KR100929327B1 - Cancellation method of liquid crystal display device - Google Patents

Abstract

The present invention is directed to a method for igniting a cylinder of a liquid crystal display device. According to another aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device, including: forming a gate electrode and a gate line by depositing a metal film on a substrate; Forming a gate insulating film on the substrate on which the gate electrode and the gate line are formed; Sequentially forming an active layer, an ohmic contact layer, and a metal film on the gate insulating film, and forming source and drain electrodes using a mask; Sequentially forming a passivation layer and a photoreactive organic insulating layer on the source-drain layer; Etching the photoreactive organic insulating film corresponding to the overlapping portion of the gate line and the pixel electrode to be formed with a predetermined pattern; And forming a pixel electrode on the resultant structure.

The method for igniting a cylinder of a liquid crystal display device according to the present invention can perform laser welding for arm ignition on an overlapping region between a gate line and a pixel electrode, thereby making it possible to remove the organic insulating film and make it dark.

Arm ignition, overlap, gate line, pixel electrode

Description

TECHNICAL FIELD [0001] The present invention relates to a method of igniting a liquid crystal display device,

1 is a plan view of a conventional array substrate for a liquid crystal display;

Fig. 2 is a view showing a portion of the conventional liquid crystal display device which is ignited by the arm. Fig.

FIG. 3 is a cross-sectional view of a conventional I-I 'that has been repaired by an ignition on an overlapped portion of a gate line and a pixel electrode. FIG.

4 is a view showing the ignition of the overlapping portion of the gate line and the pixel electrode according to the present invention.

5A to 5D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention.

FIG. 6 is a cross-sectional view of a portion where an overlapping portion of a gate line and a pixel electrode according to the present invention is patterned. FIG.

Description of the Related Art

51 --- substrate 52 --- gate line

53 --- Gate insulating film 54 --- Passivation

55 --- photoreactive organic insulating film 56 --- pixel electrode

The present invention relates to a method of igniting an arm of a liquid crystal display device, and more particularly, to a method of igniting an arm overlapping region between a gate line and a pixel electrode, And to a method for igniting a cancer.

Recently, as the information society has developed rapidly, there has been a need for a flat panel display having excellent characteristics such as thinness, light weight, and low power consumption. Among them, a liquid crystal display Color display, and picture quality, and is actively applied to a notebook or desktop monitor.

In general, in a liquid crystal display device, two substrates on which electrodes are formed are arranged so that the surfaces on which the two electrodes are formed face each other, a liquid crystal material is injected between the two substrates, and then an electric field And moving the liquid crystal molecules, thereby expressing the image by the transmittance of light depending on the liquid crystal molecules.

The liquid crystal display device (LCD) is manufactured by a process of manufacturing a panel upper plate and a lower plate with a process of forming a liquid crystal cell constituting a pixel unit, a forming process of an alignment film for liquid crystal alignment, a rubbing process, A process of laminating a top plate and a bottom plate, and a process of injecting and sealing the liquid crystal between the top plate and the bottom plate, and the like.

Here, the manufacturing process of the lower plate is a process of forming a thin film transistor (hereinafter, referred to as 'TFT') portion and a forming process of the storage capacitor and the other electrode portion through the etching of the electrode material, the semiconductor layer, .

The pixel electrode of the lower panel forms a liquid crystal capacitor together with the common electrode of the upper plate. The voltage applied to the liquid crystal capacitor is not retained until the next signal is received, and is leaked and disappeared. Therefore, a storage capacitor must be connected to the liquid crystal capacitor to maintain the applied voltage.

In addition to signal retention, these storage capacitors have advantages such as stable gray scale display, reduced flicker, and reduced afterimage effect.

The storage capacitor can be formed by two methods. One is a method of forming an electrode for a storage capacitor separately and connecting it to a common electrode, and a method of using a part of the (n-1) th gate wiring as an electrode of a storage capacitor of an n- . The former is referred to as a storage on common method or the independent storage capacitor method, and the latter is referred to as a storage on gate method or a previous gate method.

An array substrate for a general liquid crystal display using a storage oncommon method will be described.

1 is a plan view of a pixel of an array substrate for a general liquid crystal display device. As shown in the drawing, a gate wiring 11 and a data wiring 12 are formed in an intersection, and a thin film transistor T including a gate electrode, a source electrode, and a drain electrode is formed at an intersection of the two wirings.                         

A pixel electrode that is in contact with the drain electrode is formed in a region where the gate line 11 and the data line 12 are defined to cross each other.

A first storage electrode 13 is formed in the center of the pixel region P in a direction parallel to the gate line 11. The first storage electrode 13, (C).

On the other hand, when the liquid crystal display device is completed, a final inspection operation is performed.

In the final inspection process, a test pattern is displayed on the screen of the completed liquid crystal panel and the presence or absence of defective pixels is detected, and a repair operation is performed when a defective pixel is found.

The defects of the liquid crystal display device include a defective point defect such as a color defect of each pixel cell, a bright spot (always on cell), a dark spot (always off cell), and a line defect caused by a short between adjacent data lines ).

