JP3704965B2 - ドライエッチング方法及び装置 - Google Patents
ドライエッチング方法及び装置 Download PDFInfo
- Publication number
- JP3704965B2 JP3704965B2 JP23944198A JP23944198A JP3704965B2 JP 3704965 B2 JP3704965 B2 JP 3704965B2 JP 23944198 A JP23944198 A JP 23944198A JP 23944198 A JP23944198 A JP 23944198A JP 3704965 B2 JP3704965 B2 JP 3704965B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processed
- reactive gas
- dry etching
- reactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 34
- 238000001312 dry etching Methods 0.000 title claims description 23
- 239000007789 gas Substances 0.000 claims description 187
- 238000005530 etching Methods 0.000 claims description 57
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 46
- 229910001868 water Inorganic materials 0.000 claims description 42
- 238000012545 processing Methods 0.000 claims description 33
- 229910052731 fluorine Inorganic materials 0.000 claims description 28
- 239000011737 fluorine Substances 0.000 claims description 27
- 229910052736 halogen Inorganic materials 0.000 claims description 20
- 150000002367 halogens Chemical class 0.000 claims description 20
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 13
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000004809 Teflon Substances 0.000 claims description 5
- 229920006362 Teflon® Polymers 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 20
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- -1 fluorine ions Chemical class 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000007795 chemical reaction product Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000010517 secondary reaction Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000001784 detoxification Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23944198A JP3704965B2 (ja) | 1998-08-12 | 1998-08-12 | ドライエッチング方法及び装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23944198A JP3704965B2 (ja) | 1998-08-12 | 1998-08-12 | ドライエッチング方法及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000058508A JP2000058508A (ja) | 2000-02-25 |
| JP2000058508A5 JP2000058508A5 (enExample) | 2004-10-21 |
| JP3704965B2 true JP3704965B2 (ja) | 2005-10-12 |
Family
ID=17044828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23944198A Expired - Fee Related JP3704965B2 (ja) | 1998-08-12 | 1998-08-12 | ドライエッチング方法及び装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3704965B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4153961B2 (ja) * | 2006-04-25 | 2008-09-24 | 積水化学工業株式会社 | シリコンのエッチング方法 |
| TWI335450B (en) * | 2006-05-15 | 2011-01-01 | Ind Tech Res Inst | Film cleaning method and apparatus |
| FR2913912A1 (fr) * | 2007-03-23 | 2008-09-26 | Cirtes Src Sa | Procede de conception d'un emballage par stratoconception integre au procede de conception du produit a emballer. |
| US8771539B2 (en) * | 2011-02-22 | 2014-07-08 | Applied Materials, Inc. | Remotely-excited fluorine and water vapor etch |
| KR101661096B1 (ko) * | 2015-03-20 | 2016-09-30 | 주식회사 엔씨디 | 마스크 프리 건식 식각 장치 및 건식 식각 방법 |
| KR102459129B1 (ko) * | 2020-04-30 | 2022-10-26 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 플라즈마 처리 장치 |
| JP2023071064A (ja) * | 2021-11-10 | 2023-05-22 | 東京エレクトロン株式会社 | プラズマ源及びプラズマ処理装置 |
| WO2024247461A1 (ja) * | 2023-05-31 | 2024-12-05 | Ａｇｃ株式会社 | 凹部構造を有する部材を製造する方法および凹部構造を有する部材 |
-
1998
- 1998-08-12 JP JP23944198A patent/JP3704965B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2000058508A (ja) | 2000-02-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6051150A (en) | Plasma etching method and method of manufacturing liquid crystal display panel | |
| US6689252B1 (en) | Abatement of hazardous gases in effluent | |
| KR100372186B1 (ko) | 환경적으로유해한화합물의분해장치및분해방법 | |
| US8168128B2 (en) | Plasma reactor | |
| US5750823A (en) | Process and device for destruction of halohydrocarbons | |
| CN1917932B (zh) | 包含氟化合物的气流的处理方法和装置 | |
| US20100239473A1 (en) | Apparatus for decomposing organic matter with radical treatment method using electric discharge | |
| KR960009031A (ko) | 질화 실리콘(Silicon Nitride)막의 UV-촉진된 건식 스트리핑 방법 | |
| EP0968524A1 (en) | Atmospheric-pressure plasma jet | |
| JP3704965B2 (ja) | ドライエッチング方法及び装置 | |
| JP5088375B2 (ja) | 誘電体バリア放電装置 | |
| US6576573B2 (en) | Atmospheric pressure plasma enhanced abatement of semiconductor process effluent species | |
| US6905663B1 (en) | Apparatus and process for the abatement of semiconductor manufacturing effluents containing fluorine gas | |
| US20140079617A1 (en) | Apparatus for treating a gas stream | |
| KR102014942B1 (ko) | 유해가스 분해용 반응기 | |
| JP2007517650A (ja) | 高周波放電によるガス処理方法 | |
| JP2003236338A (ja) | 有機ハロゲン含有ガスの処理方法および装置 | |
| JPH11156156A (ja) | ハロゲン系ガスの処理方法、処理装置および反応処理装置並びに半導体装置 | |
| KR100347746B1 (ko) | 고온 플라즈마를 이용한 프레온가스 분해장치 | |
| US5316639A (en) | Dielectric material used for an ozone generator and a method of forming a film to the dielectric material | |
| EP0478777B1 (en) | Coated dielectric material for an ozone generator | |
| WO2013183300A1 (ja) | ガス処理装置および方法 | |
| JP2012129239A (ja) | エッチング装置及び方法 | |
| Yamashita et al. | Humidify effect on non-thermal plasma processing for VOCs decomposition | |
| JP2768760B2 (ja) | レジストアッシング装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040422 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040427 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040628 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20050705 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20050718 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080805 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090805 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090805 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100805 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110805 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120805 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130805 Year of fee payment: 8 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |