JP3375828B2 - Method of manufacturing semiconductor device and photomask used in the method - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an electronic device such as a color filter or a semiconductor device, which is formed by patterning a thin film, and a photomask used therefor.

[0002]

2. Description of the Related Art For example, a TFT as a semiconductor device
A case where a liquid crystal display device including (thin film transistor) is formed using a stepper exposure device (hereinafter, also simply referred to as “stepper”) will be described. Generally, the TFT is formed by forming a thin film on a substrate, then forming a film made of a resin having photosensitivity on the thin film, and performing projection exposure through a photomask on which a desired photosensitive pattern is formed. The photosensitive pattern is processed and transferred to a film made of the resin, the transferred photosensitive pattern is developed to form a photosensitive resin image, and the thin film is etched using the photosensitive resin image as an etching mask. By peeling off the resin image, the thin film is patterned into a shape corresponding to the shape of the photosensitive resin image.

A stepper is used in the projection exposure process. For example, when a photosensitive pattern having a size larger than the maximum exposure area of the projection lens of the stepper is formed on the substrate, one photosensitive pattern is divided. A plurality of divided patterns are formed on one or a plurality of photomasks, and projection exposure processing is performed a plurality of times through the one or a plurality of photomasks. At this time, a movable blind provided in the optical path of the stepper forms a photomask by forming a light-shielding band having an appropriate width at the boundary between the divided patterns so that a desired divided pattern can be selected. . Next, a method of forming the photosensitive resin image by using the photomask having the plurality of divided patterns will be described. First, a thin film made of metal or a dielectric is formed on a glass substrate, and a resist as a photosensitive resin is uniformly applied on the thin film. In order to transfer the plurality of division patterns formed on the one or more photomasks to the resist, the division pattern is selected by the blind of the stepper and the projection exposure process is sequentially performed to form one photosensitive pattern on the resist. Transcribe. Further, the transferred photosensitive pattern is developed to form a photosensitive resin image, the thin film is etched, and then the resist is peeled off to obtain a thin film having a desired pattern. Repeating the same process multiple times, wiring pattern, insulating film pattern,
A liquid crystal display device including a TFT is formed by stacking semiconductor layer patterns and the like.

Such a conventional technique is disclosed in Japanese Patent Laid-Open No. 4-3056.
It is also described in the "Prior Art" section of Japanese Patent Publication No. 51-51.
FIG. 10 is an explanatory diagram showing an example of a conventional photomask. In FIG. 10, 11 indicates a first photomask, 12 indicates a second photomask, and 11b and 1
Reference numeral 2b indicates an area in which each division pattern is formed. Reference numerals 11a and 12a denote light-shielding bands formed on the first photomask 11 and the second photomask 12, respectively. Further, 11c is a region including a part of the division pattern formed on the first photomask 11 and a part of the light shielding band 11a, and 12c is a part of the division pattern formed on the second photomask 12. And the shading zone 12
It is a region including a part of a.

FIG. 11 is a partially enlarged explanatory view of the areas 11c and 12c shown in FIG. 10, FIG. 11 (a) showing the area 11c, and FIG. 11 (b) showing the area 12c.
Further, 11d and 12d are respectively shown in FIG.
7 shows setting positions of the blind 17e of the stepper shown in FIG. 7 on the first photomask and the second photomask. 11e shows a part of the division pattern formed in the region 11b shown in FIG. Moreover, 12e shows a part of division pattern formed in the area 12b shown in FIG.

FIG. 12 is an explanatory plan view showing the patterning of a thin film using the first photomask 11 and the second photomask 12 shown in FIG. In FIG. 12, 15 indicates a glass substrate, and 16a indicates the first.
16b shows a region in which a thin film patterned by using the photomask of No. 2 is formed, 16b indicates a region in which a thin film patterned by using the second photomask is formed, and 16c indicates regions 16a and 16b. Shows the boundary line of. In addition, between the glass substrate 15 and the thin film formed in the region 16a, and between the glass substrate 15 and the thin film formed in the region 16b, a thin film which is already patterned into a desired shape is formed. . Also, 16d
Is an area showing a part near the boundary line 16c.

FIG. 13 is a partially enlarged explanatory view showing an example of a thin film formed in the region 16d shown in FIG. 1
3b is a thin film patterned by using the first photomask or the second photomask, and 13a is the thin film 1.
It is a thin film already formed under 3b. 13c is a region near the boundary line 16c.

FIG. 14 shows a region 13c shown in FIG.
It is a partially enlarged explanatory view of FIG. FIG. 14 shows a thin film 13a and a thin film 13b relating to two TFTs adjacent to each other along the boundary line 16c. L ₃₁ and L ₃₅ indicate dimensions relating to the thin film 13a, L ₃₉ and L ₄₂ indicate dimensions relating to the thin film 13b, and L ₃₂ , L ₃₆ ,
L ₄₀ , L ₄₁ , L ₄₃ and L ₄₄ indicate dimensions relating to the thin film 13a and the thin film 13b, respectively. L ₃₃ is the center line of the dimension L ₃₁ , L ₃₄ is the center line of the dimension L ₃₂ , and L ₃₇ is the dimension L
_{35 is} the median line and L ₃₈ is the median line of dimension L ₃₆ . 14
In, the middle line L ₃₃ and the middle line L ₃₄ overlap, and the middle line L ₃₇ and the middle line L ₃₈ also overlap.

FIG. 15 is a partially enlarged explanatory view showing another example of the thin film formed in the region 16d shown in FIG.
13e is a thin film patterned by using the first photomask or the second photomask, and 13d is a thin film already formed under the thin film 13e. 13f
Is a region near the boundary line 16c.

FIG. 16 shows the area 13f shown in FIG.
It is a partially enlarged explanatory view of FIG. FIG. 14 shows a thin film 13d and a thin film 13e relating to two TFTs adjacent to each other along the boundary line 16c. L ₅₁ and L ₅₅ indicate dimensions relating to the thin film 13d, L ₅₉ and L ₆₂ indicate dimensions relating to the thin film 13e, L ₅₂ , L ₅₆ ,
L ₆₀ , L ₆₁ , L ₆₃ and L ₆₄ indicate dimensions relating to the thin film 13a and the thin film 13b, respectively. L ₅₃ is the center line of the dimension L ₅₁ , L ₅₄ is the center line of the dimension L ₅₂ , and L ₅₇ is the dimension L
_{55 is} the midline and L ₅₈ is the midline of dimension L ₅₆ . L ₆₅ is the left-right direction with respect to the midline L ₅₃ midline L ₅₄ (left and right in FIG. 16
Is the amount of misalignment in the horizontal direction), and L ₆₆ is the amount of misalignment in the horizontal direction with respect to the center line L _{58 and} the median line L ₅₇ . S ₁₁ and S ₁₃ are areas (hereinafter, also simply referred to as “overlap area”) of a portion where the thin film 13d on the left side of the boundary line 16c and the thin film 13e on the left side of the boundary line 16c overlap each other. Shows. The overlap area S ₁₁ is equal to the product of the dimension L ₅₉ and the dimension L _60, and the overlap area S ₁₃ is equal to the product of the dimension L ₅₉ and the dimension L ₆₁ . Further, S ₁₂ and S ₁₄ are areas of a portion where the thin film 13d on the right side of the boundary line 16c and the thin film 13e on the right side of the boundary line 16c overlap each other (hereinafter, also simply referred to as “overlap area”). ) Is shown. The overlap area S ₁₂ is equal to the product of the dimension L ₆₂ and the dimension L _63, and the overlap area S ₁₄ is equal to the product of the dimension L ₆₂ and the dimension L ₆₄ .

