JPS6055633A - Semiconductor device - Google Patents

Abstract

PURPOSE:To equalize the electric characteristics and the mechanical characteristics of the titled devices such as transistors and GTO's having fine electrode patterns by a method wherein the load of pressure welding is unified by enabling an external electrode to abut against a control electrode plate via Bellville spring, and said spring to abut approx. against the width center of the electrode plate. CONSTITUTION:When the force of pressure welding is applied across the external electrodes 105 and 106, flanges 102-104 deflect, each member abutting against with each other, and the load of pressure welding being then applied. At this time, the external electrode 106 directly abuts against intermediate sliding plates 301 and 302 abutting against a cathode electrode 204, whereas the Bellville spring 304 is inserted to a gate electrode plate 303; therefore a gate electrode film 205-gate electrode 303-gate terminal plate 307 are put in contact with one another under a uniform load over the entire surface of annular form. Besides, the point of abutment of a gate terminal plate 307 via washers 305 of the spring 304 and via insulationg plate 306 against the plate 303 is put about at the width centers thereof; thereby the load of pressure welding is equalized also in the direction of width.

Description

[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a semiconductor device 1k in which a fine electrode pattern such as a transistor, a gate turn-off thyristor, etc. It is something that

[Background of the invention]

Transistors (hereinafter referred to as TS and abbreviated as +i+F, )- and game turn-off thyristors (hereinafter referred to as 1' 0 and abbreviated as i)
11: ) 'r&:l',.

The emitter in the semiconductor substrate is formed into a minute
The emitter layer is divided into T-shaped parts, and an emitter electrode film and a cathode electrode are provided on each emitter layer, and a base electrode film and a gate electrode film are provided on the adjacent base layer so as to surround each emitter layer. The withdrawal speed is accelerated to ensure high-speed operation.

When TBS and GTO have a large capacity, external electrodes are pressed into contact with the emitter electrode film and cathode electrode film via an intermediate sliding plate, and base leads and gate leads are also pressed into contact with the base electrode film and gate electrode film. This prevents the semiconductor plug from being destroyed or from deteriorating its characteristics due to differences in thermal expansion coefficients between the members, and also simplifies the electrode structure.

In this case, part of the pressure force applied to the external electrode is divided into the base lead, gate lead, etc., but if the pressure force applied to the semiconductor substrate is uniform and the electrical resistance at the pressure contact part is uniform, The electrical and mechanical properties of TBS and GTO become uniform, especially as the capacity increases, the base lead,
If the pressure contact portion of the gate lead is biased against each emitter layer, the internal resistance of the base electrode film and gate electrode film cannot be ignored, and the characteristic of operation tends to deteriorate.

[Purpose of the invention]

Therefore, an object of the present invention is to provide a semiconductor device 1u with uniform pressure contact load and good electrical and mechanical properties.

[Summary of the invention]

The present invention is characterized in that a plurality of strip-shaped emitters L- are arranged concentrically in groups, and an annular intermediate sliding plate is arranged concentrically in the outermost layer of each group. are in contact with each other, and are arranged concentrically with the 6 annular intermediate sliding plates, and the control 1 electrode plate is in contact with the inter-city tram sliding plates 1 through 1, and each annular intermediate f 1 Ilb is tentatively directly connected to the control room. &Temporarily, the external electrode comes into contact with the disc spring, and the disc spring is controlled! The reason is that it is in contact with the center of the width of the electrode plate.

[Embodiments of the invention]

Hereinafter, the present invention will be explained using a GTO as an example, together with embodiments shown in the drawings.

In FIG. 1, 10o is an airtight container, which includes a pair of external electrodes 105 and 106 that are flexible and airtightly provided at both openings of a ceramic cylinder 101 via flanges 102 to 104. It consists of

A semiconductor element 200 is arranged between the external electrodes 105 and 106.

The semiconductor element 200 is made by integrating a semiconductor (silicon) substrate 201 and a tungsten or molybdenum support 202 with a brazing material 203, as shown enlarged in FIGS. 2(a) and 2(b). Of course, only the silicon substrate 201 may be used.

