JP3339231B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JP3339231B2 JP3339231B2 JP610095A JP610095A JP3339231B2 JP 3339231 B2 JP3339231 B2 JP 3339231B2 JP 610095 A JP610095 A JP 610095A JP 610095 A JP610095 A JP 610095A JP 3339231 B2 JP3339231 B2 JP 3339231B2
- Authority
- JP
- Japan
- Prior art keywords
- laminate
- support jig
- cutting
- columnar body
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
【0001】[0001]
【産業上の利用分野】この発明は、pn接合を有する積
層された半導体ウェハを切断して整流体とした半導体装
置の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device in which a laminated semiconductor wafer having a pn junction is cut into a rectifier.
【0002】[0002]
【従来の技術】テレビジョンの画面を表示するための走
査線を制御する電源部は高電圧が必要で、この高電圧を
発生させるために数kVから数十kVの耐圧を有する高
圧ダイオードが必要になる。この高圧ダイオードはpn
接合を形成した半導体ウェハをはんだ層を介して積層
し、その積層したウェハを切断して柱状体となし、その
後切断面が化学処理され、柱状体の両端にリード線が付
けられ、保護膜を被覆して製造される。従来の製造工程
について説明する。図4に支持治具に固定された半導体
ウェハを切断した状態の図を示し、同図(a)は平面
図、同図(b)は断面図を示す。pn接合を有する半導
体ウェハ10は、はんだ層3やアルミニウムとシリコン
の合金層を介して一体に積層され積層体1となり、支持
治具4に積層体1の片方の全面が接着され、ブレードソ
ー(円盤状の鋸)またはワイヤーソー(鋼鉄線の鋸)で
1mm□程度の四角の柱状体2に切断される。その後、
外周部の柱状体2は四角状ではなく一部円形となり形状
不良の不良柱状体22となる。積層体1の内周部の四角
の良品柱状体21とこの不良柱状体22とを支持治具4
から剥がしながら選り分ける選別作業が必要である。2. Description of the Related Art A running system for displaying a television screen.
A power supply unit for controlling the scanning requires a high voltage, and a high voltage diode having a withstand voltage of several kV to several tens kV is required to generate the high voltage. This high voltage diode is pn
Laminated semiconductor wafer with solder layer
And, to such a columnar body by cutting the stacked wafers, the
Rear cut surface is chemically treated, leads attached to both ends of the columnar body is produced by coating the coercive Mamorumaku. A conventional manufacturing process will be described. FIGS. 4A and 4B show a state in which the semiconductor wafer fixed to the support jig is cut, and FIG. 4A is a plan view and FIG. 4B is a sectional view. semiconductor wafer 10 having a pn junction, the solder layer 3 or aluminum and is next laminated body 1 integrally laminated via an alloy layer of silicon, one of the entire surface of the laminate 1 to the support jig 4 are bonded, a blade saw ( It is cut into square pillars 2 of about 1 mm square by a disc-shaped saw) or a wire saw (steel wire saw). afterwards,
The columnar body 2 in the outer peripheral portion is not square but partly circular, and becomes a defective columnar body 22 having a defective shape. A support jig 4 is used to connect the square non-defective columnar body 21 and the defective columnar body 22 at the inner peripheral portion of the laminate 1 to each other.
While peeling off from sort out sorting work is Ru need der.
【0003】[0003]
【発明が解決しようとする課題】この選別作業は顕微鏡
による目視作業であるため、不良柱状体22が良品柱状
体21に混入して次工程に回り、不良柱状体22にまで
各製造工程での処理を施してしまうばかりでなく、最終
検査での再度の不良判定の工程が必要であるという無駄
を生じる。また目視選別作業のため人的労力も多く必要
とし、製造コストを増大させるという不都合を生じる。[Problems that the Invention is to Solve Since this sorting work is visually work with a microscope, defects pillars 22 is mixed into non-columnar body 21 around the next step, <br/> each until the defect pillars 22 In addition to performing the processing in the manufacturing process, there is a waste that a step of determining a defect again in the final inspection is necessary . In addition, a large amount of human labor is required for the visual sorting operation, which causes a disadvantage of increasing the manufacturing cost.
【0004】この発明は、前記の課題を解決し、目視選
別作業を不用にする半導体装置の製造方法を提供するこ
とを目的にする。An object of the present invention is to solve the above-mentioned problems and to provide a method of manufacturing a semiconductor device which eliminates the need for a visual sorting operation.
【0005】[0005]
【課題を解決するための手段】前記の目的を達成するた
めに、pn接合を有する複数個の半導体ウェハがはんだ
層もしくはアルミニウムとシリコンの合金層を介して積
層された積層体に形成された後、方形に切断して得られ
る柱状体とリード線と接合被覆膜とを有する半導体装置
において、積層体の切断後に柱状体形状が良となる内周
部に支持治具を接着し、積層体の切断後に柱状体形状が
不良となる外周部に対応する支持治具の外周部に段差を
設けて積層体を接着しないようにし、支持治具の最外端
と半導体ウェハの最外端とを一致させて積層体を位置合
わせし、積層体を切断すると効果的である。また積層体
の切断後に柱状体形状が良となる内周部と同一の大きさ
の支持治具に積層体を接着させ、積層体を切断するとよ
い。さらに支持治具と接着する積層体の内周部の大きさ
を積層体の直径より1mm〜3mm小さくすると確実に
不良柱状体が選別される。そして、支持治具はガラス製
とするとよい。 SUMMARY OF THE INVENTION In order to achieve the above object, after a plurality of semiconductor wafers having a pn junction are formed in a laminate formed by laminating a solder layer or an alloy layer of aluminum and silicon. In a semiconductor device having a columnar body obtained by cutting into a square, a lead wire, and a bonding coating film, an inner periphery in which the shape of the columnar body becomes good after cutting the laminated body
Attach the support jig to the part, and after cutting the laminate , the columnar body shape
A step is provided on the outer peripheral portion of the supporting jig corresponding to the outer peripheral portion to be defective so that the stacked body is not bonded, and the outermost end of the supporting jig is aligned with the outermost end of the semiconductor wafer, and the stacked body is positioned. It is effective to combine and cut the laminate. Further, the laminate is preferably bonded to a support jig having the same size as the inner peripheral portion having a good columnar shape after cutting the laminate, and the laminate is preferably cut. Further, when the size of the inner peripheral portion of the laminated body to be bonded to the support jig is made smaller by 1 mm to 3 mm than the diameter of the laminated body, the defective columnar body is surely selected. And the support jig is made of glass
It is good to
【0006】[0006]
【作用】積層された半導体ウェハの積層体をその内周部
だけ支持治具と接着させ、碁盤の目の様に切断し、四角
の柱状体にする場合、積層体の外周部は部分的に円弧状
の柱状体となり、形状不良の柱状体となる。この不良柱
状体は支持治具と接着しないため、切断時に支持治具か
ら切り離され、四角の良品柱状体のみ支持治具に接着し
て残ることになり、これを支持治具から切り離すことで
目視に頼らず容易に選別できる。この支持治具に良品柱
状体となる積層体の内周部のみ接着させ、外周部に相当
する支持治具の部分を段差を付けることで、積層体を張
りつけるときの接着材の染みだしを吸収でき、さらに切
断したとき、不良柱状体の支持治具からの切り離しが容
易になる。また柱状体の断面は0.5mm〜1mm程度
であるため、支持治具の積層体と接着する部分の大きさ
は積層体の外周端より1〜3mm小さいと確実に不良柱
状体を良品柱状体から切り離すことができ、選別が容易
にかつ確実にできる。When the laminated body of the laminated semiconductor wafer is adhered to the supporting jig only at the inner periphery thereof and cut like a grid to form a square pillar, the outer periphery of the laminated body is partially formed. It becomes an arc-shaped columnar body, and becomes a columnar body having a poor shape. Since this defective columnar body does not adhere to the support jig, it is separated from the support jig when cutting, and only a square non-defective columnar body remains adhered to the support jig and is visually observed by separating this from the support jig. Can be easily sorted without relying on. By bonding only the inner periphery of the laminate that will be a good columnar body to this support jig and providing a step at the portion of the support jig corresponding to the outer periphery, the exudation of the adhesive material when attaching the laminate is absorbed And when cut, the defective columnar body can be easily separated from the support jig. Further, since the cross section of the columnar body is about 0.5 mm to 1 mm, if the size of the portion of the support jig that is bonded to the laminate is smaller by 1 to 3 mm than the outer peripheral end of the laminate, the defective columnarity can be reliably replaced with a good columnar body. , And can be easily and reliably sorted.