FIG. 17 is an explanatory view showing a schematic structure of a stepper for forming a resist pattern. 17a
Is a mercury lamp as an exposure light source, 17b is an elliptical mirror, 17c
Is a fly-eye lens, 17d is a shutter, 17e is a blind, 17f and 17g are mirrors, 17h is a condenser lens, 17i is a photomask, 17j is a projection lens, 15 is a glass substrate, and 17k is an X for moving the glass substrate 15. -Y moving stage, 17o shows a lens, respectively. In FIG. 17, the direction indicated by 17m is X
The direction indicated by 17n indicates the Y direction.

FIG. 18 is a sectional process explanatory view showing a method of patterning a thin film formed on a glass substrate using a conventional stepper. The right side of FIG. 18 shows a block that briefly describes each process. Reference numeral 15 is a glass substrate, 18a is a thin film made of chromium or the like formed on the glass substrate 15, and 18b is a photosensitive resin such as a resist. Reference numeral 17i is the photomask shown in FIG. 17, and the photomask 17i has a division pattern 17p formed therein. The arrow indicated by 18c in FIG. 18D indicates the direction in which the light of the stepper travels.

FIG. 19 is an explanatory diagram showing an equivalent circuit for one pixel of a liquid crystal display device using a TFT. Typically,
The liquid crystal display device includes a TFT including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, a gate electrode wiring connected to the gate electrode, a source electrode wiring connected to the source electrode, and a drain electrode. It includes a pixel electrode to be connected, and a liquid crystal cell driven in response to a change in voltage value of the pixel electrode. The liquid crystal cell is sandwiched between the substrate on which the TFT is formed and the counter substrate on which the color filter and the counter electrode are formed, and the drain electrode is interposed between the pixel electrode and the liquid crystal molecule. , Is connected to the counter electrode. The storage capacitor (C _s ) 19o is also generally connected to the counter electrode.
In FIG. 19, 19a is a TFT and 19b is a TFT19.
a is a gate electrode, 19c is a source electrode of the TFT 19a,
Reference numeral 19d represents a drain electrode of the TFT 19a, 19e represents a source electrode wiring, and 19f represents a gate electrode wiring. 19g shows equivalently the parasitic capacitance (C _gs ) between the gate electrode 19b and the source electrode 19c, and 19h shows the gate electrode 1.
9b shows equivalently the parasitic capacitance (C _gd ) between 9b and the drain electrode 19d, and 19i shows equivalently the OFF resistance (R _OFF ) between the source electrode 19c and the drain electrode 19d. Reference numeral 19j is a capacitance component (C _LC ) of the liquid crystal cell (not shown), 19k is a resistance component (R _LC ) of the liquid crystal cell, 1
9o shows the storage capacitor (C _S). The voltage of the signal applied to the source electrode wiring 19e is the drive voltage (V _s ).
And then, the voltage of the signal applied to the gate electrode wiring between the gate voltage (V _G). Further, reference numerals 19m and 19n
Indicates that the potentials of the portions indicated by reference numerals 19m and 19n change depending on the magnitude and / or polarity of the drive voltage (V _s ) and the gate voltage (V _G ).

FIG. 20 is an explanatory view showing an example of a stepper photomask and an example of a stepper blind.
In FIG. 20, 20 is a photomask, and 20a, 20
Reference numerals b, 20c, 20d, and 20e denote regions in which a division pattern is formed, 20f denotes a light-shielding band formed on the photomask 20, and 20g, 20h, 20i, and 20j denote blind light-shielding plates for steppers. Next, the operation of the stepper blind will be described. For example, when the projection exposure process is performed by selecting only the divided pattern 20a among the divided patterns 20a, 20b, 20c, 20d, and 20e formed by the light-shielding band 20f having an appropriate width and having an appropriate interval, the stepper The shading plates 20g, 20h, 20i, and 20j of the blind 17e (see FIG. 17) cover and shade the divided pattern 20a and the shading band 20f other than the portion surrounding the divided pattern 20a and the shading band 20f. Perform projection exposure processing. At this time, the blind shading plate is arranged such that the end of the shading plate overlaps the blind setting position set on the shading band 20f of the photomask.

Next, an example of a conventional thin film patterning method will be described with reference to the drawings. Figure 18 (a)
First, a thin film 18a made of a metal film, an insulating film, or the like is formed on the glass substrate 15 shown in (1) using a CVD device or a sputtering device (see FIG. 18B). Next, a photosensitive resin 18b such as a positive resist is applied onto the thin film 18a by a method such as spin coating (FIG. 18).
(See (c)). Next, the glass substrate 15 coated with the resist is subjected to a projection exposure process using the stepper shown in FIG. Photomask 17 used for the projection exposure process
At i (see FIG. 17), a photosensitive pattern corresponding to the pattern of the thin film to be formed on the glass substrate 15 is formed. The photosensitive pattern is divided into a plurality of division patterns. Here, a case will be described in which the projection exposure process is performed using a photomask having two divided patterns formed by dividing the photosensitive pattern into two. The two division patterns are a division pattern formed on the first photomask 11 shown in FIG. 10 and a division pattern formed on the second photomask 12 shown in FIG. 10, respectively. As shown in FIG.
For example, when the projection exposure process for the thin film formed in the region 16a on the left side with respect to the boundary line 16c on the glass substrate 15 is performed, it is formed on the photomask 17i.
Of the two division patterns, the division pattern 11e (FIG. 11) formed on the first photomask 11 shown in FIG.
See). Further, the glass substrate 1 shown in FIG.
When the projection exposure process related to the thin film formed in the region 16b on the right side of the boundary line 16c on the upper side 5 is performed, the second divided pattern shown in FIG. 10 among the two divided patterns formed on the photomask 17i. The division pattern 12e (see FIG. 11) formed on the photomask 12 is used. Figure 1
As shown by 0, a light-shielding band 11a or a light-shielding band 12a is formed around each of the two divided patterns. Further, in the area 11c of FIG. 10, as shown in FIG. 11, a light-shielding band 11a is formed on the right side, and a division pattern 11e is formed on the left side. Similarly, FIG.
A light-shielding band 12a is formed on the left side of the region 12c of
A division pattern 12e is formed on the right side.

