JP3762091B2 - 近接場光リソグラフィー方法 - Google Patents
近接場光リソグラフィー方法 Download PDFInfo
- Publication number
- JP3762091B2 JP3762091B2 JP04441598A JP4441598A JP3762091B2 JP 3762091 B2 JP3762091 B2 JP 3762091B2 JP 04441598 A JP04441598 A JP 04441598A JP 4441598 A JP4441598 A JP 4441598A JP 3762091 B2 JP3762091 B2 JP 3762091B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- light
- field
- micro
- optical head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microscoopes, Condenser (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04441598A JP3762091B2 (ja) | 1998-02-10 | 1998-02-10 | 近接場光リソグラフィー方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04441598A JP3762091B2 (ja) | 1998-02-10 | 1998-02-10 | 近接場光リソグラフィー方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11233427A JPH11233427A (ja) | 1999-08-27 |
| JPH11233427A5 JPH11233427A5 (https=) | 2004-12-02 |
| JP3762091B2 true JP3762091B2 (ja) | 2006-03-29 |
Family
ID=12690878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04441598A Expired - Fee Related JP3762091B2 (ja) | 1998-02-10 | 1998-02-10 | 近接場光リソグラフィー方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3762091B2 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4749682B2 (ja) * | 2003-06-04 | 2011-08-17 | 富士フイルム株式会社 | 露光装置 |
| JP4328320B2 (ja) * | 2004-09-03 | 2009-09-09 | サンエー技研株式会社 | 露光用光源 |
| JP2011215285A (ja) * | 2010-03-31 | 2011-10-27 | Yamatake Corp | 受光光学系 |
| WO2015043450A1 (zh) | 2013-09-24 | 2015-04-02 | 中国科学院光电技术研究所 | 超分辨成像光刻 |
| US10684555B2 (en) * | 2018-03-22 | 2020-06-16 | Applied Materials, Inc. | Spatial light modulator with variable intensity diodes |
| KR20210128529A (ko) * | 2020-04-16 | 2021-10-27 | 삼성디스플레이 주식회사 | 노광 장치 및 이를 이용하는 표시 장치 제조 방법 |
-
1998
- 1998-02-10 JP JP04441598A patent/JP3762091B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH11233427A (ja) | 1999-08-27 |
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