JP3749008B2 - Epitaxial film inspection element and method of manufacturing the same - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a structure of a test element for evaluating an epitaxial film test element, particularly an epitaxial film of a high-speed bipolar transistor, and a method of manufacturing the same.
[0002]
[Prior art]
In the measurement of the epitaxial film conventionally used, the film thickness and sheet resistance of the epitaxial film are measured over the entire surface of the wafer using a dedicated wafer.
[0003]
[Problems to be solved by the invention]
However, as the speed of high-speed bipolar is further increased and transistors are miniaturized, selective epitaxial films have been used in the base region. Evaluation of crystallinity and control of sheet resistance in the fine region are indispensable. Technology has become.
[0004]
In the conventional monitoring using the monitor wafer described above, it was possible to measure the film thickness and the sheet resistance in a large area, but the epitaxial with the same size as the transistor (width 1 μm or less, thickness 0.1 μm or less). Evaluation of the film was not possible for the reasons described below.
FIG. 10 is a cross-sectional view of an element manufacturing process according to a conventional method.
[0005]
(1) First, as shown in FIG. 10A, an oxide film 602 is formed on a first conductive type semiconductor substrate 601. Subsequently, a polycrystalline silicon film 603 and an oxidation resistant film 604 are sequentially formed. To do.
(2) Next, as shown in FIG. 10B, a part of the oxidation resistant film 604 and the polycrystalline silicon film 603 are sequentially removed by using a known photolithography etching technique, and the oxidation resistant film pattern 604a, A polycrystalline silicon film pattern 603a is formed.
[0006]
(3) Next, as shown in FIG. 10C, when a nitride film (not shown) is formed on the entire surface and well-known anisotropic etching is performed, a sidewall 605 is generated in the opening.
(4) Next, as shown in FIG. 10D, a part of the oxide film 602 is removed using buffered hydrofluoric acid to form an oxide film pattern 602a.
[0007]
(5) Next, as shown in FIG. 10E, an epitaxial film 606 is formed in the removed portion of the oxide film 602 by a known selective epitaxial film growth technique. At this time, epitaxial films are grown from the direction of the substrate 601 at the opening and from the polycrystalline silicon film 603, and both are connected in a self-aligning manner.
However, the conventional method described above cannot detect the difference in epitaxial film growth between a large area and a small area, and the finished state on an actual device can only be confirmed by a destructive test after the wafer process is completed. could not.
[0008]
Furthermore, since the epitaxial film is connected to the polycrystalline silicon film for electrode extraction in a self-aligned manner due to its growth, various characteristics of the single epitaxial film layer cannot be measured with the transistor pattern.
The present invention eliminates the above-mentioned problems, and provides an epitaxial film inspection element and a method for manufacturing the same, which can easily measure various characteristics of an epitaxial film that determine the performance of an ultrahigh-speed bipolar element or the like in a process. For the purpose.
[0009]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides
[1] In an inspection device for an epitaxial film of a high-speed bipolar transistor, an opening from which a part of an oxide film formed on the main surface of a first conductivity type semiconductor substrate is removed, and a polycrystalline semiconductor formed on the semiconductor substrate Patterning the film and the oxidation-resistant film, and having a slit opening opened inside the opening and a pair of measurement terminal lead pad openings formed at both ends of the slit opening, the slit A slit portion made of a selective epitaxial film and a pair of measurement terminal lead pad portions connected to both ends of the slit portion , which are formed in the opening for the portion and the pad portion opening, are provided. .
[0010]
[2] In the epitaxial film inspection element of the high-speed bipolar transistor as described in [1] above, a slit-like dummy pattern is arranged in parallel to the slit portion.
[3] In an inspection device for an epitaxial film of a high-speed bipolar transistor, an opening from which a part of an oxide film formed on the main surface of a first conductivity type semiconductor substrate is removed, and a polycrystalline semiconductor formed on the semiconductor substrate Patterning the film and the oxidation-resistant film, a slit portion opening formed inside the opening, a pair of first measurement terminal lead pad openings formed at both ends of the slit portion opening, and the slit portion A pair of second measurement terminal lead pad openings that are connected in the width direction of the slit portion from the middle of the slit, the slit measurement openings, the first measurement terminal lead pad openings, and the formed in the second measurement terminal lead pad portions for the opening, selective epitaxial consisting film, the first measurement terminal argument pair formed at both ends of the slit portion and the slit portion Is obtained by so arranging the second measurement terminal lead pad section from the middle and the pad portion of the slit portion of the pair connected in the width direction of the slit portion out.
