JPH054403U - Thick film circuit board - Google Patents
Thick film circuit boardInfo
- Publication number
- JPH054403U JPH054403U JP5837291U JP5837291U JPH054403U JP H054403 U JPH054403 U JP H054403U JP 5837291 U JP5837291 U JP 5837291U JP 5837291 U JP5837291 U JP 5837291U JP H054403 U JPH054403 U JP H054403U
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- Prior art keywords
- thick film
- film resistor
- circuit board
- pattern
- resistor
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Abstract
(57)【要約】
【目的】 厚膜抵抗体にクラックが生じにくい厚膜回路
基板を提供する。
【構成】 厚膜回路基板は、基板本体１と、基板本体１
上に互いに間隔を隔てて対向する１対のパターン２の端
部３，４と、１対の端部３，４上に跨がって形成された
厚膜抵抗体５とを備えている。そして、縁部３ａ，４ａ
の厚膜抵抗体５と接触する部分は、厚膜抵抗体５の幅よ
りも長くなる形状を有している。
(57) [Summary] [Objective] To provide a thick film circuit board in which a thick film resistor is less likely to crack. [Structure] The thick film circuit board includes a board body 1 and a board body 1
The end portions 3 and 4 of the pair of patterns 2 facing each other with a space therebetween and the thick film resistor 5 formed over the pair of end portions 3 and 4 are provided. And the edges 3a, 4a
The portion contacting the thick film resistor 5 has a shape longer than the width of the thick film resistor 5.
Description
【０００１】[0001]
本考案は、厚膜回路基板、特に、基板本体上に厚膜抵抗体が配置された厚膜回 路基板に関する。 The present invention relates to a thick film circuit board, and more particularly to a thick film circuit board having a thick film resistor arranged on a substrate body.
【０００２】[0002]
従来の厚膜回路基板として、単層又は多層のセラミック基板の表面に配線パタ ーン及び互いに間隔を隔てて対向するパターン端部が形成され、また対向するパ ターン端部上に跨がって抵抗体が形成されたものがある。図７及び図８に、その ようなパターン端部２３，２４及び厚膜抵抗体２５を示す。 As a conventional thick film circuit board, a wiring pattern and pattern end portions facing each other at a distance are formed on the surface of a single-layer or multi-layer ceramic substrate, and straddle over the end portions of the pattern that face each other. Some have resistors formed. 7 and 8 show such pattern end portions 23 and 24 and the thick film resistor 25.
【０００３】 パターン端部２３，２４は、基板本体上に金属ペーストを塗布し焼成して形成 されるものである。厚膜抵抗体２５は、抵抗体ペーストをパターン端部２３，２ ４に跨がるように塗布し、焼成して形成されたものである。そして、パターン端 部２３，２４の対向側縁２３ａ，２４ａは直線形状である。すなわち、対向側縁 ２３ａ，２４ａのうち抵抗体と接触する幅方向部分（接触長）は、厚膜抵抗体２ ５の幅と同じ長さである。The pattern end portions 23 and 24 are formed by applying a metal paste on the substrate body and firing it. The thick film resistor 25 is formed by applying a resistor paste so as to straddle the pattern end portions 23 and 24 and firing it. The opposite side edges 23a and 24a of the pattern ends 23 and 24 are linear. That is, the width-direction portion (contact length) of the opposing side edges 23a, 24a in contact with the resistor has the same length as the width of the thick film resistor 25.
【０００４】[0004]
前記従来の厚膜回路基板においては、厚膜抵抗体２５が焼結してバルク状態に なった後、温度が下がり出すと厚膜抵抗体２５が収縮する。このとき、基板本体 の熱膨張率が厚膜抵抗体２５の熱膨張率より小さいと、厚膜抵抗体２５には図７ に示す矢印方向に応力が生じる。すると、厚膜抵抗体２５は、強度が弱いので、 図７及び図８で示すＡ点群に応力が集中して微小なクラックが生じる。厚膜抵抗 体２５にクラックが生じると、抵抗値が上がってしまい所望の抵抗値が得られな くなる。 In the conventional thick-film circuit board, the thick-film resistor 25 contracts when the temperature starts to drop after the thick-film resistor 25 is sintered into a bulk state. At this time, if the coefficient of thermal expansion of the substrate body is smaller than the coefficient of thermal expansion of the thick film resistor 25, stress is generated in the thick film resistor 25 in the direction of the arrow shown in FIG. Then, since the thick film resistor 25 has low strength, stress concentrates on the point group A shown in FIGS. 7 and 8, and a minute crack is generated. When the thick film resistor 25 is cracked, the resistance value increases, and the desired resistance value cannot be obtained.
