JP3631364B2 - Liquid crystal display - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an active matrix liquid crystal display device having an auxiliary capacity.
[0002]
[Prior art]
FIG. 9 is an explanatory plan view showing the configuration of one pixel on the TFT array substrate used in the active matrix liquid crystal display device. 9, 1 is a gate line, 2 is a source line, 3 is a drain electrode, 4 is a pixel electrode (hereinafter simply referred to as pixel ITO) made of ITO (indium tin oxide), and 5 is an auxiliary. It is a capacitive electrode (hereinafter referred to as Cs electrode). Reference numeral 26 denotes an overlapping portion (shaded portion) between the pixel ITO 4 and the Cs electrode 5, and this overlapping portion forms an auxiliary capacitance. FIG. 10 is an explanatory cross-sectional view of the TFT array substrate taken along the line AA shown in FIG. In FIG. 10, 4 is a pixel ITO, 7 is a glass substrate, 8 is a gate insulating film, and 9 is an insulating film. A Cs electrode 5 is provided on the glass substrate 7, and a pixel ITO 4 is formed through a gate insulating film 8. An insulating film 9 is formed on the uppermost layer.
[0003]
On the TFT array substrate, a plurality of the above-described gate lines 1 are arranged in parallel with each other at a constant interval. Further, a Cs electrode 5 is disposed on the TFT array substrate in parallel with the gate line at a predetermined distance from the gate line. Next, a gate insulating film (see FIG. 10) is formed to cover the TFT array substrate other than the gate line, the Cs electrode, and the portion covered with these. In addition, a plurality of source lines are arranged in parallel to each other at a constant interval so as to intersect the gate lines via a gate insulating film. A region defined by the gate line and the source line is called a pixel. A pixel ITO is disposed on the pixel so as to cover the Cs electrode via the gate insulating film. A switching element (not shown) is disposed at the intersection of the gate line and the source line, and the switching element is connected to the source line and connected to the pixel ITO via the drain electrode. One pixel ITO and one switching element are arranged in an array for each pixel. Further, an insulating film 9 is formed on the uppermost layer to constitute a TFT array substrate.
[0004]
A counter electrode, a color filter, a black matrix, and the like are disposed on a counter substrate (not shown) disposed to face the TFT array substrate.
[0005]
Further, an alignment film is formed on each of the TFT array substrate and the counter substrate, and both the substrates are joined at a peripheral portion of the both substrates with a gap between them, and a liquid crystal material is injected into the gap between both the substrates to display a liquid crystal display. The device is configured.
[0006]
Further, the liquid crystal display device is provided with a drive circuit for controlling the switching elements, an alignment film for screen display, a backlight, and the like.
[0007]
Next, a manufacturing method of the TFT array substrate will be described. A gate line made of Cr or the like is formed on a glass substrate by a sputtering method or the like. Thereafter, a gate insulating film made of SiN or the like is formed to a thickness of about 0.3 μm by a CVD method or the like. A source line and a drain electrode made of Al or the like are formed on the gate insulating film by a sputtering method or the like. Further, the pixel ITO is formed to a thickness of about 0.1 μm by sputtering or the like and connected to the drain electrode. After that, an insulating film made of SiN or the like is formed on the uppermost layer by a CVD method or the like with a thickness of about 0.3 μm. The TFT array substrate is completed as described above.
[0008]
A short circuit occurring in a pixel of a TFT array substrate used in such a liquid crystal display device will be described.
[0009]
9 and 10, when a film defect such as a pinhole occurs in the overlapping portion 26 of the gate insulating film 8, the Cs electrode 5 and the pixel ITO4 cause an electrical short circuit, and the pixel becomes a point defect. FIG. 11 is an explanatory plan view showing that a pinhole is generated in the gate insulating film between the Cs electrode 5 and the pixel ITO 4 in the pixel configuration of the conventional active matrix substrate, and FIG. 12 is shown in FIG. It is a cross-sectional explanatory view showing a pixel configuration including a pinhole. 11 and 12, 11 is a pinhole, 21 is a recess of the pixel ITO, and the other reference numerals are the same as those in FIGS. 9 and 10.
[0010]
As shown in FIG. 12, since the pixel ITO 4 is formed where the pinhole 11 is generated so as to divide the gate insulating film 8, the pixel ITO 4 also corresponds to the shape of the pinhole 11 in the pixel ITO4. The form in which the recess 21 is formed is shown. Since the pixel ITO 4 has entered the pinhole 11, the pixel ITO 4 is short-circuited with the Cs electrode 5.