[0011]
[4] In an epitaxial film inspection element of a high-speed bipolar transistor, an opening from which a part of an oxide film formed on the main surface of a first conductivity type semiconductor substrate is removed, and a polycrystalline semiconductor formed on the semiconductor substrate The film and the oxidation-resistant film are patterned , and are connected to a plurality of slit openings opened inside the openings and to both ends of the plurality of slit openings, and sequentially connected in series to the slit openings. A plurality of measurement terminal lead pad openings, and a plurality of slit portions made of a selective epitaxial film formed in the slit lead openings and the measurement terminal lead pad openings. A plurality of measurement terminal lead pad portions connected to both ends of the plurality of slit portions and sequentially arranged in series in the slit portion are arranged.
[0012]
[5] In an epitaxial film inspection element of a high-speed bipolar transistor, an opening from which a part of an oxide film formed on the main surface of a first conductivity type semiconductor substrate is removed, and a polycrystalline semiconductor formed on the semiconductor substrate Patterning the film and the oxidation-resistant film, and having a slit opening opened inside the opening and a pair of measurement terminal lead pad openings formed at both ends of the slit opening, the slit A slit portion made of a selective epitaxial film, and a pair of measurement terminal lead pad portions connected to both ends of the slit portion, and the slit formed on the semiconductor substrate. A polycrystalline semiconductor film doped with an impurity of the second conductivity type intersecting the portion, and a contact portion between the polycrystalline semiconductor film and the epitaxial film of the slit portion Generated is obtained so as to provide a second conductivity type diffusion layer.
[0013]
[6] In a method for manufacturing an inspection device for an epitaxial film of a high speed bipolar transistor , an oxide film is formed on a main surface of a first conductivity type semiconductor substrate, a part of the oxide film is removed, and an opening is formed; ,
(B) forming a polycrystalline semiconductor film and an oxidation resistant film on the entire surface;
(C) A part of the polycrystalline semiconductor film and the oxidation-resistant film is removed , a slit part opening in the opening and a pair of measurement terminal lead pad openings formed at both ends of the slit part opening, Forming a step;
(D) by performing the entire surface generate oxidation film is etched, a sidewall on the sidewall of the slit portion opening and a pair of measuring terminals drawer pad portion for apertures formed at both ends of the slit portion opening Forming a step;
Surrounded by openings (e) of the side walls, made of selected epitaxial film, such as to carry out a step of forming a slit portion and a pair of measuring terminal lead pad portions connected to both ends of the slit portion It is a thing.
[0014]
[7] In the method of manufacturing an inspection device for an epitaxial film of a high-speed bipolar transistor as described in [6] above, in the step (c), the pair of measurement terminal pad openings each have an opening size of 50 μm × 50 μm or more. I Do not that those were Unishi.
[8] In the method for manufacturing an epitaxial film inspection element for a high-speed bipolar transistor as described in [6] above, in the step (c), a slit-like dummy pattern opening is formed in parallel with the slit portion opening. A slit-like dummy pattern made of a selective epitaxial film is arranged in the opening of the slit-like dummy pattern .
[0015]
[9] A method of manufacturing a semiconductor device of a high-speed bipolar transistor according to [6], wherein (a) following the step (e), a polycrystalline semiconductor film is formed on a main surface thereof, and the polycrystalline semiconductor film introducing a second conductivity type impurity into,
(B) removing a part of the second conductive type polycrystalline semiconductor film and forming a second conductive type polycrystalline semiconductor film pattern intersecting the slit part ;
(C) Heat-treating the second conductivity type polycrystalline semiconductor film pattern so as to form a second conductivity type diffusion layer at a contact portion between the second conductivity type polycrystalline semiconductor film pattern and the epitaxial film of the slit portion. It is a thing.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail.
1 is a schematic plan view of an epitaxial film inspection element according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line AA in FIG. 1, FIG. 3 is a cross-sectional view taken along line BB in FIG. These are sectional views of manufacturing steps of an epitaxial film inspection element according to the first embodiment of the present invention.
