JP3580904B2 - Manufacturing method of multilayer chip thermistor - Google Patents
Manufacturing method of multilayer chip thermistor Download PDFInfo
- Publication number
- JP3580904B2 JP3580904B2 JP16200695A JP16200695A JP3580904B2 JP 3580904 B2 JP3580904 B2 JP 3580904B2 JP 16200695 A JP16200695 A JP 16200695A JP 16200695 A JP16200695 A JP 16200695A JP 3580904 B2 JP3580904 B2 JP 3580904B2
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- raw material
- chip
- firing
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/008—Thermistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Description
【0001】
【産業上の利用分野】
本発明は、電子機器、プリント回路基板などに実装される積層型チップサーミスタの製造方法にかかり、特に素体内部に内部電極を有する積層型チップサーミスタの製造方法に関する。
【0002】
【従来の技術】
従来、サーミスタ素体内部に内部電極を有する積層型チップサーミスタは、サーミスタ素体と内部電極とを一体積層して乾燥させ、これを切断してチップを作り、これを焼成、さらに焼成物の両端面に外部電極を形成した後、再度焼成することによって製造されていた。特開平6ー53009 特開平6ー61014
【0003】
【発明が解決しようとする課題】
しかし、この製造方法によると未焼成のサーミスタ素体を切断してチップを製造するため、焼成後の製品の抵抗値の変動が大きかった。また、未焼成の段階でチップとして切断するため、素体が柔らかく切断片の大きさおよび切断精度に限度があり、1.0mm×0.5mm以下の製品への対応が困難であった。
【0004】
さらに、製品の寿命を延ばす目的で、サーミスタ素体の抗折強度を補うためにガラスなどを被覆して、サーミスタ素体を補強しようとしても、チップが細かいためスパッタ法を取らざるをえず、その場合皮膜が薄く実用には適しないものであった。
【0005】
【課題を解決するための手段】
そこで、上記製造方法の問題点を解決すべく、種々検討した結果サーミスタ素体を未焼成の段階で切断してチップとするのではなく、サーミスタ素体を焼成後に切断しチップとすることによって上記問題点を解決できることを見出した。
【0006】
【課題を解決するための手段】
すなわち本発明の要旨とするところは、複数のサーミスタ原料シートの積層により形成された原料シート層(15)と、該原料シート層の上面に一方向に延びるようにして複数配列されて形成された内部電極パターン(21)とを、1ないし10回積層し、その上面に原料シート層を積層して積層板(16)を作製する工程と、該積層板の上下両面に耐熱性絶縁皮膜原料膜(17)を塗布した後にこれを焼成する工程と、焼成物を前記内部電極パターン(21)の延びる方向と交差する方向で短冊状に切断する工程と、切断した短冊状片(18)のサーミスタ素体面の長尺方向に耐熱性絶縁皮膜原料膜を塗布した後、これを再度焼成する工程と、これを切断し、チップ(19)を作製する工程と、該チップの耐熱性絶縁皮膜が形成されていないサーミスタ素体面に外部電極を形成する工程とよりなり、焼成後にサーミスタ片の一部を採取し、その抵抗値を調べ、この抵抗値を基にサーミスタチップの切断長さを調整することを特徴とする積層型チップサーミスタの製造方法である。
【0007】
本発明において、内部電極の層を10層に限定するのは、これを超えると間に挟まれるサーミスタ素体が薄くなり、その結果製品の耐久性が低下するからである。
【0008】
尚、本発明はNTCサーミスタに適用され、サーミスタ素体はMn,Co,Cu,Feなどの酸化物を基とするものである。
【0009】
内部電極としては銀,パラジウムを基としたものが主に用いられる。
【0010】
外部電極には銀を主体としたものが用いられ、外部電極の表面には、ハンダとの付着性あるいは耐環境性の向上のために金属メッキ(20)が施される。
【0011】
また、耐熱性無機質皮膜は、積層型チップサーミスタ自体の抗折強度を強化するとともに、測定環境下における高温、腐食性ガスなどよりサーミスタ素体を保護するために施すものであり、ガラスあるいは結晶化ガラスなどが最適に用いられる。
【0012】
【作用】
