as shown in FIG. When the electrode pads are not uniformly present on the semiconductor chip 4, the conductive connection is made so that the center of gravity when all the electrode pads of the semiconductor chip 4 are made to be uniform mass points and elastically deformed in the linear direction connecting the electrode pads. It may be desirable to install part 3.
[0074]
On the other hand, when the connection pad 5 of the semiconductor chip 4 has a terminal on the peripheral, as shown in FIG. 13 (f), the semiconductor device in which the conductive connection portion 3 is bent and curved at two locations, FIG. 13 (g) As shown in FIG. 2, a semiconductor device in which the conductive connection portion 3 is linear is conceivable.
[0075]
Even when the conductive connection portion 3 is viewed from a direction perpendicular to the active surface of the semiconductor device, if there is a corner portion, it is easy to break when a mechanical force is applied. It is desirable to avoid and avoid the curved shape. Further, the conductive connection portions 3 in FIGS. 13 (f) and 13 (g) may be installed to extend radially for the same reason as in FIG. 13 (d).
[0076]
The shape of the plurality of conductive connection portions 3 existing in the semiconductor device can be changed by changing the mask pattern when viewed from the direction perpendicular to the active surface of the semiconductor chip 4. It is also possible to make the directions in which they are partly or completely different from each other.
[0077]
(Twelfth embodiment)
FIGS. 14A and 14B are views when the semiconductor device is viewed from the plane direction with respect to the active surface of the semiconductor chip 1. FIG. 14A shows a semiconductor device in which the conductive connection portion 3 extends in the outer peripheral direction from the center portion of the semiconductor chip. FIG. 14B shows a semiconductor device in which the conductive connection portions 3 extend in alternate directions.
[0078]
Thus, by changing the direction of the conductive connection part 3 for each electrode pad, the arrangement of the pads can be made free and the overall balance of the conductive connection part 3 supporting the semiconductor chip can be improved.
[0079]
In addition, the shape of the conductive connection part in the semiconductor device is set or changed by changing the processing shape or mask pattern of the processing substrate 1 when viewed from the plane direction with respect to the active surface of the semiconductor chip. The directions can be partially or completely different from each other.
[0080]
(Thirteenth embodiment)
15A to 15C show other structures of the semiconductor device. As shown in these drawings, when viewed from a direction parallel to the active surface of the semiconductor chip, the conductive connection portion 3 installed on the electrode pad 5 of the semiconductor chip 4 is connected to the electrode pad 8 of the circuit board 7. There are two or more connections.
[0081]
FIG. 15A shows a semiconductor device in which the connection part of the circuit board 7 to the electrode pad 8 is two points, and FIG. 15B shows a semiconductor device in which the connection part of the circuit board 7 to the electrode pad 8 is three points. . By increasing the number of legs of the conductive connection portion 3, it is possible to reduce the burden on the individual conductive connection portions 3 that support the semiconductor chip 4.
[0082]
On the other hand, FIG. 15C shows a semiconductor device having two connection portions to the circuit board 7. In this semiconductor device, the conductive connecting portion 3 is mechanically connected to the circuit board 7 at two points, but the electrode pad 5 of the semiconductor chip 4 and the electrode pad 8 of the circuit board 7 are electrically 1 Connected with a book. One end of the other conductive connection portion 3 that is not electrically connected is fixed to the circuit board 7 by an adhesive 18. The adhesive 18 may be any adhesive that can connect the circuit board 7 and the conductive connection portion 3. The structure of this semiconductor device has the effect of reducing the mechanical burden on the conductive connection 3 in a state where the electrode pad 5 of the semiconductor chip 4 and the electrode pad of the circuit board 7 are connected by one conductive connection 3. There is.
[0083]
(Fourteenth embodiment)
FIG. 16 shows a semiconductor device using both the conductive connecting portion 3 and solder bumps. In this structure, a solder bump 19 capable of high-density mounting is used at the central portion of the semiconductor chip 4 where the influence of stress is relatively small, and the conductive connection portion 3 according to the present invention is used at the outer peripheral portion where stress is easily applied. Yes. In this semiconductor device, both high-density mounting and stress relaxation can be realized. The solder bump 19 can be replaced with a stud bump or a plating bump.