[0017]
The first embodiment of the present invention will be described with reference to these drawings.
101 is a P-type semiconductor substrate, 102 is an oxide film, 102a is an oxide film pattern, 103 is a polycrystalline silicon film, 103a is a polycrystalline silicon film pattern, 104 is a nitride film, 104a is a nitride film pattern, 105 is an opening, 106 Are side walls, 107 is an epitaxial film (pattern), 107A is a thin slit portion of the epitaxial film, and 107B is a pad portion for drawing out a measurement terminal.
[0018]
A method for manufacturing the epitaxial film inspection element will be described below.
(1) First, as shown in FIG. 4A, an oxide film 102 is formed on a P-type semiconductor substrate 101. That is, it becomes the state of the substrate after the element isolation step.
(2) Next, as shown in FIG. 4B, a part of the oxide film 102 is selectively removed using a known photolithography etching technique to form an oxide film pattern 102a. Subsequently, a polycrystalline silicon film 103 is deposited on the entire surface, and a silicon nitride film 104 is further generated.
[0019]
(3) Next, as shown in FIG. 4C, a resist R is applied and etched to form a resist mask for patterning the silicon nitride film 104 and the polycrystalline silicon film 103.
Thereafter, the silicon nitride film 104 and the polycrystalline silicon film 103 are continuously etched to form a silicon nitride film pattern 104a and a polycrystalline silicon film pattern 103a.
[0020]
At this time, openings of a size of 50 × 50 μm or more, that is, measurement pad regions are formed at both ends of the silicon nitride film pattern 104a and the polycrystalline silicon film pattern 103a.
(4) Subsequently, the resist mask is removed, and a silicon nitride film (not shown) is deposited and anisotropic etching is performed as shown in FIG. Is generated.
[0021]
(5) Subsequently, as shown in FIG. 4E, an epitaxial film pattern (as shown in FIG. 1) is formed in the opening 105 surrounded by the sidewall 106 using a known selective etching technique. The epitaxial film 107A to the portion and the epitaxial film 107B) 107 to the measurement terminal lead pad portion are generated.
As described above, according to the first embodiment, the epitaxial film 107 can be generated in the same slit portion as the actual device (actual integrated circuit) as a TEG (test element group) of the same wafer.
[0022]
The resistance value of the epitaxial film can be obtained by passing a current between the measurement terminal lead pad portions 107B and 107B formed in this way and measuring the potential difference between the measurement terminal lead pad portions 107B. The film thickness can be determined based on this resistance value.
Thus, immediately after the end of the process, the thickness of the epitaxial film can be easily and electrically measured.
[0023]
For example, when the measurement is performed with the width of the opening 105 being 0.5 μm, the length being 10 μm, the area of the measurement pad being 90 μm per side, and the epitaxial film thickness being 500 mm, the resistance value is about 5Ω. . When the epitaxial film thickness varies by ± 10%, the resistance value can also be detected with a fluctuation of 10%.
Thus, in the first embodiment, in-line measurement of the epitaxial film on the actual device, single unit evaluation, and measurement in a predetermined area can be performed.
[0024]
Next, a second embodiment of the present invention will be described.
FIG. 5 is a schematic plan view of an epitaxial film inspection element according to a second embodiment of the present invention.
In this figure, 202a is an oxide film pattern, 204a is a nitride film pattern, 207 is an epitaxial film, 207A is a thin slit portion of the epitaxial film, and 207B is a pad portion for measuring terminal lead connected to the thin slit portion 207A. It is.
[0025]
In this embodiment, a slit-like dummy pattern 207C is arranged in parallel with the thin slit portion 207A of the epitaxial film.
As shown in this figure, in the step (3) of the first embodiment, that is, when patterning is performed using a well-known photolithography etching technique, the same slit as the thin slit 207A is formed around the thin slit 207A. A plurality of dummy patterns 207C having an opening having a width are formed in parallel.
[0026]
As described above, according to the second embodiment, it is possible to measure the epitaxial film thickness in a dense pattern or a proximity pattern of transistors.
That is, the in-line measurement of the epitaxial film on the actual device and the film thickness evaluation at the dense part such as the array can be performed.
Next, a third embodiment of the present invention will be described.
[0027]
FIG. 6 is a schematic plan view of an epitaxial film inspection element according to a third embodiment of the present invention.