本発明では、サーミスタ素体を焼成した後に切断するという製造方法のために、焼成後にサーミスタ片の一部を採取し、その抵抗値を調べることができ、この抵抗値を基にサーミスタチップの切断長さを調整することができるので、信頼度の高い製品を得ることができる。
また、面積が大きく焼成の終了したサーミスタ素体が製造工程の中間段階で得られるので、これに印刷法でガラス原料膜を施すことが可能であり、これを焼成することによってサーミスタ素体の表面にガラスなどの被覆を形成できるので、製品の坑折強度を向上できるとともに、測定環境からサーミスタ素体を保護することができる。
【0013】
【実施例】
以下に、図1乃至図4を参照して本発明の実施例について説明する。
【0014】
図4において、15は原料シートである。原料シートはNTCサーミスタ原料シートを1ないし10層積層して圧着することによって作製される。
【0015】
この原料シート(15)の上面に内部電極パターン(21)を印刷法により形成し、乾燥する。乾燥後、内部電極パターンの上面にさらに原料シートを圧着させた後に、これを乾燥し、1100℃の温度で5時間焼成し、積層板(16)を作製する。
【0016】
この工程のうち、内部電極パターンの上面に原料シートを圧着した後に、この上面に内部電極パターンを形成し、さらに原料シートを置き、その上面に内部電極パターンを形成する。この工程を繰返すことにより複数層の内部電極を持った積層板ができる。
【0017】
この積層板の両面に印刷法により耐熱性絶縁皮膜原料としてガラス原料膜を形成し、850℃の温度で10分間焼成して、ウエハー状(55mm×38mm×0.45mm)の燒結体を得た。該燒結体を湿式切断機を用いて短冊状に切断した。切断後短冊状片の耐熱性絶縁皮膜を形成していない長尺方向の横断面に印刷法によりガラス膜を形成し850℃の温度で10分間焼成した。該焼成物を湿式切断機で切断してチップ(L1mm×W0.5mm×T0.45mm)を作製した。
【0018】
該チップのガラス層が形成されていない両端面に銀を主体とした電極材を付着させ再度焼成し、外部電極を形成させた。この外部電極の表面に電解メッキ法によりNiメッキを形成し、積層型チップサーミスタを作製した。本実施例においては内部電極は、1層のみとした。
【0019】
〈比較例〉
原料シートの上面に内部電極パターンを印刷法により形成し、乾燥する。乾燥後内部電極の上面にさらに原料シートを圧着させた後、これを乾燥し、ウエハー状物を作成、これを所定の長さに切断し、チップ状物を作成する。
これを1100℃の温度で5時間焼成した。サーミスタ素体面に銀とパラジウムを主体とした電極材を付着させ、乾燥後これを820℃の温度で5分間焼成し、外部電極を形成させ、積層型チップサーミスタを作製した。
【0020】
本比較例で作製した積層型チップサーミスタのサイズ及び内部電極の構造は実施例と同じである。
【0021】
〈実験〉
実施例と比較例により作製した積層型チップサーミスタを用いて以下の実験を行った。
[実験1]
実施例1と比較例1の方法で作製した積層型チップサーミスタをそれぞれ100個を任意に採取し、寸法の変動の差を調べた。結果は第1表のとおりである。
【0022】
実施例1の方が、変動が小さい。
[実験2]
実施例1と比較例1の方法で作製した積層型チップサーミスタをそれぞれ100個任意に採取し、50℃における抵抗値の変動を調べた。
実施例1の方が、変動が小さい。
【0023】
【発明の効果】
本発明によれば、小型で抵抗値の変動が少なく、抗折強度が高く、かつ環境適応性に優れた積層型チップサーミスタが得られる。
【図面の簡単な説明】
【図1】本発明の一実施例の断面図である。
【図2】本発明の一実施例の断面図である。
【図3】本発明の一実施例の断面図である。
【図4】本発明の積層型チップサーミスタの製造方法の一実施例の工程図である。
【符合の説明】
11 サーミスタ素体
12 内部電極
13 外部電極
14 耐熱性絶縁皮膜
15 原料シート層
16 積層板
17 耐熱性絶縁皮膜原料膜
18 短冊状片
19 チップ
20 金属メッキ
21 内部電極パターン[0001]
[Industrial applications]
The present invention relates to an electronic device, relates to a method of manufacturing the multilayer chip thermistors are mounted on a printed circuit circuit board, more particularly, to a method of manufacturing the multilayer chip thermistor having internal electrodes inside the element body.