[0011]
In a liquid crystal display device, the presence of a point defect is not immediately connected with a defect, but it is desirable that the defect does not exist in terms of display quality. Depending on the number of point defects, the liquid crystal display device becomes a defective product. Sometimes. Therefore, it is desirable to repair such a point defect if it can be repaired. At this time, since the point defect due to the abnormality of the gate insulating film 8 in the overlapping portion 26 is due to a short circuit between the Cs electrode 5 and the pixel ITO 4, in order to repair this point defect, the Cs electrode 5 and the The pixel ITO4 must be electrically separated.
[0012]
A conventional example showing a method for this is proposed in Japanese Patent Laid-Open No. 2-108028. FIG. 13 is an explanatory plan view showing a pixel configuration of a conventional active matrix substrate. In FIG. 13, the same elements as those shown in FIGS. 9 to 12 are denoted by the same reference numerals, 10 is a clearance, 25 is a Cs electrode, 27 is a pixel ITO 4 and a Cs electrode 25. A indicates a pinhole, which is an example of a film defect. The Cs electrode 25 shown in FIG. 13 is designed at the design stage in advance when a large number of convex portions are attached to the Cs electrode so that the convex portions become overlapping portions, and a pinhole occurs in any overlapping portion. It is configured such that it is easily separated electrically by cutting at the base of the convex portion. That is, when a pinhole is generated in the gate insulating film at the point A, the base portion indicated by B in FIG. 13 is irradiated with a laser to cut it by cutting (hereinafter referred to as laser cut), and the Cs electrode 25 In addition, the overlapping portion 27 of the pixel ITO4 and the Cs electrode 25 are separated.
[0013]
[Problems to be solved by the invention]
One parameter that determines the size of the auxiliary capacitor in the liquid crystal display device having the auxiliary capacitor is the area of the overlapping portion between the Cs electrode and the pixel ITO. Here, it is necessary to reduce the space required for disposing the Cs electrode 5 on the TFT array substrate as much as possible and secure an overlapping area necessary for the operation of the liquid crystal display device to increase the aperture ratio as much as possible. It is advantageous in terms of such.
[0014]
However, if the Cs electrode has the configuration shown in FIG. 13, there are the following disadvantages.
[0015]
(1) In order to enable partial separation of the Cs electrode, it is necessary to divide the overlapping portion of the Cs electrode and the pixel ITO into a plurality of sections (convex portions) in advance. For this purpose, it is necessary to provide a gap 10 between one section and an adjacent section, but this gap 10 does not contribute to the size of the auxiliary capacity.
[0016]
(2) Even if the size of the short-circuited portion is very small, at least one section area is sacrificed for the repair.
[0017]
(3) A space for laser cutting must be provided. This space does not contribute to the size of the auxiliary capacity.
[0018]
The present invention has been made to solve the problems (1) to (3) described above, and the layout of the Cs electrode remains the same as in the previous (1) to (3). An object of the present invention is to provide a TFT array substrate capable of repairing a defective portion between the Cs electrode 5 and the pixel ITO 4 without causing a serious design disadvantage, a manufacturing method thereof, and a liquid crystal display device using the TFT array substrate. .
[0019]
[Means for Solving the Problems]
The pixel ITO 4 is selectively removed by selectively irradiating the portion of the gate insulating film 8 where the short-circuit occurs or its vicinity with the laser, thereby selectively eliminating the short-circuit. As a cause of causing a short circuit, the case of a pinhole has been described. However, in addition to a pinhole, it is assumed that a short circuit due to a minute foreign substance remains.
[0020]
The liquid crystal display device of the present invention comprises a TFT array substrate, a counter substrate disposed to face the TFT array substrate, and a liquid crystal material interposed between the TFT array substrate and the counter substrate.
A gate line and an auxiliary capacitance electrode parallel to the gate line are provided on the TFT array substrate,
A gate insulating film is provided to cover the gate line, the auxiliary capacitance electrode, and the TFT array substrate;
A source line intersecting the gate line through the gate insulating film is provided;
A switching element is provided at an intersection between the gate line and the source line,
A pixel electrode is provided to cover at least the auxiliary capacitance electrode through the gate insulating film,
A drain electrode connecting the pixel electrode and the switching element is provided;
A liquid crystal display device comprising an insulating film covering the pixel electrode, the drain electrode, the switching element and the source line,
A short circuit generated in the gate insulating film at the overlapping portion between the pixel electrode and the auxiliary capacitance electrode is selectively eliminated.
