JP3775689B2 - 材料をイオン化スパッタリングする方法と装置 - Google Patents

材料をイオン化スパッタリングする方法と装置 Download PDF

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Publication number
JP3775689B2
JP3775689B2 JP54628098A JP54628098A JP3775689B2 JP 3775689 B2 JP3775689 B2 JP 3775689B2 JP 54628098 A JP54628098 A JP 54628098A JP 54628098 A JP54628098 A JP 54628098A JP 3775689 B2 JP3775689 B2 JP 3775689B2
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Japan
Prior art keywords
shield
chamber
window
plasma
target
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Expired - Fee Related
Application number
JP54628098A
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English (en)
Japanese (ja)
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JP2002504187A (ja
Inventor
アシュティアニ，カイハン，アビディ
ワグナー，イスラエル
ワイス，コリイ，エイ．
セイルマルコ，ジェームズ，アンソニー
マッキニョン，クラウド
リカタ，トマス，ジェイ．
ランツマン，アレグザンダー，ディ．
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Priority claimed from US08/837,551 external-priority patent/US5800688A/en
Priority claimed from US08/844,757 external-priority patent/US5948215A/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2002504187A publication Critical patent/JP2002504187A/ja
Application granted granted Critical
Publication of JP3775689B2 publication Critical patent/JP3775689B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
JP54628098A 1997-04-21 1998-04-21 材料をイオン化スパッタリングする方法と装置 Expired - Fee Related JP3775689B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US84475697A 1997-04-21 1997-04-21
US08/844,757 1997-04-21
US08/837,551 US5800688A (en) 1997-04-21 1997-04-21 Apparatus for ionized sputtering
US08/837,551 1997-04-21
US08/844,757 US5948215A (en) 1997-04-21 1997-04-21 Method and apparatus for ionized sputtering
US08/844,756 1997-04-21
PCT/US1998/008033 WO1998048444A1 (en) 1997-04-21 1998-04-21 Method and apparatus for ionized sputtering of materials

Publications (2)

Publication Number Publication Date
JP2002504187A JP2002504187A (ja) 2002-02-05
JP3775689B2 true JP3775689B2 (ja) 2006-05-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP54628098A Expired - Fee Related JP3775689B2 (ja) 1997-04-21 1998-04-21 材料をイオン化スパッタリングする方法と装置

Country Status (7)