In this figure, 302a is an oxide film pattern, 304a is a nitride film pattern, 307 is an epitaxial film, 307A is a slit portion of the epitaxial film, 307B is a measurement terminal lead pad portion connected to the slit portion 307A, and 307C is A slit portion connected to point a of the slit portion 307A, 307D is a measurement terminal lead pad portion connected to the slit portion 307C, 307E is a slit portion connected to point b of the slit portion 307A, and 307F is connected to the slit portion 307E. It is a pad portion for connecting a measurement terminal to be connected.
[0028]
In this embodiment, in the step (3) of the first embodiment, an opening having the shape shown in FIG. 6 is provided in the step of patterning the nitride film 304, and thereafter an epitaxial film is formed there.
In this way, the pattern shape of the patterned epitaxial film is obtained, and for example, a current is supplied to the measurement terminal lead pad portion 307B (left side) -slit-shaped epitaxial film 307A-measurement lead lead pad portion 307B (right side). When the potential difference between the measurement terminal lead pad portions 307D and 307F is measured, the resistance between the points a and b of the slit-shaped epitaxial film 307A can be accurately measured.
[0029]
As described above, according to the third embodiment, by adopting the Kenbin measuring method, it is possible to obtain a highly accurate measurement result of the epitaxial film as compared with the first embodiment.
That is, in this embodiment, in-line measurement of the epitaxial film on the actual device, single unit evaluation, and high-precision Kenbin measurement can be performed.
[0030]
Next, a fourth embodiment of the present invention will be described.
FIG. 7 is a schematic plan view of an epitaxial film inspection element according to a fourth embodiment of the present invention.
In this figure, 402a is an oxide film pattern, 404a is a nitride film pattern, and 407 is an epitaxial film pattern.
[0031]
In this embodiment, in the step (3) of the first embodiment, the patterning of the nitride film 404a is formed as shown in FIG.
Therefore, a constant current is passed through pad (a) -pad (d) in FIG. 7 and the potential difference between pad (b) -pad (c) is measured, whereby the film thickness of the second line (2) is measured. Can be measured. Further, when a constant current is passed through the pad (b) -pad (e) and the potential difference between the pad (c) -pad (d) is measured, the film thickness of the third line (3) is similarly determined. The thickness of the fourth line (4) can be measured by passing a constant current through (c) -pad (f) and measuring the potential difference between pad (d) -pad (e).
[0032]
In other words, 2 pads are usually required to measure the film thickness of one line, and 10 pads are required to measure the film thickness of 5 lines. According to this layout, the number of pads for measurement is required. Can be reduced.
As described above, according to the fourth embodiment, by adopting the Kenbin measurement method, it is possible to accurately measure the film thickness of the epitaxial film in a closely-patterned state.
[0033]
That is, in this embodiment, in-line measurement of an epitaxial film on an actual device, film thickness evaluation at a dense portion such as an array, and high-precision Kenbin measurement can be performed.
Next, a fifth embodiment of the present invention will be described.
FIG. 8 is a schematic plan view of an epitaxial film inspection element according to a fifth embodiment of the present invention. FIG. 9 is a cross-sectional view of the epitaxial film inspection element according to the fifth embodiment of the present invention.
[0034]
In these figures, 501 is a P-type semiconductor substrate, 502a is an oxide film pattern, 503a is a polycrystalline silicon film pattern, 504a is a nitride film pattern, 507 is an epitaxial film pattern, 507A is a thin slit portion of the epitaxial film, Reference numeral 507B denotes a measurement terminal lead pad portion, 508 denotes a polycrystalline silicon film, and 508a denotes a polycrystalline silicon pattern.
[0035]
FIG. 9A shows a state where a polycrystalline silicon film 508 is formed following the step (e) of the first embodiment.
Next, as shown in FIG. 9B, As ions are implanted into the entire surface, and the polycrystalline silicon film 508 is partially removed by using a well-known photolithography etching technique, so that a polycrystalline silicon film pattern 508a is obtained. Form. Subsequently, for example, when heat treatment is performed at 900 ° C. for 30 minutes, an N-type diffusion layer 509 is generated.
[0036]
As described above, according to the fifth embodiment, the thickness of the base region in the actual device can be known by measuring the resistance of the slit-shaped epitaxial film region 507 with the N-type diffusion layer 509. .