[0021]
It is preferable that the short circuit is selectively eliminated by removing the vicinity of the pixel electrode corresponding to the short circuit part of the gate insulating film in which the short circuit has occurred and the vicinity of the insulating film corresponding to the short circuit part. .
[0022]
It is preferable that the short circuit is selectively eliminated by further removing the vicinity of the gate insulating film including the short circuit part and the vicinity of the auxiliary capacitance electrode corresponding to the short circuit part.
[0023]
Moreover, the manufacturing method of the TFT array substrate used in the liquid crystal display device of the present invention is as follows:
(A) forming the gate line and the auxiliary capacitance electrode on a glass substrate;
(B) forming the gate insulating film;
(C) forming the source line, the switching element, the pixel electrode and the drain electrode on the gate insulating film;
(D) forming the insulating film; and
(E) A manufacturing method including a step of selectively eliminating a short circuit generated in the gate insulating film.
[0024]
It is preferable that the short circuit is selectively eliminated by removing the vicinity of the pixel electrode corresponding to the short circuit part of the gate insulating film in which the short circuit has occurred and the vicinity of the insulating film corresponding to the short circuit part.
[0025]
It is preferable that the surface of the vicinity of the insulating film is irradiated with laser light to sublimate and remove the vicinity of the insulating film and the vicinity of the pixel electrode.
[0026]
The wavelength of the laser beam is preferably 0.1 μm to 1.06 μm.
[0027]
The output density of the laser beam is 1 × 10 at the surface near the insulating film. ² J / m ² ~ 1x10 ⁴ J / m ² It is preferable that
[0028]
It is preferable that the laser beam is generated by any one of a YAG laser and an excimer laser.
[0029]
It is preferable that the short circuit is selectively eliminated by further removing the vicinity of the gate insulating film and the vicinity of the auxiliary capacitance electrode.
[0030]
It is preferable that the vicinity of the gate insulating film is irradiated with laser light to sublimate and remove the vicinity of the gate insulating film and the vicinity of the auxiliary capacitance electrode.
[0031]
The wavelength of the laser beam is preferably 0.1 μm to 1.06 μm.
[0032]
The output density of the laser light is 1 × 10 on the surface of the portion near the pixel electrode. ² J / m ² ~ 1x10 ⁴ J / m ² It is preferable that
[0033]
It is preferable that the laser beam is generated by any one of a YAG laser and an excimer laser.
[0034]
Further, another liquid crystal display device of the present invention comprises a TFT array substrate, a counter substrate disposed opposite to the TFT array substrate, and a liquid crystal material interposed between the TFT array substrate and the counter substrate. ,
A gate line is provided on the TFT array substrate,
A gate insulating film is provided to cover the gate line and the TFT array substrate;
A source line intersecting the gate line through the gate insulating film is provided;
A switching element is provided at an intersection between the gate line and the source line,
A pixel electrode is provided to cover at least a part of the gate line through the gate insulating film,
A drain electrode connecting the pixel electrode and the switching element is provided;
A liquid crystal display device comprising an insulating film covering the pixel electrode, the drain electrode, the switching element and the source line,
A short circuit generated in the gate insulating film at the overlapping portion between the pixel electrode and a part of the gate line is selectively eliminated.
[0035]
It is preferable that the short circuit is selectively eliminated by removing the vicinity of the pixel electrode corresponding to the short circuit part of the gate insulating film in which the short circuit has occurred and the vicinity of the insulating film corresponding to the short circuit part. .
[0036]
It is preferable that the short circuit is selectively eliminated by further removing the vicinity of the gate insulating film including the short circuit part and the vicinity of the overlapping part corresponding to the short circuit part.
[0037]
The manufacturing method of the TFT array substrate used in the liquid crystal display device of the present invention is as follows:
(A) forming the gate line on a glass substrate;
(B) forming the gate insulating film;
(C) forming the source line, the switching element, the pixel electrode and the drain electrode on the gate insulating film;
(D) forming the insulating film; and
(E) A manufacturing method including a step of selectively eliminating a short circuit generated in the gate insulating film.
[0038]
It is preferable that the short circuit is selectively eliminated by removing the vicinity of the pixel electrode corresponding to the short circuit part of the gate insulating film in which the short circuit has occurred and the vicinity of the insulating film corresponding to the short circuit part.
[0039]
It is preferable that the surface of the vicinity of the insulating film is irradiated with laser light to sublimate and remove the vicinity of the insulating film and the vicinity of the pixel electrode.
[0040]
Further, another liquid crystal display device of the present invention includes a TFT array substrate, a counter substrate disposed to face the TFT array substrate, and a liquid crystal material interposed between the TFT array substrate and the counter substrate. Become
A gate line and an auxiliary capacitance electrode parallel to the gate line are provided on the TFT array substrate,
A gate insulating film is provided to cover the gate line, the auxiliary capacitance electrode, and the TFT array substrate;
A source line intersecting the gate line through the gate insulating film is provided;
A switching element is provided at an intersection between the gate line and the source line,
A drain electrode is provided in connection with a part of the switching element,
An insulating film is provided to cover the drain electrode and the switching element and the source line except for a part of the drain electrode,
A liquid crystal display device comprising a pixel electrode connected to a part of the drain electrode and covering the insulating film,
A short circuit generated in the gate insulating film at the overlapping portion between the pixel electrode and the auxiliary capacitance electrode is selectively eliminated.
[0041]
It is preferable that the short circuit is selectively eliminated by removing the vicinity of the pixel electrode corresponding to the short circuit part of the gate insulating film in which the short circuit has occurred and the vicinity of the insulating film corresponding to the short circuit part. .
[0042]
It is preferable that the short circuit is selectively eliminated by further removing the vicinity of the gate insulating film including the short circuit part and the vicinity of the auxiliary capacitance electrode corresponding to the short circuit part.
[0043]
The manufacturing method of the TFT array substrate used in the liquid crystal display device of the present invention is as follows:
(A) forming the gate line and the auxiliary capacitance electrode on a glass substrate;
(B) forming the gate insulating film;
(C) forming the source line, the switching element and the drain electrode on the gate insulating film;
(D) forming the insulating film;
(E) forming a pixel electrode;
(F) A manufacturing method including a step of selectively eliminating a short circuit generated in the gate insulating film.
[0044]
It is preferable that the short circuit is selectively eliminated by removing the vicinity of the pixel electrode corresponding to the short circuit part of the gate insulating film in which the short circuit has occurred and the vicinity of the insulating film corresponding to the short circuit part.
[0045]
It is preferable that the surface of the vicinity of the insulating film is irradiated with laser light to sublimate and remove the vicinity of the insulating film and the vicinity of the pixel electrode.
[0046]
According to the TFT array substrate according to the present invention, display quality by repairing a short circuit between the Cs electrode and the pixel ITO without causing a design disadvantage such as a decrease in aperture ratio in a liquid crystal display device using the TFT array substrate. Improvement and yield improvement are possible.
[0047]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
[0048]
Embodiment 1
In the present embodiment, the configuration of the TFT array substrate and the liquid crystal display device and the manufacturing method of the TFT array substrate are the same as those described in the section of the prior art.
[0049]
As a short circuit occurring in the insulating film of the TFT array substrate according to the present embodiment, for example, a method of repairing the short circuit occurring in the gate insulating film between the Cs electrode and the pixel ITO shown in FIGS. 11 and 12 will be described. To do. In FIG. 12, 11 is a pinhole, which is a defective portion of the gate insulating film. In the pinhole 11, the Cs electrode 5 and the pixel ITO 4 are in direct contact, and a short circuit defect has occurred. FIG. 1 is a cross-sectional explanatory diagram illustrating a pixel configuration of a TFT array substrate in which a short circuit is eliminated by applying the method of the present invention, and FIG. 2 is a plan explanatory diagram illustrating a pixel configuration of the TFT array substrate in which a short circuit is eliminated. . In FIGS. 1 and 2, 6 is an overlapping portion (shaded portion) of the Cs electrode and the pixel ITO, R indicates laser irradiation, and the other symbols are the same as those in FIGS. Similar to the case shown in FIG. 12, the pinhole 11 is a portion made of the same material as the pixel ITO 4. Here, when a laser is irradiated on the vicinity of the short-circuited portion of the insulating film, the pixel ITO 4 is sublimated and removed together with the upper insulating film 9 as shown in FIG. The vicinity of the pixel ITO corresponding to the short-circuit portion in which the short-circuit due to the pinhole 11 or the like generated in the gate insulating film (hereinafter simply referred to as the vicinity of the pixel ITO) refers to the short-circuit portion and the short-circuit portion in the gate insulating film. A portion of the pixel ITO corresponding to a portion of the gate insulating film including an area of about 3 μm to 5 μm square (which may be larger depending on the size of the defect). Further, the vicinity of the insulating film corresponding to the short-circuited portion in the gate insulating film (hereinafter simply referred to as the vicinity of the insulating film) is the same area as the vicinity of the pixel ITO described above and is the upper layer of the vicinity of the pixel ITO. This is the portion of the insulating film located at. The vicinity as described above is shown as a rectangular region 21 surrounding the pinhole 11 in FIG. Only the vicinity of the pixel ITO and the vicinity of the insulating film are removed, and no other processing is performed on the other part of the pixel ITO and the other part of the insulating film. The part is selectively removed. Further, eliminating the short circuit by selectively removing the vicinity of the pixel ITO and the vicinity of the insulating film is referred to as selectively eliminating the short circuit.