[0002]
[Prior art]
Conventionally, a multilayer chip thermistor having an internal electrode inside a thermistor element is formed by integrally laminating the thermistor element and the internal electrode, drying the chip, cutting the chip to produce a chip, firing the chip, and further sintering the fired material. It was manufactured by forming an external electrode on the surface and then firing again. JP-A-6-53009 JP-A-6-61014
[0003]
[Problems to be solved by the invention]
However, according to this manufacturing method, since the chip is manufactured by cutting the unfired thermistor body, the resistance value of the fired product greatly fluctuates. In addition, since it is cut as a chip in an unfired stage, the element body is soft and the size of the cut piece and the cutting accuracy are limited, and it is difficult to handle a product of 1.0 mm × 0.5 mm or less.
[0004]
Furthermore, in order to extend the life of the product, even if it is coated with glass or the like to supplement the bending strength of the thermistor body, and it is going to reinforce the thermistor body, it is necessary to use the sputtering method because the chip is fine, In that case, the film was thin and was not suitable for practical use.
[0005]
[Means for Solving the Problems]
Therefore, in order to solve the problems of the above-described manufacturing method, instead of cutting the thermistor body at an unfired stage into a chip as a result of various studies, cutting the thermistor body after firing to form a chip, We found that we could solve the problem.
[0006]
[Means for Solving the Problems]
That is, the gist of the present invention is that a raw material sheet layer (15) formed by laminating a plurality of thermistor raw material sheets and a plurality of thermistor raw material sheets are arranged so as to extend in one direction on the upper surface of the raw material sheet layer. A step of laminating the internal electrode pattern (21) one to ten times and laminating a raw material sheet layer on the upper surface thereof to produce a laminated plate (16); (17) a step of applying and firing the same, a step of cutting the fired product into a strip in a direction intersecting with a direction in which the internal electrode pattern (21) extends, and a thermistor of the cut strip (18). A step of applying a heat-resistant insulating film raw material film in the longitudinal direction of the element body surface and then firing it again, a step of cutting the same, and a step of producing a chip (19); and forming a heat-resistant insulating film of the chip. Not done More becomes step of forming the external electrodes to the thermistor element body surface, collect part of the thermistor element after firing, examine the resistance value, and wherein adjusting the cut length of the thermistor chip on the basis of this resistance value This is a method for manufacturing a laminated chip thermistor.
[0007]
In the present invention, the number of layers of the internal electrodes is limited to 10 because if the number exceeds this, the thermistor element interposed therebetween becomes thin, and as a result, the durability of the product decreases.
[0008]
Note that the present invention is applied to an NTC thermistor, and the thermistor element is based on an oxide such as Mn, Co, Cu, and Fe.
[0009]
As the internal electrodes, those based on silver or palladium are mainly used.
[0010]
An external electrode mainly composed of silver is used, and a metal plating (20) is applied to the surface of the external electrode to improve adhesion to solder or environmental resistance.
[0011]
In addition, the heat-resistant inorganic coating enhances the bending strength of the multilayer chip thermistor itself, and is used to protect the thermistor body from high temperatures and corrosive gases in the measurement environment. Glass or the like is optimally used.
[0012]
[Action]
In the present invention, for the manufacturing method of cutting after firing the thermistor body, a part of the thermistor piece is sampled after firing and the resistance value can be examined, and the cutting of the thermistor chip can be performed based on the resistance value. Since the length can be adjusted, a highly reliable product can be obtained.
In addition, since the thermistor element having a large area and which has been fired is obtained at an intermediate stage of the manufacturing process, it is possible to apply a glass raw material film to this by a printing method, and by firing this, the surface of the thermistor element is heated. Since a coating of glass or the like can be formed on the surface, the bending strength of the product can be improved, and the thermistor body can be protected from the measurement environment.