Country Link
EP (1) EP0978138A1 (de)
JP (1) JP3775689B2 (de)
KR (1) KR100322330B1 (de)
CN (1) CN1228810C (de)
AU (1) AU6977998A (de)
TW (1) TW460602B (de)
WO (1) WO1998048444A1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6280563B1 (en) 1997-12-31 2001-08-28 Lam Research Corporation Plasma device including a powered non-magnetic metal member between a plasma AC excitation source and the plasma
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6390019B1 (en) * 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
US6117279A (en) * 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition
US6585870B1 (en) 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
SE519931C2 (sv) * 2000-06-19 2003-04-29 Chemfilt R & D Ab Anordning och förfarande för pulsad, starkt joniserad magnetronsputtering
US6592710B1 (en) * 2001-04-12 2003-07-15 Lam Research Corporation Apparatus for controlling the voltage applied to an electrostatic shield used in a plasma generator
DE10045544C2 (de) * 2000-09-07 2002-09-12 Siemens Ag Verfahren zum Aufbringen einer Beschichtung auf eine Lampe
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
US7247221B2 (en) * 2002-05-17 2007-07-24 Applied Films Corporation System and apparatus for control of sputter deposition process
US7959984B2 (en) * 2004-12-22 2011-06-14 Lam Research Corporation Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
KR100720989B1 (ko) * 2005-07-15 2007-05-28 주식회사 뉴파워 프라즈마 멀티 챔버 플라즈마 프로세스 시스템
US20070074968A1 (en) * 2005-09-30 2007-04-05 Mirko Vukovic ICP source for iPVD for uniform plasma in combination high pressure deposition and low pressure etch process
US7353771B2 (en) * 2005-11-07 2008-04-08 Mks Instruments, Inc. Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
KR100719703B1 (ko) * 2005-12-29 2007-05-17 삼성에스디아이 주식회사 입자 빔을 이용한 증착 방법 및 장비
JP4963023B2 (ja) * 2006-01-11 2012-06-27 株式会社アルバック スパッタリング方法及びスパッタリング装置
US7837826B2 (en) * 2006-07-18 2010-11-23 Lam Research Corporation Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof
DE102007037527B4 (de) * 2006-11-10 2013-05-08 Schott Ag Verfahren zum Beschichten von Gegenständen mit Wechselschichten
JP5561812B2 (ja) * 2006-11-28 2014-07-30 サムコ株式会社 プラズマ処理装置
CN102428209A (zh) * 2009-05-20 2012-04-25 株式会社爱发科 成膜方法以及成膜装置
TWI443211B (zh) 2010-05-05 2014-07-01 Hon Hai Prec Ind Co Ltd 鍍膜裝置
CN102234772B (zh) * 2010-05-06 2014-03-26 鸿富锦精密工业（深圳）有限公司 镀膜装置
CN102300383B (zh) * 2010-06-23 2013-03-27 北京北方微电子基地设备工艺研究中心有限责任公司 一种电感耦合装置及应用该装置的等离子体处理设备
WO2012040986A1 (zh) * 2010-09-27 2012-04-05 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体加工设备
CN102573429B (zh) * 2010-12-09 2015-09-02 北京北方微电子基地设备工艺研究中心有限责任公司 屏蔽装置、加工方法及设备、半导体设备
CN102543645B (zh) * 2010-12-14 2015-07-01 北京北方微电子基地设备工艺研究中心有限责任公司 法拉第屏蔽及等离子体加工设备
TWI556690B (zh) * 2011-08-30 2016-11-01 Emd Corp An antenna for a plasma processing apparatus, and a plasma processing apparatus using the same
CN103014745B (zh) * 2011-09-28 2015-07-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种等离子体预清洗装置
CN103796413B (zh) * 2012-11-01 2017-05-03 中微半导体设备(上海)有限公司 等离子反应器及制作半导体基片的方法
CN103820758B (zh) * 2012-11-19 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 物理气相沉积装置
CN105088156A (zh) * 2014-05-05 2015-11-25 上海建冶环保科技股份有限公司 一种磁控溅射设备
CN105097401B (zh) * 2014-05-13 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种反应腔室及半导体加工设备
US10431440B2 (en) * 2015-12-20 2019-10-01 Applied Materials, Inc. Methods and apparatus for processing a substrate
CN105572610B (zh) * 2015-12-23 2018-03-20 中国人民解放军国防科学技术大学 Mems多层线圈及其制备方法
CN108573846A (zh) * 2017-03-09 2018-09-25 北京北方华创微电子装备有限公司 等离子体腔室及等离子体加工设备
TWI713414B (zh) * 2017-10-23 2020-12-11 日商國際電氣股份有限公司 基板處理裝置、半導體裝置之製造方法及記錄媒體
US10867776B2 (en) * 2018-05-09 2020-12-15 Applied Materials, Inc. Physical vapor deposition in-chamber electro-magnet
SG11202104119PA (en) * 2018-11-02 2021-05-28 Beijing Naura Microelectronics Equipment Co Ltd Liner assembly, reaction chamber and semiconductor processing apparatus
CN109946734A (zh) * 2019-03-20 2019-06-28 中国原子能科学研究院 一种低能量重核素离子气体电离室探测器
CN115704087A (zh) * 2021-08-04 2023-02-17 北京北方华创微电子装备有限公司 磁控溅射设备
CN114302548B (zh) * 2021-12-31 2023-07-25 中山市博顿光电科技有限公司 射频电离装置、射频中和器及其控制方法
CN114686831B (zh) * 2022-03-11 2023-11-07 中国电子科技集团公司第四十八研究所 一种用于深孔pvd的金属自离子化装置及镀膜方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
JPH06120169A (ja) * 1992-10-07 1994-04-28 Hitachi Ltd プラズマ生成装置
JP3094688B2 (ja) * 1992-10-12 2000-10-03 富士電機株式会社 絶縁膜の製造方法
DE4235064A1 (de) * 1992-10-17 1994-04-21 Leybold Ag Vorrichtung zum Erzeugen eines Plasmas mittels Kathodenzerstäubung
JPH08316205A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd プラズマ処理方法及びプラズマ処理装置
US5763851A (en) 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
TW327236B (en) 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
US6254737B1 (en) * 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering

Also Published As

Publication number Publication date
WO1998048444A1 (en) 1998-10-29
JP2002504187A (ja) 2002-02-05
TW460602B (en) 2001-10-21
CN1265222A (zh) 2000-08-30
KR100322330B1 (ko) 2002-03-18
EP0978138A1 (de) 2000-02-09
CN1228810C (zh) 2005-11-23
KR20010020136A (ko) 2001-03-15
AU6977998A (en) 1998-11-13

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