JP3408395B2 - Method for manufacturing semiconductor device - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which a semiconductor element is exposed and an accessory pattern such as a product name or a trademark is written on the exposed semiconductor element.

[0002]

2. Description of the Related Art In a conventional semiconductor device, a semiconductor element is mounted on an element mounting portion of a lead frame, and wire bonding is performed between the semiconductor chip, a bonding wire and an inner lead after surrounding the inner lead. However, if the semiconductor device is configured in this way, the thickness of the semiconductor device becomes thicker. Therefore, in order to achieve downsizing and thinning of a semiconductor device, a semiconductor device is provided in which an interposer provided with a solder ball or the like which is a direct connection terminal is arranged below a thin semiconductor element to expose the semiconductor element. ing. Further, the product name for distinguishing the semiconductor device, the accessory pattern such as a trademark, and the like are directly printed on the exposed surface of the semiconductor element.

[0003]

However, the exposed surface (that is, the surface) of the semiconductor element is polished to be a mirror surface or a silver color, and even if the accessory character is printed in white or black color on this portion. However, there is a problem that when light is irradiated, a large amount of reflected light is present, which is extremely difficult to visually recognize with an eye or an ordinary camera. Further, there is a problem in that, when an external impact or the like is applied to the semiconductor element, minute cracks may occur and the semiconductor element may be destroyed. The present invention has been made in view of the above circumstances, and a method for manufacturing a semiconductor device capable of preventing the damage such as cracks from occurring in the semiconductor element even when the characters written on the semiconductor element are easy to see and there is an external force. The purpose is to provide.

[0004]

A method according to the above-mentioned object.
The method for manufacturing a semiconductor device described above is a UV carrier sheet in which a gel-like thermosetting colored epoxy resin layer or an elastomer colored silicone resin layer is provided on a UV sheet having a photo-adhesive or thermoplastic adhesive layer. A first step of manufacturing a semiconductor device wafer by bonding a semiconductor device wafer body in which a large number of semiconductor devices are arranged in parallel, and an interposer having connection terminal lands is bonded to the semiconductor device surface side to form an electrical conduction circuit And the semiconductor device wafer manufactured in the first step is diced while leaving a part or all of the UV sheet attached to the front surface side, the resin layer covering one surface of the semiconductor element, and the semiconductor. A second step of dividing into semiconductor devices each including an element and an interposer connected to the element; and irradiating or heating the UV sheet with ultraviolet light, And a third step of individually separating the semiconductor device in which the resin layer is formed on the surface from the UV sheet, inks of different colors from the resin layer on the resin layer
Is printing accessories . The method of manufacturing a semiconductor device according to claim 2 is the method of manufacturing a semiconductor device according to claim 1, wherein after the semiconductor device wafer is manufactured in the first step, solder balls are bonded to the connection terminal lands of the interposer. Then, after that, dicing in the second step is performed. The method of manufacturing a semiconductor device according to claim 3 is the method of manufacturing a semiconductor device according to claim 1 or 2, wherein the semiconductor device wafer body bonded to the UV carrier sheet is bonded to the UV carrier sheet. In the previous step, the semiconductor element including the integrated circuit is previously formed.

In the method of manufacturing a semiconductor device according to claims 1 to 3, since a colored epoxy resin layer or an elastomer colored silicon resin layer is formed on the element exposed surface of each semiconductor device, The semiconductor elements that have become obsolete are hidden. Therefore, when an accessory such as a product name or a trade name of the semiconductor device is printed on this, there is no obstacle such as the character of the accessory being difficult to see due to the reflected light from the semiconductor element. Particularly, in the method for manufacturing a semiconductor device according to claim 2, a gel-like thermosetting colored epoxy resin layer or an elastomer-based colored silicon is formed on the bonding surface of the semiconductor device wafer body before bonding the solder balls. U with resin layer
A V carrier sheet is attached. Therefore,
Since there are no solder ball protrusions on the semiconductor device wafer,
The pressing and heating work when attaching the UV sheet becomes easy. In the method for manufacturing a semiconductor device according to claim 3, the semiconductor device wafer body bonded to the UV carrier sheet is a pre-process for bonding to the UV carrier sheet.
Since the semiconductor element is formed in advance, the semiconductor element can be accurately manufactured based on the conventional method using the mirror-polished portion of the semiconductor element as the reference surface.

[0006]

BEST MODE FOR CARRYING OUT THE INVENTION Next, referring to the attached drawings, an embodiment in which the present invention is embodied will be described to provide an understanding of the present invention. Here, FIGS. 1A to 1F are process explanatory views of a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIG. 2A is a back surface side of a semiconductor device wafer.
(B) is a cross-sectional view of a semiconductor device wafer with a UV carrier sheet attached, and (C) is a plan view of a completed semiconductor device. FIG. 3 is a cross-sectional view of a semiconductor device manufactured by the method for manufacturing the same semiconductor device.

