JP3724419B2 - 真空表示素子 - Google Patents

真空表示素子 Download PDF

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Publication number
JP3724419B2
JP3724419B2 JP2001383224A JP2001383224A JP3724419B2 JP 3724419 B2 JP3724419 B2 JP 3724419B2 JP 2001383224 A JP2001383224 A JP 2001383224A JP 2001383224 A JP2001383224 A JP 2001383224A JP 3724419 B2 JP3724419 B2 JP 3724419B2
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JP
Japan
Prior art keywords
substrate
anode
light emitting
electrode
control
Prior art date
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Expired - Fee Related
Application number
JP2001383224A
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English (en)
Japanese (ja)
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JP2003187723A5 (https=
JP2003187723A (ja
Inventor
衛 浪川
武 利根川
俊英 平山
誠 市江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
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Futaba Corp
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Publication date
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Priority to JP2001383224A priority Critical patent/JP3724419B2/ja
Publication of JP2003187723A publication Critical patent/JP2003187723A/ja
Publication of JP2003187723A5 publication Critical patent/JP2003187723A5/ja
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Publication of JP3724419B2 publication Critical patent/JP3724419B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2001383224A 2001-12-17 2001-12-17 真空表示素子 Expired - Fee Related JP3724419B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001383224A JP3724419B2 (ja) 2001-12-17 2001-12-17 真空表示素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001383224A JP3724419B2 (ja) 2001-12-17 2001-12-17 真空表示素子

Publications (3)

Publication Number Publication Date
JP2003187723A JP2003187723A (ja) 2003-07-04
JP2003187723A5 JP2003187723A5 (https=) 2005-07-21
JP3724419B2 true JP3724419B2 (ja) 2005-12-07

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ID=27593339

Family Applications (1)

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JP2001383224A Expired - Fee Related JP3724419B2 (ja) 2001-12-17 2001-12-17 真空表示素子

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JP (1) JP3724419B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108447753A (zh) * 2018-03-26 2018-08-24 东南大学 用于降低电子截获的场发射高精度双栅结构及其安装方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100989420B1 (ko) * 2003-11-28 2010-10-26 삼성에스디아이 주식회사 전계 방출 표시장치
JP4750576B2 (ja) * 2006-02-22 2011-08-17 株式会社ピュアロンジャパン 電界放出型光源
JP6377027B2 (ja) * 2015-08-03 2018-08-22 株式会社ノリタケカンパニーリミテド 真空管
JP6473258B2 (ja) * 2018-04-27 2019-02-20 株式会社ノリタケカンパニーリミテド アナログ増幅用真空管
KR102586724B1 (ko) * 2019-08-09 2023-10-10 에프이아이 컴파니 공진 rf 캐비티의 유전체 삽입체 상의 코팅물

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108447753A (zh) * 2018-03-26 2018-08-24 东南大学 用于降低电子截获的场发射高精度双栅结构及其安装方法

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Publication number Publication date
JP2003187723A (ja) 2003-07-04

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