JP3478315B2 - Epoxy resin composition for semiconductor encapsulation and semiconductor device encapsulated with the resin composition - Google Patents
Epoxy resin composition for semiconductor encapsulation and semiconductor device encapsulated with the resin compositionInfo
- Publication number
- JP3478315B2 JP3478315B2 JP31840295A JP31840295A JP3478315B2 JP 3478315 B2 JP3478315 B2 JP 3478315B2 JP 31840295 A JP31840295 A JP 31840295A JP 31840295 A JP31840295 A JP 31840295A JP 3478315 B2 JP3478315 B2 JP 3478315B2
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- weight
- semiconductor encapsulation
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体封止用エポキ
シ樹脂組成物及び該樹脂組成物で封止した半導体装置に
関する。TECHNICAL FIELD The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device encapsulated with the resin composition.
【０００２】[0002]
【従来の技術】ＩＣ、ＬＳＩ等の半導体装置としては、
プラスチックパッケージと呼ばれる樹脂封止型のものが
主流となっており、この樹脂封止には従来よりエポキシ
樹脂組成物が用いられてきた。2. Description of the Related Art As semiconductor devices such as IC and LSI,
A resin-sealed type called a plastic package has become mainstream, and an epoxy resin composition has been conventionally used for this resin sealing.
【０００３】一方、これら半導体装置を組み込む電気製
品の小型化に伴い、パッケージの小型・薄型化が進むと
共に、パッケージの基板への実装方法も高密度実装に適
した表面実装方式化する傾向にある。On the other hand, along with the miniaturization of electric products incorporating these semiconductor devices, the miniaturization and thinning of the packages are progressing, and the packaging method of the package on the substrate tends to be the surface mounting method suitable for high-density packaging. .
【０００４】これらの表面実装方式では、基板へ半導体
装置を半田付けする際に、ＩＲリフローやＶＰＳリフロ
ー等の装置を用いるため、搭載したパッケージ自体が短
時間に２００℃以上の高温に晒されることになる。In these surface mounting methods, when a semiconductor device is soldered to a substrate, a device such as IR reflow or VPS reflow is used, so that the mounted package itself is exposed to a high temperature of 200 ° C. or higher in a short time. become.
【０００５】この時、パッケージ中に含有される水分が
気化し、この蒸気圧は樹脂と素子／リードフレーム等の
インサートとの界面において剥離応力として働き、これ
ら界面での剥離、薄型のパッケージでは更にパッケージ
の膨れやクラックに至ってしまう。At this time, the moisture contained in the package is vaporized, and this vapor pressure acts as peeling stress at the interface between the resin and the insert of the element / lead frame, etc., peeling at these interfaces, and further in thin packages. This will lead to package swelling and cracking.
【０００６】このような症状が生じた場合、剥離やクラ
ックによりパッケージの耐湿信頼性の低下や膨れによる
半田接合不良等の問題を生じてしまうため、表面実装用
パッケージにおいてはこのような問題を回避する必要が
生じる。When such a symptom occurs, problems such as deterioration in reliability of moisture resistance of the package due to peeling or cracking and defective solder joint due to swelling occur. Therefore, such a problem is avoided in the surface mounting package. Need to do.
【０００７】半導体封止用エポキシ樹脂組成物での検討
では各種の樹脂における検討がなされており、インサー
トに対する接着力、硬化物の吸湿性、高温での強度が重
要であることが分かっている。Various kinds of resins have been studied in the study of epoxy resin compositions for semiconductor encapsulation, and it has been found that the adhesive strength to the insert, the hygroscopicity of the cured product, and the strength at high temperature are important.
【０００８】一方、インサートに対して強い接着力を示
す場合、成形金型との離形性が悪いといった問題が生じ
ていた。On the other hand, in the case of showing a strong adhesive force to the insert, there has been a problem that the releasability from the molding die is poor.
【０００９】また、充填剤量を多くすることは低吸水率
化、高強度化に対して有効ではあるが、流動性を低下さ
せるといった問題があり、これは樹脂の粘度にも影響さ
れる。Further, although increasing the amount of the filler is effective for lowering the water absorption rate and increasing the strength, it has a problem of lowering the fluidity, which is also affected by the viscosity of the resin.
【００１０】このため、樹脂の硬化物では吸水率を小さ
くできる系でも、その系の粘度が高く充填剤量を多く添
加できないといった問題点が生じている。Therefore, even in a system in which a cured product of a resin can reduce water absorption, there is a problem that the viscosity of the system is high and a large amount of filler cannot be added.
【００１１】また、樹脂系によってはエポキシ樹脂組成
物の保存安定性が著しく悪いといった問題を生じてい
る。Further, depending on the resin system, there is a problem that the storage stability of the epoxy resin composition is extremely poor.
