JP3257356B2 - Vapor phase growth apparatus, vapor phase growth method, and cleaning method for vapor phase growth apparatus - Google Patents
Vapor phase growth apparatus, vapor phase growth method, and cleaning method for vapor phase growth apparatusInfo
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- JP3257356B2 JP3257356B2 JP18262695A JP18262695A JP3257356B2 JP 3257356 B2 JP3257356 B2 JP 3257356B2 JP 18262695 A JP18262695 A JP 18262695A JP 18262695 A JP18262695 A JP 18262695A JP 3257356 B2 JP3257356 B2 JP 3257356B2
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- gas
- phase growth
- vapor phase
- wafer
- holding plate
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Description
【０００１】[0001]
【産業上の利用分野】本発明は気相成長(CVD) の装置及
び方法，並びに気相成長装置のクリーニング方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus and a device for vapor phase growth (CVD) .
And a cleaning method for a vapor phase growth apparatus .
【０００２】気相化学処理装置の典型例として, 本発明
では化学気相成長法による枚葉式プラズマ装置について
説明する。この例では１度の処理で１枚のウェーハへの
成膜を行うため，複数枚同時処理を行うバッチ式装置で
は得難い面内膜厚の均一性を得ることができる。しか
し，このような枚葉式においても反応室内の僅かな条件
の変化により膜質，膜厚に変動を与える。As a typical example of a chemical vapor processing apparatus, a single-wafer plasma apparatus using a chemical vapor deposition method will be described in the present invention. In this example, since film formation is performed on one wafer in one process, uniformity of the in-plane film thickness, which is difficult to obtain with a batch-type apparatus that simultaneously processes a plurality of wafers, can be obtained. However, even in such a single-wafer method, a slight change in conditions in the reaction chamber changes the film quality and thickness.
【０００３】近年，半導体産業ではウェーハの大口径
化，デバイスの微細化が進み，化学気相成長法で枚葉式
処理を行った際でも，膜質，膜厚の均一性がさらに重要
となっている。In recent years, in the semiconductor industry, the diameter of wafers and the miniaturization of devices have advanced, and even when single-wafer processing is performed by chemical vapor deposition, uniformity of film quality and film thickness has become even more important. I have.
【０００４】[0004]
【従来の技術】従来の枚葉式プラズマ気相成長装置を図
２に示す。図２(A) は装置全体の構成を示す断面図，図
２(B) はガスシャワーヘッドを兼ねる上部電極 2の断面
図，図２(C) はその平面図である。2. Description of the Related Art FIG. 2 shows a conventional single-wafer plasma vapor deposition apparatus. 2A is a cross-sectional view showing the configuration of the entire apparatus, FIG. 2B is a cross-sectional view of the upper electrode 2 also serving as a gas shower head, and FIG. 2C is a plan view thereof.
【０００５】この装置では，１枚のウェーハ 8を反応室
1内に設けられたガスを噴出するガスシャワーヘッドを
兼ねる上部電極 2と下部電極 3との間に置き，反応室 1
を外部からヒータ 6で加熱し，その内部をポンプ 5で排
気しながらガス流量コントロールユニット 7で流量制御
された処理ガスを反応室内に流し込み，さらに電極間に
高周波（ＲＦ）電源 4よりＲＦ電力を印加して処理ガス
のプラズマを発生させて，ウェーハ 8上に成膜が行われ
る。In this apparatus, one wafer 8 is placed in a reaction chamber.
1 is placed between the upper electrode 2 and the lower electrode 3 which also serves as a gas shower head that blows out the gas provided in the reaction chamber.
Is heated by a heater 6 from the outside, and a processing gas whose flow rate is controlled by a gas flow control unit 7 is supplied into the reaction chamber while the inside thereof is evacuated by a pump 5, and RF power is supplied from a high frequency (RF) power supply 4 between the electrodes. A plasma of the processing gas is generated by the application to form a film on the wafer 8.
【０００６】また，プラズマクリーニングは，成膜後反
応室 1からウェーハを取り出し，反応室 1内をプラズマ
でクリーニングして反応室 1内に付着した反応生成物を
除去する。[0006] In the plasma cleaning, a wafer is taken out of the reaction chamber 1 after film formation, and the inside of the reaction chamber 1 is cleaned with plasma to remove reaction products adhered to the reaction chamber 1.
