JP3641974B2 - Power converter - Google Patents

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Publication number
JP3641974B2
JP3641974B2 JP13144799A JP13144799A JP3641974B2 JP 3641974 B2 JP3641974 B2 JP 3641974B2 JP 13144799 A JP13144799 A JP 13144799A JP 13144799 A JP13144799 A JP 13144799A JP 3641974 B2 JP3641974 B2 JP 3641974B2
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JP
Japan
Prior art keywords
wide conductor
snubber
conductor
self
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP13144799A
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Japanese (ja)
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JP2000324800A (en
Inventor
博利 兼田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Device Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Device Technology Co Ltd filed Critical Fuji Electric Device Technology Co Ltd
Priority to JP13144799A priority Critical patent/JP3641974B2/en
Publication of JP2000324800A publication Critical patent/JP2000324800A/en
Application granted granted Critical
Publication of JP3641974B2 publication Critical patent/JP3641974B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Inverter Devices (AREA)

Description

【0001】
【発明の属する技術分野】
この発明は、自己消弧型半導体素子を適用したインバータ装置等の電力変換装置に関するものであり、特に自己消弧型半導体素子の保護回路であるスナバ回路の構成要素の形状に関して、スナバ回路の耐電圧特性を向上させたスナバ回路の構造に関するものである。
【0002】
【従来の技術】
図4は、例えば特開平8ー126302号公報に示された従来の電力変換装置の、特に自己消弧型半導体素子のスナバ回路の配置および接続方法を示す側面図である。
【0003】
図4において、自己消弧型半導体素子1の例として、GTO(Gate Turnーoff)サイリスタ(以下GTOと略す)を取り上げるが、電極面が平型(圧接が可能である)であれば、逆導通型GTOサイリスタ、IGBT、SIサイリスタ、SIC等にも適用できる。なお、フリーホイールダイオード、スナバ抵抗あるいはスナバエネルギー回生回路などに用いられる追加的な構成要素は省略している。1はGTO、2は平型のスナバダイオード、3はスナバコンデンサ、10はGTO1の陽極に圧接された冷却フィン(導体でも良い)、11はGTO1の陰極に圧接された冷却フィン(導体でも良い)、12、13はスナバコンデンサ3の電極、14は冷却フィン10(GTO1の陽極の延長)とスナバダイオード2の陽極とを接続する帯状の幅広導体、15はスナバダイオード2の陰極とスナバコンデンサ3の電極12を接続する帯状の幅広導体、16はスナバコンデンサ3の電極13と冷却フィン11(GTO1の陰極の延長)を接続する帯状の幅広導体である。
【0004】
このような構成の電力変換装置において、平行な位置関係にあるスナバダイオード2の陰極とスナバコンデンサ3の電極12を接続する帯状の幅広導体15と、スナバコンデンサ3の電極13と冷却フィン11を接続する帯状の幅広導体16との間隙を、スナバ回路のインダクタンスを低減するために、可能な限り小さくとるようにしている。
【0005】
【発明が解決しようとする課題】
従来の電力変換装置は以上のように構成されているので、例えば電気定格6kV、6kA以上のGTOを適用し、直流電圧1.5kVの電力変換装置に使用する場合でも、日本工業規格JIS C 0704ー1995に記載があるように、空間距離を14mm以上確保する必要があり、幅広導体15と幅広導体16との間隔を14mm以上とするか、もしくは、幅広導体15と幅広導体16との間に絶縁体を介在させ、前記絶縁体の大きさを幅広導体15または幅広導体16のいづれか大きい方よりも大きくし、さらに絶縁体の厚さも考慮して、空間距離を14mm以上確保するようにしていた。直流電圧を更に高くして使用する場合には、この空間距離を更に広くとる必要が生じる。
【0006】
さて、幅広導体15と幅広導体16との間に絶縁体を介在させ、幅広導体15と幅広導体16の間隔を狭くしようとした時、使用する絶縁体の絶縁破壊強さの大きいものを選択する必要があるとともに、幅広導体15と幅広導体16が幾何学的に平板コンデンサを形成することになるので、幅広導体15および幅広導体16の端部には、不平等電界が生じ、端部に強電界部分が発生し、部分放電が発生する可能性が生じる。部分放電の発生は、電力変換装置の制御回路を誤動作させたり、絶縁体の絶縁劣化を生じさせる可能性があるなどの問題があった。
本発明は上記の課題を解決するためになされたもので、電力変換装置のスナバ回路の耐電圧特性の向上をはかることを目的とする。
【0007】
【課題を解決するための手段】
上記の課題を解決するため、本発明は、平行に配置された対向する幅広導体(スナバダイオードの陰極とスナバコンデンサの電極を接続する幅広導体、およびスナバコンデンサの電極と自己消弧型半導体素子の陰極を接続する幅広導体)のそれぞれの端部に、相対する方向に面取り、Rをとるもしくは曲率を設けることとする。
【0008】
【発明の実施の形態】
図1は、本発明の第1の実施例による幅広導体15および幅広導体16の斜視図である。幅広導体のそれぞれの端部に、相対する方向に面取りを施したものである。
【0009】
図2は、本発明の第2の実施例による幅広導体15および幅広導体16の斜視図である。幅広導体のそれぞれの端部に、相対する方向にRをつけたものである。
図3は、本発明の第3の実施例による幅広導体15および幅広導体16の斜視図である。幅広導体のそれぞれの端部に、相対する方向に曲率を設けたものである。
【0010】
【発明の効果】
平行に配置された対向する幅広導体のそれぞれの端部に、相対する方向に面取り、Rをとるもしくは曲率を設けることにより、端部の電界が緩和され、部分放電の発生を防止することができる。
【図面の簡単な説明】
【図1】この発明の第1の実施例を示す幅広導体の斜視図。
【図2】この発明の第2の実施例を示す幅広導体の斜視図。
【図3】この発明の第3の実施例を示す幅広導体の斜視図。
【図4】従来のスナバ回路構造の側面図。
【符号の説明】
1…自己消弧型半導体素子、2…スナバダイオード、3…スナバコンデンサ、10,11…冷却フィン、12,13…スナバコンデンサ電極、14,15,16…幅広導体。
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a power conversion device such as an inverter device to which a self-extinguishing semiconductor element is applied, and in particular, with respect to the shape of a component of the snubber circuit that is a protection circuit for the self-extinguishing semiconductor element, The present invention relates to a snubber circuit structure with improved voltage characteristics.
[0002]
[Prior art]
FIG. 4 is a side view showing an arrangement and connection method of a snubber circuit of a conventional power conversion device disclosed in, for example, Japanese Patent Laid-Open No. 8-126302, in particular, a self-extinguishing semiconductor element.
[0003]
In FIG. 4, a GTO (Gate Turn-off) thyristor (hereinafter abbreviated as GTO) is taken up as an example of the self-extinguishing semiconductor element 1, but if the electrode surface is a flat type (pressure contact is possible), the reverse will occur. The present invention can also be applied to a conductive GTO thyristor, IGBT, SI thyristor, SIC and the like. Note that additional components used in a free wheel diode, a snubber resistor, a snubber energy regeneration circuit, and the like are omitted. 1 is a GTO, 2 is a flat snubber diode, 3 is a snubber capacitor, 10 is a cooling fin pressed against the anode of the GTO 1 (may be a conductor), 11 is a cooling fin pressed against the cathode of the GTO 1 (may be a conductor) , 12 and 13 are electrodes of the snubber capacitor 3, 14 is a strip-shaped wide conductor connecting the cooling fin 10 (extension of the anode of the GTO 1) and the anode of the snubber diode 2, and 15 is the cathode of the snubber diode 2 and the snubber capacitor 3. A strip-shaped wide conductor for connecting the electrode 12, 16 is a strip-shaped wide conductor for connecting the electrode 13 of the snubber capacitor 3 and the cooling fin 11 (extension of the cathode of the GTO 1).
[0004]
In the power converter having such a configuration, the strip-shaped wide conductor 15 that connects the cathode of the snubber diode 2 and the electrode 12 of the snubber capacitor 3 that are in a parallel positional relationship, and the electrode 13 of the snubber capacitor 3 and the cooling fin 11 are connected. In order to reduce the inductance of the snubber circuit, the gap with the strip-shaped wide conductor 16 is made as small as possible.
[0005]
[Problems to be solved by the invention]
Since the conventional power converter is configured as described above, even when a GTO having an electrical rating of 6 kV, 6 kA or more is applied and used for a power converter having a DC voltage of 1.5 kV, for example, Japanese Industrial Standard JIS C 0704 -As described in 1995, it is necessary to secure a spatial distance of 14 mm or more, and the interval between the wide conductor 15 and the wide conductor 16 is 14 mm or more, or between the wide conductor 15 and the wide conductor 16. An insulator is interposed, and the size of the insulator is made larger than either the wide conductor 15 or the wide conductor 16, and the thickness of the insulator is also taken into consideration, and a spatial distance of 14 mm or more is ensured. . When the DC voltage is used at a higher level, it is necessary to further increase the spatial distance.
[0006]
Now, when an insulator is interposed between the wide conductor 15 and the wide conductor 16 and an attempt is made to narrow the gap between the wide conductor 15 and the wide conductor 16, the insulator to be used having a high dielectric breakdown strength is selected. In addition, since the wide conductor 15 and the wide conductor 16 geometrically form a flat plate capacitor, an unequal electric field is generated at the ends of the wide conductor 15 and the wide conductor 16 and strong at the ends. An electric field part is generated, and a partial discharge may occur. The occurrence of the partial discharge has problems such as malfunctioning of the control circuit of the power conversion device and the possibility of causing insulation deterioration of the insulator.
The present invention has been made to solve the above-described problems, and an object thereof is to improve the withstand voltage characteristics of the snubber circuit of the power converter.
[0007]
[Means for Solving the Problems]
In order to solve the above-described problems, the present invention is directed to a parallel wide conductor (a wide conductor connecting a snubber diode cathode and a snubber capacitor electrode, and a snubber capacitor electrode and a self-extinguishing semiconductor element). Each end portion of the wide conductor connecting the cathode) is chamfered in the opposite direction to have R or curvature.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a perspective view of a wide conductor 15 and a wide conductor 16 according to a first embodiment of the present invention. Each end of the wide conductor is chamfered in the opposite direction.
[0009]
FIG. 2 is a perspective view of the wide conductor 15 and the wide conductor 16 according to the second embodiment of the present invention. R is attached to each end of the wide conductor in the opposite direction.
FIG. 3 is a perspective view of the wide conductor 15 and the wide conductor 16 according to the third embodiment of the present invention. Curvature is provided in the opposite direction at each end of the wide conductor.
[0010]
【The invention's effect】
By chamfering each end of the wide conductors arranged in parallel in opposite directions and taking R or providing curvature, the electric field at the end can be relaxed and the occurrence of partial discharge can be prevented. .
[Brief description of the drawings]
FIG. 1 is a perspective view of a wide conductor according to a first embodiment of the present invention.
FIG. 2 is a perspective view of a wide conductor showing a second embodiment of the present invention.
FIG. 3 is a perspective view of a wide conductor showing a third embodiment of the present invention.
FIG. 4 is a side view of a conventional snubber circuit structure.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Self-extinguishing type | mold semiconductor element, 2 ... Snubber diode, 3 ... Snubber capacitor, 10, 11 ... Cooling fin, 12, 13 ... Snubber capacitor electrode, 14, 15, 16 ... Wide conductor.