【００１２】[0012]
【発明が解決しようとする課題】これまでの半導体封止
用エポキシ樹脂組成物では、上記のようなリフローによ
る半田付け時の耐熱性及び封止作業性の両立の点で問題
があった。The conventional epoxy resin compositions for semiconductor encapsulation have a problem in that both heat resistance and encapsulation workability at the time of soldering by reflow as described above are compatible.
【００１３】本発明はこのような課題に対し、半導体封
止に用いるエポキシ樹脂組成物において、インサートと
の密着性と成形金型との離型性を両立し、充填剤が多い
にもかかわらず優れた流動性を持った半導体封止用エポ
キシ樹脂組成物を提供し、上記半田付け方法に対して良
好な耐熱性を示す半導体装置を提供するものである。[0013] To solve the above problems, the present invention achieves both the adhesiveness with the insert and the releasability with the molding die in the epoxy resin composition used for semiconductor encapsulation, and the amount of the filler is large. It is intended to provide an epoxy resin composition for semiconductor encapsulation having excellent fluidity, and to provide a semiconductor device exhibiting good heat resistance in the soldering method.
【００１４】[0014]
【課題を解決するための手段】本発明者らは上記課題を
解決するために鋭意研究を重ねた結果、エポキシ樹脂と
硬化剤として特定の樹脂と特定の化合物とを組み合わせ
て含有させたエポキシ樹脂組成物が低吸湿、高接着の点
で優れ、同時に基板への半田付け実装時のクラックに対
して有効であることを見出した。また、そのエポキシ樹
脂組成物に特定のリン化合物を硬化促進剤として含有さ
せると、流動性に富み充填剤の高充填化が可能であり、
かつ保存安定性に富んでいるエポキシ樹脂組成物が得ら
れることを見出し、この知見に基づいて本発明を完成す
るに至った。As a result of intensive studies to solve the above problems, the present inventors have found that an epoxy resin containing an epoxy resin in combination with a specific resin and a specific compound as a curing agent. It has been found that the composition is excellent in terms of low moisture absorption and high adhesion, and at the same time is effective against cracks at the time of soldering and mounting on a substrate. Further, when a specific phosphorus compound is contained as a curing accelerator in the epoxy resin composition, it is possible to highly fill the filler with high fluidity,
Moreover, they have found that an epoxy resin composition having excellent storage stability can be obtained, and have completed the present invention based on this finding.
【００１５】すなわち、本発明は、下記（Ａ）〜（Ｄ）
成分
（Ａ）下記構造式１で表されるエポキシ樹脂を７０重量
％以上含有するエポキシ樹脂、That is, the present invention provides the following (A) to (D).
Component (A) An epoxy resin containing 70% by weight or more of the epoxy resin represented by the following structural formula 1,
【００１６】[0016]
【化５】
（式中ｎは０〜６の整数を表す。）
（Ｂ）１分子中に２個以上のフェノール性水酸基を有す
る化合物、（Ｃ）下記構造式２で表されるリン化合物[Chemical 5] (In the formula, n represents an integer of 0 to 6.) (B) a compound having two or more phenolic hydroxyl groups in one molecule, (C) a phosphorus compound represented by the following structural formula 2.
【００１７】[0017]
【化６】
及び（Ｄ）エポキシ樹脂組成物総量中６０〜９５重量％
の無機充填剤を含有することを特徴とする半導体封止用
エポキシ樹脂組成物を提供するものである。[Chemical 6] And (D) 60 to 95% by weight in the total amount of the epoxy resin composition
The present invention provides an epoxy resin composition for semiconductor encapsulation, which comprises the inorganic filler of
【００１８】[0018]
【発明の実施の形態】（Ａ）成分のエポキシ樹脂は上記
構造式１で表わされるエポキシ樹脂のみからなるもので
あってもよいし、それ以外に１分子中に２個以上のエポ
キシ基を有する他のエポキシ樹脂を総エポキシ樹脂中の
３０重量％まで併用してもよい。併用されるエポキシ樹
脂としてはｏ−クレゾールノボラック型エポキシ樹脂、
フェノールノボラック型エポキシ型樹脂、エピビス型エ
ポキシ樹脂が挙げられるが、好適には下記構造式３で表
されるエポキシ樹脂を全エポキシ樹脂に対し、２〜３０
重量％、好ましくは１０〜２０重量％の割合で用いる
と、より流動性を向上することが出来、充填剤の高充填
化の点からも好ましい。この場合、２重量％未満では流
動性向上の効果が乏しく、また３０重量％を超えて添加
すると離型性が悪化することがある。BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin as the component (A) may be composed only of the epoxy resin represented by the above structural formula 1, or else it has two or more epoxy groups in one molecule. Other epoxy resins may be used together up to 30% by weight of the total epoxy resin. As the epoxy resin used in combination, o-cresol novolac type epoxy resin,
Phenol novolac type epoxy type resin and epibis type epoxy resin can be mentioned, but the epoxy resin represented by the following structural formula 3 is preferably used in an amount of 2 to 30 with respect to all epoxy resins.