Next, the projection exposure process performed using the stepper will be described in more detail. First, using the division pattern 11e, a part of which is shown in FIG.
The case of performing the projection exposure process related to the thin film formed in the region 16a of FIG. 12 will be described. First, in order to perform projection exposure processing using only the division pattern 11e,
The photomask 17i and the glass substrate 15 are respectively aligned with the stepper. After that, the blind 17e of the stepper (see FIG. 17) removes all other parts of the photomask 17i, leaving the region where the division pattern 11e is formed and the light-shielding band formed around the division pattern 11e. cover. Further, the XY moving stage 17k on which the glass substrate 15 is placed is moved so that the divided pattern 11e is projected and exposed at a predetermined position on the glass substrate 15. After that, in order to expose the resist without excess or deficiency, the shutter 17d is opened and exposed for a number of seconds so that the exposure amount becomes appropriate (see FIG. 18D), and the divided pattern 11e is transferred to the resist. Subsequently, in order to perform the projection exposure process using only the divided pattern 12e,
The photomask is exchanged to exchange the division pattern 11e with the division pattern 12e, and the photomask 17i is aligned with the stepper. After this,
By the blind 17e of the stepper (see FIG. 17),
All other parts of the photomask 17i are covered, leaving the region where the division pattern 12e is formed and the light-shielding band formed around the division pattern 12e. Further, the XY moving stage 17k on which the glass substrate 15 is placed is moved so that the divided pattern 12e is projected and exposed at a predetermined position on the glass substrate 15. Further, the division pattern 11e is exposed in the same manner as when the division pattern 11e is transferred to the resist, and the division pattern 12e is transferred to the resist. At this time, the joint boundary of the division pattern, which is caused by a slight decrease in the light intensity due to the interference of light near the end of the division pattern, a slight movement error of the XY moving stage 17k of the stepper, a manufacturing error of the photomask 17i, or the like. In order to prevent the unnecessary resist pattern from remaining in a portion (so-called omission when a negative resist is used), the divided pattern 12e is formed at the boundary portion.
Are exposed so as to overlap the divided pattern 11e by several μm.
After the exposure is completed, the resist is developed with a developing solution,
A resist 18b having a shape corresponding to the shape of the transferred divided pattern, that is, a photosensitive resin image is formed on the thin film (see FIG.
8 (e)), and then the thin film 18a formed on the glass substrate 15 is subjected to an etching treatment (see FIG. 18).
(See (f)), and then the resist 18b is removed (see FIG. 18 (g)). 18 (b) to FIG.
The step shown in 8 (g) is repeated a plurality of times to form a liquid crystal display device.

[0017]

The misalignment between the two divided patterns when the patterning is performed as described above will be described. In this specification, the lateral (left and right) direction of the paper surface is also referred to as the A direction, and the right side of the paper surface is also referred to as the positive direction. Furthermore, in order to simplify the description, the case where only the overlay deviation component in the A direction occurs will be described. Regions 11c and 12c of FIG. 10 whose partially enlarged explanatory view is shown in FIG. 11 are used when patterning the thin film formed in the region 16d on the glass substrate 15 of FIG. FIG. 13 shows the area 16d.
Shows a partially enlarged explanatory view in a preferable state, that is, in the case of being patterned according to the design. Further, FIG. 14 shows a partially enlarged explanatory view of a region 13c including two TFTs adjacent to the boundary line 16c (not actually recognized) of FIG. Thin film 13a shown in FIG.
Exists under the thin film 13b, and is formed by patterning in the same manner as the thin film 13b before the thin film 13b is formed. Dimension L ₄₀ , L ₄₁ ,
L ₄₃ and L ₄₄ are the dimensions of the portion where the thin film 13a and the thin film 13b overlap. The division pattern used when the projection exposure process is performed on the thin film 13b is the dimension L ₄₀ relating to the TFT on the left side of the boundary line 16c and the boundary line 16c.
On the other hand, the division pattern is designed so that the dimension L ₄₃ relating to the TFT on the right side has the same size. further,
Dimension L related to the TFT on the left side of the boundary line 16c
_The division pattern is designed so that ₄₁ and the dimension L ₄₄ related to the TFT on the right side of the boundary line 16c have the same size.

However, in reality, the patterning cannot be performed according to the design, and the position where the thin film 13a is formed and the thin film 13 are formed.
A displacement occurs between the position where b is formed, and overlay displacement amounts L ₆₅ and L ₆₆ are generated as shown in FIG. 16, resulting in a difference from the designed pattern.

Also, the relative directions and sizes of the overlay displacement amounts L ₆₅ and L ₆₆ differ between two adjacent TFTs via the boundary line 16c, and in many cases, the overlay displacement amount L _{65 is} large. And the amount of misalignment L ₆₆
Are not equal in size (L ₆₅ ≠ L ₆₆ ). In FIG. 16, the thin film 13e on the left side of the boundary line 16c among the thin films 13e.
Is displaced in the negative direction with respect to the thin film 13d,
Among the thin films 13e, the thin film 13e on the right side of the boundary line 16c is
There is a deviation in the positive direction with respect to the thin film 13d. Therefore, a relative difference in overlay deviation | L ₆₅ −L ₆₆ | occurs between the TFT formed on the left side and the TFT formed on the right side of the boundary line 16 c. The difference | L ₆₅ −L ₆₆ | in the overlay deviation amount causes a difference between the overlapping area S ₁₁ and the overlapping area S ₁₂ in FIG. 16 and a difference between the overlapping area S ₁₃ and the overlapping area S ₁₄ . For example, the thin film 13a
When a parasitic capacitance is formed in the portion where the thin film 13b and the thin film 13b overlap, the T formed on the left side of the boundary line 16c is a boundary.
A difference occurs between the parasitic capacitance of the FT and the parasitic capacitance of the TFT formed on the right side. That is, after the TFT is completed,
It corresponds to the difference between the parasitic capacitance (C _gd ) 19h and the parasitic capacitance (C _gs ) 19g shown in FIG. 19, and the electrical characteristics between two TFTs and two liquid crystal cells that are adjacent to each other via the boundary line 16c. And a difference in luminance occurs on the actual display screen.

That is, when a division pattern formed by dividing the photosensitive pattern is formed on a photomask and the display screen portion of the liquid crystal display device is formed using the photomask, the difference in the overlay deviation amount at the boundary portion of the division patterns. │L ₆₅ -L
₆₆ | A brightness difference occurs according to |, and depending on the degree, it is recognized as a boundary line and it is determined that the display quality is poor. The positional deviation between the thin film to be formed first and the thin film to be formed later is due to the projection exposure process for forming the thin film to be formed first and the thin film to be formed later. Thermal expansion (contraction) of the glass substrate when performing projection exposure processing
The main causes are fluctuations in the magnification when transferring the divided pattern to the resist due to a difference in the rate, rotation errors when performing alignment, and movement errors when moving the XY movement stage of the stepper. It occurs in.

Although it depends on the electrical characteristics of the TFT, in general, the problematic size of the difference in overlay deviation | L ₆₅ -L ₆₆ | is about 0.2 μm. In the prior art, the difference in the overlay deviation amount | L ₆₅ −
It is difficult to control L ₆₆ | to a problem-free level.

The present invention has been made in order to solve the above-mentioned problems. A photomask having a plurality of division patterns is formed, and the division patterns are joined together during projection exposure processing. Even when two photosensitive patterns are formed, by deforming a part of the division pattern formed on the photomask, the characteristic difference between the TFTs formed by using the different division patterns can be reduced, and the display screen An object of the present invention is to provide a method for manufacturing a semiconductor device, which can make the brightness uniform, and improve the quality of elements related to display quality, and a photomask used in the method.