The silicon substrate 201 has a pair of main surfaces having four semiconductor layers Np, Nb having sequentially different conductivity types.

Pv, and the Nr+ layer is divided into strips and arranged radially. Further, each radial Nw layer is divided into two groups, one on the center side and the other on the peripheral side of the silicon substrate 201. An aluminum cathode electrode film 204 is in low resistance contact with each Nw layer, and an aluminum gate electrode film 205 is in low resistance contact with the PB layer so as to surround each Nv layer.

In FIG. 2(a), the electrode films 204 and 205 of the horn sword and gate, as well as the oxide film on the optical surface, are omitted for 144 simplicity.

The semiconductor element 20 () has an external electrode 105 and a support plate 202.
It is positioned by a Teflon gas and an id 206 held in between, and the end surface is treated with silicone rubber varnish 207.

A tungsten annular intermediate slide 41y: S (
11.

302 is in contact. Rlt moving plate between both 301°3
02 is arranged concentrically, and the molybdenum ring gate 1 between the two provinces! The electrode plates 303 are also arranged concentrically.

The external electrode 106 is in direct contact with the intermediate sliding plates 301 and 302, and the external electrode 106 is in contact with the gate and other plates 303 via a disc spring 304.

The gate electrode plate 303 is in contact with the gate electrode film at p m Jim between each Nt layer on the center side JJ'P and each Nw layer on the peripheral side group.

FIG. 3 is an enlarged view of section A surrounded by the dashed line in FIG.

As shown in FIG. 4, the external electrode 106 has an annular groove 10.
6a is provided, and the disc spring 304 is inserted into this groove 106a.
is housed in. A washer 305 is attached to the disc spring 304, and a mica insulating plate 30 is placed between it and the gate electrode plate 303.
6. A copper gate terminal plate 307 is provided. The portions of the gate electrode plate 303 other than the contact surface with the gate electrode film 205 and the contact surface with the gate terminal plate 307 are coated with Teflon 308 to prevent contact with the intermediate sliding plates 301 and 302. The gate terminal plate 307 is connected to the groove 10 of the external electrode 106.
Since it is housed in the internal electrode 6a, it is covered with Citeflon 309 to avoid contact with the external electrode 106. As shown in FIG. 5, the gate terminal plate 307 consists of an annular contact portion 307a and a connecting portion 307b.
b is accommodated in the radial groove 106b of the external electrode 106. One end of a deformable connector 310 is fixed to the connecting portion 307b, and the other end is fixed to the gate pipe 107 provided through the ceramic tube 101.

Game dopa・fpu1()7 to IU #;t, part 307
An insulating heat-shrinkable mesh 1 is provided over b.

When pressure contact force is applied between the external electrodes 105 and 106,
The flanges 102 to 104 are bent, and each member is in contact with each other.
~, press-contact bending is added. At this time, since the disc spring 304 is used, the gate electrode film 205 - the gate electrode plate 3o
Between 3 and the gate terminal plate 307 is a uniform load 11 on the entire annular surface.
and contact each other. If there is uneven contact in some parts and there is a part that cannot be touched, the gate terminal board 307
Since the electrical resistance between the gate electrode film 205 becomes high and the gate current does not flow sufficiently, causing malfunctions in turn-on and turn-off, the present invention uses a disc spring, so that such a problem is prevented in the circumferential direction. There are no malfunctions and the characteristics are uniform.

In addition, the gate terminal plate through the washer 305 and insulating plate 306 of the disc spring 3 () 4: (07, Gemachi 1, electrode plate 303, J concubine 1 fixed place, those 1 lll, l jl smell By applying this to the same area, the pressure contact load is made uniform in the width direction as well.

As shown in FIG. 3, if a part of the gate electrode plate 303 is also housed in the groove 106a of the external electrode 106, the intermediate sliding plates 301 and 302 can be aligned.
Manufacturing work is also easier.

Since the load applied to the gate electrode film 205 is uniform, there is no deterioration in characteristics due to load concentration, but the semiconductor element is not destroyed, and has good electrical and mechanical characteristics.