【0007】[0007]
【実施例】図1はこの発明の第1実施例の断面図を示
し、同図(a)は切断前の断面図、同図(b)は切断後
の断面図を示す。切断後の平面図については図4と同じ
なのでここでは省略する。pn接合を有する半導体ウェ
ハ10をはんだ層3を介して積層された積層体1をガラ
ス製の支持治具4に載せ接着材5で接着する。この支持
治具4は積層体1の内周部7で接着し、外周部8は0.
5mmから1mm程度の段差6を支持治具4に形成する
ことで接触しない。またこの段差6は接着材5の逃げ代
ろにもなる。支持治具4の直径を積層体1と合わせるこ
とで積層体1の位置決めができる。つぎにワイヤーソー
で積層体1を碁盤の目のように1mm□程度に切断し柱
状体2にする。切断後付着した切断粉や切断時の加熱防
止用のオイルなどの汚染物質をDMF(ジメチルホルム
アミド)の有機溶剤で除去し、積層体1を洗浄する。ま
た積層体1の外周端は円形をしているため、積層体1の
外周部で切断された柱状体2の断面形状は完全な四角で
なく一部円形となり、形状不良の不良柱状体22とな
る。この外周部8は支持治具4に接着していないため切
断時および洗浄時に良品柱状体21から切り離され、自
動的に選別される。また支持治具4の接着部となる内周
部7の大きさを積層体1の外周端から1mm〜3mm小
さくすることで不良柱状体22を確実に選別できる。1 is a sectional view of a first embodiment of the present invention. FIG. 1 (a) is a sectional view before cutting, and FIG. 1 (b) is a sectional view after cutting. The plan view after cutting is the same as that in FIG. The laminated body 1 in which the semiconductor wafer 10 having the pn junction is laminated via the solder layer 3 is placed on a glass support jig 4 and bonded with an adhesive 5. The support jig 4 is bonded at the inner peripheral portion 7 of the laminate 1, and the outer peripheral portion 8 has a thickness of 0.1 mm.
By forming a step 6 of about 5 mm to 1 mm on the support jig 4, no contact occurs. The step 6 also serves as a clearance for the adhesive 5. The laminate 1 can be positioned by matching the diameter of the support jig 4 with the laminate 1. Next, the laminated body 1 is cut into a columnar body 2 by cutting the laminated body 1 into a square of about 1 mm square using a wire saw. The contaminants such as cutting powder adhered after cutting and oil for preventing heat during cutting are removed with an organic solvent of DMF (dimethylformamide), and the laminate 1 is washed. Further, since the outer peripheral end of the laminated body 1 is circular, the cross-sectional shape of the columnar body 2 cut at the outer peripheral part of the laminated body 1 is not a perfect square but a partly circular shape, and the defective columnar body 22 having a poor shape is formed. Become. Since the outer peripheral portion 8 is not adhered to the support jig 4, it is separated from the non-defective columnar body 21 at the time of cutting and washing, and is automatically sorted. In addition, by reducing the size of the inner peripheral portion 7 serving as the bonding portion of the support jig 4 by 1 mm to 3 mm from the outer peripheral end of the stacked body 1, the defective columnar body 22 can be reliably sorted out.
