KR102474608B1 - Power module using stack structure and 3 phase driving module for electric vehicle using the same - Google Patents

Abstract

The present invention relates to a three-phase driving module for an electric vehicle that can be realized by extending a power module using a laminated structure. a metal substrate on which power is output; a high-side circuit disposed below the metal substrate, electrically connected to the metal substrate, and connected to a (+) terminal of an external DC power supply; and a low side circuit disposed on an upper side of the metal substrate, electrically connected to the metal substrate, and connected to a (-) terminal of the DC power supply.

Description

Power module using a layered structure and a three-phase driving module for an electric vehicle using the same

The present invention relates to a power module using a laminated structure and a three-phase driving module for an electric vehicle using the same, and more particularly, to form a laminated structure with a high-side circuit and a low-side circuit sandwiched between a metal substrate as a reference inside the module By doing so, it relates to a power module using a laminated structure for implementing a half-bridge converter that converts DC voltage to AC voltage.

In addition, the present invention relates to a three-phase driving module for an electric vehicle that can be implemented by extending a power module using a laminated structure.

Power semiconductors are inverter devices with a function of converting direct current into alternating current and supplying them, and their application range is increasing in power devices, industrial devices, information communication devices, household devices, as well as mobile devices and electric vehicles.

In recent years, power semiconductor devices having high breakdown voltage and allowable current, low switch-on resistance characteristics, and high-speed switching characteristics have been studied.

Since silicon (Si) is mainly used as the main semiconductor material applied to power semiconductors, it is the most effective when considering major operating conditions and economic aspects.

In particular, when considering application to eco-friendly vehicles, power semiconductors need to be modularized to satisfy high current specifications. Accordingly, research is underway to improve the power density of power semiconductors in a modularized limited space.

In the case of HEV (Hybrid Electric Vehicle) or PHEV (Plug-in HEV), the need for miniaturization of the inverter is more required than that of BEV (Battery Electric Vehicle) by utilizing the engine part and the motor part together in the engine room space.

However, it is possible to increase power density through miniaturization of passive elements such as capacitors and inductors through an increase in driving frequency and improvement in cooling performance.

However, the operating temperature range of the passive element is limited, and cooling performance improvement to compensate for this causes an increase in the output of the water pump. This causes additional energy loss to offset the advantage of miniaturization of the passive element.

Accordingly, in order to improve the power density of the power module, research on structural design capable of miniaturizing the module size is being actively conducted, and through this, the power density of the inverter can be fundamentally improved.

On the other hand, the case type power module is widely adopted. Such a power module is configured in a form in which a substrate and a device are located in a case, and components inside the module are protected by filling the case with gel. By the way, the case-type power module uses one side to cool the device and mainly applies a power supply method using a wire, so improvement is required in terms of structure and material design to cope with high power specifications.

In order to improve this, the power module has a mold-type cooling structure on both sides. The molded power module can realize the miniaturization of the mounting area and increase the cooling performance by applying the double-sided cooling using the substrate on both sides of the element in the existing single-sided cooling method. In addition, in the molded power module, problems of heat generation and material durability due to the passage of a large current can be improved by replacing wires in the source (emitter) portion of the device with a spacer.

However, the molded power module has a structure in which power devices are arranged in a horizontal direction. In this structure, since the area of the terminal and gate pin of the module is large, it is difficult to reduce the area of the gate board to a corresponding level and it is difficult to reduce the parasitic inductance component, which may cause module switching loss.

Therefore, when the molded power module is mounted in an inverter, it is necessary to propose a structure capable of reducing the volume and material so as to improve the power density of the module and have cost competitiveness.

Republic of Korea Patent Registration No. 10-0981335 (registered on September 3, 2010)

An object of the present invention is to implement a half-bridge converter that converts DC voltage to AC voltage by forming a stacked structure with a high-side circuit and a low-side circuit interposed with a metal substrate as a reference inside a module, using a stacked structure. The power module is provided.

