JP3729953B2 - Ｔｆｔアレイ基板とその製法 - Google Patents

Ｔｆｔアレイ基板とその製法 Download PDF

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Publication number
JP3729953B2
JP3729953B2 JP32156696A JP32156696A JP3729953B2 JP 3729953 B2 JP3729953 B2 JP 3729953B2 JP 32156696 A JP32156696 A JP 32156696A JP 32156696 A JP32156696 A JP 32156696A JP 3729953 B2 JP3729953 B2 JP 3729953B2
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Japan
Prior art keywords
electrode
charge collector
layer
insulating film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP32156696A
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English (en)
Japanese (ja)
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JPH10163463A (ja
JPH10163463A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
育弘 鵜飼
禎三 湯川
正路 新庄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to JP32156696A priority Critical patent/JP3729953B2/ja
Publication of JPH10163463A publication Critical patent/JPH10163463A/ja
Publication of JPH10163463A5 publication Critical patent/JPH10163463A5/ja
Application granted granted Critical
Publication of JP3729953B2 publication Critical patent/JP3729953B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Liquid Crystal (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP32156696A 1996-12-02 1996-12-02 Ｔｆｔアレイ基板とその製法 Expired - Fee Related JP3729953B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32156696A JP3729953B2 (ja) 1996-12-02 1996-12-02 Ｔｆｔアレイ基板とその製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32156696A JP3729953B2 (ja) 1996-12-02 1996-12-02 Ｔｆｔアレイ基板とその製法

Publications (3)

Publication Number Publication Date
JPH10163463A JPH10163463A (ja) 1998-06-19
JPH10163463A5 JPH10163463A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2004-11-18
JP3729953B2 true JP3729953B2 (ja) 2005-12-21

Family

ID=18134006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32156696A Expired - Fee Related JP3729953B2 (ja) 1996-12-02 1996-12-02 Ｔｆｔアレイ基板とその製法

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JP (1) JP3729953B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501098B2 (en) 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR100577410B1 (ko) 1999-11-30 2006-05-08 엘지.필립스 엘시디 주식회사 엑스레이 영상 감지소자 및 그 제조방법
US6559506B1 (en) * 2002-04-03 2003-05-06 General Electric Company Imaging array and methods for fabricating same
US6740884B2 (en) * 2002-04-03 2004-05-25 General Electric Company Imaging array and methods for fabricating same
WO2006030937A1 (en) * 2004-09-15 2006-03-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI285929B (en) * 2006-02-15 2007-08-21 Au Optronics Corp Manufacturing method of pixel structure
KR101994632B1 (ko) 2009-12-25 2019-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6345544B2 (ja) * 2013-09-05 2018-06-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN105789324B (zh) * 2016-04-15 2019-05-03 京东方科技集团股份有限公司 传感器及其制造方法、电子设备

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Publication number Publication date
JPH10163463A (ja) 1998-06-19

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