[0084]
(Fifteenth embodiment)
FIGS. 17A to 17C are diagrams illustrating the layer structure of the conductive connection portion 3. As shown in FIG. 17 (a), the conductive connecting portion 3 has a single-layer structure made of one kind of metal 20, as well as metal 21, metal 20 and metal 21 as shown in FIGS. 17 (b) and 17 (c). A layer structure or a structure of two or more layers of the metal 22, the metal 20, and the metal 21 may be used. The metal here may be an alloy. Specifically, a layer structure of Cu / Au, Ni / Au, Au / Ni / Au, Cu / Ni / Au, Cu / Ni / Cu, etc. can be considered.
[0085]
(Sixteenth embodiment)
The peelability of the processed substrate 1 and the conductive connection portion 3 differs depending on the material of both. Depending on the combination, peeling may be difficult. In that case, a release layer is used. Thus, it is desirable to peel off the processed substrate 1 and the conductive connection portion 3. As the release layer, fluororesin such as PTFE (tetrafluoroethylene resin), PFA (tetrafluoroethylene / perfluoroalkoxyethylene copolymer resin), FEP (tetrafluoroethylene / hexafluoropropylene copolymer) Resin), an electroless Ni plating film containing these particles dispersedly, or a material mainly composed of graphite, boron nitride, and aluminum. In addition, metals and alloys that can be easily separated from the base metal and the conductive elastic body 3 can also be used as the release layer.
[0086]
The release layer is formed in advance on the processed substrate 1 to facilitate peeling of the conductive connection portion 3. When the release layer is a conductive material such as metal, graphite, or a metal film in which a release agent is dispersed, the conductive connection portion 3 can be formed directly on the release layer. On the other hand, when a non-conductive release agent made of a fluororesin material or the like is used for the release layer, sputtering or non-conductive release layer is first formed on the non-conductive release layer on the substrate, as in the manufacturing method shown in FIG. After the power feeding layer is formed by electroless plating, vapor deposition, CVD, ion plating, or the like, the conductive connection portion 3 is formed. The conductive connection part 3 produced in this way can be used in any of the manufacturing methods shown in FIGS. 1, 3, 5, 6, and 7.
[0087]
【The invention's effect】
In the semiconductor device and the manufacturing method thereof according to the present invention, since the conductive connection portion having the bent portion and the curved portion and the insulating sealing portion are used for connecting the semiconductor chip and the circuit board, the thermal stress is flexibly relaxed. It is possible to suppress a decrease in connection reliability due to stress concentration on the bumps.
[0088]
According to the manufacturing method of the present invention, by using a processed substrate, a conductive connection portion having a relatively free shape in three dimensions can be formed by a simple process. In addition, since fine conductive connection parts can be formed in a large area with a narrow pitch by precision patterning technology using photolithography, etc., high-reliability connection can be realized even in high-density mounting, and mass production is also excellent. Yes.
[0089]
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a method for manufacturing a semiconductor device according to a first embodiment of the present invention.
FIG. 2 is a view showing a processed substrate used in the first embodiment of the present invention.
FIG. 3 is a diagram illustrating a method for manufacturing a semiconductor device according to a second embodiment of the present invention.
FIG. 4 is a cross-sectional view of a processed substrate used in a second embodiment of the present invention.
FIG. 5 is a diagram showing a manufacturing method according to a third embodiment of the present invention.
FIG. 6 is a diagram showing a manufacturing method according to a fourth embodiment of the present invention.
FIG. 7 is a diagram showing a manufacturing method according to a fifth embodiment of the present invention.
FIG. 8 is a diagram showing a manufacturing method according to a sixth embodiment of the present invention.
FIG. 9 is a diagram showing substrate processing according to an eighth embodiment of the present invention.
FIG. 10 is a diagram showing substrate processing according to a ninth embodiment of the present invention.
FIG. 11 is a diagram showing a semiconductor device according to a tenth embodiment of the present invention.
FIG. 12 is a view showing a processed substrate used for manufacturing a semiconductor device according to a tenth embodiment of the present invention.
FIG. 13 is a diagram showing a semiconductor device according to an eleventh embodiment of the present invention.
FIG. 14 is a diagram showing a semiconductor device according to a twelfth embodiment of the present invention.
FIG. 15 is a diagram illustrating a semiconductor device according to a thirteenth embodiment of the present invention.