In addition, another object of the present invention is to provide a three-phase driving module for an electric vehicle that can be implemented by extending a power module using a laminated structure.

A power module using a laminated structure according to an embodiment of the present invention includes, as an intermediate substrate of the laminated structure, a metal substrate to which AC power of a specific phase is output; a high-side circuit disposed below the metal substrate, electrically connected to the metal substrate, and connected to a (+) terminal of an external DC power supply; and a low side circuit disposed on an upper side of the metal substrate, electrically connected to the metal substrate, and connected to a (-) terminal of the DC power supply.

The high-side circuit forms an internal stacked structure in the order of a first insulating circuit board, a first switching element, a first spacer, and the metal substrate, and the low-side circuit includes the metal substrate, a second switching element, and a second An internal stacked structure may be formed in the order of the spacer and the second insulating circuit board.

The first switching element and the second switching element may be connected in a cascode to form a half bridge circuit and convert the DC power to the AC power through a switching operation.

The first switching element and the second switching element may be selected from among a Metal Oxide Semiconductor Field Effect transistor (MOSFET), a Superjunction MOSFET, an Insulated Gate Bipolar Transistor (IGBT), a Junction Field Effect Transistor (JFET), and a High Electron Mobility Transistor (HEMT). can be either

In the first switching element and the second switching element, the first drain of the first switching element is directly connected to the first insulating circuit board and connected to the (+) terminal of the DC power supply, and the second switching element A second source of is connected to the second insulating circuit board through the second spacer and connected to the (-) terminal of the DC power supply, and the first source of the first switching element is connected to the metal through the first spacer. It may be connected to the lower surface of the substrate, and the second drain of the second switching element may be directly connected to the upper surface of the metal substrate.

The first gate of the first switching element is connected to the gate pad of the first insulating circuit board through a first wire to form an external terminal, and the second gate of the second switching element is connected to a second wire. It may be connected to the gate pad of the second insulating circuit board through the terminal to form an external terminal.

The first spacer and the second spacer may be high heat dissipation/high conductivity conductors.

The first insulating circuit board and the second insulating circuit board may form a metal pattern on a ceramic substrate.

The metal pattern may be obtained by plating a copper pattern with one of nickel, gold, and silver.

The metal substrate may be made of any one of silver, copper, gold, aluminum, magnesium, molybdenum, tungsten, and nickel, or an alloy of two or more.

According to an embodiment, a molding member for molding the stacked structure of the high-side circuit, the metal substrate, and the low-side circuit may be further included.

The molding member may be obtained by adding silicon oxide or aluminum oxide particles to an epoxy molding compound (EMC).

Meanwhile, a three-phase driving module for an electric vehicle according to an embodiment of the present invention includes first to third power modules arranged in parallel in a lateral direction; a motor to which each of the three-phase AC power output from the first to third power modules is input; a DC connector supplying common DC power to the first to third power modules; and a battery connected to the DC connector, wherein each of the first through third power modules includes, as an intermediate substrate of a laminated structure, a metal substrate to which AC power of a specific phase is output; a high side circuit disposed below the metal substrate, electrically connected to the metal substrate, and connected to the (+) terminal of the DC power supply; and a low side circuit disposed on an upper side of the metal substrate, electrically connected to the metal substrate, and connected to a (-) terminal of the DC power supply.

According to the present invention, a half-bridge converter that converts DC voltage to AC voltage can be implemented by forming a stacked structure with a high-side circuit and a low-side circuit interposed with a metal substrate as a reference inside the module.

In addition, since the present invention can reduce the use of an insulating circuit board by approximately 50% by stacking the high side region and the low side region inside the module, cost can be reduced compared to the existing double-sided cooling module.

In addition, in the present invention, by implementing the power module in a multilayer structure, not only can a volume reduction effect be obtained, but also power density can be improved by about 40% compared to the conventional one.