When a liquid crystal of a normally white TN mode is used for the liquid crystal display as described above, when a channel between the source electrode and the drain electrode is defective, no voltage is applied to the pixel electrode, Is displayed as a bright spot.

In the case of such defective pixel units, the point is not noticeable when the pixel is a dark point (black). However, when the pixel is a bright point (white), there is a problem that the surrounding pixels are conspicuous in the case of black display. For this reason, it is necessary to ignite the defective pixel.

In a normally-white mode LCD, which is a mainstream in a TN (Twisted Nematic) LCD, it is necessary to apply a normally-on voltage to a liquid crystal with respect to a defective pixel to make the display black.

That is, since the defective pixel cell in which the drain electrode and the source electrode are opened is brightly displayed to the observer, the defective pixel cell should be ignited so that the observer can not recognize the defective pixel cell.

FIG. 2 is a view showing a portion of the conventional liquid crystal display device which is ignited. As shown in the figure, the method of igniting the point A causes the gate signal supplied to the pixel electrode from the drain to always be applied.

When the voltage applied to the storage electrode is changed from Vcom to Vgl, the voltage of Vcom (3.3V) applied to the storage electrode can be changed to Vgl (-5V). However, The injection port is unevenly formed, which causes a problem that the signal can not be changed.

FIG. 3 is a cross-sectional view of a conventional I-I 'that has been repaired by an ignition on an overlapped portion of a gate line and a pixel electrode. As shown in the figure, the gate signal is applied to the pixel electrode by the dark ignition method at the point C, and the success rate (10 to 20%) is low due to the thickness of the organic insulating film (2.6 탆) Lt; / RTI >

The present invention relates to a method for igniting a gate line and a pixel electrode by performing laser welding for arm ignition on an overlapping region between a gate line and a pixel electrode, And a method of igniting the display device.

According to an aspect of the present invention, there is provided a liquid crystal display device comprising:

A gate electrode and a gate line formed by depositing a metal film on a substrate and patterning the metal film;

An active layer, an ohmic contact layer and a metal film are sequentially formed on the substrate on which the gate electrode and the gate line are formed, and the metal film, the ohmic contact layer, and the active layer are etched except for a portion corresponding to the gate electrode, Source and drain electrodes formed by patterning a metal film and an ohmic contact layer in a portion corresponding to the gate electrode;

A passivation formed on the substrate on which the source-drain electrode is formed;

A photoreactive organic insulating layer provided on the passivation and having a portion corresponding to an overlapping portion of the gate line and the pixel electrode to be formed in a predetermined pattern;

And a pixel electrode formed on the resultant structure.

According to another aspect of the present invention, there is provided a method of manufacturing a liquid crystal display device,

Depositing a metal film on the substrate to form a gate electrode and a gate line;

Forming a gate insulating film on the substrate on which the gate electrode and the gate line are formed;

Sequentially forming an active layer, an ohmic contact layer, and a metal film on the gate insulating film, and forming source and drain electrodes using a mask;

Sequentially forming a passivation layer and a photoreactive organic insulating layer on the source-drain layer;

Etching the photoreactive organic insulating film corresponding to the overlapping portion of the gate line and the pixel electrode to be formed with a predetermined pattern;

And forming a pixel electrode on the resultant structure.

In particular, in the step of etching the photoreactive organic insulating film corresponding to the overlapping portion of the gate line with the pixel electrode to be formed in a predetermined pattern, the photoreactive organic insulating film is etched in a pattern of at least 6 × 8 μm There are features.

According to another aspect of the present invention, there is provided a method for igniting a cylinder of a liquid crystal display device,

In the liquid crystal display device including the liquid crystal display device according to the present invention, the laser welding is performed on the overlapped portion of the gate electrode and the pixel electrode where the photoreactive organic insulating film is etched in a predetermined pattern. have.

According to the present invention, in performing laser welding for arm ignition on an overlapping region between a gate line and a pixel electrode, it is possible to remove the organic insulating film and make it possible to obtain a dark spot.                     

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 4 is a view showing the ignition of the overlapping portion of the gate line and the pixel electrode according to the present invention. As shown in the figure, a dark region of the portion where the gate line and the pixel electrode overlap is shown.

5A to 5D are cross-sectional views illustrating a method of manufacturing a liquid crystal display device according to the present invention. Aluminum (Al), copper (Cu), or the like is deposited on the transparent substrate 51 by a method such as sputtering to form a metal thin film. Then, the metal thin film is patterned by a photolithography method to form a gate electrode (not shown) and a gate line 52 on the transparent substrate 51.

A gate insulating film 53, an active layer (not shown) and an ohmic contact layer (not shown) are formed on the transparent substrate 51 so as to cover the gate electrode (not shown) and the gate line 52 Are sequentially formed by chemical vapor deposition (hereinafter referred to as " CVD ").

The gate insulating film 53 is formed by depositing an insulating material with silicon nitride or silicon oxide.

The active layer (not shown) is formed of amorphous silicon or polycrystalline silicon that is not doped with an impurity. Further, the ohmic contact layer is formed of amorphous silicon or polycrystalline silicon doped with an N-type or P-type impurity at a high concentration.