【０００５】 また、最近では厚膜回路基板の高密度化要求に応えるために、基板本体上に直 接ＩＣチップを実装する構成が採用されている。その場合には、ＩＣチップと熱 膨張率を合わすために、基板本体として熱膨張率の低いガラスセラミック基板や ムライト基板等が使用される。これらの基板本体においては、厚膜抵抗体の熱膨 張率よりはるかに小さい熱膨張率となるので、収縮時に発生する応力がさらに大 きくなり、厚膜抵抗体にクラックがより生じやすくなる。In recent years, in order to meet the demand for higher density of thick film circuit boards, a structure in which a direct IC chip is mounted on the board body is adopted. In that case, in order to match the thermal expansion coefficient with that of the IC chip, a glass ceramic substrate or a mullite substrate having a low thermal expansion coefficient is used as the substrate body. In these substrate bodies, the coefficient of thermal expansion is much smaller than the coefficient of thermal expansion of the thick film resistor, so that the stress generated at the time of contraction is further increased, and the thick film resistor is more likely to be cracked.
【０００６】 本考案の目的は、厚膜抵抗体にクラックが生じにくい厚膜回路基板を提供する ことにある。An object of the present invention is to provide a thick film circuit board in which a thick film resistor is less likely to crack.
【０００７】[0007]
本考案に係る厚膜回路基板は、基板本体と、基板本体上に互いに間隔を隔てて 対向する１対の端部を有する導体パターンと、１対の導体パターンの端部上に跨 がって形成された厚膜抵抗体とを備えている。導体パターンは厚膜抵抗体との幅 方向の接触長が、厚膜抵抗体の幅よりも長くなる形状を有している。 A thick film circuit board according to the present invention comprises a substrate body, a conductor pattern having a pair of ends facing each other on the substrate body at a distance, and a conductor pattern having a pair of conductor patterns extending over the ends of the conductor pattern. And a thick film resistor formed. The conductor pattern has a shape such that the contact length in the width direction with the thick film resistor is longer than the width of the thick film resistor.
【０００８】[0008]
本考案に係る厚膜回路基板では、厚膜抵抗体と接触する導体パターンの幅方向 の接触長が、厚膜抵抗体の幅より長くなっている。このため、厚膜抵抗体の焼成 時に、収縮する厚膜抵抗体に生じる応力の集中は緩和される。この結果、厚膜抵 抗体にクラックが生じにくくなる。 In the thick film circuit board according to the present invention, the contact length of the conductor pattern in contact with the thick film resistor in the width direction is longer than the width of the thick film resistor. Therefore, when the thick film resistor is fired, the concentration of stress generated in the contracting thick film resistor is relieved. As a result, the thick film antibody is less likely to crack.
【０００９】[0009]
図１は、本考案の一実施例としての厚膜回路基板の斜視図である。図において 、この厚膜回路基板のガラスセラミック本体１は、薄板状の部材であり、熱膨張 率が３０〜４０×１０-7／℃（４００℃）程度である。ガラスセラミック基板本 体１上には、互いに対向するパターン端部３，４を有する所定のパターンでプリ ントされた配線パターン２と、間隔を隔てて対向するパターン端部３，４上に跨 がるように形成された厚膜抵抗体５とが形成されている。FIG. 1 is a perspective view of a thick film circuit board according to an embodiment of the present invention. In the figure, the glass ceramic body 1 of this thick film circuit board is a thin plate-shaped member and has a coefficient of thermal expansion of about 30 to 40 × 10 −7 / ° C. (400 ° C.). On the glass-ceramic substrate body 1, a wiring pattern 2 printed in a predetermined pattern having pattern ends 3 and 4 facing each other and a pattern on the pattern ends 3 and 4 facing each other at a distance are provided. And the thick film resistor 5 formed as described above.
【００１０】 図２に示すように、パターン端部３，４は、互いに対向する側の縁部３ａ，４ ａが所定の角度で切り込みが入れられた三角波形状となっている。このパターン 端部３の対向側縁部３ａの突出部分の角度θは９０°に設定されている。このた め、厚膜抵抗体５の幅方向の長さに対して、縁部３ａの厚膜抵抗体と接触する接 触長は約１４４％長くなっている。As shown in FIG. 2, the pattern ends 3 and 4 have a triangular wave shape in which edges 3a and 4a on the opposite sides are cut at a predetermined angle. The angle θ of the protruding portion of the opposite side edge portion 3a of the pattern end portion 3 is set to 90 °. Therefore, the contact length of the edge portion 3a in contact with the thick film resistor 5 is about 144% longer than the length of the thick film resistor 5 in the width direction.
【００１１】 厚膜抵抗体５は、図２に示すように、パターン端部３，４に跨がるように基板 本体１上に形成されている。この厚膜抵抗体５の厚さは１２〜１５μｍ程度であ り、その熱膨張率は４０〜５０×１０-7／℃（４００℃）程度である。As shown in FIG. 2, the thick film resistor 5 is formed on the substrate body 1 so as to straddle the pattern end portions 3 and 4. The thick film resistor 5 has a thickness of about 12 to 15 μm and a coefficient of thermal expansion of about 40 to 50 × 10 −7 / ° C. (400 ° C.).
【００１２】 次に、前記厚膜回路基板の製造方法について説明する。最初にガラスセラミッ クのグリーンシートを積層化し、得られた積層体を焼成してガラスセラミック基 板本体１を得る。このガラスセラミック基板本体１の表面に、例えばスクリーン 印刷により、パターン端部３，４を含む配線パターン２用のパターンで導電性材 料を配置して、焼成する。次に、厚膜抵抗体５の材料である抵抗体ペーストを基 板本体１上にかつパターン端部３，４に跨がるように配置して、焼成する。焼成 の際、高温時に厚膜抵抗体５は焼結しバルク状態となる。そして温度が下がり出 すと、厚膜抵抗体５は収縮を始める。このとき、厚膜抵抗体５の熱膨張率が４０ 〜５０×１０-7／℃程度であるのに比べて、ガラスセラミックからなる基板本体 １の熱膨張率は３０〜４０×１０-7／℃程度であり大変小さくなっている。その ため、厚膜抵抗体５に比較的大きな応力が生じる。Next, a method of manufacturing the thick film circuit board will be described. First, glass ceramic green sheets are laminated, and the obtained laminated body is fired to obtain a glass ceramic substrate body 1. A conductive material is arranged on the surface of the glass ceramic substrate body 1 in a pattern for the wiring pattern 2 including the pattern end portions 3 and 4 by, for example, screen printing, and is baked. Next, a resistor paste, which is a material of the thick film resistor 5, is arranged on the substrate body 1 and straddling the pattern end portions 3 and 4 and fired. At the time of firing, the thick film resistor 5 is sintered at a high temperature to be in a bulk state. Then, when the temperature starts to decrease, the thick film resistor 5 starts contracting. At this time, the coefficient of thermal expansion of the thick film resistor 5 is about 40 to 50 × 10 −7 / ° C., whereas the coefficient of thermal expansion of the substrate body 1 made of glass ceramic is 30 to 40 × 10 −7 / It is about ℃ and very small. Therefore, a relatively large stress is generated in the thick film resistor 5.
【００１３】 しかし、本実施例においては、パターン３，４の縁部３ａ，４ａのうち厚膜抵 抗体５と接触する部分が厚膜抵抗体５の幅より長く形成されているので、厚膜抵 抗体５に生じる応力の集中が緩和され、厚膜抵抗体５にはクラックが生じにくく なる。However, in this embodiment, since the portions of the edges 3a and 4a of the patterns 3 and 4 that come into contact with the thick film resistor 5 are formed longer than the width of the thick film resistor 5, the thick film resistor 5 is formed. The stress concentration generated in the antibody 5 is relieved, and the thick film resistor 5 is less likely to be cracked.