【0008】図2はこの発明の第2実施例の断面図を示
す。積層体1の直径より1mm〜3mm小さいガラス製
の円柱の支持治具4に積層体1を接着材5で接着し、切
断する。支持治具4に円柱を用いることで第1実施例と
同様の効果が得られる。 図3はこの発明の第3実施例
の断面図を示す。積層体1と同一直径の支持治具4に積
層体1の外周端より1mm〜3mm小さく、幅0.5m
m程度の幅で1mm程度の溝9を堀る。この溝9は接着
材5の逃げ代ろとなる。この支持治具4の溝9の内側に
接着材5を塗布し積層体1の良品柱状体21のみを含む
部分を接着させる。その後ワイヤーソーで積層体1を切
断し、接着されない不良柱状体22を切り離し、選別す
る。FIG. 2 is a sectional view of a second embodiment of the present invention. The laminated body 1 is bonded to a glass support jig 4 having a diameter of 1 mm to 3 mm smaller than the diameter of the laminated body 1 with an adhesive 5 and cut. By using a column for the support jig 4, the same effect as in the first embodiment can be obtained. FIG. 3 shows a sectional view of a third embodiment of the present invention. A support jig 4 having the same diameter as the laminate 1 is 1 mm to 3 mm smaller than the outer peripheral end of the laminate 1 and has a width of 0.5 m.
Drill a groove 9 of about 1 mm with a width of about m. The groove 9 serves as a clearance for the adhesive 5. The adhesive 5 is applied to the inside of the groove 9 of the support jig 4 and the portion of the laminate 1 including only the non-defective columnar body 21 is adhered. Thereafter, the laminate 1 is cut with a wire saw, and the defective columnar body 22 that is not adhered is separated and sorted.
【0009】[0009]
【発明の効果】pn接合を有する半導体ウェハを積層し
た積層体の切断後に柱状体形状が良となる内周部を支持
治具に接着した後、方形に切断し、支持治具と接着して
いない外周部にある形状不良の柱状体を、切断時に良品
柱状体から切り離し、目視選別することなしに選別でき
る。このため、従来の目視選別であった良品柱状体に不
良柱状体が混在するという不具合を解消でき、混在する
ことによる工程上の種々の無駄を省くことができる。According to the present invention, an inner peripheral portion having a good columnar shape after cutting a laminated body obtained by laminating semiconductor wafers having pn junctions is bonded to a supporting jig, and then cut into a square, and bonded to the supporting jig. The columnar body having a poor shape at the outer peripheral portion can be separated from the non-defective columnar body at the time of cutting, and can be sorted out without visual selection. For this reason, it is possible to eliminate the problem that the defective columnar body is mixed with the nondefective columnar body, which has been conventionally visually selected, and it is possible to eliminate various wastes in the process due to the mixed columnar body.
【図1】この発明の第1実施例の断面図を示し、(a)
は切断前、(b)は切断後の断面図FIG. 1 shows a cross-sectional view of a first embodiment of the present invention, wherein (a)
Is a sectional view before cutting and (b) is a sectional view after cutting.
【図2】この発明の第2実施例の断面図FIG. 2 is a sectional view of a second embodiment of the present invention.
【図3】この発明の第3実施例の断面図FIG. 3 is a sectional view of a third embodiment of the present invention.
【図4】従来の構成図を示し、(a)は平面図、(b)
は断面図4A and 4B show a conventional configuration diagram, wherein FIG. 4A is a plan view and FIG.