[0023]

A projection exposure processing method according to the present invention complements the respective element portions of a plurality of division patterns used when forming elements in regions adjacent to each other with a boundary line therebetween. As described above, a plurality of divided patterns are formed, and a projection mask is used to perform a projection exposure process using a photomask having a plurality of divided patterns provided with regions to be formed so as to be caught by each other, thereby patterning a thin film.

According to the method of manufacturing a semiconductor device of the present invention, (a) a thin film is formed on a substrate, then a film made of a photosensitive resin is formed on the thin film, and (b) a desired photosensitive pattern is formed. Through the exposed photomask, a projection exposure process is performed to transfer the photosensitive pattern to the resin film, and (c) the transferred photosensitive pattern is developed to form a photosensitive resin image,
(D) A method for manufacturing a semiconductor device in which the thin film is etched by using the photosensitive resin image as an etching mask and then the thin film is peeled off to pattern the thin film into a shape corresponding to the shape of the photosensitive resin image. A film made of the resin is subjected to a projection exposure process through a plurality of photomasks each having a plurality of divided patterns formed by dividing the photosensitive pattern, and sequentially selects the plurality of divided patterns. And a photosensitive resin image is formed on the surface of the thin film, at a boundary portion between one of the plurality of division patterns and another division pattern adjacent to the one division pattern. , Single
The pattern of one TFT element is divided into a part of each of the one division pattern and the other division pattern.
Is characterized by using a plurality of photomasks, wherein the plurality of division patterns are formed so as to be complement each other.

The desired photosensitive pattern is formed by two divided patterns.

The desired photosensitive pattern is formed by at least three divided patterns.

A part of the division pattern transferred to the film made of resin by projection exposure processing using the one division pattern is subjected to projection exposure processing using the other division pattern and made a film made of the resin. The one division pattern and the other division pattern are formed so as to overlap a part of the transferred division pattern.

A part of the division pattern transferred to the film made of resin by projection exposure processing using the one division pattern is subjected to projection exposure processing using the other division pattern and made a film made of resin. The width overlapping with a part of the transferred divided pattern is 0.5 to 5 μm.

A photomask of the present invention is a photomask used in the method for manufacturing a semiconductor device according to claim 1,
A plurality of division patterns formed by dividing the photosensitive pattern are respectively formed on the plurality of photomasks,
A single TF is provided at the boundary between one division pattern and another division pattern adjacent to the one division pattern.
The pattern of the T element is divided into a part of each of the one division pattern and the other division pattern ,
Characterized by comprising formed as complements to.

A light-shielding band is formed around the one divided pattern, and a light-shielding band is formed around the other divided pattern. Each of the one divided pattern and the other divided pattern is formed. Part of the one division pattern is formed in a light-shielding band formed around the other division pattern, and a part of the other division pattern is formed in the one division pattern. The light-shielding band is formed around the pattern.

The desired photosensitive pattern is formed by two divided patterns.

The desired photosensitive pattern is formed by at least three divided patterns.

A part of the division pattern transferred to the film made of resin by projection exposure processing using the one division pattern is subjected to projection exposure processing using the other division pattern and made a film made of the resin. The one division pattern and the other division pattern are formed so as to overlap a part of the transferred division pattern.

A part of the division pattern transferred to the film made of resin by projection exposure processing using the one division pattern is subjected to projection exposure processing using the other division pattern and made a film made of the resin. 0.5 to 5 μm overlaps with a part of the transferred divided pattern.

[0035]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a semiconductor device manufacturing method of the present invention and a photomask used in the manufacturing method will be described below with reference to the drawings.

First Embodiment A first embodiment of a method of manufacturing a semiconductor device of the present invention and a photomask used in the method will be described. Figure 1
It is explanatory drawing which shows a pair of photomask used for the manufacturing method of the semiconductor device of this invention. In FIG. 1, reference numeral 1 is a first photomask, 2 is a second photomask, and 1b and 2b are regions where divided patterns are formed. In the present embodiment, a case will be described in which a photosensitive pattern used when performing projection exposure processing on one thin film is divided into two to form two photomasks. 1a and 2a are first
The light-shielding band formed on the photomask 1 and the second photomask 2 of FIG. Reference numeral 1c is a region showing a part of a boundary portion between the region 1b and the light shielding band 1a, and 2c is a region showing a part of a boundary portion between the region 2b and the light shielding band 2a. FIG. 2 is a partially enlarged explanatory view showing regions 1c and 2c of FIG. FIG. 2A is a partially enlarged explanatory view showing the division pattern and the light shielding band 1a formed in the region 1c, and FIG. 2B is a partially enlarged explanation showing the division pattern and the light shielding band 2a formed in the region 2c. It is a figure. Further, 1d and 2d are set positions on the photomask of the blind 17e of the stepper shown in FIG. 17, respectively. 1e, 1f, 2e, 2f
Indicates a region having a change between the division pattern and the light-shielding band (see FIG. 11) according to the related art and the division pattern and the light-shielding band according to the present embodiment. Reference numerals 1g and 2g indicate regions related to one TFT formed using the pair of photomasks shown in FIG.

FIG. 3 is a partially enlarged explanatory view showing a division pattern of a portion related to one TFT in the conventional division pattern 13b shown in FIG. In FIG. 3, 3
The regions indicated by a and 3b are regions forming a part of the TFT. In the above-mentioned conventional technique, the photomask in which the divided pattern is formed by dividing the photosensitive pattern into the left and the right is shown. However, in the present embodiment, the photosensitive pattern is divided and formed on the photomask, and a part of the division pattern formed at the boundary between the first photomask and the second photomask is further divided. Formed. For example, the region 1e of the division pattern formed on the first photomask
The region 3b of the divided pattern formed in (see FIG. 2) is formed in the region 2f (see FIG. 2) of the light-shielding band of the second photomask. On the other hand, the region 3a of the division pattern formed in the region 2e (see FIG. 2) of the division pattern formed in the second photomask is the region 1f (see FIG. 2) of the light-shielding band of the first photomask. Is formed. Therefore, the region 3b of the divided pattern formed in the region 1e (see FIG. 2) of the divided pattern formed on the first photomask is resisted by performing projection exposure processing using the second photomask. Is transcribed to. Similarly, the region 3a of the division pattern formed in the region 2e (see FIG. 2) of the division pattern formed on the second photomask is subjected to the projection exposure process by using the first photomask. Transferred to resist. As a result, by forming two divided patterns as shown in FIG. 2, a part of the divided pattern formed on the first photomask and a part of the divided pattern formed on the second photomask. And are complementary to each other.

FIG. 4 is a partially enlarged explanatory view showing a division pattern formed in the area 2g of FIG. 2, and the division pattern shown in FIG. 4 is 2h. FIG. 5 is a partially enlarged explanatory view showing a division pattern formed in the region 1g of FIG.
The division pattern shown in FIG. 5 is 1h. FIG. 6 is an explanatory diagram showing a state in which the division pattern 1h and the division pattern 2h are overlapped with each other in order to show the relationship between the division pattern 2h shown in FIG. 4 and the division pattern 1h shown in FIG. In FIG. 6, L ₁ , L ₂ , L ₃ , L ₄ , L ₅ , L
_{6, L 7, L 8,} L 9, L 10, L 11 represents a dimension of each part illustrated.