FIG. 16 is a diagram showing a semiconductor device according to a fourteenth embodiment of the present invention.
FIG. 17 is a view showing a structure of a conductive connection part according to a fifteenth embodiment of the present invention.
FIG. 18 shows an embodiment according to the prior art.
FIG. 19 shows an embodiment according to the prior art.
FIG. 20 shows an embodiment according to the prior art.
FIG. 21 shows an embodiment according to the prior art.
FIG. 22 shows an embodiment according to the prior art.
FIG. 23 shows an embodiment according to the prior art.
FIG. 24 is a schematic diagram showing a bent shape and a curved shape.
[Explanation of symbols]
1 Processing substrate
2 resist
3 Conductive connections
4 Semiconductor chip
5 Electrode pads on the semiconductor chip
6 Metal bumps on the semiconductor chip
7 Circuit board
8 Electrode pads on the circuit board
9 Metal bumps on the circuit board
10 Insulating sealing part
11 Metal film
12 Substrate
13 Whetstone
14 resist
15 Silicon oxide film
16 electrode pads
17 Solder bump
18 Bonding agent
19 Solder bump
20 Metal film A
21 Metal film B
22 Metal film C
101 Semiconductor device
102 Electrode pad
103 Solder bump
104 Sealing resin
105 electrode pad
106 Carrier substrate
107 electrode pads
108 Solder bump
109 electrode pad
110 Mounting board
111 1st element
112 bulge
113 bulge
114 leads
115 Tip
116 contacts
117 second element
118 Metal layer
119 resist
120 Band
121 Sacrificial substrate
122 Metal layer
123 resist
124 Tip structure
125 interconnect elements
126 trench
127 Semiconductor device
128 Passivation film
129 First resin layer
130 Electrode section
131 Conductor layer
132 Bump
133 2nd resin layer

Claims (42)

In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having predetermined irregularities on the surface is manufactured, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities with a metal film, and an insulating member is provided on the processed substrate. Covering the conductive connecting portion with the insulating member, polishing a part of the insulating member to expose one end of the conductive connecting portion, and exposing one end of the exposed conductive connecting portion to a semiconductor chip; Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device, wherein an insulating resin is sealed between the semiconductor chip and the circuit board. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having a predetermined unevenness on the surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, the conductive substrate is connected to one of the electrode pads of the circuit board, the processed substrate is removed from the conductive connection portion, and an insulating member is provided on the semiconductor chip or the circuit board to insulate the conductive connection portion. Covering the insulating member, polishing a part of the insulating member to expose the other end of the conductive connecting portion, and exposing the other end of the conductive connecting portion to either a circuit board or a semiconductor chip. A method for manufacturing a semiconductor device, comprising: connecting an electrode pad and encapsulating an insulating resin between the semiconductor chip and the circuit board.   The method of manufacturing a semiconductor device according to claim 1, wherein the processed substrate is made of metal.   The method of manufacturing a semiconductor device according to claim 1, wherein the processed substrate is formed by using at least one of cutting, grinding, and polishing.   3. The method of manufacturing a semiconductor device according to claim 1, wherein the processed substrate uses at least one of laser processing, sculpting electric discharge processing, and wire electric discharge processing.   3. The method of manufacturing a semiconductor device according to claim 1, wherein the processed substrate is a resin substrate, a ceramic substrate, or a metal substrate replicated from a master mold.   The method of manufacturing a semiconductor device according to claim 1, wherein the processed substrate has a release layer at least at an interface with the conductive connection portion.   The radius of curvature of the cross-sectional shape of the groove, non-through hole, or protrusion provided on the processed substrate is 20% or more of the thickness or width of the conductive connection portion to be formed thereafter. Item 3. A method for manufacturing a semiconductor device according to Item 1 or 2.   Au plating treatment is performed on the surface of the conductive connection portion formed on the processed substrate, Au stud bumps, electroless Ni / Au plating bumps, electrolytic Au plating bumps on the electrode pads of the semiconductor chip or the circuit board, 3. The method of manufacturing a semiconductor device according to claim 1, wherein one of Ni / Au plated bumps is formed and the two are connected by thermocompression bonding of Au / Au.   3. The method of manufacturing a semiconductor device according to claim 1, wherein the surface of one or both of the semiconductor chip and the circuit board is processed by electroless Au plating. 4.   Main component of any one of SnPb, SnAg, SnCu, SnAgCu, SnBi, SnZn, SnZnBi, and SnIn on the circuit board for connecting to the semiconductor chip or on the electrode pad of the semiconductor chip for connecting to the circuit board By supplying the solder and reflowing, the end of the conductive connection portion that is not connected to the semiconductor chip or the circuit board is connected to the circuit board or the semiconductor chip. The method for manufacturing a semiconductor device according to claim 1, wherein: A processed substrate having a predetermined unevenness on the surface is produced, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
The method for manufacturing a semiconductor device, wherein the processed substrate is made of metal. A processed substrate having a predetermined unevenness on the surface is produced, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
