JP3753382B2 - 薄いSi/SiGe二重層において結晶欠陥を測定する方法 - Google Patents
薄いSi/SiGe二重層において結晶欠陥を測定する方法 Download PDFInfo
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- JP3753382B2 JP3753382B2 JP2004256067A JP2004256067A JP3753382B2 JP 3753382 B2 JP3753382 B2 JP 3753382B2 JP 2004256067 A JP2004256067 A JP 2004256067A JP 2004256067 A JP2004256067 A JP 2004256067A JP 3753382 B2 JP3753382 B2 JP 3753382B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N2021/8461—Investigating impurities in semiconductor, e.g. Silicon
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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Description
SiGe合金層上に配置したSi層を含む構造に、Siにおいて欠陥選択性のある欠陥エッチング液による第1のエッチングを行って、SiGe合金層に接触するSi層内の少なくとも1つのピット欠陥を形成するステップと、
少なくとも1つのピット欠陥を含む構造に、第1のエッチングと同じかまたは異なるエッチング液による第2のエッチングを行い、該第2のエッチングによって少なくとも1つのピット欠陥の下のSiGe層をアンダーカットするようにするステップと、
を備える。
Claims (10)
- Si/SiGe二重層構造において結晶欠陥を検出する方法であって、
SiGe合金層上に配置したSi層を含む構造に、Siにおいて欠陥選択性のある欠陥エッチング液による第1のエッチングを行って、前記Si層内に、前記SiGe合金層に達するピット欠陥を形成するステップと、
前記ピット欠陥を含む前記構造に、前記第1のエッチングと同じかまたは異なるエッチング液による第2のエッチングを行って、前記ピット欠陥の下の前記SiGe層をアンダーカットするステップと、
を備える方法。 - 前記SiGe合金層は99.99原子パーセントまでのGeを含む、請求項1に記載の方法。
- 前記欠陥エッチング液は、HFおよび二クロム酸カリウムの混合物、HF、二クロム酸カリウム、および蒸留水の混合物、HFおよび三酸化クロムの混合物、または、HF、三酸化クロム、および蒸留水の混合物を含む、請求項1に記載の方法。
- 前記欠陥エッチング液は、HFを2部、0.15M二クロム酸カリウムを1部および脱イオン水を6部含む、請求項1に記載の方法。
- 前記第2のエッチングは、前記第1のエッチングと同じエッチング液を用いる、請求項1ないし4のいずれかに記載の方法。
- 前記第2のエッチングは前記欠陥エッチング液とは異なるエッチング液を用いて行われ、前記異なるエッチング液はSiよりも速い速度でSiGeをエッチングする、請求項1ないし4のいずれかに記載の方法。
- 前記異なるエッチング液はHF、H2O2および酢酸の混合物、または、硝酸およびHFの混合物を含む、請求項6に記載の方法。
- 前記異なるエッチング液は、HFを1部、H2O2を2部および酢酸を3部含む、請求項6に記載の方法。
- 前記第1のエッチングは、傾斜エッチングプロセスを用いて行われる、請求項1に記載の方法。
- Si/SiGe二重層構造において結晶欠陥密度を測定する方法であって、
SiGe合金層上に配置したSi層を含む構造に、Siにおいて欠陥選択性のある欠陥エッチング液による第1のエッチングを行って、前記SiGe合金層に接触する前記Si層内の少なくとも1つのピット欠陥を形成するステップと、
前記少なくとも1つのピット欠陥を含む前記構造に、前記第1のエッチングと同じかまたは異なるエッチング液による第2のエッチングを行い、該第2のエッチングによって前記少なくとも1つのピット欠陥の下の前記SiGe層をアンダーカットするようにするステップと、
前記エッチングを行った構造を顕微鏡のもとで走査して前記少なくとも1つのピット欠陥がアンダーカットされた領域を識別し、欠陥密度に換算するため欠陥数を算出するステップと、
を備える方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/654,231 US6803240B1 (en) | 2003-09-03 | 2003-09-03 | Method of measuring crystal defects in thin Si/SiGe bilayers |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005079602A JP2005079602A (ja) | 2005-03-24 |
JP3753382B2 true JP3753382B2 (ja) | 2006-03-08 |
Family
ID=33098460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004256067A Expired - Fee Related JP3753382B2 (ja) | 2003-09-03 | 2004-09-02 | 薄いSi/SiGe二重層において結晶欠陥を測定する方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6803240B1 (ja) |
JP (1) | JP3753382B2 (ja) |
KR (1) | KR100588033B1 (ja) |
CN (1) | CN1258214C (ja) |
TW (1) | TWI309862B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4784391B2 (ja) * | 2006-05-16 | 2011-10-05 | 株式会社Sumco | ウェーハの欠陥検出方法 |
EP1926130A1 (en) * | 2006-11-27 | 2008-05-28 | S.O.I.TEC. Silicon on Insulator Technologies S.A. | Method of improving the surface of a semiconductor substrate |