FIG. 7 is an explanatory plan view showing the patterning of the thin film using the first photomask 1 and the second photomask 2 shown in FIG. In FIG. 7, 5 indicates a glass substrate, 6a indicates a region where a thin film patterned by using a division pattern formed on the first photomask is formed, and 6b indicates a region formed on the second photomask. 6c indicates a region where a thin film patterned by using a divided pattern is formed, and 6c indicates a region 6
A boundary line between a and the region 6b is shown. In addition, between the glass substrate 5 and the thin film formed in the region 6a, and between the glass substrate 5 and the thin film formed in the region 6a, a thin film that has already been patterned into a desired shape is formed. . Further, 6d is an area showing a part near the boundary line 6c.

FIG. 8 is a partially enlarged explanatory view showing an example of a thin film formed in the region 6d shown in FIG. 8b is a thin film patterned using the first photomask or the second photomask, and 8a is a thin film already formed under the thin film 8b. 8c is a region near the boundary line 6c. S ₁ , S ₂ , S ₃ , S ₄ , S ₅ , S ₆ ,
S ₇ and S ₈ are the regions of the thin film 8b related to the TFT,
The area of the portion overlapping the thin film 8a, that is, the overlapping area is shown. In FIG. 8, the thin film 8b that is patterned using the first photomask among the thin films 8b is
There is a deviation in the negative direction with respect to the thin film 8a.
The thin film 8b patterned by using the second photomask of b is displaced in the positive direction with respect to the thin film 8a. FIG. 9 is a partially enlarged explanatory view of the area 8c shown in FIG. FIG. 9 shows a thin film 8a and a thin film 8b relating to two TFTs adjacent to each other along the boundary line 6c. L ₁₂ , L ₁₃ , L ₁₄ and L ₁₅ are the lengths of the portions where the thin film 8b formed using the first photomask and the thin film 8a formed under the thin film 8b overlap ( Hereinafter, it is simply referred to as "overlap length". On the other hand, L
Reference numerals ₁₆ , L ₁₇ , L ₁₈ and L ₁₉ denote overlapping lengths of the thin film 8b formed using the second photomask and the thin film 8a formed below the thin film 8b. Also, L ₂₀ ,
L ₂₁ , L ₂₂ and L ₂₃ represent the dimensions of the parts shown. _{S 1, S 2, S 3} , S 4 denotes a overlapping area is also shown in Figure 8.

Next, the division pattern formed on the first photomask and the division pattern formed on the second photomask will be described in detail. The thin film patterned by the division pattern of the region 1e shown in FIG. 2A and the thin film patterned by the division pattern of the region 2e shown in FIG. 2B are formed adjacent to each other. In addition, one photosensitive pattern is divided so that a part of the division pattern formed on the first photomask and a part of the division pattern formed on the second photomask are complementary to each other. A division pattern is formed.

Specifically, as shown in FIG. 3, a portion of the division pattern related to the TFT is divided into two areas, that is, an area 3a and an area 3b, and an area 1e of the division pattern formed on the first photomask. Areas other than the area 3b are formed by using the divided pattern formed in 1., and the area 3b is formed into a light-shielding pattern so as not to be exposed. On the other hand, of the division patterns formed on the second photomask, the division pattern formed in the area 2e is used to form the area other than the area 3a, and the area 3a is made a light-shielding pattern so as not to be exposed. In addition, using the light-shielding band formed on the first photomask, the region 3a of the TFT portion of the divided pattern is used.
Only the light-shielding pattern is formed so that the other regions are not exposed. On the other hand, a light-shielding band formed on the second photomask is used to form only the region 3b of the TFT portion of the divided pattern, and the other regions are made light-shielding patterns so as not to be exposed.

Next, the detailed overlap between the division pattern formed on the first photomask and the division pattern formed on the second photomask will be described with reference to FIGS. 4 to 6. In order to prevent unnecessary residue of the resist pattern as described in the prior art, as shown in FIG. 6, division pattern 2h and division pattern 1h
Is formed such that the division pattern 2h and the division pattern 1h overlap each other. For example, the dimensions L ₄ , L ₅ , L ₆ , L ₇ , L ₈ , L ₉ , and L ₁₀ shown in FIG. 6 are, for example, about 0.5 to 5 μm, and particularly preferably 3 μm.
It is about m. Also, the dimension L ₂ is 1/2 the dimension L ₁ .
And the division pattern 2h and the division pattern 1h are formed so that the dimension L ₃ is 1/2 of the dimension L ₁₁ . The division pattern formed in the region 2e (see FIG. 2) and the division pattern formed in the region 1f (see FIG. 2) are also created by similarly providing overlapping regions.

Next, one embodiment of a method of manufacturing a semiconductor device using the first photomask and the second photomask will be described. First, a thin film formed of a metal film, a semiconductor layer, an insulating film, or the like is formed over a substrate, and a photosensitive resin is applied over the thin film. Next, a projection exposure process is performed using a stepper.

When performing the projection exposure process, the first photomask and the second photomask are used as photomasks for steppers. First, the first photomask and the substrate are each aligned with a stepper. After that, in order to transfer only the division pattern formed on the first photomask to the photosensitive resin, the division pattern and the light shielding zone among the division pattern and the light shielding zone formed on the first photomask are formed. Cover the area other than the area surrounding the divided pattern with a stepper blind shading plate. At this time, the end of the blind shading plate of the stepper is aligned with the setting position of the shading band of the first photomask. Furthermore, after moving the XY moving stage of the stepper to move the substrate to a desired position,
The shutter of the stepper is opened and exposure is performed, and the division pattern formed on the first photomask is transferred to the photosensitive resin. Subsequently, the division pattern formed on the second photomask is transferred to the photosensitive resin in the same manner as the division pattern formed on the first photomask, and one photosensitive pattern is formed on the photosensitive resin. Is transferred to the resin having.

Finally, the photosensitive resin is developed, a photosensitive resin image having a shape corresponding to the shape of the one photosensitive pattern is formed on the thin film, and the thin film is subjected to etching treatment, The photosensitive resin image is stripped. Further, by repeating the above-described processing, a plurality of thin films having a desired shape are sequentially formed on the substrate to obtain a semiconductor device.

In this embodiment, the division pattern of the first photomask and the second division pattern adjacent to the division pattern are formed.
At the boundary with the division pattern of the photomask of
The two division patterns are formed on the first photomask or the second photomask so that respective portions of the two division patterns are complemented with each other. Therefore, as shown in FIG. 8 and FIG. 9, in the thin film 8b on the left side of the boundary line 6c, the regions 3a (see FIG. 3) of the two thin films 8b most adjacent to the boundary line 6c and the boundary line The portion of the region 3a (see FIG. 3) of the two thin films 8b closest to the boundary line 6c in the thin film 8b on the right side of 6c is projected and exposed using the same photomask, that is, the first photomask. To be done. As a result, the regions 3a of the four thin films 8b on the left and right sides of the boundary line 6c are formed.
The amount of misalignment between the portion (see FIG. 3) and the thin film 8a is equal. Similarly, the amount of misalignment between the regions 3b (see FIG. 3) of the four thin films 8b on the left and right sides of the boundary line 6c and the thin film 8a is also equal.