The method of manufacturing a semiconductor device, wherein the processed substrate is formed using at least one of cutting, grinding, and polishing. A processed substrate having predetermined irregularities on the surface is prepared, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities by using a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
A method of manufacturing a semiconductor device, wherein the processed substrate uses at least one of laser processing, sculpting electric discharge processing, and wire electric discharge processing. A processed substrate having predetermined irregularities on the surface is prepared, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities by using a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
The method of manufacturing a semiconductor device, wherein the processed substrate is a resin substrate, a ceramic substrate, or a metal substrate replicated from a master mold. A processed substrate having a predetermined unevenness on the surface is produced, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
The process substrate includes a release layer at least at an interface with the conductive connection portion. A processed substrate having a predetermined unevenness on the surface is produced, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
A semiconductor device characterized in that a radius of curvature of a cross-sectional shape of a groove, a non-through hole, or a protrusion provided on the processed substrate is 20% or more of a thickness or a width of a conductive connection portion to be formed thereafter. Device manufacturing method. A processed substrate having predetermined irregularities on the surface is prepared, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities by using a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
Au plating treatment is performed on the surface of the conductive connection portion formed on the processed substrate, Au stud bumps, electroless Ni / Au plating bumps, electrolytic Au plating bumps on the electrode pads of the semiconductor chip or the circuit board, One of the Ni / Au plating bumps is formed, and the both are connected by Au / Au thermocompression bonding. A processed substrate having predetermined irregularities on the surface is prepared, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities by using a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
A method of manufacturing a semiconductor device, wherein the surface of one or both of the semiconductor chip and the circuit board is processed by electroless Au plating. A processed substrate having a predetermined unevenness on the surface is produced, and a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is formed on one side And connecting the other end of the conductive connection part to the other electrode part, and connecting the one electrode part and the other electrode part to each other. Are connected by the conductive connection part,
Main component of any one of SnPb, SnAg, SnCu, SnAgCu, SnBi, SnZn, SnZnBi, and SnIn on the circuit board for connecting to the semiconductor chip or on the electrode pad of the semiconductor chip for connecting to the circuit board By supplying the solder and reflowing, the end of the conductive connection portion that is not connected to the semiconductor chip or the circuit board is connected to the circuit board or the semiconductor chip. A method for manufacturing a semiconductor device. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having predetermined irregularities on a surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
The method for manufacturing a semiconductor device, wherein the processed substrate is made of metal. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having a predetermined unevenness on the surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
The method of manufacturing a semiconductor device, wherein the processed substrate is formed using at least one of cutting, grinding, and polishing. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having a predetermined unevenness on the surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
A method of manufacturing a semiconductor device, wherein the processed substrate uses at least one of laser processing, sculpting electric discharge processing, and wire electric discharge processing. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having a predetermined unevenness on the surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
The method of manufacturing a semiconductor device, wherein the processed substrate is a resin substrate, a ceramic substrate, or a metal substrate replicated from a master mold. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having a predetermined unevenness on the surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
The process substrate includes a release layer at least at an interface with the conductive connection portion. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having predetermined irregularities on a surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
A semiconductor device characterized in that a radius of curvature of a cross-sectional shape of a groove, a non-through hole, or a protrusion provided on the processed substrate is 20% or more of a thickness or a width of a conductive connection portion to be formed thereafter. Device manufacturing method. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having a predetermined unevenness on the surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
Au plating treatment is performed on the surface of the conductive connection portion formed on the processed substrate, Au stud bumps, electroless Ni / Au plating bumps, electrolytic Au plating bumps on the electrode pads of the semiconductor chip or the circuit board, One of the Ni / Au plating bumps is formed, and the both are connected by Au / Au thermocompression bonding. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having a predetermined unevenness on the surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the unevenness with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
