JP3649042B2 - IC chip connection method and liquid crystal device manufacturing method - Google Patents

IC chip connection method and liquid crystal device manufacturing method Download PDF

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Publication number
JP3649042B2
JP3649042B2 JP14971299A JP14971299A JP3649042B2 JP 3649042 B2 JP3649042 B2 JP 3649042B2 JP 14971299 A JP14971299 A JP 14971299A JP 14971299 A JP14971299 A JP 14971299A JP 3649042 B2 JP3649042 B2 JP 3649042B2
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Prior art keywords
chip
side terminal
liquid crystal
substrate
center line
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JP2000340613A (en
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憲治 内山
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Seiko Epson Corp
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Seiko Epson Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

Description

【0001】
【発明の属する技術分野】
本発明は、ICチップに設けられたIC側端子と、基板に設けられた基板側端子とを導電接続するICチップの接続方法及び液晶装置の製造方法に関する。
【0002】
【従来の技術】
ICチップを例えば液晶装置の基板上に実装する方法として、従来、いわゆるフリップチップ方式の実装方法が知られている。この実装方法では、バンプ等といったIC側端子がICチップの1つの面に複数個集められ、これらのIC側端子が基板上に設けられた複数の基板側端子に個々に導電接続される。
【0003】
図4は従来広く知られているフリップチップ方式のICチップ51をその能動面51a側から見た状態を示している。多くのフリップチップ方式のICチップ51においては、図示の通り、その能動面51aに複数のバンプ52がまとめて形成され、これらのバンプ52は互いに対向する一対のバンプ列R1及びR2を形成するのが一般的である。そして、それらのバンプ列間の中心線L1は、ICチップ51の外形Gの中心線L0に一致するのが通常であった。
【0004】
従来、ICチップ51を基板上に接続する際には、一般に、ICチップ51を加圧ヘッドによって基板に押し付けてそのICチップ51を基板に接着する。そしてその場合、加圧ヘッドは、その押圧中心線がICチップ51の外形の中心線L0に一致する状態でICチップ51を押圧するように設定されていた。
【0005】
【発明が解決しようとする課題】
しかしながら最近では、バンプ列R1及びバンプ列R2の中心線L1がIC外形Gの中心線L0に一致しない構造のICチップが製造されるようになってきた。このようなICチップのバンプを上記従来の接続方法によって基板上の端子に接続しようとすると、加圧ヘッドはICチップの外形中心線を押圧するものの、その押圧点はバンプ列間の中心線からずれているので、全てのバンプに対して均一な押圧力を加えることができず、一部のバンプに対しては十分な押圧力が加えられる反面、他のバンプに対しては不十分な押圧力しか加わらず、その結果、ICチップと基板との間の接続信頼性が低下するという問題があった。
【0006】
本発明は、上記の問題点に鑑みて成されたものであって、バンプ等といったIC側端子に関する中心線がICチップの外形の中心線からずれる構造のICチップを基板に実装する際に、個々のIC側端子にほぼ均一な押圧力が加わるようにして導電接続の信頼性を向上することを目的とする。
【0007】
【課題を解決するための手段】
(1) 上記の目的を達成するため、本発明に係るICチップの接続方法及び液晶装置の製造方法は、ICチップに設けられたIC側端子と、基板に設けられた基板側端子とを導電接続するICチップの接続方法であって、前記IC側端子は互いに対向する一対の端子列を形成し且つその端子列間の中心線は前記ICチップの外形中心線からずれている構造のICチップの接続方法において、前記ICチップと前記基板との間に接着用材料を介在させ、加圧ヘッドの押圧中心が前記IC側端子列間の中心線にほぼ一致する状態でその加圧ヘッドによって前記ICチップを押圧することを特徴とする。
【0008】
このICチップの接続方法及び液晶装置の製造方法によれば、加圧ヘッドの押圧中心が常にIC側端子列間の中心線にほぼ一致するので、加圧ヘッドから複数のIC側端子に加わる押圧力は全てのIC側端子の個々に関して正確にほぼ均一になり、よって、IC側端子と基板側端子との間の導電接続の接続信頼性を高く維持することができる。
【0009】
(2) 上記構成のICチップの接続方法及び液晶装置の製造方法においては、前記接着用材料として非導電性接着剤を用いることができる。この非導電性接着剤としては、エポキシ系、アクリル系、ウレタン系といった各種の接着剤が考えられる。非導電性接着剤を用いる場合は、前記IC側端子と前記基板側端子とは互いに直接に接触することによって両者間の導電接続が達成される。