[0013]
【Example】
Hereinafter, with reference to FIGS examples of the present invention will be described.
[0014]
In FIG. 4 ,
[0015]
An internal electrode pattern (21) is formed on the upper surface of the raw material sheet (15) by a printing method, and dried. After drying, the raw material sheet is further pressed on the upper surface of the internal electrode pattern, and then dried and fired at a temperature of 1100 ° C. for 5 hours to produce a laminated plate (16).
[0016]
In this step, after the raw material sheet is pressed on the upper surface of the internal electrode pattern, an internal electrode pattern is formed on the upper surface, the raw material sheet is further placed, and the internal electrode pattern is formed on the upper surface. By repeating this process, a laminated plate having a plurality of layers of internal electrodes is obtained.
[0017]
A glass material film was formed as a heat-resistant insulating film material on both sides of the laminate by a printing method and baked at a temperature of 850 ° C. for 10 minutes to obtain a wafer-shaped (55 mm × 38 mm × 0.45 mm) sintered body. . The sintered body was cut into strips using a wet cutting machine. After the cutting, a glass film was formed by a printing method on a cross section of the strip in the longitudinal direction where the heat-resistant insulating film was not formed, and baked at a temperature of 850 ° C. for 10 minutes. The fired product was cut by a wet cutting machine to produce chips (L1 mm × W0.5 mm × T0.45 mm).
[0018]
An electrode material mainly composed of silver was attached to both end surfaces of the chip where the glass layer was not formed, and baked again to form external electrodes. Ni plating was formed on the surface of the external electrode by an electrolytic plating method to produce a multilayer chip thermistor. In this embodiment, the internal electrode has only one layer.
[0019]
<Comparative example>
An internal electrode pattern is formed on the upper surface of the raw material sheet by a printing method, and dried. After drying, the raw material sheet is further pressed onto the upper surface of the internal electrode, and then dried to produce a wafer-like material, which is cut into a predetermined length to produce a chip-like material.
This was fired at a temperature of 1100 ° C. for 5 hours. An electrode material mainly composed of silver and palladium was attached to the thermistor body surface, dried, and baked at a temperature of 820 ° C. for 5 minutes to form an external electrode, thereby producing a multilayer chip thermistor.
[0020]
The size and the structure of the internal electrode of the multilayer chip thermistor manufactured in this comparative example are the same as those in the example.
[0021]
<Experiment>
The following experiment was performed using the multilayer chip thermistor manufactured by the example and the comparative example.
[Experiment 1]
100 laminated chip thermistors produced by the method of Example 1 and Comparative Example 1 were arbitrarily sampled, and differences in dimensional variation were examined. The results are as shown in Table 1.
[0022]
Example 1 has smaller fluctuations.
[Experiment 2]
100 multilayer chip thermistors produced by the method of Example 1 and Comparative Example 1 were arbitrarily sampled, and the change in resistance at 50 ° C. was examined.
Example 1 has smaller fluctuations.
[0023]
【The invention's effect】
ADVANTAGE OF THE INVENTION According to this invention, the laminated chip thermistor which is small, has little variation in resistance value, has high bending strength, and is excellent in environmental adaptability is obtained.
[Brief description of the drawings]
FIG. 1 is a sectional view of one embodiment of the present invention.
FIG. 2 is a sectional view of one embodiment of the present invention.
FIG. 3 is a sectional view of one embodiment of the present invention.
FIG. 4 is a process chart of one embodiment of a method for manufacturing a multilayer chip thermistor of the present invention.
