JP3640204B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP3640204B2
JP3640204B2 JP2000112601A JP2000112601A JP3640204B2 JP 3640204 B2 JP3640204 B2 JP 3640204B2 JP 2000112601 A JP2000112601 A JP 2000112601A JP 2000112601 A JP2000112601 A JP 2000112601A JP 3640204 B2 JP3640204 B2 JP 3640204B2
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plate
plasma
electromagnetic wave
substrate
plasma processing
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Expired - Fee Related
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JP2000112601A
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Japanese (ja)
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JP2000357683A (ja
JP2000357683A5 (enrdf_load_stackoverflow
Inventor
正人 池川
勉 手束
一郎 佐々木
建人 臼井
博宣 川原
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Hitachi Ltd
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Hitachi Ltd
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  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2000112601A 1999-04-14 2000-04-13 プラズマ処理装置及びプラズマ処理方法 Expired - Fee Related JP3640204B2 (ja)

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JP2000112601A JP3640204B2 (ja) 1999-04-14 2000-04-13 プラズマ処理装置及びプラズマ処理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10622699 1999-04-14
JP11-106226 1999-04-14
JP2000112601A JP3640204B2 (ja) 1999-04-14 2000-04-13 プラズマ処理装置及びプラズマ処理方法

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JP2000357683A JP2000357683A (ja) 2000-12-26
JP2000357683A5 JP2000357683A5 (enrdf_load_stackoverflow) 2005-03-17
JP3640204B2 true JP3640204B2 (ja) 2005-04-20

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1293789C (zh) * 2001-01-18 2007-01-03 东京毅力科创株式会社 等离子体装置及等离子体生成方法
JP3625197B2 (ja) * 2001-01-18 2005-03-02 東京エレクトロン株式会社 プラズマ装置およびプラズマ生成方法
JP3893888B2 (ja) 2001-03-19 2007-03-14 株式会社日立製作所 プラズマ処理装置
KR20020080014A (ko) * 2001-04-10 2002-10-23 주식회사 에이티씨 플라즈마 처리 장치
JP3757159B2 (ja) * 2001-11-28 2006-03-22 株式会社日立製作所 プラズマ処理装置
JP4308018B2 (ja) * 2002-02-01 2009-08-05 東京エレクトロン株式会社 エッチング方法
JP4847009B2 (ja) * 2002-05-23 2011-12-28 ラム リサーチ コーポレーション 半導体処理プラズマ反応器用の多部品電極および多部品電極の一部を取り換える方法
JP3723783B2 (ja) * 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
JP2012114156A (ja) * 2010-11-22 2012-06-14 Ulvac Japan Ltd 圧電素子の製造方法
GB201021860D0 (en) * 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
JP5728565B2 (ja) * 2013-12-24 2015-06-03 東京エレクトロン株式会社 プラズマ処理装置及びこれに用いる遅波板
WO2018101065A1 (ja) * 2016-11-30 2018-06-07 東京エレクトロン株式会社 プラズマ処理装置
JP7374006B2 (ja) * 2020-01-30 2023-11-06 株式会社日立ハイテク プラズマ処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3355926B2 (ja) * 1995-05-19 2002-12-09 株式会社日立製作所 プラズマ処理装置
JPH1145876A (ja) * 1997-07-28 1999-02-16 Hitachi Ltd プラズマ処理装置

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