In addition, since the present invention can achieve high integration by reducing the area of the gate board to a corresponding level by reducing the area of the gate pin region of the power module, the power density of the board portion increases, and the parasitic inductance due to the minimization of the board pattern components can be reduced.

In addition, the present invention can minimize the parasitic inductance component by applying the vertical arrangement structure of the module PN terminal.

In addition, the present invention expands the power module in the lateral direction so that it can be applied not only to the half-bridge structure (2in1), but also to the full-bridge structure (4in1) and the three-phase driving module (6in1).

1 is a perspective view of a power module using a laminated structure according to an embodiment of the present invention;
2 is an AA′ cross-sectional view of the power module of FIG. 1;
3 is a diagram showing a circuit for the power module of FIG. 1;
4 is a diagram showing the results of comparing parasitic inductances according to terminal arrangement structures;
5 is a view showing a case where the power module of FIG. 1 is implemented as a three-phase driving power module;
6 is a diagram illustrating a circuit in which the three-phase driving power module of FIG. 5 is connected to a motor.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, detailed descriptions of well-known functions or configurations that may obscure the gist of the present invention will be omitted in the following description and accompanying drawings. In addition, it should be noted that the same components are indicated by the same reference numerals throughout the drawings as much as possible.

The terms or words used in this specification and claims described below should not be construed as being limited to ordinary or dictionary meanings, and the inventors are appropriately defined as terms for describing their invention in the best way. It should be interpreted as meaning and concept consistent with the technical idea of the present invention based on the principle that it can be done.

Therefore, the embodiments described in this specification and the configurations shown in the drawings are only one of the most preferred embodiments of the present invention, and do not represent all of the technical ideas of the present invention. It should be understood that there may be equivalents and variations.

In the accompanying drawings, some components are exaggerated, omitted, or schematically illustrated, and the size of each component does not entirely reflect the actual size. The present invention is not limited by the relative sizes or spacings drawn in the accompanying drawings.

When it is said that a certain part "includes" a certain component throughout the specification, it means that it may further include other components without excluding other components unless otherwise stated. In addition, when a part is said to be "connected" to another part, this includes not only the case of being "directly connected" but also the case of being "electrically connected" with another element interposed therebetween.

Singular expressions include plural expressions unless the context clearly dictates otherwise. Terms such as "comprise" or "having" are intended to indicate that a feature, number, step, operation, component, part, or combination thereof described in the specification exists, but that one or more other features, numbers, or steps are present. However, it should be understood that it does not preclude the possibility of existence or addition of operations, components, parts, or combinations thereof.

Also, the term "unit" used in the specification means a hardware component such as software, FPGA or ASIC, and "unit" performs certain roles. However, "unit" is not meant to be limited to software or hardware. A “unit” may be configured to reside in an addressable storage medium and may be configured to reproduce on one or more processors. Thus, as an example, “unit” can refer to components such as software components, object-oriented software components, class components and task components, processes, functions, properties, procedures, subroutines, segments of program code, drivers, firmware, microcode, circuitry, data, databases, data structures, tables, arrays and variables. Functionality provided within components and "parts" may be combined into fewer components and "parts" or further separated into additional components and "parts".

Hereinafter, with reference to the accompanying drawings, embodiments of the present invention will be described in detail so that those skilled in the art can easily carry out the present invention. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein. And in order to clearly explain the present invention in the drawings, parts irrelevant to the description are omitted, and similar reference numerals are attached to similar parts throughout the specification.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a perspective view of a power module using a laminated structure according to an embodiment of the present invention, FIG. 2 is an AA' cross-sectional view of the power module of FIG. 1, and FIG. 3 is a circuit of the power module of FIG. is a drawing showing

As shown in FIGS. 1 and 2, a power module (hereinafter referred to as a 'power module', 100) using a laminated structure according to an embodiment of the present invention has a high level with respect to the metal substrate 30 inside the module. By forming a stacked structure with a high side circuit 10 and a low side circuit 20 interposed therebetween, a half bridge converter that converts DC voltage to AC voltage can be implemented. can

The power module 100 is subjected to a molding process in which a high heat dissipation molding member 1 is used to protect internal circuits of the laminated structure from the external environment. Here, the high heat dissipation molding member 1 mainly uses an epoxy molding compound (EMC), and silicon oxide (SiO 2 ) or aluminum oxide (Al 2 O 3 ) particles may be added to improve heat dissipation performance.