When it is used in an amount of 10% by weight, preferably 10 to 20% by weight, the fluidity can be further improved, and it is preferable from the viewpoint of increasing the filling amount of the filler. In this case, if it is less than 2% by weight, the effect of improving the fluidity is poor, and if it is added in excess of 30% by weight, the releasability may deteriorate.
【００１９】[0019]
【化７】
（式中、Ｒは水素原子又は炭素数１〜４の低級アルキル
基を表し、ｍは０〜６の整数を表す。）
なお、構造式３で表されるエポキシ樹脂は、１種単独で
用いてもよいし、２種以上を併用してもよい。[Chemical 7] (In the formula, R represents a hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, and m represents an integer of 0 to 6.) The epoxy resin represented by Structural Formula 3 is used alone. Or two or more kinds may be used in combination.
【００２０】硬化剤として用いられる（Ｂ）成分の１分
子中に２個以上のフェノール性水酸基を有する化合物と
しては、フェノールノボラック樹脂、クレゾールノボラ
ック樹脂等が挙げられるが、好適には下記構造式４で示
される化合物を用いることが、高接着力化、低吸水率化
の点より好ましい。また、これらを２種以上併用しても
よい。Examples of the compound having two or more phenolic hydroxyl groups in one molecule of the component (B) used as a curing agent include phenol novolac resin and cresol novolac resin, and the following structural formula 4 is preferred. It is preferable to use the compound represented by the formula (1) from the viewpoint of high adhesive strength and low water absorption. Also, two or more of these may be used in combination.
【００２１】[0021]
【化８】
（式中、ｐは０〜６の整数を表す。）
（Ｃ）成分の構造式２で示されるリン化合物は硬化促進
剤として用いられ、このリン化合物を用いることにより
流動性に富み、充填剤の高充填化の点で優れたエポキシ
樹脂組成物が得られる。また、このリン化合物を含有す
る本発明のエポキシ樹脂組成物は保存安定性の点でも優
れている。[Chemical 8] (In the formula, p represents an integer of 0 to 6.) The phosphorus compound represented by the structural formula 2 of the component (C) is used as a curing accelerator, and by using this phosphorus compound, it has excellent fluidity and a filler. It is possible to obtain an epoxy resin composition which is excellent in terms of high filling. The epoxy resin composition of the present invention containing this phosphorus compound is also excellent in storage stability.
【００２２】構造式２で表されるリン化合物は、例え
ば、以下の方法によって得られる。
１．トリフェニルフォスフィン４１．６ｇをアセトン１
２０ｇに溶解する。
２．ｐ−ベンゾキノン１７．６ｇをアセトン８０ｇに溶
解する。
３．１と２の溶液を室温〜８０℃で混合する。
４．析出した黄褐色結晶をろ過して取り出し、構造式２
で示されるリン化合物として用いる。ここで、溶剤とし
て上記アセトンの代わりにアセトンとトルエンの混合溶
媒等を使用してもよい。The phosphorus compound represented by Structural Formula 2 can be obtained, for example, by the following method. 1. 41.6 g of triphenylphosphine and 1 of acetone
Dissolve in 20 g. 2. 17.6 g of p-benzoquinone is dissolved in 80 g of acetone. 3. Mix solutions 1 and 2 at room temperature to 80 ° C. 4. The precipitated yellowish brown crystals were filtered out and structural formula 2
Used as a phosphorus compound represented by. Here, as the solvent, a mixed solvent of acetone and toluene may be used instead of the above acetone.
【００２３】（Ｃ）成分の配合割合は総エポキシ樹脂１
００重量部に対して通常０．１〜１０重量部、好ましく
は２〜７重量部が適当である。The mixing ratio of the component (C) is 1 total epoxy resin.
Generally, 0.1 to 10 parts by weight, preferably 2 to 7 parts by weight is suitable for 00 parts by weight.
【００２４】また、硬化促進剤として、構造式２で表さ
れるリン化合物以外の他の硬化促進剤、例えばトリフェ
ニルホスフィン、１，８−ジアザビシクロ（２．４．
６）ウンデセン−７等を併用してもよい。As the curing accelerator, a curing accelerator other than the phosphorus compound represented by the structural formula 2, for example, triphenylphosphine, 1,8-diazabicyclo (2.4.
6) Undecene-7 and the like may be used in combination.