【0010】
(3) 上記(1)記載のICチップの接続方法及び液晶装置の製造方法においては、前記接着用材料としてACF(Anisotropic Conductive Film :異方性導電膜)を用いることができる。このACFは、例えば樹脂フィルムの中に導電粒子を分散させることによって形成されるフィルム状の接着用材料である。このACFを用いる場合は、前記IC側端子と前記基板側端子とは前記導電粒子を通して導電接続される。
【0011】
(4) 上記(1)記載のICチップの接続方法及び液晶装置の製造方法においては、前記接着用材料として等方性導電ペースト、例えば銀ペーストを用いることができる。そしてこの場合には、前記IC側端子と前記基板側端子とはその等方性導電ペーストを通して導電接続される。
【0012】
【発明の実施の形態】
以下、添付図面を参照して、本発明によるICチップの接続方法及び液晶装置の製造方法の実施の形態を、ICチップとしての液晶駆動用ICを液晶パネルの基板上に接続する場合を例として説明する。
【0013】
図1は、本発明に係るICチップの接続方法及び液晶装置の製造方法の一実施形態を示している。この実施形態は、ICチップとしての液晶駆動用IC1に設けられるIC側端子としての複数のバンプ2を、液晶パネル3を構成する一方の基板4a上に形成された複数の基板側端子6のそれぞれに導電接続するための方法である。
【0014】
液晶パネル3は互いに対向する一対の基板4a及び4bを有し、これらの基板はシール材7によってそれらの周囲が互いに接着される。これらの基板4a及び4bは、例えばガラス等といった硬質な光透過性材料や、プラスチック等といった可撓性を有する光透過性材料等によって形成された基板素材に電極その他の必要要素を形成することによって作製される。
【0015】
図2において、第1基板4aの基板素材8aの液晶側表面、すなわち第2基板4bに対向する面には、例えばコモン電極として作用する第1電極9aが所定のパターンに形成され、その上にオーバーコート層11aが形成され、さらにその上に配向膜12aが形成される。また、第1基板4aに対向する第2基板4bの液晶側表面、すなわち第1基板4aに対向する面には、例えばセグメント電極として作用する第2電極9bが所定のパターンに形成され、その上にオーバーコート層11bが形成され、さらにその上に配向膜12bが形成される。
【0016】
第1電極9a及び第2電極9bは、例えばITO(Indium Tin Oxide)等の透明電極によって1000オングストローム程度の厚さに形成され、オーバーコート層11a及び11bは、例えば酸化珪素、酸化チタン又はそれらの混合物等によって800オングストローム程度の厚さに形成され、そして配向膜12a及び12bは、例えばポリイミド系樹脂によって800オングストローム程度の厚さに形成される。
【0017】
第1電極9aは複数の直線パターンを互いに平行に配列することによって、いわゆるストライプ状に形成され、一方、第2電極9bは上記第1電極9aに交差するように複数の直線パターンを互いに平行に配列することによって、やはりストライプ状に形成される。これらの電極9aと電極9bとがドットマトリクス状に交差する複数の点が、像を表示するための画素を形成する。
【0018】
以上のようにして形成された第1基板4a及び第2基板4bのいずれか一方の液晶側表面には複数のスペーサ13が分散され、さらにいずれか一方の基板の液晶側表面にシール材7が例えば印刷等によって図1に示すように枠状に設けられる。このシール材7の内部には図2に示すように導通材16が分散される。次に、シール材7を挟んで両基板4a及び4bを互いに貼り合わせ、さらに所定の温度で加熱することにより、シール材7によって両基板4a及び4bを接合する。
【0019】
両基板4a及び4bの間にはスペーサ13によって保持される均一な寸法、例えば5μm程度の間隙、いわゆるセルギャップが形成され、シール材7の一部に設けた液晶注入口7a(図1参照)を通してそのセルギャップ内に液晶14が注入され、その注入の完了後、液晶注入口7aが樹脂等によって封止される。
【0020】
図1において、第1基板4aは第2基板4bの外側へ張り出す張出し部4cを有し、第1基板4a上の第1電極9aはその張出し部4cへ直接に延び出て基板側端子6となっている。また、第2基板4b上の第2電極9bは、シール材7の内部に分散した導通材16(図2参照)を介して、張出し部4c上の基板側端子6に接続している。
【0021】
なお、各電極9a及び9b並びにそれらから延びる基板側端子6は、実際には極めて狭い間隔で多数本がそれぞれの基板4a及び4bの表面全域に形成されるが、図1では構造を分かり易く示すために実際の間隔よりも広い間隔でそれらの電極等を模式的に図示し、さらに一部の電極の図示は省略してある。また、液晶が封入される領域内の電極9a及び9bは、直線状に形成されることに限られず、適宜のパターン状に形成されることもある。
【0022】
液晶駆動用IC1を基板4aの張出し部4cの上に実装するに際しては、まず、液晶駆動用IC1を実装すべき領域であってそのIC1とほぼ同じ面積の領域であるIC実装領域Jに、接着用材料としてのACF(Anisotropic Conductive Film )17を貼着し、次いで液晶駆動用IC1のバンプ2が形成された面、すなわち能動面1aをACF17に貼り付けて、液晶駆動用IC1をIC実装領域Jに仮装着する。
【0023】
ACF17は、周知の通り、一対の端子間を異方性を持たせて電気的に一括接続するために用いられる導電性のある高分子フィルムであって、例えば図2に示すように、熱可塑性又は熱硬化性の樹脂フィルム18の中に多数の導電粒子19を分散させることによって形成される。
【0024】
このACF17を挟んで基板張出し部4cと液晶駆動用IC1とを熱圧着することにより、液晶駆動用IC1のバンプ2と基板張出し部4c上の基板側端子6との間において単一方向の導電性を持つ接続を実現する。ここにいう熱圧着とは、接着対象物である液晶駆動用IC1と基板張出し部4cとの間にACF17を挟んだ状態でそれら液晶駆動用IC1と基板張出し部4cとを加圧して接着することである。
【0025】
液晶駆動用IC1と基板4aとを加圧するため、本実施形態では、図1に示すように液晶パネル3をテーブル23の上に載せた状態で、加圧ヘッド22を矢印Aのように液晶駆動用IC1へ向けて移動させながら、その加圧ヘッド22によって液晶駆動用IC1を基板4aの張出し部4cへ押し付ける。なお、加圧ヘッド22は図示しないヒータによって所定温度に加熱され、この熱によりACF17が所定温度に加熱される。
【0026】
以上のように構成された液晶パネルに関しては、さらに図2に鎖線で示すように、基板4a及び基板4bの外側表面にそれぞれ偏光板21a及び21bが貼着される。液晶駆動用IC1によって、第1電極9a又は第2電極9bのいずれか一方に対して行ごとに走査電圧を印加し、さらにそれらの電極の他方に対して表示画像に基づいたデータ電圧を画素ごとに印加することにより、両電圧の印加によって選択された各画素部分を通過する光を変調し、もって基板4a又は4bの外側に文字、数字等といった像を表示する。
【0027】
本実施形態で用いる液晶駆動用IC1について、その能動面1aを見ると、図3に示す通りである。このIC1では、複数のバンプ2が矩形状の配列パターンで並べられ、その結果、互いに対向する一対の端子列、すなわちバンプ列R1及びR2が形成されている。また、本実施形態のIC1では、特に、外形Gの中心線L0と、バンプ列R1とバンプ列R2との間の中心線L1とが互いに位置的にずれている。
【0028】
前記のようにして液晶駆動用IC1を基板4aの張出し部4cのIC実装領域Jに実装する際、本実施形態では図2に示すように、加圧ヘッド22の押圧中心線L2が液晶駆動用IC1の外形中心線L0ではなくて、バンプ列間中心線L1にほぼ一致する状態で加圧ヘッド22によって液晶駆動用IC1を押圧するように設定されている。
【0029】
ここで、加圧ヘッド22の押圧中心線L2は、加圧ヘッド22の加圧面の中心線とすることができ、あるいは、加圧ヘッド22の押圧力が集中的に作用する線とすることもできる。
【0030】
以上のように加圧ヘッド22の押圧中心線L2を液晶駆動用IC1のバンプ列間中心線L1に一致させることにより、本実施形態のようにバンプ列間中心線L1と液晶駆動用IC1の外形中心線L0とが互いに位置ズレして形成される場合、すなわちIC1のバンプ2がIC1の外形中心線L0に対して偏在する場合でも、加圧ヘッド1からの加圧力すなわち圧着力を各々のバンプ2に常にほぼ均一に加えることができ、その結果、バンプ2の接続信頼性を向上させることができる。
【0031】
(その他の実施形態)
以上、好ましい実施形態を挙げて本発明を説明したが、本発明はその実施形態に限定されるものでなく、請求の範囲に記載した発明の範囲内で種々に改変できる。
【0032】
例えば、図1の実施形態では、液晶パネルを構成する一対の基板の一方にICチップを実装する場合を例に挙げたが、液晶パネルの基板以外の任意の基板、例えば、抵抗、コンデンサ、トランジスタその他の各種電子チップ部品を搭載して成る通常の配線基板の上にICチップを実装する場合にも本発明を適用できる。従って当然のことながら、ICチップは液晶駆動用ICに限られず、任意の回路構成のICチップとすることができる。
【0033】
また、図1では基板上に1つのICチップを実装する場合を例に挙げたが、複数のICチップを実装する場合にも本発明を適用できることはもちろんである。
【0034】
また、図1では接着用材料としてACFを用いたが、これに代えて、エポキシ系、アクリル系、ウレタン系等といった各種の非導電性接着剤や、銀ペースト等といった等方性の導電ペーストや、ペースト状接着剤の中に導電粒子を分散させて成るACA(Anisotropic Conductive Adhesive:異方性導電接着剤)等を接着用材料として用いることもできる。
【0035】
【発明の効果】
本発明に係るICチップの接続方法及び液晶装置の製造方法によれば、加圧ヘッドの押圧中心が常にIC側端子の端子列間の中心線にほぼ一致するので、加圧ヘッドから複数のIC側端子に加わる押圧力は全てのIC側端子の個々に関して正確にほぼ均一になり、よって、IC側端子と基板側端子との間の導電接続の接続信頼性を高く維持することができる。
【図面の簡単な説明】
【図1】本発明に係るICチップの接続方法及び液晶装置の製造方法の一実施形態を示す斜視図である。
【図2】図1のII−II線に従って液晶パネル等の断面構造を示す断面図である。
【図3】ICチップの一例の能動面を示す平面図である。
【図4】従来のICチップの一例を示す平面図である。
【符号の説明】
1 液晶駆動用IC
1a 能動面
2 バンプ(IC側端子)
3 液晶パネル
4a,4b 基板
4c 基板張出し部
6 基板側端子
7 シール材
7a 液晶注入口
9a,9b 電極
14 液晶
17 ACF(接着用材料)
22 加圧ヘッド
23 テーブル
G ICチップの外形
J IC実装領域
L0 ICチップの外形中心線
L1 ICチップのバンプ列間中心線
L2 加圧ヘッドの押圧中心線
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an IC chip connection method and a liquid crystal device manufacturing method for conductively connecting an IC side terminal provided on an IC chip and a substrate side terminal provided on a substrate.
[0002]
[Prior art]
As a method for mounting an IC chip on, for example, a substrate of a liquid crystal device, a so-called flip-chip mounting method is conventionally known. In this mounting method, a plurality of IC side terminals such as bumps are gathered on one surface of the IC chip, and these IC side terminals are individually conductively connected to a plurality of substrate side terminals provided on the substrate.
[0003]
FIG. 4 shows a state in which a flip chip type IC chip 51, which has been widely known, is viewed from the active surface 51a side. In many flip-chip type IC chips 51, as shown in the figure, a plurality of bumps 52 are collectively formed on an active surface 51a, and these bumps 52 form a pair of bump rows R1 and R2 facing each other. Is common. The center line L1 between these bump rows usually coincides with the center line L0 of the outer shape G of the IC chip 51.
[0004]
Conventionally, when the IC chip 51 is connected to a substrate, the IC chip 51 is generally pressed against the substrate by a pressure head and bonded to the substrate. In this case, the pressure head is set so as to press the IC chip 51 in a state where the pressing center line coincides with the center line L0 of the outer shape of the IC chip 51.
[0005]
[Problems to be solved by the invention]
However, recently, an IC chip having a structure in which the center line L1 of the bump row R1 and the bump row R2 does not coincide with the center line L0 of the IC outline G has been manufactured. When trying to connect such IC chip bumps to the terminals on the substrate by the above conventional connection method, the pressure head presses the outer center line of the IC chip, but the pressing point is from the center line between the bump rows. Since they are misaligned, a uniform pressing force cannot be applied to all the bumps, and a sufficient pressing force can be applied to some bumps, but insufficient pressing to other bumps. Only the pressure is applied, and as a result, there is a problem that the connection reliability between the IC chip and the substrate is lowered.
[0006]
The present invention has been made in view of the above problems, and when mounting an IC chip having a structure in which a center line related to an IC side terminal such as a bump is deviated from a center line of the outer shape of the IC chip on a substrate, An object is to improve the reliability of conductive connection by applying a substantially uniform pressing force to each IC-side terminal.
[0007]
[Means for Solving the Problems]
(1) In order to achieve the above object, an IC chip connection method and a liquid crystal device manufacturing method according to the present invention electrically conduct an IC side terminal provided on an IC chip and a substrate side terminal provided on a substrate. A method of connecting IC chips to be connected, wherein the IC side terminals form a pair of terminal rows facing each other, and a center line between the terminal rows is shifted from an outer shape center line of the IC chip In this connection method, an adhesive material is interposed between the IC chip and the substrate, and the pressing head of the pressing head substantially matches the center line between the IC-side terminal rows. The IC chip is pressed.
[0008]
According to this IC chip connection method and liquid crystal device manufacturing method, the pressing center of the pressure head always coincides with the center line between the IC side terminal rows, and therefore, the pressing force applied from the pressure head to the plurality of IC side terminals. The pressure is accurately and substantially uniform with respect to each of all the IC side terminals, so that the connection reliability of the conductive connection between the IC side terminal and the board side terminal can be kept high.
[0009]
(2) In the IC chip connection method and the liquid crystal device manufacturing method configured as described above, a non-conductive adhesive can be used as the bonding material. As this non-conductive adhesive, various adhesives such as epoxy, acrylic and urethane can be considered. In the case of using a non-conductive adhesive, the IC side terminal and the substrate side terminal are in direct contact with each other to achieve a conductive connection therebetween.
[0010]
(3) In the IC chip connection method and the liquid crystal device manufacturing method described in (1) above, an ACF (Anisotropic Conductive Film) can be used as the adhesive material. This ACF is a film-like adhesive material formed by, for example, dispersing conductive particles in a resin film. When this ACF is used, the IC side terminal and the substrate side terminal are conductively connected through the conductive particles.
[0011]
(4) In the IC chip connection method and the liquid crystal device manufacturing method described in (1) above, an isotropic conductive paste, for example, a silver paste, can be used as the adhesive material. In this case, the IC side terminal and the substrate side terminal are conductively connected through the isotropic conductive paste.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, with reference to the attached drawings, an embodiment of an IC chip connecting method and a liquid crystal device manufacturing method according to the present invention will be described by way of an example in which a liquid crystal driving IC as an IC chip is connected to a substrate of a liquid crystal panel. explain.
[0013]
FIG. 1 shows an embodiment of an IC chip connection method and a liquid crystal device manufacturing method according to the present invention. In this embodiment, a plurality of bumps 2 as IC side terminals provided on a liquid crystal driving IC 1 as an IC chip are respectively provided on a plurality of substrate side terminals 6 formed on one substrate 4 a constituting the liquid crystal panel 3. This is a method for conducting a conductive connection.
[0014]
The liquid crystal panel 3 has a pair of substrates 4 a and 4 b facing each other, and these substrates are bonded to each other by a sealing material 7. These substrates 4a and 4b are formed by forming electrodes and other necessary elements on a substrate material formed of a hard light-transmitting material such as glass, or a light-transmitting material having flexibility such as plastic. Produced.
[0015]
In FIG. 2, a first electrode 9a acting as a common electrode, for example, is formed in a predetermined pattern on the liquid crystal side surface of the substrate material 8a of the first substrate 4a, that is, the surface facing the second substrate 4b. An overcoat layer 11a is formed, and an alignment film 12a is further formed thereon. Further, on the liquid crystal side surface of the second substrate 4b facing the first substrate 4a, that is, the surface facing the first substrate 4a, for example, a second electrode 9b acting as a segment electrode is formed in a predetermined pattern. Then, an overcoat layer 11b is formed, and an alignment film 12b is further formed thereon.
[0016]
The first electrode 9a and the second electrode 9b are formed to a thickness of about 1000 angstroms by a transparent electrode such as ITO (Indium Tin Oxide), for example, and the overcoat layers 11a and 11b are made of, for example, silicon oxide, titanium oxide, or their The alignment film 12a and 12b are formed to a thickness of about 800 Å by a polyimide resin, for example.
[0017]
The first electrode 9a is formed in a so-called stripe shape by arranging a plurality of linear patterns in parallel with each other, while the second electrode 9b has a plurality of linear patterns in parallel with each other so as to intersect the first electrode 9a. By arranging, it is also formed in a stripe shape. A plurality of points where these electrodes 9a and 9b intersect in a dot matrix form a pixel for displaying an image.
[0018]
A plurality of spacers 13 are dispersed on the liquid crystal side surface of one of the first substrate 4a and the second substrate 4b formed as described above, and the sealing material 7 is further disposed on the liquid crystal side surface of either one of the substrates. For example, it is provided in a frame shape as shown in FIG. 1 by printing or the like. As shown in FIG. 2, a conductive material 16 is dispersed inside the seal material 7. Next, the substrates 4a and 4b are bonded to each other with the sealing material 7 interposed therebetween, and further heated at a predetermined temperature, so that the substrates 4a and 4b are joined by the sealing material 7.
[0019]
A uniform dimension held by the spacer 13, for example, a gap of about 5 μm, that is, a so-called cell gap is formed between the substrates 4 a and 4 b, and a liquid crystal injection port 7 a provided in a part of the sealing material 7 (see FIG. 1). Then, the liquid crystal 14 is injected into the cell gap, and after the injection is completed, the liquid crystal injection port 7a is sealed with resin or the like.
[0020]
In FIG. 1, the first substrate 4a has an overhanging portion 4c that protrudes to the outside of the second substrate 4b, and the first electrode 9a on the first substrate 4a directly extends to the overhanging portion 4c to form the substrate-side terminal 6. It has become. Further, the second electrode 9b on the second substrate 4b is connected to the substrate-side terminal 6 on the overhanging portion 4c through a conductive material 16 (see FIG. 2) dispersed inside the sealing material 7.
[0021]
The electrodes 9a and 9b and the substrate-side terminals 6 extending from them are actually formed at a very narrow interval over the entire surface of the substrates 4a and 4b. FIG. 1 shows the structure in an easy-to-understand manner. For this purpose, these electrodes and the like are schematically shown at intervals wider than the actual intervals, and some of the electrodes are not shown. Further, the electrodes 9a and 9b in the region in which the liquid crystal is sealed are not limited to be formed in a straight line shape, and may be formed in an appropriate pattern shape.
[0022]
When mounting the liquid crystal driving IC 1 on the overhanging portion 4c of the substrate 4a, first, the liquid crystal driving IC 1 is bonded to an IC mounting region J which is a region where the liquid crystal driving IC 1 is to be mounted and has almost the same area as the IC 1. ACF (Anisotropic Conductive Film) 17 as a material for the liquid crystal is pasted, and then the surface on which the bumps 2 of the liquid crystal driving IC 1 are formed, that is, the active surface 1a is pasted on the ACF 17 to attach the liquid crystal driving IC 1 to the IC mounting region J Temporarily attach to.
[0023]
As is well known, the ACF 17 is a conductive polymer film that is used to electrically connect together a pair of terminals with anisotropy. For example, as shown in FIG. Alternatively, it is formed by dispersing a large number of conductive particles 19 in a thermosetting resin film 18.
[0024]
The substrate overhanging portion 4c and the liquid crystal driving IC 1 are thermocompression-bonded with the ACF 17 interposed therebetween, whereby the unidirectional conductivity is provided between the bump 2 of the liquid crystal driving IC 1 and the substrate side terminal 6 on the substrate overhanging portion 4c. Realize a connection with The term “thermocompression bonding” as used herein refers to bonding the liquid crystal driving IC 1 and the substrate overhanging portion 4c by applying pressure while the ACF 17 is sandwiched between the liquid crystal driving IC1 and the substrate overhanging portion 4c. It is.
[0025]
In this embodiment, in order to pressurize the liquid crystal driving IC 1 and the substrate 4a, the liquid crystal panel 3 is placed on the table 23 as shown in FIG. The liquid crystal driving IC 1 is pressed against the overhanging portion 4c of the substrate 4a by the pressure head 22 while moving toward the IC 1 for use. The pressure head 22 is heated to a predetermined temperature by a heater (not shown), and the ACF 17 is heated to a predetermined temperature by this heat.
[0026]
As for the liquid crystal panel configured as described above, polarizing plates 21a and 21b are attached to the outer surfaces of the substrate 4a and the substrate 4b, respectively, as indicated by chain lines in FIG. The liquid crystal driving IC 1 applies a scanning voltage for each row to either the first electrode 9a or the second electrode 9b, and further applies a data voltage based on the display image to the other of the electrodes for each pixel. By applying the voltage to the light, the light passing through each pixel portion selected by the application of both voltages is modulated, so that an image such as a character or a number is displayed outside the substrate 4a or 4b.
[0027]
The active surface 1a of the liquid crystal driving IC 1 used in the present embodiment is as shown in FIG. In this IC1, a plurality of bumps 2 are arranged in a rectangular array pattern, and as a result, a pair of terminal rows facing each other, that is, bump rows R1 and R2 are formed. In the IC 1 of the present embodiment, in particular, the center line L0 of the outer shape G and the center line L1 between the bump row R1 and the bump row R2 are displaced from each other.
[0028]
When the liquid crystal driving IC 1 is mounted in the IC mounting region J of the overhanging portion 4c of the substrate 4a as described above, in this embodiment, as shown in FIG. 2, the pressing center line L2 of the pressure head 22 is used for driving the liquid crystal. It is set so that the liquid crystal driving IC 1 is pressed by the pressure head 22 in a state that substantially coincides with the center line L 1 between the bump rows, not the outer shape center line L 0 of the IC 1.
[0029]
Here, the pressing center line L2 of the pressing head 22 can be the center line of the pressing surface of the pressing head 22, or can be a line on which the pressing force of the pressing head 22 acts intensively. it can.
[0030]
As described above, by aligning the pressing center line L2 of the pressure head 22 with the center line L1 between the bump rows of the liquid crystal driving IC 1, the center line L1 between the bump rows and the outer shape of the liquid crystal driving IC 1 as in this embodiment. Even when the center line L0 is displaced from each other, that is, even when the bump 2 of the IC 1 is unevenly distributed with respect to the outer center line L0 of the IC 1, the applied pressure, that is, the pressure bonding force from the pressure head 1 is applied to each bump. 2 can always be added almost uniformly, and as a result, the connection reliability of the bumps 2 can be improved.
[0031]
(Other embodiments)
The present invention has been described with reference to the preferred embodiments. However, the present invention is not limited to the embodiments, and various modifications can be made within the scope of the invention described in the claims.
[0032]
For example, in the embodiment of FIG. 1, the case where an IC chip is mounted on one of a pair of substrates constituting the liquid crystal panel is taken as an example, but any substrate other than the substrate of the liquid crystal panel, for example, a resistor, a capacitor, a transistor The present invention can also be applied to the case where an IC chip is mounted on a normal wiring board on which other various electronic chip components are mounted. Therefore, as a matter of course, the IC chip is not limited to the liquid crystal driving IC, and can be an IC chip having an arbitrary circuit configuration.
[0033]
Further, FIG. 1 shows an example in which one IC chip is mounted on a substrate, but the present invention can be applied to a case where a plurality of IC chips are mounted.
[0034]
In FIG. 1, ACF is used as an adhesive material, but instead of this, various non-conductive adhesives such as epoxy, acrylic and urethane, isotropic conductive pastes such as silver paste, ACA (Anisotropic Conductive Adhesive) in which conductive particles are dispersed in a paste adhesive can also be used as an adhesive material.
[0035]
【The invention's effect】
According to the method for connecting an IC chip and the method for manufacturing a liquid crystal device according to the present invention, the pressing center of the pressure head always coincides with the center line between the terminal rows of the IC side terminals. The pressing force applied to the side terminals is accurately and substantially uniform with respect to each of all the IC side terminals, so that the connection reliability of the conductive connection between the IC side terminals and the board side terminals can be maintained high.
[Brief description of the drawings]
FIG. 1 is a perspective view showing an embodiment of an IC chip connection method and a liquid crystal device manufacturing method according to the present invention.
2 is a cross-sectional view showing a cross-sectional structure of a liquid crystal panel or the like according to the line II-II in FIG.
FIG. 3 is a plan view showing an active surface of an example of an IC chip.
FIG. 4 is a plan view showing an example of a conventional IC chip.
[Explanation of symbols]
1 Liquid crystal drive IC
1a Active surface 2 Bump (IC side terminal)
3 Liquid crystal panel 4a, 4b Substrate 4c Substrate overhanging portion 6 Substrate side terminal 7 Sealing material 7a Liquid crystal injection port 9a, 9b Electrode 14 Liquid crystal 17 ACF (adhesive material)
22 Pressure head 23 Table G IC chip outline J IC mounting area L0 IC chip outline center line L1 Bump row center line L2 of IC chip Press center line of pressure head

Claims (8)

ICチップに設けられたIC側端子と、基板に設けられた基板側端子とを導電接続するICチップの接続方法であって、
前記IC側端子は互いに対向する一対の端子列を形成し且つその端子列間の中心線は前記ICチップの外形中心線からずれている構造のICチップの接続方法において、
前記ICチップと前記基板との間に接着用材料を介在させ、
加圧ヘッドの押圧中心線が前記IC側端子列間の中心線にほぼ一致する状態でその加圧ヘッドによって前記ICチップを押圧する
ことを特徴とするICチップの接続方法。
An IC chip connection method for conductively connecting an IC side terminal provided on an IC chip and a substrate side terminal provided on a substrate,
In the IC chip connection method, the IC side terminals form a pair of terminal rows facing each other, and the center line between the terminal rows is deviated from the outer shape center line of the IC chip.