The power module 100 is connected to an external DC power source, has a (+) terminal and a (-) terminal to which the DC power input is formed on one side, and is connected to an external load (eg, a motor) to specify a specific An AC output terminal (P) through which phase AC power is output is formed on the other side. In addition, on the other side of the power module 100, along with the AC output terminal P, the gate terminals G1 and G2 of the switching elements built into the module are formed.

The high side circuit 10 is disposed in the area where the (+) terminal of the power module 100 is formed, and the low side circuit 20 is disposed in the area where the (-) terminal of the power module 100 is formed. do. That is, the high side circuit 10 includes the first switching element 11 and the first spacer 13 between the metal substrate 30 and the first insulating circuit board 17, and the low side circuit 20 A second switching element 21 and a second spacer 23 are included between the metal substrate 30 and the second insulating circuit board 27 .

Referring to FIG. 2 , the high side circuit 10 is disposed on the lower side with respect to the metal substrate 30 , and the low side circuit 20 is disposed on the upper side with respect to the metal substrate 30 . That is, in the power module 100, the high-side circuit 10, the metal substrate 30, and the low-side circuit 20 are sequentially stacked.

In addition, the high side circuit 10 forms an internal stacked structure in the order of the first insulating circuit board 17, the first switching device 11, the first spacer 13, and the metal substrate 30, and the low side circuit (20) forms an internal stacked structure in the order of the metal substrate 30, the second switching element 21, the second spacer 23, and the second insulating circuit board 27.

Hereinafter, detailed configurations of the high-side circuit 10 and the low-side circuit 20 will be described.

First, the first switching element 11 and the second switching element 21 are semiconductor power elements that perform a function of converting DC power supplied from the outside into AC power through a switching operation. The first switching element 11 and the second switching element 21 may be, for example, a Metal Oxide Semiconductor Field Effect transistor (MOSFET), a Superjunction MOSFET, an Insulated Gate Bipolar Transistor (IGBT), a Junction Field Effect Transistor (JFET), A High Electron Mobility Transistor (HEMT) or the like may be applied, and may be made of any one of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN).

However, here, for convenience of description, it will be described assuming that the first switching device 11 and the second switching device 21 are N-MOSFETs. Accordingly, each terminal of the first switching element 11 and the second switching element 21 will be collectively referred to as a drain, a gate, and a source in the case of an N-MOSFET. Those skilled in the art can easily understand that this corresponds to a collector, a base, and an emitter in the case of a bipolar transistor.

Meanwhile, referring to FIGS. 2 and 3 , circuit configurations of the first switching element 11 and the second switching element 21 are as follows.

First, the first switching element 11 and the second switching element 21 form a half bridge (2in1) circuit connected by a cascode. The first switching element 11 includes a first drain D1, a first gate G1, and a first source S1, and the second switching element 21 has a second drain D2, a second It includes a gate (G2) and a second source (S2).

In addition, the first drain D1 of the first switching element 11 is connected to the DC power supply VDD supplied from the outside of the module. That is, the first drain D1 of the first switching device 11 is directly connected to the first insulating circuit board 17, and DC power (VDD) supplied from the outside of the module through the first insulating circuit board 17 It is connected to [that is, the (+) terminal of the DC power supply].

Also, the second source S2 of the second switching element 21 is connected to ground. That is, the second source S2 of the second switching element 21 is connected to the second insulating circuit board 27 through the second spacer 23, and grounded through the second insulating circuit board 27 (that is, , (-) terminal of DC power supply].