【００２５】また、本発明のエポキシ樹脂組成物には、
成形時に金型との良好な離型性を持たせるため離型剤を
添加してもよい。この離型剤としては、酸化型若しくは
非酸化型のポリオレフィンを総エポキシ樹脂１００重量
部に対して０．０１〜１０重量部、好ましくは０．１〜
５重量部添加することが好ましい。これは０．０１重量
部未満では十分な離型性を得ることができず、また、１
０重量部を超えると接着性が阻害されるおそれがあるか
らである。この酸化型若しくは非酸化型のポリオレフィ
ンとしてはヘキスト社製Ｈ４やＰＥ、ＰＥＤシリーズ等
の数平均分子量が５００〜１００００程度の低分子量ポ
リエチレン等が挙げられる。また、これ以外の離型剤、
例えばカルナバワックス、モンタン酸エステル、モンタ
ン酸、ステアリン酸等と併用してもよい。酸化型若しく
は非酸化型のポリオレフィンに加えてこれら他の離型剤
を併用する場合、その配合割合は総エポキシ樹脂１００
重量部に対して通常０．１〜１０重量部、好ましくは
０．５〜３重量部の範囲が適当である。The epoxy resin composition of the present invention also contains
A mold release agent may be added in order to provide good mold release properties during molding. As the releasing agent, 0.01 to 10 parts by weight, preferably 0.1 to 10 parts by weight of an oxidized or non-oxidized polyolefin is added to 100 parts by weight of the total epoxy resin.
It is preferable to add 5 parts by weight. If it is less than 0.01 parts by weight, sufficient mold releasability cannot be obtained, and 1
This is because if the amount exceeds 0 parts by weight, the adhesiveness may be impaired. Examples of the oxidative or non-oxidative polyolefin include low molecular weight polyethylene having a number average molecular weight of about 500 to 10,000 such as H4, PE and PED series manufactured by Hoechst. Also, other release agents,
For example, carnauba wax, montanic acid ester, montanic acid, stearic acid and the like may be used in combination. When these other release agents are used in addition to the oxidized or non-oxidized polyolefin, the mixing ratio is 100% by weight of the total epoxy resin.
A suitable range is usually 0.1 to 10 parts by weight, preferably 0.5 to 3 parts by weight, based on parts by weight.
【００２６】ところで、構造式１で示されるエポキシ樹
脂を用いた場合、エポキシ樹脂組成物の難燃性が低下す
る。このため難燃剤を従来のｏ−クレゾール型エポキシ
樹脂を用いたエポキシ樹脂組成物において使用するより
も多量に配合することが好ましい。本発明において好適
に用いられる難燃剤としては、例えば、臭素化エポキシ
樹脂等の有機難燃剤や三酸化アンチモン等の無機難燃剤
が挙げられる。By the way, when the epoxy resin represented by the structural formula 1 is used, the flame retardancy of the epoxy resin composition is lowered. Therefore, it is preferable to add a larger amount of the flame retardant than that used in the epoxy resin composition using the conventional o-cresol type epoxy resin. Examples of the flame retardant preferably used in the present invention include organic flame retardants such as brominated epoxy resins and inorganic flame retardants such as antimony trioxide.
【００２７】また、これらの難燃剤をより多く配合した
場合、イオン性の不純物が多くなり、半導体装置の信頼
性を損なうことがある。このため、このようなエポキシ
樹脂組成物には、下記式５で示される無機イオン捕捉剤
（合成ハイドロタルサイト）を配合することが好まし
い。この無機イオン捕捉剤の配合割合は、総エポキシ樹
脂１００重量部対して、通常０．１〜３０重量部、好ま
しくは１〜５重量部の範囲が適当である。
Ｍｇ4.5Ａｌ2（ＯＨ）13ＣＯ3・３．５Ｈ2Ｏ 式５
（Ｄ）成分の無機充填剤としては、例えばシリカ、アル
ミナ、窒化アルミ、窒化ケイ素等が用いられる。その形
状としては、球状、不定形、楕円状のもの等が用いられ
る。また、その配合割合はエポキシ樹脂組成物総量中６
０〜９５重量％配合される。６０重量％未満では十分な
耐リフロークラック性を維持することができず、また９
５重量％を超えると成形のために十分な流動性を維持す
ることができないためである。If a larger amount of these flame retardants is added, the amount of ionic impurities increases, which may impair the reliability of the semiconductor device. Therefore, it is preferable to add an inorganic ion scavenger (synthetic hydrotalcite) represented by the following formula 5 to such an epoxy resin composition. The proportion of the inorganic ion scavenger is usually 0.1 to 30 parts by weight, preferably 1 to 5 parts by weight, based on 100 parts by weight of the total epoxy resin. Mg 4.5 Al 2 (OH) 13 CO 3 · 3.5H 2 O As the inorganic filler of the formula 5 (D), for example, silica, alumina, aluminum nitride, silicon nitride and the like are used. As the shape, a spherical shape, an amorphous shape, an elliptical shape, or the like is used. The mixing ratio is 6 in the total amount of the epoxy resin composition.
0 to 95% by weight is blended. If it is less than 60% by weight, sufficient reflow crack resistance cannot be maintained, and 9
This is because if it exceeds 5% by weight, sufficient fluidity cannot be maintained for molding.
【００２８】また、本発明に用いられるエポキシ樹脂組
成物には必要に応じてカーボンブラック等の顔料、シラ
ンカップリング剤等のカップリング剤、シリコーン等の
添加剤類を配合することができる。If desired, the epoxy resin composition used in the present invention may contain pigments such as carbon black, coupling agents such as silane coupling agents, and additives such as silicone.