A method of manufacturing a semiconductor device, wherein the surface of one or both of the semiconductor chip and the circuit board is processed by electroless Au plating. In a method for manufacturing a semiconductor device in which an elastically deformable conductive connecting portion is provided between a semiconductor chip and a circuit board and both are connected,
A processed substrate having predetermined irregularities on a surface is produced, a conductive connection portion having a predetermined shape is formed on the surface of the processed substrate along the irregularities with a metal film, and one end of the conductive connection portion is a semiconductor chip, Alternatively, it is connected to one of the electrode pads on the circuit board, the processed substrate is removed from the conductive connection portion, and the other end of the conductive connection portion is connected to one of the electrode pads on the circuit board or the semiconductor chip. A method of manufacturing a semiconductor device in which an insulating resin is sealed between the semiconductor chip and the circuit board,
Main component of any one of SnPb, SnAg, SnCu, SnAgCu, SnBi, SnZn, SnZnBi, and SnIn on the circuit board for connecting to the semiconductor chip or on the electrode pad of the semiconductor chip for connecting to the circuit board By supplying the solder and reflowing, the end of the conductive connection portion that is not connected to the semiconductor chip or the circuit board is connected to the circuit board or the semiconductor chip. A method for manufacturing a semiconductor device. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connection portion is made of an elastic material, and when at least one of the conductive connection portions is viewed from a direction parallel to the active surface of the semiconductor chip, two or more bent portions or curved portions are formed. wherein, and wherein the insulating sealing agent upper portion of the conductive connection portion, the lower, provided between the chip and the circuit board so as to surround the side surfaces, and Ri Do from an elastic material with low elasticity, low modulus elastomeric material the semiconductor device modulus of the insulating sealing agent, characterized in der Rukoto below 500MPa is. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connecting portion is made of an elastic material, and includes at least four bent portions or curved portions when at least one of the conductive connecting portions is viewed from a direction parallel to the active surface of the semiconductor chip. and the insulative sealant top of electrically conductive connection, the lower, provided between the chip and the circuit board so as to surround the side surfaces, and Ri Do from an elastic material with low elasticity, low modulus elastic material the semiconductor device modulus of a said insulating sealing agent, characterized in der Rukoto below 500 MPa. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connection portion is made of an elastic material, and at least one of the conductive connection portions is 2 or more when viewed from a direction parallel to the active surface of the semiconductor chip, and 1 or more when viewed from a vertical direction. The insulating sealant is provided between the chip and the circuit board so as to surround the upper, lower and side surfaces of the conductive connecting portion, and is made of a low elastic elastic material. Ah is, the semiconductor device modulus of the insulating sealant is an elastic material having a low elasticity, characterized in der Rukoto below 500 MPa. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connection portion is made of an elastic material, and when at least one of the conductive connection portions is viewed from a direction parallel to the active surface of the semiconductor chip, two or more bent portions or curved portions are formed. And the insulating sealant is made of an elastic material,
When the conductive connection portion is viewed from a direction perpendicular to the active surface of the semiconductor chip, the conductive connection portion located away from the center portion of the semiconductor chip is located close to the center portion of the semiconductor chip. A semiconductor device characterized in that it is longer than the conductive connection portion. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connection portion is made of an elastic material, and when at least one of the conductive connection portions is viewed from a direction parallel to the active surface of the semiconductor chip, two or more bent portions or curved portions are formed. And the insulating sealant is made of an elastic material,
When the conductive connection portion is viewed from a direction perpendicular to the active surface of the semiconductor chip, the conductive connection portion has the center of gravity when each electrode pad of the semiconductor chip is a uniform mass point and each electrode pad. A semiconductor device, wherein the semiconductor device is disposed so as to be elastically deformed in a straight line direction. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connection portion is made of an elastic material, and when at least one of the conductive connection portions is viewed from a direction parallel to the active surface of the semiconductor chip, two or more bent portions or curved portions are formed. And the insulating sealant is made of an elastic material,