As such, the first drain D1 of the first switching element 11 is connected to the (+) terminal of the DC power, and the second source S2 of the second switching element 21 is connected to the (-) terminal of the DC power. connected to the terminal

Meanwhile, the first source S1 of the first switching element 11 and the second drain D2 of the second switching element 21 are electrically connected to each other. As such, at the point where the first switching element 11 and the second switching element 21 are connected to each other (ie, the AC output terminal P), AC power of a specific phase is output.

That is, the first source S1 of the first switching element 11 is connected to the lower surface of the metal substrate 30 through the first spacer 13, and the second drain D2 of the second switching element 21 is connected. ) is directly connected to the upper surface of the metal substrate 30. Accordingly, the first source S1 of the first switching element 11 and the second drain D2 of the second switching element 21 output AC power of a specific phase through the metal substrate 30 connected to each other. do.

In addition, the first gate G1 of the first switching device 11 and the second gate G2 of the second switching device 21 are formed with terminals outside the module through gate pads.

Next, the first spacer 13 and the second spacer 23 are connected to the first gate G1 of the first switching device 11 to implement a double-sided module, and the first wire 15 and the second A minimum height space for the second wire 25 to be connected to the second gate G2 of the switching element 21 can be secured.

In addition, the first spacer 13 is electrically connected to the first source S1 of the first switching element 11 and the lower surface of the metal substrate 30, and the second spacer 23 is the second switching element ( 21) is electrically connected to the second source S2 and the second insulating circuit board 27. The first spacer 13 and the second spacer 23 are high heat dissipation/high conductivity conductors, for example, copper (Cu), copper molybdenum (CuMo), aluminum silicon carbide (AlSiC), aluminum carbide ( AlC) and copper tungsten (CuW).

Next, the first wire 15 electrically connects the first gate G1 of the first switching device 11 and the gate pad of the first insulating circuit board 17, and the second wire 25 2 Electrically connect the second gate G2 of the switching element 21 and the gate pad of the second insulating circuit board 27. The first wire 15 and the second wire 25 may be made of, for example, any one of aluminum (Al), copper (Cu), gold (Au), and copper-plated aluminum (Al coated Cu). have.

Next, the first insulating circuit board 17 is electrically connected to the first drain D1 of the first switching element 11 by forming a metal pattern on the ceramic substrate, and the second insulating circuit board 27 is also ceramic. A metal pattern is formed on the substrate and electrically connected to the second source S2 of the second switching element 21 through the second spacer 23 . Here, the copper (Cu) pattern is mainly used as the metal pattern, but in order to improve bonding with the lower metal pad of the switching element, any one of nickel (Ni), gold (Au), and silver (Ag) is applied to the copper pattern. Can be further plated.

Each of the first insulating circuit board 17 and the second insulating circuit board 27 is connected to the first drain D1 of the first switching element 11 and the second source S2 of the second switching element 21. It not only serves to flow current, but also serves to electrically insulate the power module 100 from the outside.

Here, the first insulating circuit board 17 and the second insulating circuit board 27 are, for example, aluminum oxide (Al2O3), aluminum nitride (AlN), silicon nitride (Si3N4), zirconia toughened alumina (Zirconia Toughened Alumina, ZTA) may be any one material.

Next, the metal substrate 30 connects the first source S1 of the first switching element 11 included in the high side circuit 10 and the second switching element 21 included in the low side circuit 20. It is located between the 2 drains (D2) and is responsible for conducting current going out to a specific phase.

The metal substrate 30 is an intermediate substrate between the high side circuit 10 and the low side circuit 20 and has excellent electrical and thermal conductivity. The metal substrate 30 is, for example, silver (Ag), copper (Cu), gold (Au), aluminum (Al), magnesium (Mg), molybdenum (Mo), tungsten (W), nickel (Ni) It can be any one material or an alloy of two or more.