The gate insulating film 53 is patterned so as to be exposed by a photolithography method including an anisotropic etching so that the ohmic contact layer (not shown) and the active layer (not shown) are left only in a portion corresponding to the gate electrode (not shown). At this time, the active layer (not shown) and the ohmic contact layer (not shown) are caused to remain only in a portion corresponding to the gate electrode (not shown).

As shown in FIG. 5C, a material to be a source-drain (not shown) is deposited on the active layer (not shown) and an ohmic contact layer (not shown), and patterning is performed by a photolithography method do.

Then, a passivation 54 is formed on the resultant formed with the source and drain electrodes (not shown).

The passivation layer 54 may be formed of an acryl organic compound, Teflon, benzocyclobutene (BCB), fluoropolyarylether (FPAE), cytoplast or perfluorocycloolefin An organic insulating material or an inorganic insulating material having a small dielectric constant such as perfluorocyclobutane (PFCB) is formed by chemical vapor deposition (CVD).

Then, a photoreactive organic insulating film 55 is formed on the passivation layer 54.

The photoreactive organic insulating layer 55 is formed in place of the photoresist layer. The photoreactive organic insulating layer 55 is directly patterned using the mask.

Then, as shown in FIG. 5D, the photoreactive organic insulating layer 55 patterns a contact hole (not shown) of the drain electrode and a portion where the gate line and the pixel electrode overlap with each other using a mask.

More specifically, when the pixel defect occurs due to the inspection of the liquid crystal display device by removing the photoreactive organic insulating film 55 in a portion where the gate line and the pixel electrode overlap, And the electrode of the corresponding pixel is opened to ignite the corresponding cell.

6 is a cross-sectional view of a patterned portion of an overlapping portion of a gate line and a pixel electrode according to the present invention. As shown in the figure, a hole design of at least 6 × 8 μm is required for patterning the photoreactive organic insulating film 55. This is because when the hole size of the photoreactive organic insulating layer 55 is 6 x 8 탆 or less, the photoreactive organic insulating layer 55 is formed due to the thermal flow in the course of curing the photoreactive organic insulating layer 55 This is because the holes will be clogged.

Indium-Tin-Oxide (ITO), Indium-Zinc-Oxide (ITO), etc., which are transparent conductive materials, are formed on the photoreactive organic insulating layer 55, Or indium-tin-zinc-oxide is deposited to form a pixel electrode 56 in a portion of the photoreactive organic insulating film 55 except a portion corresponding to the TFT.

The pixel electrode 56 is in electrical contact with the drain electrode through a contact hole. The pixel electrode 56 is formed so that a predetermined portion of the data line overlaps with the gate line.

When a pixel defect occurs in the liquid crystal display device formed as described above, laser welding is performed at a portion where the gate line and the pixel electrode overlap with each other, thereby making it possible to obtain a dark spot.

Therefore, the gate signal is always applied to the pixel electrode, and the display of the pixel becomes black, which appears to be not defective.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

As described above, in the method of igniting a cylinder of a liquid crystal display according to the present invention, in performing laser welding for arm ignition on an overlapping region between a gate line and a pixel electrode, laser welding is performed after removing the organic insulating film So that it becomes possible to make the block.

Claims (4)

Claims [1] A gate electrode and a gate line formed on the substrate; A gate insulating film formed on the substrate on which the gate electrode and the gate line are formed; A source-drain electrode formed on the gate insulating film; A passivation formed on the substrate on which the source-drain electrode is formed; A photoreactive organic insulating film formed on the passivation; And a pixel electrode formed on the substrate on which the photoreactive organic insulating film is formed, A photoreactive organic insulating layer corresponding to a region where the gate line and the pixel electrode overlap with each other is removed using a mask, And the gate line and the pixel electrode overlap with each other with the gate insulating film and the passivation interposed therebetween in a region where the photoreactive organic insulating film is removed. Depositing a metal film on the substrate to form a gate electrode and a gate line; Forming a gate insulating film on the substrate on which the gate electrode and the gate line are formed; Sequentially forming an active layer, an ohmic contact layer, and a metal film on the gate insulating film, and forming source and drain electrodes using a mask; Sequentially forming a passivation layer and a photoreactive organic insulating layer on a substrate on which the source and drain electrodes are formed; Forming a pixel electrode on the substrate on which the photoreactive organic insulating film is formed, The forming of the photoreactive organic insulating film includes: Removing the photoreactive organic insulating film corresponding to a region where the gate line and the pixel electrode overlap with each other by using a mask, Wherein the pixel electrode formed in the region from which the photoreactive organic insulating film is removed overlaps the gate line with the passivation and the gate insulating film interposed therebetween. 3. The method according to claim 2, wherein the step of removing the photoreactive organic insulating film corresponding to a region where the gate line and the pixel electrode overlap includes removing the photoreactive organic insulating film in a pattern of 6 x 8 mu m A method of manufacturing a display device. The method of claim 2, further comprising performing laser welding on an overlapping region of the gate line from which the photoreactive organic insulating film is removed and the pixel electrode.

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