First, a semiconductor device 10 manufactured by the method of manufacturing a semiconductor device according to one embodiment of the present invention will be described with reference to FIG. As shown in FIG.
The semiconductor device 10 according to the embodiment of the present invention is a CSP.
A (chip size package) type semiconductor device,
The semiconductor element 11 and the semiconductor element surface side below (that is,
Each electrode pad 1 of the semiconductor element 11 arranged on the back surface side)
5, an interposer 12 electrically connected to each other, a solder ball 13 provided on each connection terminal land of the interposer 12, and an epoxy resin formed in a print region on the upper surface (that is, the front surface side) of the semiconductor element 11. It has a colored epoxy resin layer 14. These will be described below.

The semiconductor element 11 is an element manufactured by using a silicon wafer as a material, and has an integrated circuit having a predetermined function inside, and its terminals are arranged as electrode pads 15 below the semiconductor element 11 side by side. ing. The upper surface (that is, the front surface side) 16 of the semiconductor element 11 is mirror-finished so that it is extremely difficult to see even if ordinary black or white characters or figures are printed.

The interposer 12 forming an electric conduction circuit is formed by forming a predetermined conductor pattern on a copper / polyimide film wiring board 17 and plating its terminals with Au plating. One end of 18 is bonded to each electrode pad 15 of the semiconductor element 11, and the solder ball 13 is bonded to the other end. This interposer 1
2 is bonded to the back surface side of the semiconductor element 11 with an adhesive, and the other parts except the exposed solder balls 13 are covered with a sealing resin 19 and a resist film 20.

A colored epoxy resin layer 14 made of epoxy resin is formed in a thickness range of 0.1 to 0.2 mm in a printed area on the surface of the semiconductor element 11 where the semiconductor element 11 is exposed. On the colored epoxy resin layer 14, white ink is used when the color of the colored epoxy resin layer 14 is black, and black ink is used when the color of the colored epoxy resin layer 14 is white. , An accessory 21 such as a product name or a symbol is printed. As a result, there is an advantage that the specularly reflected light from the semiconductor element 11 disappears and the printed characters and figures are easy to see. In addition, the colored epoxy resin layer 14 protects the semiconductor element 11 and has an advantage that cracks and chipping are less likely to occur.

Next, a method of manufacturing the semiconductor device 10 according to the embodiment of the present invention will be described with reference to FIGS. First, as shown in FIG. 1 (A), a gel-like thermosetting colored epoxy resin layer 14 is applied to one side of a UV sheet 22 having a photo-adhesive or thermoplastic adhesive layer, and the back side thereof is applied. U with protective sheet 23 attached
A V carrier sheet 24 is prepared. The UV carrier sheet 24 may be a commercially available tape-shaped one or may be manufactured in a factory. When this UV carrier sheet 24 is used, as shown in FIG. 1B, the protective sheet 23 is peeled off and the colored epoxy resin layer 1 is formed.
Expose 4

[0012] Next, in advance another step, the silicon wafer as a material with a plurality of semiconductor elements 11 are formed, the interposer 12 connected to the respective semiconductor elements 11 is disposed on the back surface side A semiconductor device wafer body 25 is prepared. The interposer 12 has the electrode pads 15 of the respective semiconductor elements 11 as described above.
A plurality of leads 18 one end of which is connected to
A connection terminal land 26 is provided on the other end side of 8, and the other portion is covered with the resist film 20. Then, as shown in FIG. 1C, the semiconductor device wafer body 2
The protective sheet 23 is peeled off from the surface of the UV carrier sheet 5 and the UV carrier sheet 24 having the gelled colored epoxy resin layer 14 exposed is heat-bonded. In this case, since the solder balls 13 are not attached to the back surface side of the semiconductor device wafer body 25 and the surface is a substantially flat surface, the UV carrier sheet 24 and the semiconductor device wafer body 25 can be pressed by a flat plate. Further, heating can be further performed (the above is the first step).

Thereafter, as shown in FIG. 1D, the solder balls 13 are joined to the respective connection terminal lands 26, and the semiconductor device wafer 27 is completed. Next, FIG. 2 and FIG.
As shown in (E), dicing is performed to separate the semiconductor device wafer 27 into individual semiconductor devices 10. 2 and 1
In (E), 28 is a dicing line and 28a is a surplus molding resin. Here, the dicing is performed so that the UV sheet 22 attached to the front surface of the semiconductor element 11 is entirely or partially left to be cut (the second step). Next, ultraviolet rays are applied to the UV sheet 22 to soften it, and a needle is applied from the surface side to give a predetermined semiconductor device 10
Is separated from the UV sheet 22. As a result, the single semiconductor device 10 can be taken out (the above is the third step). After that, as shown in FIG. 1F, the accessory 21 is clearly printed on the surface side of the semiconductor device 10 with an ink of a color different from that of the colored epoxy resin layer 14. In this case, white ink is used when the colored epoxy resin layer 14 is black, and black ink is used when the colored epoxy resin layer 14 is white. Thus, by forming the colored epoxy resin layer 14 on the mirror-finished semiconductor element 11, it is possible to prevent reflection of light and to visually recognize the printed accessory 21, and to protect the semiconductor element 11. Can be achieved.