In addition, the amount of heat flow can be adjusted by changing the thickness of the metal substrate 30 . This makes it possible to flexibly cope with the rated output design of the power module 100 .

4 is a diagram showing a result of comparing parasitic inductance according to terminal arrangement structures.

As shown in FIG. 4, the power module 100 has a parasitic inductance component depending on the terminal arrangement structure, such as when the power module 100 has a horizontal arrangement structure (see busbar1) and a vertical arrangement arrangement structure (see busbar2). It can vary.

Since the power module 100 has a stacked structure, this corresponds to the case where the arrangement structure of the module PN terminals is a vertical arrangement arrangement structure. The power module 100 can minimize the parasitic inductance component in the case of the longitudinal arrangement structure rather than the case of the horizontal arrangement arrangement structure.

Therefore, compared to conventional power modules, the power module 100 can reduce the parasitic inductance component by vertically arranging electrode terminals in a stacked structure, which was structurally only arranged horizontally.

Referring to FIG. 4 , the power module 100 can reduce a parasitic inductance component by about 80% compared to a conventional power module having a horizontal arrangement structure. In this way, the power module 100 can improve switching loss and durability of the module.

FIG. 5 is a diagram illustrating a case where the power module of FIG. 1 is implemented as a three-phase driving power module, and FIG. 6 is a diagram showing a circuit in which the three-phase driving power module of FIG. 5 is connected to a motor.

The power module 100 can be expanded in the horizontal direction to expand the application range. Specifically, the power module 100 corresponds to a half bridge circuit (2in1) first, and corresponds to a full bridge circuit (4in1) when two are arranged in the transverse direction, and when three are arranged in the transverse direction, a three-phase drive circuit ( 6in1).

FIG. 5 shows a three-phase drive module in which three power modules 100 are arranged in a lateral direction, and FIG. 6 shows a case where the three-phase drive module is applied to motor control.

The three-phase driving module corresponds to a three-phase driving module for an electric vehicle that can be implemented by extending the power module 100 .

That is, the first power module 110a, the second power module 110b, and the third power module 110c are arranged in parallel in the lateral direction so that DC power (battery power) from the outside is common through the DC connector 40. supplied with Here, the DC connector 40 is connected to the battery 60.

Here, the first power module 110a outputs U-phase AC power and inputs the U-phase of the motor 50, and the second power module 110b outputs W-phase AC power and supplies the W-phase of the motor 50. , and the AC power of the V phase is output from the third power module 110c and is input to the V phase of the motor 50.

Although the foregoing description has been focused on the novel features of the present invention as applied to various embodiments, one skilled in the art will be able to understand the above-described apparatus and method without departing from the scope of the present invention. It will be appreciated that various deletions, substitutions, and changes in the form and detail of are possible. Accordingly, the scope of the present invention is defined by the appended claims rather than by the foregoing description. All modifications that come within the scope of equivalence of the claims are embraced by the scope of the present invention.

1: high heat dissipation molding member 10: high side circuit
11: first switching element 13: first spacer
15: first wire 17: first insulating circuit board
20: low side circuit 21: second switching element
23: second spacer 25: second wire
27: second insulating circuit board 30: metal substrate
40: DC connector 50: motor

Claims (15)