【００２９】上記原材料を各々適宜配合し、この配合物
をミキシングロール機等の混練機にかけ混練して半溶融
状態の樹脂組成物とし、これを室温に冷却した後、公知
の手段により破砕し、必要に応じて打錠するといった一
連の工程により、目的とする半導体封止用エポキシ樹脂
組成物を得ることができる。The above raw materials are appropriately blended, and the blend is kneaded by a kneading machine such as a mixing roll machine to obtain a semi-molten resin composition, which is cooled to room temperature and then crushed by a known means, The desired epoxy resin composition for semiconductor encapsulation can be obtained by a series of steps such as tableting if necessary.
【００３０】本発明の半導体封止用エポキシ樹脂組成物
は、通常粉末状又はそれを打錠したタブレット錠の材料
として、半導体の封止に用いられる。The epoxy resin composition for semiconductor encapsulation of the present invention is usually used in the encapsulation of semiconductors as a powder or a tablet tablet material obtained by tableting the same.
【００３１】本発明のエポキシ樹脂組成物を用いて半導
体素子を封止すると目的とする半導体装置が得られる。
半導体素子の封止方法は特に限定するものではなく、通
常の方法、例えばトランスファー成形等の公知の成形方
法によって行うことができる。When a semiconductor element is encapsulated with the epoxy resin composition of the present invention, the intended semiconductor device is obtained.
The method for sealing the semiconductor element is not particularly limited, and a usual method, for example, a known molding method such as transfer molding can be used.
【００３２】このようにして得られる半導体装置は、イ
ンサートと封止材料の接着性に優れ、封止材料への吸湿
量が少なく、装置を基板に半田付けする際の耐クラック
性に優れていると同時に、半導体装置をトランスファー
成形する際に金型側へ張り付くこともなく優れた封止作
業性を有している。The semiconductor device thus obtained has excellent adhesiveness between the insert and the encapsulating material, a small amount of moisture absorbed by the encapsulating material, and excellent crack resistance when the device is soldered to the substrate. At the same time, it has excellent sealing workability without sticking to the mold side during transfer molding of the semiconductor device.
【００３３】[0033]
【実施例】以下、本発明の実施例及びその比較例によっ
て本発明を更に具体的に説明するが、本発明はこれらの
実施例に限定されるものではない。The present invention will be described in more detail below with reference to examples of the present invention and comparative examples thereof, but the present invention is not limited to these examples.
【００３４】まず、表１及び表２に示す重量部で各材料
を配合し予備混合した後、１０インチ径の二軸ロールを
使用して、混練温度８０〜９０℃、混練時間７〜１０分
の条件で混練し、冷却後粉砕して半導体封止用エポキシ
樹脂組成物を得た。First, the respective parts were blended in the parts by weight shown in Tables 1 and 2 and premixed, and then a kneading temperature of 80 to 90 ° C. and a kneading time of 7 to 10 minutes using a biaxial roll having a diameter of 10 inches. The mixture was kneaded under the following conditions, cooled, and then ground to obtain an epoxy resin composition for semiconductor encapsulation.
【００３５】この封止用エポキシ樹脂組成物を用い、ト
ランスファー成形機で、金型温度１８０℃、成形圧力７
０ｋｇｆ／ｃｍ2、硬化時間９０秒の条件で成形し、試
験片を作成した。後硬化は１７５℃、６時間行った。Using the epoxy resin composition for sealing, a mold temperature of 180 ° C. and a molding pressure of 7 were measured by a transfer molding machine.
A test piece was prepared by molding under the conditions of 0 kgf / cm 2 and a curing time of 90 seconds. Post-curing was performed at 175 ° C. for 6 hours.
【００３６】スパイラルフローはＥＭＭＩ１−６６に準
じて測定した。The spiral flow was measured according to EMMI1-66.
【００３７】熱時硬度は上記条件で成形した成形品のシ
ョア硬度を測定した。As the hardness during heating, the Shore hardness of a molded product molded under the above conditions was measured.
【００３８】Ａｌピール接着力は、厚み約０．０３ｍｍ
のアルミホイル上に成形した幅１０ｍｍの成形品にて測
定した。The Al peel adhesive strength is about 0.03 mm in thickness.
Was measured on a molded product having a width of 10 mm molded on the aluminum foil of.
【００３９】吸水率は上記成形条件にてφ５０×３ｍｍ
の円板を成形し、ＰＣＴ２０ｈ後の吸水率を求めた。The water absorption is φ50 × 3 mm under the above molding conditions.
The disk was molded, and the water absorption after 20 hours of PCT was determined.
【００４０】耐リフロークラック性はＱＦＰ１４２０
２．０ｍｍｔのパッケージを用い上記条件にて成形後、
８５℃／８５ＲＨ％の雰囲気にＸ時間放置した後、ＩＲ
リフロー炉にて加熱（炉内温度：ＭＡＸ２４５℃）し、
クラックの有無を超音波顕微鏡にて観察した。表１及び
表２中のＢ／Ａについて、Ａは試験に供したパッケージ
数を、Ｂはクラックの発生が観察されたパッケージの数
を示す。The reflow crack resistance is QFP1420.