That is, the overlapping length L ₁₆ and the overlapping length L ₁₈ , the overlapping length L ₁₇ and the overlapping length L ₁₉ , and the overlapping length L shown in FIG.
₁₂ and overlapping length L ₁₄ , overlapping length L ₁₃ and overlapping length L ₁₅ , overlapping length L ₂₀ and overlapping length L ₂₂ , overlapping length L ₂₁ and overlapping length L ₂₃
And are equal. Here, the overlapping length L ₁₂ and the overlapping length L ₁₄ are α ₁ , and the overlapping length L ₁₆ and the overlapping length L ₁₈ are β.
₁ , overlap length L ₁₃ and overlap length L ₁₅ are α ₂ , overlap length L
₁₇ and overlapping length L ₁₉ β ₂ , overlapping length L ₂₀ and overlapping length L
₂₂ and W, and overlapping length L ₂₁ and overlapping length L ₂₃ 2 W
And respectively. Also, the overlapping area S ₁ and the overlapping area S _1
2 becomes equal, and the overlapping area S ₃ becomes equal to the overlapping area S ₄ . Here, when the overlapping area is expressed using the overlapping length, the overlapping area S ₁ and the overlapping area S ₂ are W (α
₁ + β ₁ ), and the overlapping area S ₃ and the overlapping area S ₄ can be expressed as W (α ₂ + β ₂ ).

On the other hand, the overlapping area S ₅ and the overlapping area S
_{If 7} is represented by the overlap length, the overlap area S ₅ is 2W.
α ₁ and the overlapping area S ₇ can be expressed as 2Wα ₂ . When the overlapping area S ₆ and the overlapping area S ₈ are represented by the overlapping length, the overlapping area S ₆ is 2Wβ ₁ and the overlapping area S ₈ is 2.
It can be expressed as Wβ ₂ .

Therefore, the difference between the overlapping areas S ₁ and S ₂ and the overlapping area S ₅ (S ₁ −S ₅ = S ₂ −S ₅ ) is W (α
₁₋ β ₁ ), the difference between the overlapping areas S ₁ and S ₂ and the overlapping area S ₆ (S ₁ −S ₆ = S ₂ −S ₆ ) can be expressed as W (α ₁ −β ₁ ). Similarly, the difference between the overlapping areas S ₃ and S ₄ and the overlapping area S ₇ (S ₇ −S ₃ = S ₇ −S ₄ ) is W (α ₂ −β
_2), the difference between the area S ₈ overlaps with the area S _3, S ₄ overlap _{(S 8 -S 3 = S 8} -S 4) may represent a W (α ₂ -β _2).

On the other hand, in the conventional photomask, the two divided patterns are not formed so as to complement each other as in the present embodiment. For example, in the thin film 13e shown in FIG. 16, the thin film 13e on the left side of the boundary line 16 is formed by using the first photomask, and the thin film 13e on the right side of the boundary line 16 is the second thin film 13e.
It is formed using the photomask of. Here, assuming that the displacement of the arrangement of the first photomask and the second photomask with respect to the thin film 13d that occurs during the projection exposure process is the same as that in the present embodiment, it is shown in FIG. Similar to the overlap length, the overlap length shown in FIG.
_When expressed using ₁ , α ₂ , β ₁ , β ₂ or W, the overlapping length L ₆₀ is α ₁ , the overlapping length L ₆₁ is α ₂ , and the overlapping length L ₆₃ is β.
₁ , the overlapping length L ₆₄ can be represented by β ₂ , the overlapping length L ₅₉ can be represented by 2 W, and the overlapping length L ₆₂ can be represented by 2 W. Furthermore, the overlapping area S ₁₁ is 2
Wα ₁ , the overlapping area S ₁₂ can be represented as 2Wβ ₁ , the overlapping area S ₁₃ can be represented as 2Wα ₂ , and the overlapping area S ₁₄ can be represented as 2Wβ ₂ . Therefore, the difference (S ₁₁ −S ₁₂ ) between the overlapping area S ₁₁ and the overlapping area S ₁₂ is 2 W (α ₁ −β ₁ ), and the overlapping area S
The difference (S ₁₃ −S ₁₄ ) between ₁₃ and the overlapping area S ₁₄ is 2 W (α ₂
It can be expressed as −β ₂ ).

In other words, when the thin film is formed by using the photomask of the present embodiment, the difference in the overlapping area generated when the thin film is formed by using the conventional photomask is large. The magnitude of the difference in the overlapping area that occurs is 1 /
It becomes 2. The overlapping area is the parasitic capacitance (C _gd ) 19h and the parasitic capacitance (C _gs ) 19g shown in FIG.
Therefore, by reducing the difference in the overlapping area, it is possible to reduce the difference in luminance generated on the display screen of the liquid crystal display device.

By forming a semiconductor device using the photomask of this embodiment mode, the difference in overlapping area can be reduced to 1/2, and the left and right portions where the division pattern to be used changes, that is, the boundary portion. The difference in electrical characteristics between the TFTs is alleviated, and the occurrence of display defects is eliminated. Also, with regard to the superposition accuracy management of the division patterns, the same management method as the conventional one could be reduced to half of the conventional one, so that the management method and the frequency were simplified. Note that, in this specification, for the purpose of simplifying the explanation, the overlay deviation amount shown in FIG. 8 and FIG. 9 is shown to be large with respect to each dimension of the division pattern, but it is actually smaller than the shown ratio. By forming the divided pattern on the photomask by further dividing, the electric characteristics of the element such as TFT are not seriously adversely affected.

Second Embodiment In the first embodiment described above, the case where one photosensitive pattern is divided into two left and right to form two divided patterns, which are respectively formed on two photomasks, is described. The number of divisions may be two or more, in which case the number of photomasks may be one or two or more. For example, divide a photosensitive pattern into three vertically
One divided pattern may be formed on each of the three photomasks. In this case, the three division patterns are formed such that the left division pattern and the center division pattern are complementary to each other and the right division pattern and the center division pattern are complementary to each other. When the projection exposure process is performed using the three divided patterns, one exposure pattern is transferred to the photosensitive resin by performing the exposure three times. In addition, in the first embodiment, each division pattern is divided into two lines along the boundary line of the two division patterns, that is, the division patterns of a total of four lines on the left and right sides of the boundary line are complemented by each other's photomask. Although formed, the complemented portion may be widened or conversely narrowed.

Furthermore, in the first embodiment, the portion of the division pattern relating to one TFT is equally divided into two vertically (divided into the region 3a and the region 3b shown in FIG. 3). For the purpose of adjusting, etc., the complementary portions may be non-uniformly divided into two, or the number of divisions may be two or more. Further, in the first embodiment, only the misalignment in the horizontal direction of the paper surface is described for simplification of description, but naturally, the same can be applied to the vertical direction of the paper surface. Further, the direction can be freely set and is not limited even if it is not a rectangular coordinate system in the horizontal direction and the vertical direction.