[0050]
As described above, the surface of the vicinity of the insulating film is irradiated with laser light in order to selectively eliminate the short circuit and restore the pixel on the TFT array substrate.
[0051]
An excimer laser or a YAG laser can be used as a laser used for repair. In particular, the YAG laser is generally used in the laser repair process of a liquid crystal display device, and the fact that this laser can be used means that it is not necessary to introduce a new device, which is significant. When using a YAG laser with a wavelength of 1.06 μm, the typical irradiation energy is 1 × 10 per shot. ⁴ J / m ² Degree. The pixel ITO4 can be removed by irradiating several shots with this energy. However, since there is some variation in the adhesion at the interface between the pixel ITO 4 and the gate insulating film 8, the optimum energy also has a certain amount of width.
[0052]
Therefore, in the present embodiment, the wavelength range of the laser light is 0.1 μm or more and 1.06 μm or less. This is because the wavelength of the laser beam that can be easily used for repairing the liquid crystal display device is in this range. More preferably, the wavelength of the laser beam is 1.06 μm. This is because ITO peels off at the interface between the gate insulating film and ITO at this wavelength. The mechanism at this time is thought to be due to a thermal process rather than a photochemical reaction when an excimer laser is used.
[0053]
The output density of the irradiation energy of laser light is 1 × 10 on the surface of the portion near the insulating film to be irradiated. ² J / m ² 1 × 10 or more ⁴ J / m ² The following. 1 × 10 ² J / m ² The reason for the above is that no processing is performed with an energy of less than this. ⁴ J / m ² The reason for the following is to remove the ITO without damaging the gate insulating film. More preferably, the output density of the irradiation energy of the laser beam is 1 × 10 on the surface of the portion near the insulating film to be irradiated. ³ J / m ² To the extent. However, the laser irradiation is performed with such an energy that the substrate is not actually processed, and if it is not processed, the energy is increased by about 10% and the irradiation is repeated. This procedure will eventually reveal the appropriate energy to remove the ITO at the interface between the gate insulating film and the ITO. Therefore, the output density of energy described above is only a guide.
[0054]
According to this repairing method, there are no restrictions on the shapes of the Cs electrode 5 and the pixel ITO 4, and the conventional shape can be applied. In addition, since partial separation of the Cs electrode is not required, the auxiliary capacity corresponding to the area of the rectangular region 21 can be reduced. Further, this decrease is a level that hardly affects the display performance of the pixel. Therefore, there is no design disadvantage.
[0055]
In the TFT array substrate formed by applying the short-circuit repairing method described in the present embodiment, it is not necessary to partially separate the Cs electrode, and there is no space for laser cutting, and therefore the opening. Since the rate is not sacrificed at all, in a liquid crystal display device using this TFT array substrate, a high performance and high quality liquid crystal display device with a high aperture ratio and a small number of point defects can be produced with a high yield.
[0056]
Embodiment 2
FIG. 3 is an explanatory plan view showing an example of the pixel configuration of the TFT array substrate when the gate insulating film defect 12 larger than the pinhole shown in FIG. 11 occurs.