【００１４】 〔他の実施例〕 図２に示すパターン端部３，４に代えて、図３に示すように、縁部が曲線形状 となっているパターン端部６，７を採用しても良い。また、図４に示すように円 弧状の凹部の繰り返しで形成された形状を有する縁部を備えたパターン端部９， １０としても良い。また、図５に示すように、突出する円弧状の凸部の繰り返し で形成された形状を有する縁部を備えたパターン端部１２，１３としても良い。 また、図６に示すように、対向する縁部が厚膜抵抗体５の幅方向に対して角度が 生じるような傾斜形状のパターン端部１５，１６としても良い。[Other Embodiments] Instead of the pattern ends 3 and 4 shown in FIG. 2, pattern ends 6 and 7 whose edges are curved as shown in FIG. 3 may be adopted. good. Alternatively, as shown in FIG. 4, the pattern end portions 9 and 10 may be provided with an edge portion having a shape formed by repeating arc-shaped concave portions. Further, as shown in FIG. 5, the pattern end portions 12 and 13 may be provided with an edge portion having a shape formed by repeating protruding arcuate convex portions. Further, as shown in FIG. 6, it is also possible to form pattern end portions 15 and 16 having an inclined shape such that opposing edges form an angle with respect to the width direction of the thick film resistor 5.
【００１５】 以上のいずれの実施例においても、パターン端部の厚膜抵抗体５との幅方向の 接触長が、厚膜抵抗体５の幅よりも長くなる形状を有しているので、前述したの と同様な効果が得られ、厚膜抵抗体５にはクラックが生じにくくなっている。In any of the above embodiments, the contact length of the pattern end portion with the thick film resistor 5 in the width direction is longer than the width of the thick film resistor 5. The same effect as described above is obtained, and the thick film resistor 5 is less likely to be cracked.
【００１６】 〔実験例〕実験例１ 熱膨張率が３０〜４０×１０-7／℃at４００℃のガラスセラミック基板を８５ ０℃〜１，００℃で４時間焼成した。そのガラスセラミック基板上にディポン社 のＮｏ．９１５３からなるペーストを図２で示すパターン端部３，４の形状に印 刷し、Ｎ2 ガス中で９００℃で１時間焼成した。さらに、デュポン社のＮｏ．６ ４００からなる抵抗体ペーストを印刷し、Ｎ2 ガス中で９００℃で１時間焼成し た。完成後に厚膜抵抗体５の部分を観察したが、クラックは認められなかった。 また、温度サイクルテスト（−４５℃〜１５０℃，２５０サイクル）でも、厚膜 抵抗体５の抵抗値の変化は微小（＋０．３％以下）であり、何ら問題は生じなか った。Experimental Example Experimental Example 1 A glass ceramic substrate having a coefficient of thermal expansion of 30 to 40 × 10 −7 / ° C. at 400 ° C. was fired at 850 ° C. to 100 ° C. for 4 hours. On the glass ceramic substrate, No. A paste made of 9153 was printed in the shape of the pattern end portions 3 and 4 shown in FIG. 2 and baked in N 2 gas at 900 ° C. for 1 hour. In addition, the DuPont No. A resistor paste made of 6400 was printed and baked in N 2 gas at 900 ° C. for 1 hour. After the completion, the portion of the thick film resistor 5 was observed, but no crack was observed. Further, in the temperature cycle test (-45 ° C to 150 ° C, 250 cycles), the change in the resistance value of the thick film resistor 5 was minute (+ 0.3% or less), and no problem occurred.
【００１７】実験例２ 厚膜抵抗体の幅の長さに対する、各パターン端部（図２）の厚膜抵抗体との幅 方向の接触長の比率を変化させ、クラック発生率，抵抗値変化及び量産性の状態 を調べた。なお、ここで言うクラック発生率は、熱膨張に起因するクラックの発 生率である。抵抗値変化は、厚膜抵抗体の変形による抵抗値の変化の度合いであ る。また、量産性は、各厚膜抵抗体間の特性のばらつきの大小に基づいて判断し た結果である。実験結果を表１に示す。 Experimental Example 2 The ratio of the contact length in the width direction of each pattern end (FIG. 2) to the width of the thick film resistor was changed to change the crack generation rate and the resistance value. And the state of mass productivity was investigated. The crack occurrence rate mentioned here is the occurrence rate of cracks due to thermal expansion. The change in resistance value is the degree of change in resistance value due to the deformation of the thick film resistor. The mass productivity is a result of judgment based on the magnitude of variation in characteristics among the thick film resistors. The experimental results are shown in Table 1.
【００１８】 表１において、１００％とは、縁部が直線状に厚膜抵抗体の幅方向に沿って形 成されている場合である。１４０％とは、パターン端部の先端が約９０℃の場合 である。２００％とは、パターン端部の先端が約６０℃の場合である。In Table 1, 100% means that the edge portion is linearly formed along the width direction of the thick film resistor. 140% is the case where the tip of the pattern end is about 90 ° C. 200% is the case where the tip of the pattern end is about 60 ° C.