Further, in the first embodiment, as shown in FIG. 2, of the division pattern formed on the first photomask, the portion of the division pattern of the area 1e shown in FIG. Of the division pattern formed on the light shielding band 2a formed on the second photomask in the area 2f and further formed on the second photomask, the portion of the division pattern of the area 2e shown in FIG. Although it is formed in the region 2f of the light-shielding band 1a formed on the first photomask, it is not limited to this as long as two divided patterns are formed so as to complement each other.

In the first embodiment, the case where the projection exposure process is performed using the stepper exposure apparatus has been described, but the same can be applied to the case where the mirror projection exposure apparatus is used. Further, in the first embodiment, the manufacturing process of the TFT included in the liquid crystal display device has been described, but even when it is applied to other elements,
The effect of alleviating the characteristic change between the elements patterned by using different division patterns is similar, and other than the TFT, for example, a polysilicon TFT, an MIM (metallins).
ulator metal) type liquid crystal display device,
Image sensor or LSI (large scale)
integrated circuit), IC (i
CCD or integrated circuit)
(Charge coupled device) and the like. Further, in the first embodiment, an example in which a positive resist is used as the photosensitive resin has been described, but it can be applied to the case where another photosensitive resin such as a negative resist is used.

In the above-described first and second embodiments, the photomask has a thickness of 3 to 6 because it has little thermal expansion.
It is preferable to use a quartz substrate having a size of about mm, and when a positive resist is used as the photosensitive resin, for example, a novolac resin is preferably used. As an apparatus used for applying the photosensitive resin, it is preferable to use a spinner for applying the photosensitive resin by utilizing spin rotation. Before applying the photosensitive resin, it is preferable to wash the surface of the photomask in advance (hereinafter, simply referred to as “cleaning step”). The cleaning step and the application of the photosensitive resin are applied. In some cases, an apparatus capable of continuously performing the steps is used, and in such a case, it is preferable to use a scrubber coater or a scrubber coater developer. Further, the condition for applying the photosensitive resin is that the film thickness of the photosensitive resin is 1.0 to
The thickness is preferably about 2.0 μm, and further 1.5 to
Most preferably, it is about 1.6 μm. When a photosensitive resin is applied using the spinner, the spinner preferably has a rotation speed of about 600 to 2000 rpm (rotation speed / minute), more preferably 1000 rpm.
Most preferably, it is a degree. When transferring the divided pattern to the resin having photosensitivity, the exposure condition is preferably ²⁰ to 50 mJ / cm ² in terms of energy amount. The energy amount is equal to the product of the light amount (mW / cm ² ) of light generally used for exposure and the time (seconds) for opening the shutter of the stepper. Further, as a method of forming a divided pattern on the surface of the photomask, a metal film made of chromium or the like is formed on the surface of the base material of the photomask such as the quartz substrate, and on the surface of the metal film, A photosensitive resin for forming the divided pattern is applied, and the photosensitive resin for forming the divided pattern is exposed by using an EB (electron beam drawing device) or a laser drawing device, It is preferable that a divided pattern having a desired shape is formed on the surface of the photomask by etching the metal film and further removing the photosensitive resin on the surface of the metal film.

[0059]

As described above, according to the present invention, the TFT
A photosensitive pattern for forming elements such as is divided and formed on a photomask, which is spliced together during projection exposure processing.
When the photosensitive patterns are combined into one photosensitive pattern, a part of the divided pattern obtained by dividing the photosensitive pattern is used as a single TFT by a part of the divided pattern adjacent to the divided pattern.
Since the divided pattern is formed on the photomask so as to complement the divided element pattern, it is possible to reduce the difference in the overlay deviation amount between the adjacent divided patterns on the left and right sides of the boundary portion. This has the effect of mitigating changes and the adverse effects thereof. Further, even when the conventional projection exposure process is performed in accordance with the same allowable value of the overlay deviation amount and the same allowable value of the overlay deviation amount, the method of managing the overlay deviation amount can be further simplified. The effect that the frequency of managing the overlay deviation amount can be reduced can be obtained. Further, also in the design of the element, it is not necessary to change the structure of the element in particular in order to prevent the difference in the electrical characteristics between the elements formed by using the different division patterns. As shown in, even when the division pattern is formed so as to complement each other at the boundary portion, it is only necessary to create the division pattern in the photomask so that the element having the same structure as the conventional element can be formed. This has the effect of giving flexibility to the design of the device.

In the method for manufacturing a semiconductor device of the present invention, (a) a thin film is formed on a substrate, then a film made of a photosensitive resin is formed on the thin film, and (b) a desired photosensitive pattern is formed. Through the exposed photomask, a projection exposure process is performed to transfer the photosensitive pattern to the resin film, and (c) the transferred photosensitive pattern is developed to form a photosensitive resin image,
(D) A method for manufacturing a semiconductor device in which the thin film is etched by using the photosensitive resin image as an etching mask and then the thin film is peeled off to pattern the thin film into a shape corresponding to the shape of the photosensitive resin image. In addition, projection exposure processing is performed through at least one photomask on which at least one of a plurality of divided patterns formed by dividing the photosensitive pattern is formed, and the plurality of divided patterns are sequentially and selectively selected by the resin. Transferred to a film consisting of
When a photosensitive resin image is formed on the surface of the thin film, one of the plurality of division patterns and the division pattern
At least one of the plurality of division patterns is formed such that a part of each of the one division pattern and the other division pattern is complementary to each other at a boundary portion between the one division pattern and another division pattern.
Since one photomask is used, difference in electrical characteristics between semiconductor devices formed using different division patterns can be reduced or prevented.

Since the desired photosensitive pattern is formed by two divided patterns, it is possible to mitigate or prevent a difference in electrical characteristics between semiconductor devices formed by using different divided patterns.

Since the desired photosensitive pattern is formed by at least three divided patterns, it is possible to alleviate or prevent a difference in electrical characteristics between semiconductor devices formed by using different divided patterns.

A part of the division pattern transferred to the resin film by projection exposure processing using the one division pattern is subjected to projection exposure processing using the other division pattern to form a resin film. Since the one division pattern and the other division pattern are formed so as to overlap a part of the transferred division pattern, it is possible to prevent unnecessary resist from remaining on the thin film after the projection exposure process. .

A part of the division pattern transferred onto the film made of resin by projection exposure processing using the one division pattern is subjected to projection exposure processing using the other division pattern and made a film made of the resin. Since the width that overlaps a part of the transferred divided pattern is 0.5 to 5 μm, it is possible to prevent unnecessary resist from remaining on the thin film after the projection exposure process.

The photomask of the present invention is the photomask used in the method for manufacturing a semiconductor device according to claim 1,
Division patterns formed by dividing the photosensitive pattern are formed on at least one of the photomasks, and at the boundary portion between one division pattern and another division pattern adjacent to the one division pattern,
One division pattern and a portion of each of the other division patterns are formed so as to be complementary to each other by dividing a pattern of a single TFT element. Therefore, different division patterns are used. It is possible to reduce or prevent a difference in electrical characteristics between the semiconductor devices.