As an intermediate substrate of a laminated structure, a metal substrate to which AC power of a specific phase is output;
a high-side circuit disposed below the metal substrate, electrically connected to the metal substrate, and connected to a (+) terminal of an external DC power supply; and
A low-side circuit disposed on the upper side of the metal substrate, electrically connected to the metal substrate, and connected to the (-) terminal of the DC power supply;
The high side circuit,
Forming an internal stacked structure in the order of a first insulating circuit board, a first switching element, a first spacer, and the metal substrate;
The low side circuit,
An internal stacked structure is formed in the order of the metal substrate, the second switching element, the second spacer, and the second insulating circuit board,
The first gate of the first switching element is connected to the gate pad of the first insulating circuit board through a first wire to form a terminal outside;
The second gate of the second switching element is connected to the gate pad of the second insulating circuit board through a second wire to form a terminal outside;
A power module using a laminated structure in which the thickness of the metal substrate is adjusted to control heat flow.
delete According to claim 1,
The first switching element and the second switching element,
A power module using a laminated structure that is connected by a cascode to form a half bridge circuit and converts the DC power to the AC power through a switching operation.
According to claim 1,
The first switching element and the second switching element,
A power module using a laminated structure that is one of MOSFET (Metal Oxide Semiconductor Field Effect transistor), Superjunction MOSFET, IGBT (Insulated Gate Bipolar Transistor), JFET (Junction Field Effect Transistor), and HEMT (High Electron Mobility Transistor).
According to claim 1,
The first switching element and the second switching element,
A first drain of the first switching element is directly connected to the first insulating circuit board and connected to a (+) terminal of the DC power supply, and a second source of the second switching element is connected to the second spacer through the second spacer. 2 connected to the insulation circuit board and connected to the (-) terminal of the DC power supply,
A first source of the first switching element is connected to the lower surface of the metal substrate through the first spacer, and a second drain of the second switching element is directly connected to the upper surface of the metal substrate. Power module using .
delete According to claim 1,
The first spacer and the second spacer,
A power module using a laminated structure that is a high heat dissipation/high conductivity conductor.
According to claim 1,
The first insulating circuit board and the second insulating circuit board,
A power module using a laminated structure in which a metal pattern is formed on a ceramic substrate.
According to claim 8,
The metal pattern,
A power module using a laminated structure in which one of nickel, gold, and silver is plated on a copper pattern.
According to claim 1,
The metal substrate,
A power module using a laminated structure made of one of silver, copper, gold, aluminum, magnesium, molybdenum, tungsten, and nickel or an alloy of two or more.
According to claim 1,
a molding member for molding the stacked structure of the high-side circuit, the metal substrate, and the low-side circuit;
A power module using a laminated structure further comprising a.
According to claim 11,
The molding member,
A power module using a laminated structure in which silicon oxide or aluminum oxide particles are added to an epoxy molding compound (EMC).
first to third power modules arranged in parallel in the transverse direction; a motor to which each of the three-phase AC power output from the first to third power modules is input; a DC connector supplying common DC power to the first to third power modules; And a battery connected to the DC connector; including,
Each of the first to third power modules,
As an intermediate substrate of a laminated structure, a metal substrate to which AC power of a specific phase is output;
a high side circuit disposed below the metal substrate, electrically connected to the metal substrate, and connected to the (+) terminal of the DC power supply; and
A low-side circuit disposed on the upper side of the metal substrate, electrically connected to the metal substrate, and connected to the (-) terminal of the DC power supply;
The high side circuit,
Forming an internal stacked structure in the order of a first insulating circuit board, a first switching element, a first spacer, and the metal substrate;
The low side circuit,
An internal stacked structure is formed in the order of the metal substrate, the second switching element, the second spacer, and the second insulating circuit board,
The first gate of the first switching element is connected to the gate pad of the first insulating circuit board through a first wire to form a terminal outside;
The second gate of the second switching element is connected to the gate pad of the second insulating circuit board through a second wire to form a terminal outside;
The three-phase drive module for an electric vehicle in which the thickness of the metal substrate is adjusted to control the heat flow.
delete According to claim 13,
The first switching element and the second switching element,
A first drain of the first switching element is directly connected to the first insulating circuit board and connected to a (+) terminal of the DC power supply, and a second source of the second switching element is connected to the second spacer through the second spacer. 2 connected to the insulation circuit board and connected to the (-) terminal of the DC power supply,
A first source of the first switching element is connected to the lower surface of the metal substrate through the first spacer, and a second drain of the second switching element is directly connected to the upper surface of the metal substrate. 3-phase drive module for

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