[0057]
4, 5 and 6 are cross-sectional explanatory views showing an example in which a short circuit due to a defect in this case is repaired by laser irradiation. 4 to 6, reference numeral 13 denotes an edge portion of the Cs electrode, reference numeral 14 denotes an edge after removal by laser irradiation, and other reference numerals are the same as those in FIGS. In the same manner as in the first embodiment, the short circuit due to the defect and the film defect part on Cs as the peripheral part of the short circuit are surrounded, and a region larger by about 1 to 2 μm is formed in the vicinity of the gate insulating film (hereinafter, Simply called the vicinity of the gate insulating film). Further, the vicinity of the Cs electrode corresponding to the short circuit due to the defect (hereinafter simply referred to as the corresponding part of the Cs electrode) is located in the lower layer of the vicinity of the gate insulating film with the same area as the vicinity of the gate insulating film. This refers to the part of the Cs electrode. In this embodiment, the defect is repaired by removing the vicinity of the pixel ITO corresponding to the defective portion, but it is difficult to completely remove the pixel ITO at the edge portion 13 of the Cs electrode. Therefore, in this case, the entire portion of the Cs electrode 5 is removed by laser irradiation as shown in FIG. However, in this case, there is a possibility that the lower Cs electrode 5 and the upper pixel ITO 4 are electrically short-circuited vertically at the edge 14 after removal by laser irradiation. Therefore, as shown in FIG. 6, the pixel ITO4 is removed even in a region (referred to as the ITO vicinity) that surrounds the removed Cs electrode as a periphery of the removed portion of the Cs electrode and is larger by about 3 to 5 μm.
[0058]
In the present embodiment, the wavelength range of the laser light is 0.1 μm or more and 1.06 μm or less. This is because the wavelength of the laser beam that can be easily used for repairing the liquid crystal display device is in this range. More preferably, the wavelength of the laser beam is 1.06 μm. This is because ITO peels off at the interface between the gate insulating film and ITO at this wavelength. The mechanism at this time is thought to be due to a thermal process rather than a photochemical reaction when an excimer laser is used.
[0059]
The output density of the irradiation energy of laser light is 1 × 10 on the surface of the portion near the insulating film to be irradiated. ² J / m ² 1 × 10 or more ⁵ J / m ² The following. 1 × 10 ² J / m ² The reason for the above is that no processing is performed with an energy of less than this. ⁵ J / m ² The reason for the following is to prevent undesirable damage to the periphery of the laser irradiation. More preferably, the output density of the irradiation energy of the laser beam is 1 × 10 on the surface of the portion near the insulating film to be irradiated. ⁴ J / m ² To the extent. This is moderate energy for cutting patterns such as Cr.
[0060]
The irradiation energy of the laser light in the vicinity of ITO is the same as the above-mentioned value (the energy when removing ITO is about 1/10 of the energy of normal pattern cut).
[0061]
Also, the TFT array substrate and the liquid crystal display device according to the present embodiment can provide the same effects as those of the first embodiment.
[0062]
Further, according to the present embodiment, there is no possibility of vertical short circuit, and repair is completed.
[0063]
Embodiment 3
The method for selectively eliminating a short circuit according to the present invention can be applied to a TFT array substrate having a structure different from that of the TFT array substrate described in the first and second embodiments.
[0064]
For example, in FIG. 7, the pixel ITO is formed so as to cover a part of the gate line without providing the auxiliary capacitor electrode, and the auxiliary capacitor is formed by the overlapping portion of the part of the pixel ITO and a part of the gate line. It is a plane explanatory view of a TFT array substrate made to do. The same as in the first or second embodiment, except that the auxiliary capacitance electrode is not provided.
[0065]
In FIG. 7, reference numeral 71 denotes an overlapping portion between a part of the pixel ITO and the gate line, and other reference numerals are the same as those in FIGS. Even in the TFT array substrate having such a structure, a film defect generated in the insulating film can be repaired in the same manner as in the first or second embodiment.
[0066]
Embodiment 4
The method for selectively eliminating a short circuit according to the present invention can be applied to a TFT array substrate having a structure different from that of the TFT array substrate described in the first, second, and third embodiments.
[0067]
For example, FIG. 8 is an explanatory view showing a comparison of cross-sectional structures of TFT array substrates. In FIG. 8, 31 is a semiconductor layer of the switching element, and other symbols are the same as those in FIGS. 8A shows the structure described in the first, second, and third embodiments, whereas FIG. 8B shows the structure in which the pixel ITO is provided above the insulating film 9. Yes. The same as in the first, second, or third embodiment except that the pixel ITO is provided above the insulating film 9.
[0068]
Even in the TFT array substrate having such a structure, a film defect generated in the insulating film can be repaired in the same manner as in the first, second, or third embodiment.
[0069]
【The invention's effect】
According to the present invention, a liquid crystal display device having a high aperture ratio and a small number of point defects can be produced with a high yield. That is, a high-performance and high-quality liquid crystal display device can be produced with a high yield.