【００１９】[0019]
【表１】 [Table 1]
【００２０】 表１から明らかなように、導体パターンの幅方向の接触長を厚膜抵抗体の幅に 対して長く設定すれば、クラック発生率，抵抗値変化及び量産性が共に改良され た。なお、上記値が２００％を超えると、導体パターンの対向側縁の形状が複雑 になり、量産性には不向きとなったり抵抗体の占有面積が大きくなってしまい、 実質的には使用できなくなる。As is clear from Table 1, when the contact length in the width direction of the conductor pattern is set longer than the width of the thick film resistor, the crack occurrence rate, resistance value change and mass productivity are improved. If the above value exceeds 200%, the shape of the opposite side edges of the conductor pattern becomes complicated, which is unsuitable for mass production or the occupied area of the resistor becomes large, so that it cannot be practically used. .
【００２１】[0021]
本考案に係る厚膜回路基板では、１対の導体パターンは厚膜抵抗体と接触する 幅方向の接触長が、厚膜抵抗体の幅より長くなる形状を有している。したがって 、厚膜抵抗体の焼成後に温度が下降するときに生じる応力の集中は緩和され、厚 膜抵抗体にクラックが生じにくくなる。 In the thick film circuit board according to the present invention, the pair of conductor patterns has a shape in which the contact length in the width direction in contact with the thick film resistor is longer than the width of the thick film resistor. Therefore, the concentration of stress that occurs when the temperature drops after firing the thick film resistor is relaxed, and cracks are less likely to occur in the thick film resistor.
【図１】本考案の一実施例が採用としての厚膜回路基板
の斜視概略図。FIG. 1 is a schematic perspective view of a thick film circuit board adopted by an embodiment of the present invention.
【図２】パターン端部及び厚膜抵抗体の平面図。FIG. 2 is a plan view of a pattern end portion and a thick film resistor.
【図３】別の実施例の図２に相当する図。FIG. 3 is a diagram corresponding to FIG. 2 of another embodiment.
【図４】さらに別の実施例の図２に相当する図。FIG. 4 is a view corresponding to FIG. 2 of still another embodiment.
【図５】さらに別の実施例の図２に相当する図。FIG. 5 is a view corresponding to FIG. 2 of still another embodiment.
【図６】さらに別の実施例の図２に相当する図。FIG. 6 is a view corresponding to FIG. 2 of still another embodiment.
【図７】従来例の図２に相当する図。FIG. 7 is a diagram corresponding to FIG. 2 of a conventional example.
【図８】図７の従来例の縦断面図。8 is a vertical cross-sectional view of the conventional example of FIG.
１ 基板本体 ２ パターン ３，４，６，７，９，１０，１２，１３，１５，１６
パターン端部 ５ 厚膜抵抗体1 substrate body 2 pattern 3,4,6,7,9,10,12,13,15,16
Pattern end 5 Thick film resistor
Claims (1)
を隔てて対向する１対の端部を有する導体パターンと、
前記１対の導体パターンの端部上に跨がって形成された
厚膜抵抗体とを備えた厚膜回路基板において、 前記導体パターンは前記厚膜抵抗体との幅方向の接触長
が、前記厚膜抵抗体の幅よりも長くなる形状を有してい
ることを特徴とする厚膜回路基板。Claims for utility model registration: 1. A substrate body, and a conductor pattern having a pair of end portions facing each other on the substrate body with a space therebetween.
In a thick film circuit board including a thick film resistor formed over the ends of the pair of conductor patterns, the conductor pattern has a contact length in the width direction with the thick film resistor, A thick film circuit board having a shape longer than the width of the thick film resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5837291U JPH054403U (en) | 1991-06-27 | 1991-06-27 | Thick film circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5837291U JPH054403U (en) | 1991-06-27 | 1991-06-27 | Thick film circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH054403U true JPH054403U (en) | 1993-01-22 |
Family
ID=13082498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5837291U Pending JPH054403U (en) | 1991-06-27 | 1991-06-27 | Thick film circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH054403U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08203701A (en) * | 1995-01-30 | 1996-08-09 | Matsushita Electric Ind Co Ltd | Chip-type fixed resistor |
-
1991
- 1991-06-27 JP JP5837291U patent/JPH054403U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08203701A (en) * | 1995-01-30 | 1996-08-09 | Matsushita Electric Ind Co Ltd | Chip-type fixed resistor |
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