JP3729953B2 - Ｔｆｔアレイ基板とその製法 - Google Patents

Ｔｆｔアレイ基板とその製法 Download PDF

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Publication number
JP3729953B2
JP3729953B2 JP32156696A JP32156696A JP3729953B2 JP 3729953 B2 JP3729953 B2 JP 3729953B2 JP 32156696 A JP32156696 A JP 32156696A JP 32156696 A JP32156696 A JP 32156696A JP 3729953 B2 JP3729953 B2 JP 3729953B2
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Japan
Prior art keywords
electrode
charge collector
layer
insulating film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP32156696A
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English (en)
Japanese (ja)
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JPH10163463A (ja
JPH10163463A5 (enrdf_load_html_response
Inventor
育弘 鵜飼
禎三 湯川
正路 新庄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to JP32156696A priority Critical patent/JP3729953B2/ja
Publication of JPH10163463A publication Critical patent/JPH10163463A/ja
Publication of JPH10163463A5 publication Critical patent/JPH10163463A5/ja
Application granted granted Critical
Publication of JP3729953B2 publication Critical patent/JP3729953B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Liquid Crystal (AREA)
JP32156696A 1996-12-02 1996-12-02 Ｔｆｔアレイ基板とその製法 Expired - Fee Related JP3729953B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32156696A JP3729953B2 (ja) 1996-12-02 1996-12-02 Ｔｆｔアレイ基板とその製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32156696A JP3729953B2 (ja) 1996-12-02 1996-12-02 Ｔｆｔアレイ基板とその製法

Publications (3)

Publication Number Publication Date
JPH10163463A JPH10163463A (ja) 1998-06-19
JPH10163463A5 JPH10163463A5 (enrdf_load_html_response) 2004-11-18
JP3729953B2 true JP3729953B2 (ja) 2005-12-21

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ID=18134006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32156696A Expired - Fee Related JP3729953B2 (ja) 1996-12-02 1996-12-02 Ｔｆｔアレイ基板とその製法

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JP (1) JP3729953B2 (enrdf_load_html_response)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501098B2 (en) 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR100577410B1 (ko) * 1999-11-30 2006-05-08 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
US6559506B1 (en) * 2002-04-03 2003-05-06 General Electric Company Imaging array and methods for fabricating same
US6740884B2 (en) * 2002-04-03 2004-05-25 General Electric Company Imaging array and methods for fabricating same
CN102544027B (zh) 2004-09-15 2016-02-17 株式会社半导体能源研究所 半导体器件
TWI285929B (en) * 2006-02-15 2007-08-21 Au Optronics Corp Manufacturing method of pixel structure
EP3550604A1 (en) 2009-12-25 2019-10-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6345544B2 (ja) * 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105789324B (zh) * 2016-04-15 2019-05-03 京东方科技集团股份有限公司 传感器及其制造方法、电子设备

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Publication number Publication date
JPH10163463A (ja) 1998-06-19

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