Is a sectional view
1 積層体 2 柱状体 21 良品柱状体 22 不良柱状体 3 はんだ層 4 支持治具 5 接着材 6 段差 7 内周部 8 外周部 9 溝 10 半導体ウェハ DESCRIPTION OF SYMBOLS 1 Laminated body 2 Columnar body 21 Non-defective columnar body 22 Defective columnar body 3 Solder layer 4 Support jig 5 Adhesive material 6 Step 7 Inner peripheral part 8 Outer peripheral part 9 Groove 10 Semiconductor wafer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI H01L 29/91 A ──────────────────────────────────────────────────の Continued on front page (51) Int.Cl. 7 Identification code FI H01L 29/91 A
Claims (4)
はんだ層もしくはアルミニウムとシリコンの合金層を介
して積層された積層体に形成された後、方形に切断して
得られる柱状体とリード線と接合被覆膜とを有する半導
体装置において、積層体の切断後に柱状体形状が良とな
る内周部に支持治具を接着し、積層体の切断後に柱状体
形状が不良となる外周部に対応する支持治具の外周部に
段差を設けて積層体を接着しないようにし、支持治具の
最外端と積層体の最外端とを一致させて積層体を位置合
わせし、積層体を切断することを特徴とする半導体装置
の製造方法。1. A columnar body and a lead wire obtained by forming a plurality of semiconductor wafers having a pn junction in a laminated body laminated via a solder layer or an alloy layer of aluminum and silicon and then cutting the same into a square. In the semiconductor device having the semiconductor device and the bonding coating film, the shape of the columnar body is good after cutting the laminate.
Glue a support jig to the inner periphery of the
On the outer periphery of the support jig corresponding to the outer periphery where the shape is defective
Provide a step so that the laminate does not adhere, and
Align the laminate by aligning the outermost edge with the outermost edge of the laminate.
And cutting the stacked body.
はんだ層もしくはアルミニウムとシリコンの合金層を介
して積層された積層体に形成された後、方形に切断して
得られる柱状体とリード線と接合被覆膜とを有する半導
体装置において、積層体の切断後に柱状体形状が良とな
る内周部と同一の大きさの支持治具に積層体を接着さ
せ、積層体を切断することを特徴とする半導体装置の製
造方法。2. A semiconductor device comprising a plurality of semiconductor wafers having a pn junction.
Via a solder layer or an alloy layer of aluminum and silicon
And then cut into squares
Semiconductor having obtained columnar body, lead wire and bonding coating film
In the body device, the columnar shape is good after cutting the laminate.
The inner peripheral portion identical to adhere the laminate to the size of the support jig and the method of manufacturing a semi-conductor device characterized by cutting the laminate that.
さが積層体の直径より1mm〜3mm小さいことを特徴
とする請求項1または2記載の半導体装置の製造方法。3. The method for manufacturing a semiconductor device according to claim 1 , wherein the size of the inner peripheral portion of the laminate bonded to the support jig is smaller by 1 mm to 3 mm than the diameter of the laminate.
する請求項1〜3のいずれか1項に記載の半導体装置の
製造方法。4. A method of using a support jig made of glass.
The method for manufacturing a semiconductor device according to claim 1 .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP610095A JP3339231B2 (en) | 1995-01-19 | 1995-01-19 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP610095A JP3339231B2 (en) | 1995-01-19 | 1995-01-19 | Method for manufacturing semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH08195361A JPH08195361A (en) | 1996-07-30 |
JP3339231B2 true JP3339231B2 (en) | 2002-10-28 |
Family
ID=11629092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP610095A Expired - Fee Related JP3339231B2 (en) | 1995-01-19 | 1995-01-19 | Method for manufacturing semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3339231B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4905934B2 (en) * | 2005-12-27 | 2012-03-28 | サムコ株式会社 | Plasma processing method and plasma apparatus |
JP4743801B2 (en) * | 2009-03-31 | 2011-08-10 | コマツNtc株式会社 | Work cutting method and wire winding width changing device for work cutting |
JP6012945B2 (en) * | 2011-09-26 | 2016-10-25 | キヤノンマシナリー株式会社 | Substrate cutting device |
-
1995
- 1995-01-19 JP JP610095A patent/JP3339231B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH08195361A (en) | 1996-07-30 |
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