JP3771456B2 - 液晶表示装置及び薄膜トランジスタの製造方法 - Google Patents

液晶表示装置及び薄膜トランジスタの製造方法 Download PDF

Info

Publication number
JP3771456B2
JP3771456B2 JP2001061090A JP2001061090A JP3771456B2 JP 3771456 B2 JP3771456 B2 JP 3771456B2 JP 2001061090 A JP2001061090 A JP 2001061090A JP 2001061090 A JP2001061090 A JP 2001061090A JP 3771456 B2 JP3771456 B2 JP 3771456B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
region
liquid crystal
thin film
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001061090A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002258324A (ja
JP2002258324A5 (enExample
Inventor
秀次 野村
孝洋 落合
隆太郎 桶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2001061090A priority Critical patent/JP3771456B2/ja
Publication of JP2002258324A publication Critical patent/JP2002258324A/ja
Publication of JP2002258324A5 publication Critical patent/JP2002258324A5/ja
Application granted granted Critical
Publication of JP3771456B2 publication Critical patent/JP3771456B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2001061090A 2001-03-06 2001-03-06 液晶表示装置及び薄膜トランジスタの製造方法 Expired - Fee Related JP3771456B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001061090A JP3771456B2 (ja) 2001-03-06 2001-03-06 液晶表示装置及び薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001061090A JP3771456B2 (ja) 2001-03-06 2001-03-06 液晶表示装置及び薄膜トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2002258324A JP2002258324A (ja) 2002-09-11
JP2002258324A5 JP2002258324A5 (enExample) 2004-08-26
JP3771456B2 true JP3771456B2 (ja) 2006-04-26

Family

ID=18920437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001061090A Expired - Fee Related JP3771456B2 (ja) 2001-03-06 2001-03-06 液晶表示装置及び薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JP3771456B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100905470B1 (ko) * 2002-11-20 2009-07-02 삼성전자주식회사 박막 트랜지스터 어레이 기판
JP2005062802A (ja) * 2003-07-28 2005-03-10 Advanced Display Inc 薄膜トランジスタアレイ基板の製法
JP4299717B2 (ja) 2004-04-14 2009-07-22 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとその製造方法
JP5266645B2 (ja) * 2007-01-31 2013-08-21 三菱電機株式会社 薄膜トランジスタと該薄膜トランジスタを用いた表示装置
WO2009060922A1 (en) * 2007-11-05 2009-05-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device having the thin film transistor
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2002258324A (ja) 2002-09-11

Similar Documents

Publication Publication Date Title
US7768601B2 (en) Thin film transistor array panel and liquid crystal display including the panel
US7839460B2 (en) Thin film transistor array panel for liquid crystal display and method of manufacturing the same
US7884362B2 (en) Array substrate for liquid crystal display device and method of fabricating the same
US8796680B2 (en) Thin-film transistor substrate and method of manufacturing the same
US11003003B2 (en) Display device
USRE43557E1 (en) Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same
US5981972A (en) Actived matrix substrate having a transistor with multi-layered ohmic contact
JP2005122182A (ja) 表示素子用の薄膜トランジスタ基板及び製造方法
JP3771456B2 (ja) 液晶表示装置及び薄膜トランジスタの製造方法
CN101345246A (zh) 包括tft的有源矩阵驱动式显示装置
KR101272488B1 (ko) 박막트랜지스터 기판, 이의 제조방법 및 이를 가지는 액정표시 패널과 이 액정 표시 패널의 제조방법
US8867003B2 (en) Liquid crystal display device
US6972819B2 (en) Method of manufacturing IPS-LCD using 4-mask process
JP5090133B2 (ja) 液晶表示装置
KR100543042B1 (ko) 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법
KR100436801B1 (ko) 액정 표시 패널
KR100770470B1 (ko) 액정 표시 소자의 게이트 전극 형성방법
CN112582342A (zh) 阵列基板的制作方法
JPH06148681A (ja) 液晶表示装置
KR20060133818A (ko) 광 마스크와 박막 트랜지스터 기판의 제조 방법 및 그에의해 제조된 박막 트랜지스터 기판
JPH01282522A (ja) アクティブマトリックス回路基板とその製造方法及びそれを用いた画像表示装置
KR100991542B1 (ko) 액정표시장치
KR20070115370A (ko) 개구율이 향상된 표시 장치 및 그 제조 방법
KR100656910B1 (ko) 박막 트랜지스터 기판 및 그 제조 방법
JP4742320B2 (ja) アクティブ型液晶表示パネル

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20051004

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20051025

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20051220

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060209

R150 Certificate of patent or registration of utility model

Ref document number: 3771456

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090217

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100217

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100217

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110217

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110217

Year of fee payment: 5

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110217

Year of fee payment: 5

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110217

Year of fee payment: 5

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

S631 Written request for registration of reclamation of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313631

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110217

Year of fee payment: 5

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120217

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120217

Year of fee payment: 6

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

Free format text: JAPANESE INTERMEDIATE CODE: R313121

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120217

Year of fee payment: 6

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120217

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130217

Year of fee payment: 7

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140217

Year of fee payment: 8

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees