JP3644446B2 - 窒化物半導体素子 - Google Patents

窒化物半導体素子 Download PDF

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Publication number
JP3644446B2
JP3644446B2 JP2002232400A JP2002232400A JP3644446B2 JP 3644446 B2 JP3644446 B2 JP 3644446B2 JP 2002232400 A JP2002232400 A JP 2002232400A JP 2002232400 A JP2002232400 A JP 2002232400A JP 3644446 B2 JP3644446 B2 JP 3644446B2
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JP
Japan
Prior art keywords
layer
nitride semiconductor
gan
composition
active layer
Prior art date
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Expired - Fee Related
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JP2002232400A
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English (en)
Japanese (ja)
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JP2003060314A (ja
JP2003060314A5 (enExample
Inventor
勲 木戸口
信之 大塚
雄三郎 伴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2002232400A priority Critical patent/JP3644446B2/ja
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Application granted granted Critical
Publication of JP3644446B2 publication Critical patent/JP3644446B2/ja
Publication of JP2003060314A5 publication Critical patent/JP2003060314A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP2002232400A 2002-08-09 2002-08-09 窒化物半導体素子 Expired - Fee Related JP3644446B2 (ja)

Priority Applications (1)

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JP2002232400A JP3644446B2 (ja) 2002-08-09 2002-08-09 窒化物半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002232400A JP3644446B2 (ja) 2002-08-09 2002-08-09 窒化物半導体素子

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP07738699A Division JP3454181B2 (ja) 1999-03-23 1999-03-23 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2003060314A JP2003060314A (ja) 2003-02-28
JP3644446B2 true JP3644446B2 (ja) 2005-04-27
JP2003060314A5 JP2003060314A5 (enExample) 2005-06-23

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ID=19196306

Family Applications (1)

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JP2002232400A Expired - Fee Related JP3644446B2 (ja) 2002-08-09 2002-08-09 窒化物半導体素子

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JP (1) JP3644446B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4482490B2 (ja) * 2005-06-13 2010-06-16 古河機械金属株式会社 Ｉｉｉ族窒化物半導体基板およびｉｉｉ族窒化物半導体基板の製造方法
JP5151139B2 (ja) * 2006-12-19 2013-02-27 住友電気工業株式会社 半導体発光素子
EP2741381B1 (en) 2012-12-06 2020-05-06 Nichia Corporation Semiconductor laser element
JP6706805B2 (ja) * 2015-06-08 2020-06-10 パナソニックＩｐマネジメント株式会社 半導体レーザ装置

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JP2003060314A (ja) 2003-02-28

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