In the above embodiment, the semiconductor device 1
The colored epoxy resin layer 14 for coating the exposed surface of No. 1
However, an elastomer-based colored silicone resin layer may be used. In this case, the semiconductor element 11 can be protected because it has a shock-absorbing property.
Further, although the embodiment has been described by specifying the shape of the semiconductor device 10, the present invention can be applied to any other BGA (ball grid array) type semiconductor device. Then, in the embodiment, a gel-like colored epoxy resin layer or an elastomer-based colored silicon resin layer is bonded to the back surface side of a semiconductor element wafer material in which a large number of semiconductor elements are formed in parallel from a silicon wafer. The present invention is also applicable to a case where an interposer for wiring from the electrode pad of each semiconductor element is subsequently joined to the front surface side of the semiconductor element wafer material.

[0015]

In the method of manufacturing a semiconductor device according to claims 1 to 3, since a colored epoxy resin layer or an elastomer colored silicon resin layer is formed on the exposed portion of each semiconductor element, a mirror surface is obtained. When the semiconductor element in the shape of a semiconductor device is hidden and an accessory such as a product name or a trade name of the semiconductor device is printed on the hidden semiconductor element, it can be visually recognized clearly. Further, by forming a colored epoxy resin layer or an elastomer colored silicon resin layer on the semiconductor element, cracks and chipping of the semiconductor element can be prevented. In particular, in the method for manufacturing a semiconductor device according to the second aspect, the pressing work at the time of attaching the UV carrier sheet becomes easy and the workability is excellent. Further, in the method of manufacturing a semiconductor device according to claim 3, since the semiconductor device wafer body bonded to the UV carrier sheet has semiconductor elements formed in advance, the semiconductor device is accurately manufactured by the conventional method. In addition to this, it is possible to perform processing such as interposer joining and solder ball joining in parallel for a large number of semiconductor elements, which improves manufacturing efficiency.

[Brief description of drawings]

1A to 1F are process explanatory views of a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2A is a back side of a semiconductor device wafer, and FIG.
[FIG. 3] is a cross-sectional view of a semiconductor device wafer with a UV carrier sheet attached, and (C) is a plan view of a completed semiconductor device.

FIG. 3 is a cross-sectional view of a semiconductor device manufactured by the same semiconductor device manufacturing method.

[Explanation of symbols]

10: semiconductor device, 11: semiconductor element, 12: interposer, 13: solder ball, 14: colored epoxy resin layer, 15: electrode pad, 16: upper surface (front surface side), 17:
Copper / polyimide film wiring board, 18: lead, 19:
Sealing resin, 20: resist film, 21: accessory, 2
2: UV sheet, 23: protective sheet, 24: UV carrier sheet, 25: semiconductor device wafer body, 26: connection terminal land, 27: semiconductor device wafer, 28: dicing lie, 28a: surplus mold resin

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Claims (3)

(57) [Claims] 1. A UV in which a gel-like thermosetting colored epoxy resin layer or an elastomer colored silicone resin layer is provided on a UV sheet having a photo-plastic or thermoplastic adhesive layer.
A semiconductor device wafer is manufactured by joining a semiconductor device wafer body in which a large number of semiconductor elements are arranged side by side on a carrier sheet, an interposer having connection terminal lands is joined to the semiconductor element surface side, and an electrical conduction circuit is formed. The first step, and the semiconductor device wafer manufactured in the first step is diced by leaving a part or all of the UV sheet attached to the front surface side, and the resin layer covering one surface of the semiconductor element. A second step of dividing the semiconductor sheet into semiconductor devices each including the semiconductor element and an interposer connected to the semiconductor element;
A third step of individually separating the semiconductor device having the resin layer formed on the surface from the sheet , and applying an ink of a color different from that of the resin layer onto the resin layer.
A method for manufacturing a semiconductor device, which comprises printing a cessary . 2. The semiconductor device according to claim 1, wherein after the semiconductor device wafer is manufactured in the first step, solder balls are joined to the connection terminal lands of the interposer, and then the dicing in the second step is performed. Production method. 3. The semiconductor device wafer body bonded to the UV carrier sheet has the semiconductor element including an integrated circuit formed in advance in a step before bonding to the UV carrier sheet. Of manufacturing a semiconductor device of.