Claims (1)

自己消弧型半導体素子と、前記自己消弧型半導体素子に接続されるスナバ回路と、前記自己消弧型半導体素子、前記スナバ回路の相互間を接続する複数の帯状の幅広導体とを備え、平行に配置され対向する前記幅広導体の対向する端部に、それぞれ面取りもしくは曲率を設けたことを特徴とする電力変換装置。A self-extinguishing semiconductor element, a snubber circuit connected to the self-extinguishing semiconductor element, and a plurality of strip-shaped wide conductors connecting the self-extinguishing semiconductor element and the snubber circuit, A power conversion device, wherein chamfers or curvatures are respectively provided at opposing ends of the wide conductors arranged in parallel.
JP13144799A 1999-05-12 1999-05-12 Power converter Expired - Fee Related JP3641974B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13144799A JP3641974B2 (en) 1999-05-12 1999-05-12 Power converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13144799A JP3641974B2 (en) 1999-05-12 1999-05-12 Power converter

Publications (2)

Publication Number Publication Date
JP2000324800A JP2000324800A (en) 2000-11-24
JP3641974B2 true JP3641974B2 (en) 2005-04-27

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Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064783B2 (en) * 1993-12-24 2000-07-12 住友電装株式会社 Method of manufacturing connection conductor for high-voltage / high-current power distribution device of electric vehicle
JP3213671B2 (en) * 1994-10-26 2001-10-02 三菱電機株式会社 Power converter
JP3231202B2 (en) * 1994-12-09 2001-11-19 東京エレクトロン株式会社 Plasma processing equipment
JPH10146043A (en) * 1996-11-14 1998-05-29 Toshiba Corp Thyristor valve

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