JP3764400B2 - 静電容量型傾斜センサ - Google Patents
静電容量型傾斜センサ Download PDFInfo
- Publication number
- JP3764400B2 JP3764400B2 JP2002081719A JP2002081719A JP3764400B2 JP 3764400 B2 JP3764400 B2 JP 3764400B2 JP 2002081719 A JP2002081719 A JP 2002081719A JP 2002081719 A JP2002081719 A JP 2002081719A JP 3764400 B2 JP3764400 B2 JP 3764400B2
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- JP
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- Prior art keywords
- mass
- electrode
- electrodes
- substrate
- detection electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 43
- 230000003068 static effect Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 86
- 238000000034 method Methods 0.000 description 20
- 239000007788 liquid Substances 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 10
- 230000005484 gravity Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000005459 micromachining Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 241000277331 Salmonidae Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002081719A JP3764400B2 (ja) | 2002-03-22 | 2002-03-22 | 静電容量型傾斜センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002081719A JP3764400B2 (ja) | 2002-03-22 | 2002-03-22 | 静電容量型傾斜センサ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003279349A JP2003279349A (ja) | 2003-10-02 |
JP2003279349A5 JP2003279349A5 (enrdf_load_stackoverflow) | 2005-05-19 |
JP3764400B2 true JP3764400B2 (ja) | 2006-04-05 |
Family
ID=29230239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002081719A Expired - Fee Related JP3764400B2 (ja) | 2002-03-22 | 2002-03-22 | 静電容量型傾斜センサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3764400B2 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110811096A (zh) * | 2019-12-06 | 2020-02-21 | 宿州青智网络科技有限公司 | 一种智能警报以及防丢的老人用辅助拐杖 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2005088664A1 (ja) * | 2004-03-12 | 2008-05-08 | 群馬県 | スイッチ機能を有するセンサ、その製造方法、およびこれらを組み込んだ電子機器 |
KR20130071040A (ko) * | 2011-12-20 | 2013-06-28 | 삼성전기주식회사 | 관성센서 |
CN103712601B (zh) * | 2012-10-08 | 2016-06-01 | 硕英股份有限公司 | 液体多层电容倾斜微传感器 |
US11511037B2 (en) | 2018-06-08 | 2022-11-29 | Analog Devices, Inc. | Systems and methods for measuring needle depth |
-
2002
- 2002-03-22 JP JP2002081719A patent/JP3764400B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110811096A (zh) * | 2019-12-06 | 2020-02-21 | 宿州青智网络科技有限公司 | 一种智能警报以及防丢的老人用辅助拐杖 |
Also Published As
Publication number | Publication date |
---|---|
JP2003279349A (ja) | 2003-10-02 |
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