JP3621667B2 - 半導体装置及びその実装方法 - Google Patents

半導体装置及びその実装方法 Download PDF

Info

Publication number
JP3621667B2
JP3621667B2 JP2001283974A JP2001283974A JP3621667B2 JP 3621667 B2 JP3621667 B2 JP 3621667B2 JP 2001283974 A JP2001283974 A JP 2001283974A JP 2001283974 A JP2001283974 A JP 2001283974A JP 3621667 B2 JP3621667 B2 JP 3621667B2
Authority
JP
Japan
Prior art keywords
electrode
region
semiconductor region
insulating film
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001283974A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003092402A5 (enExample
JP2003092402A (ja
Inventor
昇太郎 小野
紀夫 安原
雄介 川口
信一 帆玉
明夫 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001283974A priority Critical patent/JP3621667B2/ja
Priority to US10/013,874 priority patent/US6552389B2/en
Priority to EP01129323A priority patent/EP1215731A3/en
Priority to US10/388,509 priority patent/US7061060B2/en
Publication of JP2003092402A publication Critical patent/JP2003092402A/ja
Priority to US10/957,692 priority patent/US7026214B2/en
Publication of JP2003092402A5 publication Critical patent/JP2003092402A5/ja
Application granted granted Critical
Publication of JP3621667B2 publication Critical patent/JP3621667B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/254—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes extend entirely through the semiconductor bodies, e.g. via-holes for back side contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/257—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/258—Source or drain electrodes for field-effect devices characterised by the relative positions of the source or drain electrodes with respect to the gate electrode

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2001283974A 2000-12-14 2001-09-18 半導体装置及びその実装方法 Expired - Fee Related JP3621667B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001283974A JP3621667B2 (ja) 2001-09-18 2001-09-18 半導体装置及びその実装方法
US10/013,874 US6552389B2 (en) 2000-12-14 2001-12-13 Offset-gate-type semiconductor device
EP01129323A EP1215731A3 (en) 2000-12-14 2001-12-14 Offset-gate-type semiconductor device
US10/388,509 US7061060B2 (en) 2000-12-14 2003-03-17 Offset-gate-type semiconductor device
US10/957,692 US7026214B2 (en) 2000-12-14 2004-10-05 Offset-gate-type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001283974A JP3621667B2 (ja) 2001-09-18 2001-09-18 半導体装置及びその実装方法

Publications (3)

Publication Number Publication Date
JP2003092402A JP2003092402A (ja) 2003-03-28
JP2003092402A5 JP2003092402A5 (enExample) 2004-11-25
JP3621667B2 true JP3621667B2 (ja) 2005-02-16

Family

ID=19107381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001283974A Expired - Fee Related JP3621667B2 (ja) 2000-12-14 2001-09-18 半導体装置及びその実装方法

Country Status (1)

Country Link
JP (1) JP3621667B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1623465A1 (en) * 2003-05-02 2006-02-08 Koninklijke Philips Electronics N.V. Electronic device comprising a field-effect transistor for high-frequency applications
JP2006245391A (ja) * 2005-03-04 2006-09-14 Toshiba Corp 半導体装置
JP5063865B2 (ja) 2005-03-30 2012-10-31 オンセミコンダクター・トレーディング・リミテッド 半導体装置

Also Published As

Publication number Publication date
JP2003092402A (ja) 2003-03-28

Similar Documents

Publication Publication Date Title
US10446687B2 (en) Integrated circuit connection arrangement for minimizing crosstalk
CN104319238B (zh) 形成高电子迁移率半导体器件的方法及其结构
US9466536B2 (en) Semiconductor-on-insulator integrated circuit with back side gate
TWI618248B (zh) 具有薄基體之垂直半導體元件
US7355226B2 (en) Power semiconductor and method of fabrication
US7109551B2 (en) Semiconductor device
JP2003152178A (ja) 高スイッチングスピードのための横方向パワーｍｏｓｆｅｔ
US9570553B2 (en) Semiconductor chip with integrated series resistances
JP3906213B2 (ja) 半導体装置
US11335627B2 (en) Connection arrangements for integrated lateral diffusion field effect transistors having a backside contact
JP2016131183A (ja) 半導体装置およびその製造方法
US7973383B2 (en) Semiconductor integrated circuit device having a decoupling capacitor
JPH07283414A (ja) Ｍｏｓ型半導体装置
KR20140002676A (ko) 수직 dmos 전계 효과 트랜지스터 및 이의 제조방법
JP3621667B2 (ja) 半導体装置及びその実装方法
TW202429707A (zh) 半導體裝置
US11532608B2 (en) Semiconductor device and method for manufacturing same
US20210273118A1 (en) Semiconductor Device
JPH09260503A (ja) 半導体装置
US20210328006A1 (en) Semiconductor Device
JP2782758B2 (ja) 半導体集積回路
TWM576340U (zh) 功率電晶體裝置
KR19990070938A (ko) 전력 모스 트랜지스터
JPH04262577A (ja) 縦型電界効果トランジスタ
JPH0883898A (ja) 絶縁ゲート型サイリスタ

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040706

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040906

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20041116

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20041118

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071126

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081126

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081126

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091126

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101126

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101126

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111126

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121126

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131126

Year of fee payment: 9

LAPS Cancellation because of no payment of annual fees