[Description of sign]
DESCRIPTION OF
Claims (1)
焼成後にサーミスタ片の一部を採取し、その抵抗値を調べ、この抵抗値を基にサーミスタチップの切断長さを調整することを特徴とする積層型チップサーミスタの製造方法。A raw material sheet layer (15) formed by laminating a plurality of thermistor raw material sheets and an internal electrode pattern (21) formed by being arranged in a plurality on the upper surface of the raw material sheet layer so as to extend in one direction are combined with one another. A laminated sheet (16) by laminating the raw material sheet layer on the upper surface thereof 10 times or more, and applying a heat-resistant insulating film raw material film (17) on both upper and lower surfaces of the laminated plate, followed by firing. And cutting the fired product into strips in a direction intersecting with the direction in which the internal electrode patterns (21) extend, and heat-resistant insulation in the longitudinal direction of the thermistor body surface of the cut strips (18). After the coating material film is applied, a step of firing it again, a step of cutting the same, and a step of manufacturing a chip (19), and a step of forming an external electrode on the surface of the thermistor element body on which the heat-resistant insulating film of the chip is not formed. Form More become a process,
A method for manufacturing a laminated chip thermistor, characterized in that a part of the thermistor piece is sampled after firing, the resistance value is checked, and the cutting length of the thermistor chip is adjusted based on the resistance value .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16200695A JP3580904B2 (en) | 1995-06-28 | 1995-06-28 | Manufacturing method of multilayer chip thermistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16200695A JP3580904B2 (en) | 1995-06-28 | 1995-06-28 | Manufacturing method of multilayer chip thermistor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001282451A Division JP3619881B2 (en) | 2001-09-17 | 2001-09-17 | Multilayer chip thermistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0917609A JPH0917609A (en) | 1997-01-17 |
JP3580904B2 true JP3580904B2 (en) | 2004-10-27 |
Family
ID=15746259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16200695A Expired - Lifetime JP3580904B2 (en) | 1995-06-28 | 1995-06-28 | Manufacturing method of multilayer chip thermistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3580904B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1154301A (en) * | 1997-08-07 | 1999-02-26 | Murata Mfg Co Ltd | Chip thermister |
JP4561430B2 (en) * | 2005-03-25 | 2010-10-13 | Tdk株式会社 | Multilayer chip varistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2591205B2 (en) * | 1989-12-28 | 1997-03-19 | 三菱マテリアル株式会社 | Thermistor |
JP3277292B2 (en) * | 1992-03-31 | 2002-04-22 | 太陽誘電株式会社 | Chip type thermistor and manufacturing method thereof |
-
1995
- 1995-06-28 JP JP16200695A patent/JP3580904B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0917609A (en) | 1997-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2591205B2 (en) | Thermistor | |
JP3580904B2 (en) | Manufacturing method of multilayer chip thermistor | |
JPH05335174A (en) | Laminated ceramic electronic component | |
JP3619881B2 (en) | Multilayer chip thermistor | |
JPH10116707A (en) | Chip type thermistor and its manufacturing method | |
JPH0897072A (en) | Multilayer ceramic device | |
JP3246258B2 (en) | Manufacturing method of chip thermistor and chip thermistor | |
JP3622853B2 (en) | Thermistor | |
JPS6339958Y2 (en) | ||
JPH09260105A (en) | Chip type thermistor and manufacturing method thereof | |
JPS63177402A (en) | Negative characteristic thermistor | |
JP2755212B2 (en) | Manufacturing method of negative characteristic thermistor | |
JP3226013B2 (en) | Manufacturing method of thermistor | |
JPH09266103A (en) | Chip thermistor and method for manufacturing the same | |
JPH08148363A (en) | Manufacturing for laminated inductor | |
JP2001167907A (en) | Chip-type thermistor and method of manufacturing the same | |
JPH054403U (en) | Thick film circuit board | |
JP2000357603A (en) | Chip-type thermistor and manufacture method thereof | |
JP2000082607A (en) | Chip-type thermistor and its manufacture | |
JPH04237172A (en) | Electrostrictive effect element | |
JP3092455B2 (en) | Method for forming base electrode for plating electronic components | |
JPH09266105A (en) | Chip thermistor and method for manufacturing the same | |
JP2001284101A (en) | Laminated chip thermistor and manufacturing method for the same | |
JP2001267176A (en) | Multilayer capacitor and manufacturing method therefor | |
JPH04243173A (en) | Electrostrictive effect element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20020108 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040607 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20040721 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080730 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080730 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090730 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090730 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100730 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100730 Year of fee payment: 6 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100730 Year of fee payment: 6 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110730 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110730 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120730 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120730 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130730 Year of fee payment: 9 |
|
EXPY | Cancellation because of completion of term |