After molding under the above conditions using a 2.0 mmt package,
After leaving in an atmosphere of 85 ° C / 85RH% for X hours, IR
Heat in a reflow furnace (temperature inside the furnace: MAX 245 ° C),
The presence or absence of cracks was observed with an ultrasonic microscope. Regarding B / A in Tables 1 and 2, A indicates the number of packages used in the test, and B indicates the number of packages in which cracking was observed.
【００４１】離型性はＣｒメッキを行ったステンレス板
表面に２０φの成形品を連続成形し、金属板と封止材の
剪断接着力の変化から判定した。◎は５ｓｈｏｔ以内で
０ｋｇｆとなったものを、○は５〜１０ｓｈｏｔで０ｋ
ｇｆとなったものを、×は１０ｓｈｏｔ成形しても０ｋ
ｇｆとならなかったものを表す。The mold releasability was judged from the change in the shear adhesive strength between the metal plate and the sealing material by continuously molding a 20φ molded product on the surface of a stainless steel plate plated with Cr. ◎ indicates 0kgf within 5shot, ○ indicates 0k in 5 to 10shot.
Even if the gf is changed to x, it will be 0k even if it is molded into 10 shots.
It shows that it did not become gf.
【００４２】表２中、高温放置（１７５℃）とは、パッ
ケージを１７５℃において放置してデバイスが不良品と
なった時間を表す。In Table 2, “high temperature storage (175 ° C.)” means the time when the device was defective after the package was stored at 175 ° C.
【００４３】表１に実施例１〜４及び比較例１〜４の結
果を示す。Table 1 shows the results of Examples 1 to 4 and Comparative Examples 1 to 4.
【００４４】表２に実施例５、６及び比較例５、６の結
果を示す。Table 2 shows the results of Examples 5 and 6 and Comparative Examples 5 and 6.
【００４５】これらの結果から判るように、本発明の半
導体封止用エポキシ樹脂組成物は耐リフロークラック
性、高温放置性、離型性等に優れている。As can be seen from these results, the epoxy resin composition for semiconductor encapsulation of the present invention is excellent in reflow crack resistance, leaving at high temperature, releasability and the like.
【００４６】[0046]
【表１】
その他の組成（実施例、比較例共通）
シランカップリング剤 ６部
カルナバワックス ２部
三酸化アンチモン １５部
カーボンブラック ２部
なお、構造式１のエポキシ樹脂としてはエポキシ当量２
６４の大日本インキ社製ＨＰ−７２００（商品名）を、
構造式３のエポキシ樹脂としてはエポキシ当量約１９２
の油化シェル社製ＹＸ−４０００Ｈ（商品名）を、ｏ−
クレゾールノボラック（ＯＣＮ）としてはエポキシ当量
約２００の住友化学社製ＥＳＣＮ−１９５（商品名）
を、Ｂｒ化エポキシ樹脂としては、エポキシ当量３７
５、臭素含量約５０重量％の住友化学社製ＥＳＢ−４０
０Ｔ（商品名）を用いた。[Table 1] Other compositions (common to examples and comparative examples) Silane coupling agent 6 parts Carnauba wax 2 parts Antimony trioxide 15 parts Carbon black 2 parts Epoxy equivalent 2 as the epoxy resin of structural formula 1
64 HP-7200 (trade name) manufactured by Dainippon Ink and Co.,
The epoxy equivalent of the structural formula 3 is about 192.
YX-4000H (trade name) manufactured by Yuka Shell Co., Ltd.
As cresol novolac (OCN), ESCN-195 (trade name) manufactured by Sumitomo Chemical Co., Ltd., which has an epoxy equivalent of about 200.
As a Br-epoxy resin, an epoxy equivalent of 37
5, ESB-40 manufactured by Sumitomo Chemical Co., Ltd. having a bromine content of about 50% by weight
0T (trade name) was used.
【００４７】硬化剤のフェノールノボラック樹脂として
は水酸基当量約１０６の日立化成社製ＨＰ−８５０Ｎ
（商品名）を用いた。The phenol novolac resin as the curing agent has a hydroxyl equivalent of about 106 and is HP-850N manufactured by Hitachi Chemical Co., Ltd.
(Trade name) was used.