[Brief description of the drawings]
FIG. 1 is an explanatory cross-sectional view showing a pixel configuration in which a laser is irradiated on a short-circuit portion according to an embodiment of the present invention.
FIG. 2 is an explanatory plan view showing a pixel configuration in which a laser is irradiated to a short-circuit portion according to an embodiment of the present invention.
FIG. 3 is an explanatory plan view showing a pixel configuration of a short-circuit portion according to another embodiment of the present invention.
FIG. 4 is an explanatory cross-sectional view showing a pixel configuration of a short-circuit portion according to another embodiment of the present invention.
FIG. 5 is a cross-sectional explanatory view showing a pixel configuration in which a short-circuited portion according to another embodiment of the present invention is irradiated with laser.
FIG. 6 is an explanatory cross-sectional view showing a pixel configuration in which a short-circuited portion according to another embodiment of the present invention is irradiated with laser.
FIG. 7 is an explanatory plan view showing a TFT array substrate according to another embodiment of the present invention.
FIG. 8 is an explanatory cross-sectional view showing a TFT array substrate according to another embodiment of the present invention.
FIG. 9 is an explanatory plan view showing a pixel configuration of a conventional TFT array substrate.
FIG. 10 is a cross-sectional explanatory view showing a pixel configuration of a conventional TFT array substrate.
FIG. 11 is an explanatory plan view showing a short-circuit portion of a conventional TFT array substrate.
FIG. 12 is a cross-sectional explanatory view showing a short-circuit portion of a conventional TFT array substrate.
FIG. 13 is an explanatory plan view showing a method of repairing a short-circuit portion according to the conventional technique.
[Explanation of symbols]
1 Gate line
2 Source line
3 Drain electrode
4 pixel ITO
5, 25 Cs electrode
6, 26, 27 Overlap
7 Glass substrate
8 Gate insulation film
9 Insulating film
11 Pinhole
12 deficiency

Claims (9)

A TFT array substrate, a counter substrate disposed to face the TFT array substrate, and a liquid crystal material interposed between the TFT array substrate and the counter substrate.
A gate line and an auxiliary capacitance electrode parallel to the gate line are provided on the TFT array substrate,
A gate insulating film is provided to cover the gate line, the auxiliary capacitance electrode, and the TFT array substrate;
A source line intersecting the gate line through the gate insulating film is provided;
A switching element is provided at an intersection between the gate line and the source line,
A pixel electrode is provided to cover at least the auxiliary capacitance electrode through the gate insulating film,
A drain electrode connecting the pixel electrode and the switching element is provided;
A method of manufacturing the TFT array substrate used in a liquid crystal display device in which an insulating film is provided to cover the pixel electrode, the drain electrode, the switching element, and the source line,
(A) forming the gate line and the auxiliary capacitance electrode on a glass substrate;
(B) forming the gate insulating film;
(C) forming the source line, the switching element, the pixel electrode and the drain electrode on the gate insulating film;
(D) The insulating film is formed, and (e) the output density is 1 × 10 ² J / m ² to 1 × 10 ⁴ J / m at the surface near the insulating film at the surface near the insulating film. ² is irradiated with the laser beam, and the vicinity of the pixel electrode and the insulating film corresponding to the short-circuited portion corresponding to the short-circuited portion generated in the gate insulating film at the overlapping portion of the pixel electrode and the auxiliary capacitance electrode. A method for producing the TFT array substrate used in a liquid crystal display device, comprising a step of sublimating and removing a neighboring portion. The step (e)
Irradiation with laser light, the vicinity of the gate insulating film including a short-circuit portion generated in the gate insulating film at the overlapping portion of the pixel electrode and the auxiliary capacitance electrode, and the auxiliary capacitance electrode corresponding to the short-circuit portion After removing the neighboring portion, the auxiliary capacitance removed by irradiating a laser beam whose power density is 1 × 10 ² J / m ² to 1 × 10 ⁴ J / m ² on the surface of the neighboring portion of the insulating film. 2. The method according to claim 1, which is a step of removing only the pixel electrode and the insulating film in a region that surrounds the vicinity of the electrode and is about 3 to 5 [mu] m larger than the removed portion. The gate insulating film is irradiated with a laser beam having an output density of 1 × 10 ² J / m ² to 1 × 10 ⁴ J / m ² on the surface near the pixel electrode. The manufacturing method according to claim 2, wherein the vicinity of the substrate and the vicinity of the auxiliary capacitance electrode are removed by sublimation. The process according to claim 1, 2, or 3, wherein the laser beam has a wavelength of 0.1 µm to 1.06 µm. The manufacturing method according to claim 1, wherein the laser beam is generated by any one of a YAG laser and an excimer laser. A TFT array substrate, a counter substrate disposed to face the TFT array substrate, and a liquid crystal material interposed between the TFT array substrate and the counter substrate.
