JP3766245B2 - パタン形成方法および半導体装置の製造方法 - Google Patents
パタン形成方法および半導体装置の製造方法 Download PDFInfo
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- JP3766245B2 JP3766245B2 JP35696999A JP35696999A JP3766245B2 JP 3766245 B2 JP3766245 B2 JP 3766245B2 JP 35696999 A JP35696999 A JP 35696999A JP 35696999 A JP35696999 A JP 35696999A JP 3766245 B2 JP3766245 B2 JP 3766245B2
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| Application Number | Priority Date | Filing Date | Title |
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| JP35696999A JP3766245B2 (ja) | 1999-12-16 | 1999-12-16 | パタン形成方法および半導体装置の製造方法 |
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| JP35696999A JP3766245B2 (ja) | 1999-12-16 | 1999-12-16 | パタン形成方法および半導体装置の製造方法 |
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| JP2001174993A JP2001174993A (ja) | 2001-06-29 |
| JP2001174993A5 JP2001174993A5 (enExample) | 2004-08-19 |
| JP3766245B2 true JP3766245B2 (ja) | 2006-04-12 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2004252146A (ja) * | 2002-05-27 | 2004-09-09 | Tokyo Ohka Kogyo Co Ltd | ネガ型レジスト組成物 |
| JP4233314B2 (ja) | 2002-11-29 | 2009-03-04 | 東京応化工業株式会社 | レジスト組成物および溶解制御剤 |
| WO2006121162A1 (ja) * | 2005-05-13 | 2006-11-16 | Jsr Corporation | 感放射線性樹脂組成物の製造方法 |
| JP2009258506A (ja) * | 2008-04-18 | 2009-11-05 | Fujifilm Corp | ネガ型レジスト組成物およびレジストパターン形成方法 |
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