JP3516623B2 - 半導体結晶の製造方法 - Google Patents

半導体結晶の製造方法

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Publication number
JP3516623B2
JP3516623B2 JP2000003347A JP2000003347A JP3516623B2 JP 3516623 B2 JP3516623 B2 JP 3516623B2 JP 2000003347 A JP2000003347 A JP 2000003347A JP 2000003347 A JP2000003347 A JP 2000003347A JP 3516623 B2 JP3516623 B2 JP 3516623B2
Authority
JP
Japan
Prior art keywords
layer
superlattice
heat treatment
semiconductor crystal
sigec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000003347A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000269476A (ja
JP2000269476A5 (enExample
Inventor
徹 齋藤
好彦 神澤
幸治 片山
克弥 能澤
岳 菅原
実 久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2000003347A priority Critical patent/JP3516623B2/ja
Publication of JP2000269476A publication Critical patent/JP2000269476A/ja
Application granted granted Critical
Publication of JP3516623B2 publication Critical patent/JP3516623B2/ja
Publication of JP2000269476A5 publication Critical patent/JP2000269476A5/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2000003347A 1999-01-14 2000-01-12 半導体結晶の製造方法 Expired - Fee Related JP3516623B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000003347A JP3516623B2 (ja) 1999-01-14 2000-01-12 半導体結晶の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP764299 1999-01-14
JP11-7642 1999-01-14
JP2000003347A JP3516623B2 (ja) 1999-01-14 2000-01-12 半導体結晶の製造方法

Publications (3)

Publication Number Publication Date
JP2000269476A JP2000269476A (ja) 2000-09-29
JP3516623B2 true JP3516623B2 (ja) 2004-04-05
JP2000269476A5 JP2000269476A5 (enExample) 2004-08-26

Family

ID=26341977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000003347A Expired - Fee Related JP3516623B2 (ja) 1999-01-14 2000-01-12 半導体結晶の製造方法

Country Status (1)

Country Link
JP (1) JP3516623B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60128647T2 (de) * 2000-03-27 2007-09-20 Matsushita Electric Industrial Co., Ltd., Kadoma Sigec halbleiterkristall und seine herstellung
JP3451325B2 (ja) 2001-03-26 2003-09-29 名古屋大学長 シリコン・ゲルマニウム・カーボン三元混晶膜の作製方法及びシリコン・ゲルマニウム・カーボン三元混晶膜
JP3461819B2 (ja) * 2001-06-14 2003-10-27 松下電器産業株式会社 半導体結晶膜の製造方法
KR100425579B1 (ko) * 2001-07-21 2004-04-03 한국전자통신연구원 게르마늄 조성비에 따라 다른 종류의 소스를 사용하는실리콘 게르마늄 박막 형성 방법
JP3719998B2 (ja) * 2002-04-01 2005-11-24 松下電器産業株式会社 半導体装置の製造方法
US8029620B2 (en) * 2006-07-31 2011-10-04 Applied Materials, Inc. Methods of forming carbon-containing silicon epitaxial layers
EP1933384B1 (en) * 2006-12-15 2013-02-13 Soitec Semiconductor heterostructure
CN118412373B (zh) * 2024-06-28 2024-09-27 合肥欧益睿芯科技有限公司 含超晶格外延插入的外延片及其制备方法、晶体管

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Ｐ．Ｚａｕｍｓｅｉｌ ｅｔ．ａｌ．，Ｃｏｍｐａｒｉｓｏｎ ｏｆ ｔｈｅ ｔｈｅｒｍａｌ ｓｔａｂｉｌｉｔｙ ｏｆ Ｓｉ０．６０３Ｇｅ０．３９７／Ｓｉ ａｎｄ Ｓｉ０．５９７Ｇｅ０．３９１Ｃ０．０１２／Ｓｉ ｓｕｐｅｒｌａｔｔｉｃｅ，Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，１９９７年 ５月 １日，ｖｏｌ．８１ ｎｏ．９，ｐｐ．６１３４−６１４０
Ｐｅｒｅｚ−Ｒｏｄｒｉｇｕｅｚ，Ａ ｅｔ．ａｌ．，Ｉｏｎ ｂｅａｍ ｓｙｎｔｈｅｓｉｓ ａｎｄ ｒｅｃｒｙｓｔａｌｌｉｚａｔｉｏｎ ｏｆ ａｍｏｒｐｈｏｕｓ ＳｉＧｅ／ＳｉＣ ｓｔｒｕｃｔｕｒｅｓ，Ｎｕｃｌｅａｒ Ｉｎｓｔｒｕｍｅｎｔｓ ａｎｄ Ｍｅｔｈｏｄｓ ｉｎ Ｐｈｙｓｉｃｓ Ｒｅｓｅａｒｃｈ Ｂ，Ｅｌｓｅｖｉｅｒ Ｓｃｉｅｎｃｅ，１９９６年１２月 ２日，Ｖｏｌ．１２０，ｐｐ．１５１−１５５

Also Published As

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