A gate line is provided on the TFT array substrate,
A gate insulating film is provided to cover the gate line and the TFT array substrate;
A source line intersecting the gate line through the gate insulating film is provided;
A switching element is provided at an intersection between the gate line and the source line,
A pixel electrode is provided to cover at least a part of the gate line through the gate insulating film,
A drain electrode connecting the pixel electrode and the switching element is provided;
A method of manufacturing the TFT array substrate used in a liquid crystal display device in which an insulating film is provided to cover the pixel electrode, the drain electrode, the switching element, and the source line,
(A) forming the gate line on a glass substrate;
(B) forming the gate insulating film;
(C) forming the source line, the switching element, the pixel electrode and the drain electrode on the gate insulating film;
(D) The insulating film is formed, and (e) the output density is 1 × 10 ² J / m ² to 1 × 10 ⁴ J / m at the surface near the insulating film at the surface near the insulating film. ² corresponding to the short-circuited portion and the vicinity of the pixel electrode corresponding to the short-circuited portion generated in the gate insulating film at the overlapping portion of the pixel electrode and a part of the gate line A method of manufacturing the TFT array substrate used in a liquid crystal display device including a step of sublimating and removing a portion in the vicinity of an insulating film. The step (e)
The surface of the vicinity of the insulating film is irradiated with laser light, and the shorted portion and the shorted portion of the gate insulating film including the shorted portion generated in the gate insulating film at the overlapping portion of the pixel electrode and the auxiliary capacitance electrode are applied. After removing the vicinity of the corresponding overlapping portion, the laser is irradiated with laser light whose power density is 1 × 10 ² J / m ² to 1 × 10 ⁴ J / m ² on the surface of the vicinity of the insulating film. 7. The method according to claim 6, which is a step of surrounding only the removed overlapping portion and removing only the pixel electrode and the insulating film in a region larger by about 3 to 5 [mu] m than the removed portion. A TFT array substrate, a counter substrate disposed to face the TFT array substrate, and a liquid crystal material interposed between the TFT array substrate and the counter substrate.
A gate line and an auxiliary capacitance electrode parallel to the gate line are provided on the TFT array substrate,
A gate insulating film is provided to cover the gate line, the auxiliary capacitance electrode, and the TFT array substrate;
A source line intersecting the gate line through the gate insulating film is provided;
A switching element is provided at an intersection between the gate line and the source line,
A drain electrode is provided in connection with a part of the switching element,
An insulating film is provided to cover the drain electrode and the switching element and the source line except for a part of the drain electrode,
A method of manufacturing the TFT substrate used in a liquid crystal display device connected to a part of the drain electrode and covering the insulating film and provided with a pixel electrode,
(A) forming the gate line and the auxiliary capacitance electrode on a glass substrate;
(B) forming the gate insulating film;
(C) forming the source line, the switching element and the drain electrode on the gate insulating film;
(D) forming the insulating film;
(E) a pixel electrode is formed, and (f) the output density is 1 × 10 ² J / m ² to 1 × 10 ⁴ J / m ^{2 on the} surface of the insulating film in the vicinity of the insulating film. The portion of the insulating film corresponding to the short-circuit portion and the vicinity of the pixel electrode corresponding to the short-circuit portion generated in the gate insulating film in the overlapping portion of the pixel electrode and the auxiliary capacitance electrode A method for producing the TFT substrate used in a liquid crystal display device including a step of removing a neighboring portion. The step (f)
The surface of the vicinity of the insulating film is irradiated with laser light, and the shorted portion and the shorted portion of the gate insulating film including the shorted portion generated in the gate insulating film at the overlapping portion of the pixel electrode and the auxiliary capacitance electrode are applied. After removing the vicinity of the corresponding auxiliary capacitance electrode, a laser beam having an output density of 1 × 10 ² J / m ² to 1 × 10 ⁴ J / m ² is irradiated on the surface of the vicinity of the insulating film. 9. The manufacturing method according to claim 8, which is a step of surrounding only the removed overlapping portion and removing only the pixel electrode and the insulating film in a region larger by about 3 to 5 [mu] m than the removed portion.

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