US8236593B2 (en) * | 2007-05-14 | 2012-08-07 | Soitec | Methods for improving the quality of epitaxially-grown semiconductor materials |
CN100541726C (zh) * | 2008-01-30 | 2009-09-16 | 中国科学院上海技术物理研究所 | 用于ⅱ-ⅵ族半导体材料位错显示的腐蚀剂及腐蚀方法 |
EP2226374B1 (en) * | 2009-03-06 | 2012-05-16 | S.O.I. TEC Silicon | Etching composition, in particular for silicon materials, method for characterizing defects of such materials and process of treating such surfaces with etching composition |
JP4758492B2 (ja) * | 2009-03-24 | 2011-08-31 | トヨタ自動車株式会社 | 単結晶の欠陥密度測定方法 |
US9136186B2 (en) * | 2013-01-15 | 2015-09-15 | Epistar Corporation | Method and apparatus for making a semiconductor device |
US9123634B2 (en) * | 2013-01-15 | 2015-09-01 | Epistar Corporation | Method for making semiconductor device and semiconductor device made thereby |
CN104599993B (zh) * | 2014-12-31 | 2018-08-24 | 杭州士兰集成电路有限公司 | 一种检测硅衬底质量的方法 |
CN105047579B (zh) * | 2015-07-29 | 2018-05-11 | 上海华力集成电路制造有限公司 | 检测嵌入式锗硅外延缺失缺陷的方法 |
CN111599707A (zh) * | 2020-05-27 | 2020-08-28 | 广州粤芯半导体技术有限公司 | 钝化层微裂纹的检测方法 |
KR102255421B1 (ko) * | 2020-08-11 | 2021-05-24 | 충남대학교산학협력단 | 단결정 산화갈륨의 결함 평가방법 |
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DE19749962C2 (de) * | 1997-11-04 | 2002-05-16 | Inst Halbleiterphysik Gmbh | Verfahren zur quantitativen Bestimmung der Misfitversetzungsdichte in Silizium-Germanium-Heterobipolartransistor- Schichtstapeln und Ätzlösung dafür |
US7227176B2 (en) * | 1998-04-10 | 2007-06-05 | Massachusetts Institute Of Technology | Etch stop layer system |
US6391662B1 (en) * | 1999-09-23 | 2002-05-21 | Memc Electronic Materials, Inc. | Process for detecting agglomerated intrinsic point defects by metal decoration |
JP2004519090A (ja) * | 2000-08-07 | 2004-06-24 | アンバーウェーブ システムズ コーポレイション | 歪み表面チャネル及び歪み埋め込みチャネルmosfet素子のゲート技術 |
US6541356B2 (en) * | 2001-05-21 | 2003-04-01 | International Business Machines Corporation | Ultimate SIMOX |
US20030227057A1 (en) * | 2002-06-07 | 2003-12-11 | Lochtefeld Anthony J. | Strained-semiconductor-on-insulator device structures |
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2003
- 2003-09-03 US US10/654,231 patent/US6803240B1/en not_active Expired - Fee Related
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2004
- 2004-08-06 KR KR1020040061934A patent/KR100588033B1/ko not_active IP Right Cessation
- 2004-08-31 CN CNB2004100683705A patent/CN1258214C/zh not_active Expired - Fee Related
- 2004-09-01 TW TW093126402A patent/TWI309862B/zh not_active IP Right Cessation
- 2004-09-02 JP JP2004256067A patent/JP3753382B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN1601274A (zh) | 2005-03-30 |
KR100588033B1 (ko) | 2006-06-09 |
TWI309862B (en) | 2009-05-11 |
US6803240B1 (en) | 2004-10-12 |
CN1258214C (zh) | 2006-05-31 |
TW200529310A (en) | 2005-09-01 |
JP2005079602A (ja) | 2005-03-24 |
KR20050025260A (ko) | 2005-03-14 |
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