【００４８】[0048]
【表２】
＊酸価１５〜３０ｍｇＫＯＨ／ｇ、数平均分子量約２０
００の分岐型ポリエチレンワックス
その他の組成（実施例、比較例共通）
シランカップリング剤 ６部
三酸化アンチモン １５部
カーボンブラック ２部[Table 2] * Acid value 15-30mgKOH / g, number average molecular weight about 20
Branched polyethylene wax of 00 and other compositions (common to Examples and Comparative Examples) Silane coupling agent 6 parts Antimony trioxide 15 parts Carbon black 2 parts
【００４９】[0049]
【発明の効果】本発明の半導体封止用エポキシ樹脂組成
物は半田付け時の耐熱性及びその他の信頼性、成形性に
優れたものであり、従って該封止用樹脂組成物で封止し
た半導体装置も半田付け時の耐熱性やその他の信頼性に
優れたものとなる。The epoxy resin composition for semiconductor encapsulation of the present invention is excellent in heat resistance during soldering, other reliability, and moldability. Therefore, it is sealed with the resin composition for encapsulation. The semiconductor device also has excellent heat resistance during soldering and other excellent reliability.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 23/29 Ｈ０１Ｌ 23/30 Ｒ 23/31 (72)発明者 萩原 伸介 茨城県つくば市和台48番 日立化成工業 株式会社 筑波開発研究所内 (72)発明者 古沢 文夫 茨城県つくば市和台48番 日立化成工業 株式会社 筑波開発研究所内 (72)発明者 赤城 清一 茨城県つくば市和台48番 日立化成工業 株式会社 筑波開発研究所内 (56)参考文献 特開 平７−118366（ＪＰ，Ａ) 特開 平６−298903（ＪＰ，Ａ) 特開 平３−40459（ＪＰ，Ａ) 特開 昭61−190523（ＪＰ，Ａ) 特開 昭57−24553（ＪＰ，Ａ) 特開 平４−202321（ＪＰ，Ａ) 特開 平７−70283（ＪＰ，Ａ) 特開 平７−228672（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) C08G 59/20 - 59/32 C08G 59/40 C08G 59/62 C08L 63/00 - 63/04 H01L 23/29 ─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. 7 Identification code FI H01L 23/29 H01L 23/30 R 23/31 (72) Inventor Shinsuke Hagiwara 48 Wadai, Tsukuba-shi, Ibaraki Hitachi Chemical Co., Ltd. Tsukuba Development Laboratory (72) Inventor Fumio Furusawa 48 Wadai, Tsukuba City, Ibaraki Prefecture Hitachi Chemical Co., Ltd. (56) Reference JP-A-7-118366 (JP, A) JP-A-6-298903 (JP, A) JP-A-3-40459 (JP, A) JP-A-61-190523 (JP, A) JP 57-24553 (JP, A) JP 4-202321 (JP, A) JP 7-70283 (JP, A) JP 7-228672 (JP, A) (58) Survey Areas (Int.Cl. 7 , DB name) C08G 59/20-59/32 C08G 59/40 C08G 59/62 C08L 63/00-63/04 H01L 23/29
Claims (7)
％以上含有するエポキシ樹脂、 【化１】 （式中ｎは０〜６の整数を表す。） （Ｂ）１分子中に２個以上のフェノール性水酸基を有す
る化合物、（Ｃ）下記構造式２で表されるリン化合物 【化２】 及び（Ｄ）エポキシ樹脂組成物総量中６０〜９５重量％
の無機充填剤を含有することを特徴とする半導体封止用
エポキシ樹脂組成物。1. An epoxy resin containing 70% by weight or more of an epoxy resin represented by the following structural formula (A), wherein the following components (A) to (D) (A): (In the formula, n represents an integer of 0 to 6.) (B) a compound having two or more phenolic hydroxyl groups in one molecule, (C) a phosphorus compound represented by the following structural formula 2 And (D) 60 to 95% by weight in the total amount of the epoxy resin composition
An epoxy resin composition for semiconductor encapsulation, comprising the inorganic filler of
ポキシ樹脂を２〜３０重量％含有するエポキシ樹脂であ
る請求項１記載の半導体封止用エポキシ樹脂組成物。 【化３】 （式中、Ｒは水素原子又は炭素数１〜４の低級アルキル
基を表し、ｍは０〜６の整数を表す。）2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the component (A) is an epoxy resin containing 2 to 30% by weight of an epoxy resin represented by the following structural formula 3. [Chemical 3] (In the formula, R represents a hydrogen atom or a lower alkyl group having 1 to 4 carbon atoms, and m represents an integer of 0 to 6.)
合物である請求項１又は２記載の半導体封止用エポキシ
樹脂組成物。 【化４】 （式中、ｐは０〜６の整数を表す。）3. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the component (B) is a compound represented by the following structural formula 4. [Chemical 4] (In the formula, p represents an integer of 0 to 6.)
類を（Ａ）成分の全エポキシ樹脂１００重量部に対し
０．０１〜１０重量部含有する請求項１〜３何れか記載
の半導体封止用エポキシ樹脂組成物。4. The epoxy resin for semiconductor encapsulation according to claim 1, which contains 0.01 to 10 parts by weight of oxidized or non-oxidized polyolefin with respect to 100 parts by weight of the total epoxy resin as the component (A). Resin composition.
