JP3258212B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a structure in which a semiconductor element base is pressed into contact with an electrode base via an electrode base.

[0002]

2. Description of the Related Art A semiconductor device called a thyristor such as a silicon controlled rectifier (SCR) is widely used as a high power converter. In particular, a semiconductor device that handles a large capacity employs a pressure contact structure as shown in FIG. 5 in order to reduce thermal distortion with respect to a heat cycle and extend the life.

That is, a semiconductor element substrate 1 such as a central silicon wafer is sandwiched between a cathode electrode substrate 3 and an anode electrode substrate 4 made of Cu via a buffer plate 2 made of molybdenum or tungsten. Is connected to the gate electrode wiring 5.
Heat radiation fins 6 made of ceramic or the like are provided on the left and right in contact with the semiconductor element substrate 1. The semiconductor element base 1, the buffer plate 2, the cathode electrode base 3, and the anode electrode base 4 are loaded from the top and bottom in FIG. It is pressed against the surface of the element substrate 1 and incorporated into a package for use.

In the above-described conventional semiconductor device, the semiconductor element substrate 1 has a large area in order to cope with an increase in power.
Some have a diameter of 60 mm or more. By applying a load between the cathode electrode substrate 3 and the anode electrode substrate 4 from the outside, both surfaces of the semiconductor element substrate 1 are pressed against each other to improve heat radiation characteristics.

However, in the conventional semiconductor device configured as described above, a mechanism for applying a load such as a spring 7 or a bolt 8 is separately provided for pressing the semiconductor element substrate 1 from both sides, as shown in FIG. I need.

In particular, when controlling a large current, parallel connection must be adopted in terms of the circuit configuration. Therefore, as shown in FIG. 6, a plurality (three in FIG. 6) of semiconductor devices (thyristors) A Are stacked (stacked), a pressing plate 10 and an insulator 11 are vertically passed through four support shafts 9, and a cooling fin 12 is interposed therebetween to press-contact each other.

[0007] The addition of these load applying mechanisms is not suitable for miniaturization, and also has the drawback that the work involved in assembling the semiconductor device becomes complicated because the device becomes large-scale. Further, in this case, when the pressure contact stress applied to each of the plurality of semiconductor element substrates 1 arranged in parallel is biased, the contact electric resistance and the contact thermal resistance become non-uniform and adversely affect the circuit characteristics. It is necessary to generate a uniform pressure contact stress on the base 1, but it was not easy to generate a uniform pressure contact stress with a simple configuration.

[0008]

The problem of the above-described high-power press-contact type semiconductor device is that it has a complicated structure which is unsuitable for miniaturization, and the assembly work is complicated and the number of manufacturing steps is increased. In addition, the present invention has been made in view of such a situation that the pressure contact stress generated when the plurality of semiconductor element substrates 1 are pressed is likely to be non-uniform.

Accordingly, it is an object of the present invention to provide a high-power press-contact type semiconductor device which realizes a press-contact force generating mechanism with a simpler structure, is small in size, and is easy to manufacture. Another object of the present invention is to improve the uniformity of the contact electric resistance and the contact thermal resistance by adopting a structure which can easily cope with the case where a plurality of semiconductor element bases 1 are simultaneously pressed.

[0010]

SUMMARY OF THE INVENTION The present invention relates to a semiconductor device having a structure in which a semiconductor element substrate is pressed into contact with an electrode substrate via a plurality of semiconductor substrates arranged in parallel and a plurality of the semiconductor element substrates. And a resin member formed so as to surround the plurality of electrode substrates and to be interposed between the plurality of semiconductor substrates.

According to the present invention, in a semiconductor device having a structure in which a semiconductor element substrate is pressed into contact with an electrode substrate, a plurality of semiconductor substrates arranged in parallel and a plurality of electrode substrates corresponding to the plurality of semiconductor element substrates are provided. And a resin member formed so as to be interposed between the plurality of semiconductor bases, so that a load-generating mechanism such as a spring or a bolt is not required due to the curing shrinkage force or the heat shrinkage force of the resin member. Since the load generating mechanism is made of only resin,
It is easy to manufacture, and in addition, in the semiconductor device manufacturing process, a pressing load is already generated due to the curing shrinkage force and heat shrinkage force of the resin part, so there is no need to add a new load when assembling the semiconductor device Becomes Furthermore, even when a plurality of semiconductor substrates are arranged and pressed against each other, the resin covering the semiconductor element substrates can be deformed independently for each semiconductor element substrate, so that the uniformity of the compressive stress can be improved. Can be kept.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a semiconductor device according to the present invention will be described below in detail with reference to the drawings.

FIG. 1A is a sectional view showing a first embodiment of a semiconductor device according to the present invention, and FIG. 1B is a top view. That is, the semiconductor element substrate 1 such as a silicon wafer is
After being sandwiched between the cathode electrode substrate 3 and the anode electrode substrate 4 via the buffer plate 2 made of molybdenum or tungsten, the entire external resin layer is formed with the cathode electrode substrate 3 and the anode electrode substrate 4 partially exposed. The resin member 13 is surrounded by the formed resin member 13 and is cured at a high temperature. The resin member 13 has a curing shrinkage of about 0.2
%, A linear expansion coefficient of at least about 16 × 10 ⁻⁶ / ° C. at room temperature and about 60 × 10 ⁻⁶ / ° C. at a high temperature equal to or higher than the glass transition temperature. As described above, the resin member 7 has a high curing shrinkage rate and a high linear expansion rate.
Since it is made of a material having high rigidity at normal temperature, a strong pressure stress acts on the semiconductor element substrate 1 after the resin curing step at the time of manufacturing is completed.