When the conductive connection portion is viewed from a direction parallel to the active surface of the semiconductor chip, the conductive connection portion connected to the electrode pad disposed on the outer peripheral portion of the semiconductor chip and the electrode disposed on the inner side A semiconductor device characterized in that conductive connection portions connected to pads are extended in opposite directions and connected to electrode pads on the circuit board side. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connecting portion is made of an elastic material, and includes at least four bent portions or curved portions when at least one of the conductive connecting portions is viewed from a direction parallel to the active surface of the semiconductor chip. And the insulating sealant is made of an elastic material,
When the conductive connection portion is viewed from a direction perpendicular to the active surface of the semiconductor chip, the conductive connection portion located away from the center portion of the semiconductor chip is located close to the center portion of the semiconductor chip. A semiconductor device characterized in that it is longer than the conductive connection portion. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connecting portion is made of an elastic material, and includes at least four bent portions or curved portions when at least one of the conductive connecting portions is viewed from a direction parallel to the active surface of the semiconductor chip. And the insulating sealant is made of an elastic material,
When the conductive connection portion is viewed from a direction perpendicular to the active surface of the semiconductor chip, the conductive connection portion has the center of gravity when each electrode pad of the semiconductor chip is a uniform mass point and each electrode pad. A semiconductor device, wherein the semiconductor device is disposed so as to be elastically deformed in a straight line direction. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connecting portion is made of an elastic material, and includes at least four bent portions or curved portions when at least one of the conductive connecting portions is viewed from a direction parallel to the active surface of the semiconductor chip. And the insulating sealant is made of an elastic material,
When the conductive connection portion is viewed from a direction parallel to the active surface of the semiconductor chip, the conductive connection portion connected to the electrode pad disposed on the outer peripheral portion of the semiconductor chip and the electrode disposed on the inner side A semiconductor device characterized in that conductive connection portions connected to pads are extended in opposite directions and connected to electrode pads on the circuit board side. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connection portion is made of an elastic material, and at least one of the conductive connection portions is 2 or more when viewed from a direction parallel to the active surface of the semiconductor chip, and 1 or more when viewed from a vertical direction. A bent portion or a curved portion, and the insulating sealant is an elastic material,
When the conductive connection portion is viewed from a direction perpendicular to the active surface of the semiconductor chip, the conductive connection portion located away from the center portion of the semiconductor chip is located close to the center portion of the semiconductor chip. A semiconductor device characterized in that it is longer than the conductive connection portion. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connection portion is made of an elastic material, and at least one of the conductive connection portions is 2 or more when viewed from a direction parallel to the active surface of the semiconductor chip, and 1 or more when viewed from a vertical direction. A bent portion or a curved portion, and the insulating sealant is an elastic material,
When the conductive connection portion is viewed from a direction perpendicular to the active surface of the semiconductor chip, the conductive connection portion has the center of gravity when each electrode pad of the semiconductor chip is a uniform mass point and each electrode pad. A semiconductor device, wherein the semiconductor device is disposed so as to be elastically deformed in a straight line direction. In a semiconductor device in which an electrode pad of a semiconductor chip and a circuit board facing the semiconductor chip are connected by a conductive connection portion, and an insulating sealing agent is filled between the semiconductor chip and the circuit board.
The conductive connection portion is made of an elastic material, and at least one of the conductive connection portions is 2 or more when viewed from a direction parallel to the active surface of the semiconductor chip, and 1 or more when viewed from a vertical direction. A bent portion or a curved portion, and the insulating sealant is an elastic material,
When the conductive connection portion is viewed from a direction parallel to the active surface of the semiconductor chip, the conductive connection portion connected to the electrode pad disposed on the outer peripheral portion of the semiconductor chip and the electrode disposed on the inner side A semiconductor device characterized in that conductive connection portions connected to pads are extended in opposite directions and connected to electrode pads on the circuit board side.   In a semiconductor device in which a semiconductor chip and electrode pads of a circuit board facing the semiconductor chip are connected by a conductive connection portion, the conductive connection portion is mainly made of an elastic material, and the conductive connection portion is an active surface of the semiconductor chip. 2 or more bent portions or curved portions when viewed from a direction parallel to the semiconductor chip, and further, there are two or more connecting portions to the electrode pads of the semiconductor chip or the circuit board. A semiconductor device.

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