A light-shielding band is formed around the one divided pattern, and a light-shielding band is formed around the other divided pattern. Each of the one divided pattern and the other divided pattern is formed. Part of the one division pattern is formed in a light-shielding band formed around the other division pattern, and a part of the other division pattern is formed in the one division pattern. Since it is formed in the light-shielding band formed around the pattern, it is possible to mitigate or prevent a difference in electrical characteristics between semiconductor devices formed by using different division patterns.

Since the desired photosensitive pattern is formed by two divided patterns, it is possible to alleviate or prevent a difference in electrical characteristics between semiconductor devices formed by using different divided patterns.

Since the desired photosensitive pattern is formed by at least three divided patterns, it is possible to alleviate or prevent a difference in electrical characteristics between semiconductor devices formed by using different divided patterns.

A part of the division pattern transferred to the resin film by projection exposure processing using the one division pattern is subjected to projection exposure processing using the other division pattern to form a resin film. Since the one division pattern and the other division pattern are formed so as to overlap a part of the transferred division pattern, it is possible to prevent unnecessary resist from remaining on the thin film after the projection exposure process. sell.

A part of the division pattern transferred to the film made of the resin by projection exposure processing using the one division pattern is subjected to projection exposure processing using the other division pattern and made a film made of the resin. Since 0.5 to 5 μm overlaps with a part of the transferred divided pattern, it is possible to prevent unnecessary resist from remaining on the thin film after the projection exposure process.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing a pair of photomasks used in a method for manufacturing a semiconductor device of the present invention.

FIG. 2 is a partially enlarged explanatory view of FIG.

FIG. 3 is a partially enlarged explanatory view showing a division pattern of a portion related to one TFT among conventional division patterns.

4 is a partially enlarged explanatory view of FIG. 2. FIG.

5 is a partially enlarged explanatory diagram of FIG. 2. FIG.

6 is an explanatory diagram showing a state in which the division pattern shown in FIG. 4 and the division pattern shown in FIG. 5 are superposed.

FIG. 7 is an explanatory plan view showing a state in which a thin film is patterned using the first photomask and the second photomask shown in FIG.

8 is a partially enlarged explanatory view of FIG. 7. FIG.

9 is a partially enlarged explanatory view of FIG.

FIG. 10 is an explanatory diagram showing an example of a conventional mask.

FIG. 11 is a partially enlarged explanatory view of FIG.

FIG. 12 is a plan explanatory view showing a state where a thin film is patterned using the first photomask and the second photomask shown in FIG.

13 is a partially enlarged explanatory view of FIG.

FIG. 14 is a partially enlarged explanatory view of FIG.

FIG. 15 is a partially enlarged explanatory view of FIG.

FIG. 16 is a partially enlarged explanatory view of FIG. 15.

FIG. 17 is an explanatory diagram showing a schematic configuration of a stepper for forming a resist pattern.

FIG. 18 is a sectional process explanatory view showing a method of patterning a thin film formed on a glass substrate using a conventional stepper.

FIG. 19 is an explanatory diagram showing an equivalent circuit of one pixel of a liquid crystal display device using TFTs.

FIG. 20 is an explanatory diagram showing an example of a stepper photomask and an example of a stepper blind.

[Explanation of symbols]

1 first photomask, 1a light-shielding band, 1b, 1c,
1e, 1f, 1g area, 1d setting position, 2 second photomask, 2a light-shielding band, 2b, 2c, 2e, 2
f, 2g area, 2d set position.

Claims (11)

(57) [Claims] 1. (a) After forming a thin film on a substrate, a film made of a resin having photosensitivity is formed on the thin film,
(B) Through a photomask on which a desired photosensitive pattern is formed, projection exposure processing is performed to transfer the photosensitive pattern to a film made of the resin, and (c) the transferred photosensitive pattern is developed to form a photosensitive resin image. (D) A semiconductor patterning the thin film into a shape corresponding to the shape of the photosensitive resin image by (d) etching the thin film using the photosensitive resin image as an etching mask and then peeling the photosensitive resin image. A method of manufacturing an apparatus, wherein a projection exposure process is performed through a plurality of photomasks each having a plurality of divided patterns formed by dividing the photosensitive pattern, and the plurality of divided patterns are sequentially and selectively selected by the resin. When a photosensitive resin image is formed on the surface of the thin film by transferring to one of the plurality of division patterns, one division pattern and one division pattern are formed. At the boundary with another division pattern adjacent to the turn, a single
The pattern of the TFT element is divided into a part of each of the one division pattern and the other division pattern ,
Preparation of a semiconductor device, which comprises using a plurality of photomasks, wherein the plurality of division patterns are formed so as to be complement each other. 2. The method for manufacturing a semiconductor device according to claim 1, wherein the desired photosensitive pattern is formed by two divided patterns. 3. The desired photosensitive pattern is at least 3
The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is formed by one division pattern. 4. A part of the division pattern transferred to the film made of the resin by projection exposure processing using the one division pattern and made of the resin by projection exposure processing using the other division pattern. The method of manufacturing a semiconductor device according to claim 1, wherein the one division pattern and the other division pattern are formed so as to overlap a part of the division pattern transferred to the film. 5. A portion of the division pattern transferred to the film made of the resin by projection exposure processing using the one division pattern and made of the resin by projection exposure processing using the other division pattern. The method for manufacturing a semiconductor device according to claim 4, wherein a width overlapping with a part of the divided pattern transferred to the film is 0.5 to 5 μm. 6. A photomask used in the method for manufacturing a semiconductor device according to claim 1, wherein a plurality of division patterns formed by dividing the photosensitive pattern are formed on the plurality of photomasks, respectively.
A single TF is provided at the boundary between one division pattern and another division pattern adjacent to the one division pattern.
The pattern of the T element is divided into a part of each of the one division pattern and the other division pattern ,
Photomask characterized by being formed to become as complement to. 7. A light-shielding band is formed around the one divided pattern, and a light-shielding band is formed around the other divided pattern, wherein the one divided pattern and the other divided pattern are formed. A part of the one division pattern is formed in a light-shielding band formed around the other division pattern, and a part of the other division pattern is formed so as to complement each other. The photomask according to claim 6, wherein the photomask is formed on a light-shielding band formed around the divided pattern. 8. The photomask according to claim 6, wherein the desired photosensitive pattern is formed by two divided patterns. 9. The desired photosensitive pattern is at least 3
The photomask according to claim 6, which is formed by one division pattern. 10. A part of the division pattern transferred to the film made of resin by projection exposure processing using the one division pattern and made of the resin by projection exposure processing using the other division pattern. 7. The photomask according to claim 6, wherein the one division pattern and the other division pattern are formed so as to overlap a part of the division pattern transferred to the film. 11. A part of the division pattern transferred to the film made of the resin by projection exposure processing using the one division pattern and made of the resin by projection exposure processing using the other division pattern. The photomask according to claim 10, wherein a part of the divided pattern transferred to the film overlaps by 0.5 to 5 μm.