A barrier ring 14 is provided between the cathode electrode base 3 and the anode electrode base 4 to prevent the resin from flowing inside during the molding of the resin. The barrier ring 14 is made of a material having low rigidity and non-conductivity.
Also, the cathode electrode substrate 3
, The gate electrode wiring 5 is drawn out.

As described above, the semiconductor device of the present invention
Cathode electrode base 3 with semiconductor element base 1 sandwiched in the center
In addition, the resin member 13 surrounding the outside of the anode electrode base 4 itself exerts a pressing force from the outside to the inside due to its own curing shrinkage force or heat shrinkage force. No generating mechanism is required.

As described above, the semiconductor device of the present invention realizes the press-contact mechanism with a simple configuration in which the semiconductor element base 1 is simply surrounded by the resin member 13 without using a particularly complicated mechanism. In addition, in the semiconductor device manufacturing process of sealing with the resin member 13, since a press-contact load has already been generated, there is an advantage that an operation of separately applying a load when the semiconductor device is incorporated is not required.

FIG. 2A is a sectional view showing a second embodiment according to the present invention, and FIG. 2B is a top view thereof. That is, it is composed of a semiconductor element substrate 1, a buffer plate 2, a cathode electrode substrate 3, an anode electrode substrate 4, a gate electrode wiring 5, a resin member 13, and a barrier ring 14, and each function is the same as that of the first embodiment. It is. However, in this embodiment, unlike the first embodiment, the shape of each of the electrode bases 3 and 4 is different from that of the first embodiment in that the center part is removed and the four bases protrude on the same circumference. It is characterized in that the upper and lower portions of the central portion are covered with the resin member 13. As a result, the contraction force of the resin member 13 is more uniformly applied to the surface of the semiconductor element base 1, and the uniformity of the pressure contact stress can be improved.

FIG. 3 is a sectional view showing a third embodiment in which features of the embodiment shown in FIG. 2 are particularly emphasized. In this embodiment, a hole is formed in the center of the semiconductor element substrate 1, the buffer plate 2, the cathode electrode substrate 3, and the anode electrode substrate 4, and a resin member 13 is injected into the space. Eggplant At this time, the semiconductor element substrate 1
A barrier ring 14 is also provided between the resin and the resin member 13 to prevent the resin from flowing inside. As a result of configuring the semiconductor device in this manner, the uniformity of shrinkage of the resin member 13 is further improved, good pressure contact can be obtained, thermal distortion can be reduced, and contact electric resistance can be made uniform.

FIG. 4A is a sectional view showing a fourth embodiment of the present invention, and FIG. 4B is a top view thereof. A plurality of semiconductor element bases 1a and 1b are arranged in parallel as shown in the drawing, and correspondingly, buffer plates 2a and 2b, cathode electrode bases 3a and 3b, and barrier ring 14 are respectively arranged, and an anode electrode base is provided. 4 and gate electrode wiring 5,
The resin member 13 is configured to be common to the semiconductor element bases 1a and 1b. Each function is the same as that of the first and second embodiments.

In other words, the resin member 13 is characterized in that the two semiconductor element substrates 1a and 1b are commonly pressed against each other. The resin member 13 which is the external resin layer is
Since a recess is formed between the two semiconductor element bases 1a and 1b, the semiconductor element bases 1a and 1b are formed with a smaller gap than other portions. As a result, the resin can be independently deformed for each of the semiconductor element bases 1a and 1b, and the uniformity of the compressive stress can be kept good.

In each of the above-described embodiments, the addition of cooling fins for heat dissipation can be easily realized by incorporating fins that contact the electrode bases 3 and 4 of the cathode and the anode.

As described above, according to the present invention, even when a plurality of semiconductor element substrates are pressed against each other, it is possible to realize a simple configuration without requiring a particularly complicated configuration. The present invention can be implemented by appropriately modifying not only the above-described embodiments but also within the scope of the gist.

[0023]

According to the semiconductor device of the present invention, the pressure-generating function of a high-power, large-capacity pressure-contact type semiconductor device is realized with a simple structure. And the uniformity of the contact electric resistance and the contact thermal resistance can be improved.

[Brief description of the drawings]

FIG. 1 is a configuration diagram showing a first embodiment of a semiconductor device of the present invention.

FIG. 2 is a configuration diagram showing a second embodiment of the semiconductor device of the present invention.

FIG. 3 is a configuration diagram showing a third embodiment of the semiconductor device of the present invention.

FIG. 4 is a configuration diagram showing a fourth embodiment of the semiconductor device of the present invention.

FIG. 5 is a configuration diagram showing a conventional semiconductor device.

FIG. 6 is a front view showing a state in which three semiconductor devices shown in FIG. 5 are assembled and a load is applied.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1, 1a, 1b Semiconductor element base 2, 2a, 2b Buffer plate 3, 3a, 3b Cathode electrode base 4 Anode electrode base 5 Gate electrode wiring 13 Resin member 14 Barrier ring

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/52 H01L 29/74 H01L 23/28

Claims (2)

(57) [Claims] In a semiconductor device having a structure in which a semiconductor element substrate is pressed into contact with an electrode substrate, a plurality of semiconductor substrates arranged in parallel and a plurality of electrode substrates corresponding to the plurality of semiconductor element substrates are surrounded. And a resin member formed so as to be interposed between the plurality of semiconductor substrates. 2. The semiconductor device according to claim 1, wherein said semiconductor substrate and said electrode substrate are pressed against each other by a curing shrinkage force or a heat shrinkage force of said resin member.