That is, in this embodiment, in-line measurement of an epitaxial film on an actual device, measurement in a predetermined area, and measurement of pinch resistance can be performed.
[0037]
In addition, this invention is not limited to the said Example, A various deformation | transformation is possible based on the meaning of this invention, and these are not excluded from the scope of the present invention.
[0038]
【The invention's effect】
As described above in detail, according to the present invention, the following effects can be obtained.
(A) According to the invention of claim 1, 6 or 7, immediately after the completion of the process, the characteristics of the epitaxial film, for example, the film thickness can be easily and electrically measured.
[0039]
(B) According to invention of Claim 2 or 8, the epitaxial film thickness in the dense pattern of a transistor, or a proximity pattern can be measured.
(C) According to the invention described in claim 3 or 4, by adopting the Kenbin measuring method, it is possible to obtain a highly accurate measurement result of the epitaxial film as compared with the first embodiment.
[0040]
(D) According to the invention described in claim 5 or 9, the resistance of the slit-shaped epitaxial film region can be measured by the N-type diffusion layer, and the base region in the actual device (real integrated circuit) can be measured. You can know the film thickness.
[Brief description of the drawings]
FIG. 1 is a schematic plan view of an epitaxial film inspection element according to a first embodiment of the present invention.
FIG. 2 is a cross-sectional view taken along line AA in FIG.
FIG. 3 is a cross-sectional view taken along line BB in FIG.
FIG. 4 is a cross-sectional view of a manufacturing process of an epitaxial film inspection element according to the first embodiment of the present invention.
FIG. 5 is a schematic plan view of an epitaxial film inspection element according to a second embodiment of the present invention.
FIG. 6 is a schematic plan view of an epitaxial film inspection element according to a third embodiment of the present invention.
FIG. 7 is a schematic plan view of an epitaxial film inspection element according to a fourth embodiment of the present invention.
FIG. 8 is a schematic plan view of an epitaxial film inspection element according to a fifth embodiment of the present invention.
FIG. 9 is a cross-sectional view of an epitaxial film inspection element according to a fifth embodiment of the present invention.
FIG. 10 is a cross-sectional view of an element manufacturing process according to a conventional method.
[Explanation of symbols]
101, 501 P-type semiconductor substrate 102 Oxide films 102a, 202a, 302a, 402a, 502a Oxide film patterns 103, 508 Polycrystalline silicon films 103a, 503a, 508a Polycrystalline silicon film patterns 104, 207 Nitride films 104a, 204a, 304a, 404a, 504a Nitride film pattern 105 Opening 106 Side wall 107, 207, 307, 407, 507 Epitaxial film (pattern)
107A, 207A, 307A, 307C, 307E, 507A Narrow slit 107B, 207B, 307B, 307D, 307F, 507B Measurement terminal lead pad 207C Dummy pattern (opening)
509 N-type diffusion layer

Claims (9)

An opening to remove a portion of the generated oxide film on the main surface of the first conductivity type semiconductor substrate, a polycrystalline semiconductor film and oxidation film formed on the semiconductor substrate and patterned internal pre Symbol opening A slit portion opening and a pair of measurement terminal lead pad openings formed at both ends of the slit portion opening, and formed in the slit portion opening and the pad portion opening. An inspection device for an epitaxial film of a high-speed bipolar transistor comprising a slit portion made of a selective epitaxial film and a pair of measurement terminal lead pad portions connected to both ends of the slit portion. In test element of the epitaxial film of the high-speed bipolar transistor of claim 1, wherein the test element of the epitaxial film of the high-speed bipolar transistor, characterized in that arranged parallel to the slit-shaped dummy pattern in the slit portion. An opening from which a part of the oxide film formed on the main surface of the first conductivity type semiconductor substrate is removed, and a polycrystalline semiconductor film and an oxidation resistant film formed on the semiconductor substrate are patterned, and the opening is formed inside the opening. A pair of first measurement terminal lead pad openings formed at both ends of the slit portion opening and a pair of first measurement terminal lead pad openings formed in the width direction of the slit portion from the middle of the slit portion. A second measurement terminal lead pad portion opening, and formed in the slit portion opening, the first measurement terminal lead pad portion opening, and the second measurement terminal lead pad portion opening. been, selective epitaxial consisting film, one which is connected from the middle of the slit portion and the first measurement terminal lead pad portions of a pair formed at both ends of the slit portion and the front Symbol slit portion in the width direction of the slit