JP2002258324A5 - - Google Patents

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Publication number
JP2002258324A5
JP2002258324A5 JP2001061090A JP2001061090A JP2002258324A5 JP 2002258324 A5 JP2002258324 A5 JP 2002258324A5 JP 2001061090 A JP2001061090 A JP 2001061090A JP 2001061090 A JP2001061090 A JP 2001061090A JP 2002258324 A5 JP2002258324 A5 JP 2002258324A5
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JP
Japan
Prior art keywords
semiconductor layer
display device
liquid crystal
crystal display
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001061090A
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English (en)
Japanese (ja)
Other versions
JP3771456B2 (ja
JP2002258324A (ja
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Publication date
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Priority to JP2001061090A priority Critical patent/JP3771456B2/ja
Priority claimed from JP2001061090A external-priority patent/JP3771456B2/ja
Publication of JP2002258324A publication Critical patent/JP2002258324A/ja
Publication of JP2002258324A5 publication Critical patent/JP2002258324A5/ja
Application granted granted Critical
Publication of JP3771456B2 publication Critical patent/JP3771456B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001061090A 2001-03-06 2001-03-06 液晶表示装置及び薄膜トランジスタの製造方法 Expired - Fee Related JP3771456B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001061090A JP3771456B2 (ja) 2001-03-06 2001-03-06 液晶表示装置及び薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001061090A JP3771456B2 (ja) 2001-03-06 2001-03-06 液晶表示装置及び薄膜トランジスタの製造方法

Publications (3)

Publication Number Publication Date
JP2002258324A JP2002258324A (ja) 2002-09-11
JP2002258324A5 true JP2002258324A5 (enExample) 2004-08-26
JP3771456B2 JP3771456B2 (ja) 2006-04-26

Family

ID=18920437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001061090A Expired - Fee Related JP3771456B2 (ja) 2001-03-06 2001-03-06 液晶表示装置及び薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JP3771456B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100905470B1 (ko) * 2002-11-20 2009-07-02 삼성전자주식회사 박막 트랜지스터 어레이 기판
JP2005062802A (ja) * 2003-07-28 2005-03-10 Advanced Display Inc 薄膜トランジスタアレイ基板の製法
JP4299717B2 (ja) 2004-04-14 2009-07-22 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとその製造方法
JP5266645B2 (ja) * 2007-01-31 2013-08-21 三菱電機株式会社 薄膜トランジスタと該薄膜トランジスタを用いた表示装置
WO2009060922A1 (en) * 2007-11-05 2009-05-14 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device having the thin film transistor
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
KR101667909B1 (ko) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
EP2180518B1 (en) 2008-10-24 2018-04-25 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing semiconductor device
US8741702B2 (en) 2008-10-24 2014-06-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

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