三酸化アンチモンを含有する請求項１〜４何れか記載の
半導体封止用エポキシ樹脂組成物。5. The epoxy resin composition for semiconductor encapsulation according to claim 1, which contains a brominated epoxy resin or antimony trioxide as a flame retardant.
含有する請求項１〜５何れか記載の半導体封止用エポキ
シ樹脂組成物。 Ｍｇ4.5Ａｌ2（ＯＨ）13ＣＯ3・３．５Ｈ2Ｏ 式５6. The epoxy resin composition for semiconductor encapsulation according to claim 1, further comprising an inorganic ion scavenger represented by the following formula 5. Mg 4.5 Al 2 (OH) 13 CO 3 · 3.5H 2 O Formula 5
エポキシ樹脂組成物で封止したことを特徴とする半導体
装置。7. A semiconductor device, which is encapsulated with the epoxy resin composition for semiconductor encapsulation according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31840295A JP3478315B2 (en) | 1995-12-06 | 1995-12-06 | Epoxy resin composition for semiconductor encapsulation and semiconductor device encapsulated with the resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31840295A JP3478315B2 (en) | 1995-12-06 | 1995-12-06 | Epoxy resin composition for semiconductor encapsulation and semiconductor device encapsulated with the resin composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09157497A JPH09157497A (en) | 1997-06-17 |
| JP3478315B2 true JP3478315B2 (en) | 2003-12-15 |
Family
ID=18098758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31840295A Expired - Lifetime JP3478315B2 (en) | 1995-12-06 | 1995-12-06 | Epoxy resin composition for semiconductor encapsulation and semiconductor device encapsulated with the resin composition |
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| Country | Link |
|---|---|
| JP (1) | JP3478315B2 (en) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4248745B2 (en) | 1998-02-19 | 2009-04-02 | 日立化成工業株式会社 | Novel compound, curing accelerator, resin composition, and electronic component device |
| MY123645A (en) | 1999-07-22 | 2006-05-31 | Sumitomo Bakelite Co | Composition of polyepoxide, phenolic co-condensate and phosphonium-polyphenolic molecular association product |
| JP2001114872A (en) * | 1999-08-06 | 2001-04-24 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing and electronic part device |
| JP2001233933A (en) * | 2000-02-23 | 2001-08-28 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2001234035A (en) * | 2000-02-24 | 2001-08-28 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2003096310A (en) * | 2001-09-26 | 2003-04-03 | Shigeru Koshibe | Infrared light transparent resin composition |
| JP4569076B2 (en) * | 2002-06-05 | 2010-10-27 | 住友ベークライト株式会社 | Curing accelerator, epoxy resin composition, and semiconductor device |
| JP4265187B2 (en) * | 2002-09-20 | 2009-05-20 | 日立化成工業株式会社 | Electronic component apparatus provided with epoxy resin molding material and element for sealing |
| JP2005256009A (en) * | 2002-10-18 | 2005-09-22 | Hitachi Chem Co Ltd | Curable resin composition and electronic component device |
| JP2005240046A (en) * | 2002-10-18 | 2005-09-08 | Hitachi Chem Co Ltd | Curable resin composition and electronic part device |
| JP4752332B2 (en) * | 2002-10-18 | 2011-08-17 | 日立化成工業株式会社 | Curable resin composition and electronic component device |
| JP4752333B2 (en) * | 2002-10-18 | 2011-08-17 | 日立化成工業株式会社 | Curable resin composition and electronic component device |
| JP2004156035A (en) * | 2002-10-18 | 2004-06-03 | Hitachi Chem Co Ltd | Curing accelerator for curable resin, curable resin composition and electronic component device |
| US20050267286A1 (en) * | 2003-10-20 | 2005-12-01 | Shinya Nakamura | Curing accelerator for curing resin, curing resin composition, electronic component device and method for producing phosphine derivative |
| KR100893022B1 (en) | 2005-01-26 | 2009-04-15 | 히다치 가세고교 가부시끼가이샤 | Curing accelerator, curable resin composition, and electronic part/device |
| WO2006112396A1 (en) | 2005-04-15 | 2006-10-26 | Hitachi Chemical Co., Ltd. | Curing accelerating compound-silica composite material, method for producing curing accelerating compound-silica composite material, curing accelerator, curable resin composition, and electronic component |
| JP5923942B2 (en) | 2011-11-18 | 2016-05-25 | 日立化成株式会社 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
| WO2018123745A1 (en) | 2016-12-27 | 2018-07-05 | 日立化成株式会社 | Resin composition and electronic component device |
| SG11202008967WA (en) | 2018-03-16 | 2020-10-29 | Hitachi Chemical Co Ltd | Epoxy resin composition and electronic component device |
| SG11202012017VA (en) * | 2018-06-12 | 2021-01-28 | Showa Denko Materials Co Ltd | Curable resin composition and electronic component device |
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1995
- 1995-12-06 JP JP31840295A patent/JP3478315B2/en not_active Expired - Lifetime
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|---|---|
| JPH09157497A (en) | 1997-06-17 |
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