portion Test element of the epitaxial film of the high-speed bipolar transistor, characterized in that arranging the second measurement terminal lead pad of the. An opening from which a part of the oxide film formed on the main surface of the first conductivity type semiconductor substrate is removed, and a polycrystalline semiconductor film and an oxidation resistant film formed on the semiconductor substrate are patterned, and the opening is formed inside the opening. There are a plurality of opened openings for slit portions and a plurality of openings for measuring terminal lead pads connected in series to the ends of the plurality of slit portion openings and sequentially connected in series to the slit portion openings. and, wherein the slit opening and formed in the measuring terminal lead pad portions for the opening, made of selective epitaxial film, are connected to both ends of the plurality of slit portions and the plurality of slit portions, sequentially slits test element of the epitaxial film of the high-speed bipolar transistor, characterized in that arranging the plurality of measurement terminal lead pad portion disposed in series. An opening from which a part of the oxide film formed on the main surface of the first conductivity type semiconductor substrate is removed, and a polycrystalline semiconductor film and an oxidation resistant film formed on the semiconductor substrate are patterned, and the opening is formed inside the opening. It has an opening for the slit part and a pair of measurement terminal lead pad openings formed at both ends of the slit part opening, and is formed in the slit part opening and the pad part opening. A selective epitaxial film made of a selective epitaxial film, a pair of measurement terminal lead pad portions connected to both ends of the slit portion, and a second conductivity type impurity intersecting the slit portion on the semiconductor substrate. a polycrystalline semiconductor film, a high speed bipolar tiger, characterized in that it comprises a polycrystalline semiconductor film and the second conductive type diffusion layer formed in the contact site between the epitaxial layer of the slit portion Inspection element of the epitaxial film of the register. (A) forming an oxide film on a main surface of a first conductivity type semiconductor substrate, removing a part of the oxide film , and forming an opening ;
(B) forming a polycrystalline semiconductor film and an oxidation resistant film on the entire surface;
(C) A part of the polycrystalline semiconductor film and the oxidation-resistant film is removed , a slit part opening and a pair of measurement terminal lead pad part openings formed at both ends of the slit part opening in the opening; Forming a step;
(D) by performing the entire surface generate oxidation film is etched, a sidewall on the sidewall of the slit portion opening and said slit portions for the pair of measuring terminal lead pad section for apertures formed at both ends of the opening Forming a step;
(E) forming a slit portion made of a selective epitaxial film and a pair of measurement terminal lead pad portions connected to both ends of the slit portion in the opening surrounded by the sidewall ; A method for manufacturing an inspection device for an epitaxial film of a high-speed bipolar transistor . The method of manufacturing a test device of the epitaxial film of the high-speed bipolar transistor of claim 6, wherein in the step (c), Turkey and such from the pair of measurement terminal pads for opening of 50 [mu] m × 50 [mu] m or more size each opening A manufacturing method of an inspection element for an epitaxial film of a high-speed bipolar transistor . 7. The method of manufacturing an inspection device for an epitaxial film of a high speed bipolar transistor according to claim 6, wherein in the step (c), an opening of a slit-like dummy pattern is formed in parallel to the opening for the slit portion, and the slit-like dummy is formed. A method for manufacturing an inspection device for an epitaxial film of a high-speed bipolar transistor , wherein a slit-like dummy pattern made of a selective epitaxial film is disposed in an opening of the pattern . In the manufacturing method of the test | inspection element of the epitaxial film of the high-speed bipolar transistor of Claim 6,
(A) Subsequent to the step (e), a step of generating a polycrystalline semiconductor film on the principal surface and introducing a second conductivity type impurity into the polycrystalline semiconductor film ;
(B) removing a part of the second conductive type polycrystalline semiconductor film and forming a second conductive type polycrystalline semiconductor film pattern intersecting the slit part ;
(C) Heat-treating the second conductive type polycrystalline semiconductor film pattern to form a second conductive type diffusion layer at a contact portion between the second conductive type polycrystalline semiconductor film pattern and the epitaxial film of the slit portion. A manufacturing method of an inspection element for an epitaxial film of a high-speed bipolar transistor .

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