An adhesive material is interposed between the IC chip and the substrate,
A method of connecting IC chips, wherein the IC chip is pressed by the pressure head in a state where the pressing center line of the pressure head substantially coincides with the center line between the IC side terminal rows.
請求項1において、前記接着用材料は非導電性接着剤であり、前記IC側端子と前記基板側端子とは互いに直接に接触することを特徴とするICチップの接続方法。2. The IC chip connection method according to claim 1, wherein the adhesive material is a non-conductive adhesive, and the IC side terminal and the substrate side terminal are in direct contact with each other. 請求項1において、前記接着用材料は樹脂フィルムの中に導電粒子を分散させて成る異方性導電膜であり、前記IC側端子と前記基板側端子とは前記導電粒子を通して導電接続することを特徴とするICチップの接続方法。2. The adhesive material according to claim 1, wherein the adhesive material is an anisotropic conductive film in which conductive particles are dispersed in a resin film, and the IC side terminal and the substrate side terminal are conductively connected through the conductive particles. An IC chip connection method as a feature. 請求項1において、前記接着用材料は等方性導電ペーストであり、前記IC側端子と前記基板側端子とはその等方性導電ペーストを通して導電接続することを特徴とするICチップの接続方法。2. The IC chip connection method according to claim 1, wherein the adhesive material is an isotropic conductive paste, and the IC side terminal and the substrate side terminal are conductively connected through the isotropic conductive paste. ICチップに設けられたIC側端子と、基板に設けられた基板側端子とを導電接続する液晶装置の製造方法であって、
前記IC側端子は互いに対向する一対の端子列を形成し且つその端子列間の中心線は前記ICチップの外形中心線からずれている構造の液晶装置の製造方法において、
前記ICチップと前記基板との間に接着用材料を介在させ、
加圧ヘッドの押圧中心線が前記IC側端子列間の中心線にほぼ一致する状態でその加圧ヘッドによって前記ICチップを押圧する
ことを特徴とする液晶装置の製造方法。
A method of manufacturing a liquid crystal device in which an IC side terminal provided on an IC chip and a substrate side terminal provided on a substrate are conductively connected,
In the method of manufacturing a liquid crystal device having a structure in which the IC side terminals form a pair of terminal rows facing each other and the center line between the terminal rows is deviated from the outer shape center line of the IC chip.
An adhesive material is interposed between the IC chip and the substrate,
A method of manufacturing a liquid crystal device, wherein the IC chip is pressed by the pressure head in a state where the pressing center line of the pressure head substantially coincides with the center line between the IC side terminal rows.
請求項5において、前記接着用材料は非導電性接着剤であり、前記IC側端子と前記基板側端子とは互いに直接に接触することを特徴とする液晶装置の製造方法。6. The method of manufacturing a liquid crystal device according to claim 5, wherein the adhesive material is a non-conductive adhesive, and the IC side terminal and the substrate side terminal are in direct contact with each other. 請求項5において、前記接着用材料は樹脂フィルムの中に導電粒子を分散させて成る異方性導電膜であり、前記IC側端子と前記基板側端子とは前記導電粒子を通して導電接続することを特徴とする液晶装置の製造方法。6. The adhesive material according to claim 5, wherein the adhesive material is an anisotropic conductive film in which conductive particles are dispersed in a resin film, and the IC side terminal and the substrate side terminal are conductively connected through the conductive particles. A method for manufacturing a liquid crystal device. 請求項5において、前記接着用材料は等方性導電ペーストであり、前記IC側端子と前記基板側端子とはその等方性導電ペーストを通して導電接続することを特徴とする液晶装置の製造方法。6. The method of manufacturing a liquid crystal device according to claim 5, wherein the adhesive material is an isotropic conductive paste, and the IC side terminal and the substrate side terminal are conductively connected through the isotropic conductive paste.
JP14971299A 1999-05-28 1999-05-28 IC chip connection method and liquid crystal device manufacturing method Expired - Fee Related JP3649042B2 (en)

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