Even if the semiconductor element 200 is bent due to brazing the silicon substrate 201 and the support plate 202, the gate electrode film 20
If a hard material such as molybdenum or tungsten is used as the gate electrode plate 303, the gate electrode plate 303 will be made of a soft material such as aluminum.
Dig into 5.

In this case, if the disc spring applies a pressure load to the center of the width of the gate electrode plate 303, the gate electrode film 205
There is little contact between the gate electrode plate 3030 and good contact.

The present invention is not limited to the above-described embodiments, but can also be implemented in other forms.

(1) The emitter layer is divided into multiple concentric group VCs and
and between each group there is a control φ (one electrode plate is placed a).

For example, the emitter layer is arranged in a 4H1 radial concentric manner, and the second
A control L11 electrode is placed between the group and the third group, and the first
# and #211Ti, intermediate sliding plates are in contact with the emitter layers of the third and fourth groups, respectively.

(2) The base layer is not etched down and is on the same plane as the emitter layer.

(3) The pn junction between the emitter layer and the base layer has a solena structure.

(4) G in which the anode side emitter layer is exposed on the other main surface together with the adjacent base layer and short-circuited by the anode electrode film.
TO8 (5) Emitters j- are arranged in an arc shape in the circumferential direction.

〔Effect of the invention〕

As explained above, according to the present invention, it is possible to obtain a semiconductor device in which a pressure contact load is applied uniformly and has good electrical and mechanical properties.

[Brief explanation of drawings]

Fig. 1 is a sectional view of a GTO showing one embodiment of the present invention;
The figure shows the semiconductor element of the GTO shown in Figure 1. ,
(a) is a plan view of the silicon substrate, (b) is 1- of (a)
1 is a cross-sectional view along cutting line 1, FIG. 3 is an enlarged view of part A surrounded by the dashed line in FIG. 1, FIG. 4 is a plan view of the external electrode used in ()TO in FIG. Figure 5 shows the GT in Figure 1.
It is a half view of the gate terminal board used in O. ]00...Airtight container, 101...Ceramic tube, 1
02-104... Flange, 105, 106... External electrode, 107... Gate pipe, 201... Silicon base, 204... Cathode electrode film, 205...
Gate electrode film, 301.302... intermediate sliding plate, 30
3...Gate electric +ix&, 304...Disc spring, 30
7...Gate terminal board. Agent Patent Attorney Akio Takahashi (11) 10 Figure 2 C Figure 2/I)) Continuation of Part 3 Figure 1 Page 1 Inventor Sakura 1) 159-3, Saiwai-cho, Hitachi City

Claims (1)

[Claims] 1. The semiconductor substrate has at least three semiconductor layers having different conductivity types between its pair of main surfaces, and a plurality of strip-shaped outermost layers on one main surface. The intermediate layer adjacent to each outermost layer is exposed, and each outermost layer is arranged in a concentric group on one main surface, and one main electrode film is in low resistance contact with each outermost layer. A control electrode film is in low-resistance contact with the adjacent intermediate layer so as to surround each outermost layer, and a concentrically arranged annular main electrode film is in contact with the outermost main electrode film of each group in a concentric arrangement. An annular control electrode plate passes between each annular intermediate sliding plate and abuts the control electrode film between each group of the outermost layer, and an annular control electrode plate is arranged between and concentrically with each of the intermediate sliding plates. One external electrode contacts the sliding plate directly and the annular control electrode plate via a disc spring, and the disc spring contacts the width center j of the annular control electrode plate, and The other external electrode is in low-resistance contact with the main electrode, and both row electrodes are provided airtightly and flexibly in the opening of the insulating cylinder to form an airtight container for storing the semiconductor substrate. In the above item 1, each annular intermediate layer MI is characterized in that it is connected to the inner end of the container of the external electrode 11jU provided through the insulating surface of the control electrode plate opening.
The plate 11 and the annular control 11L electrode plate are insulated by an insulating proboscis provided on the control electrode plate, and the disc spring and the control 11 electrode plate are insulated by an annular insulating plate provided between them. Semiconductor device 11°