【０００７】[0007]
【発明が解決しようとする課題】高温，減圧状態にある
反応室へ送られるガスは，シャワーヘッドを通し，ウェ
ーハ上で常にその濃度が均一になるようにしてウェーハ
上に供給される。しかしながら，シャワーヘッドの孔は
劣化や目詰まりで常に均一ではなく必ずしもガスは均一
に噴出されているとは限らない。また，プラズマを発生
させる両電極の平行度が多少なりともずれていると，ウ
ェーハ上のプラズマ密度は不均一となる。The gas sent to the reaction chamber in a high-temperature, reduced-pressure state is supplied to the wafer through a shower head so that its concentration is always uniform on the wafer. However, the holes in the shower head are not always uniform due to deterioration or clogging, and the gas is not always ejected uniformly. Also, if the parallelism between the two electrodes for generating the plasma is slightly deviated, the plasma density on the wafer becomes non-uniform.
【０００８】これらの理由により，成膜した被膜の膜質
や膜厚は所望の均一性が得られなくなり，また，クリー
ニング時に反応生成物が残り，パーテイクル発生の原因
となっていた。For these reasons, desired uniformity in the quality and thickness of the formed film cannot be obtained, and a reaction product remains at the time of cleaning, causing particles.
【０００９】本発明は，ウェーハ上のガス濃度とプラズ
マ密度を短時間で均一化し，成膜の際の膜厚分布を均一
にし，且つプラズマクリーニングの際の反応生成物のエ
ッチング残渣を低減することを目的とする。It is an object of the present invention to make the gas concentration and plasma density on a wafer uniform in a short time, to make the film thickness distribution uniform at the time of film formation, and to reduce the etching residue of a reaction product at the time of plasma cleaning. With the goal.
【００１０】[0010]
【課題を解決するための手段】上記課題の解決は， １）反応室内にウェーハを載置する保持板と，該ウェー
ハを挟んで処理ガスの噴出面が該保持板にほぼ平行に置
かれたガスシャワーヘッドと，該保持板を回転する手段
と，該ガスシャワーヘッドを該保持板とは反対方向に回
転する手段とを有する気相成長装置， ２）前記ガスシャワーヘッドを上部電極とし，前記保持
板を下部電極として，両電極の間に印加する高周波電源
を有する前記１）記載の気相成長装置， ３）前記１）または２）記載の気相成長装置を用いて，
前記保持板と前記ガスシャワーヘッドとを互いに反対方
向に回転しながら該ガスシャワーヘッドから処理ガスを
噴出して，前記ウェーハ上の成膜を行う気相成長方法，
あるいは ４）前記２）記載の気相成長装置のクリーニング方法で
あって，前記保持板と前記ガスシャワーヘッドとを互い
に反対方向に回転しながら該ガスシャワーヘッドから処
理ガスを噴出して，反応室内の成膜反応生成物を除去す
る気相成長装置のクリーニング方法により達成される。Means for solving the above problems are as follows: 1) A holding plate on which a wafer is placed in a reaction chamber, and a processing gas ejection surface is placed substantially parallel to the holding plate across the wafer. Gas shower head and means for rotating the holding plate
When the vapor phase growth apparatus having a means for rotating in the opposite direction to the said holding plate the gas shower head, 2) the the gas shower head and the upper electrode, the holding plate as a lower electrode, between the electrodes Using the vapor-phase growth apparatus according to the above 1) having a high-frequency power supply to be applied, 3) using the vapor-phase growth apparatus according to the above 1 ) or 2 ) ,
Place the holding plate and the gas shower head in opposite directions
Process gas from the gas shower head while rotating
A vapor phase growth method of ejecting and forming a film on the wafer,
Or 4) using the cleaning method of the vapor phase growth apparatus described in 2) above.
Then, the holding plate and the gas shower head are mutually
While rotating in the opposite direction from the gas shower head.
Blows out the processing gas to remove the film formation reaction products in the reaction chamber
This is achieved by a method for cleaning a vapor phase epitaxy apparatus .
【００１１】[0011]
【作用】ウェーハ面内で膜厚を均一化するためには, ウ
ェーハ面内でガス濃度及びプラズマ密度を均一にする必
要がある。そのために, 本発明では上部電極兼ガスシャ
ワヘッドとウェーハを載置した下部電極を互いに反対方
向に回転するようにしている。In order to make the film thickness uniform on the wafer surface, it is necessary to make the gas concentration and plasma density uniform on the wafer surface. For this purpose, in the present invention, the upper electrode / gas shower head and the lower electrode on which the wafer is mounted are rotated in opposite directions.
【００１２】図１は本発明の原理説明図である。図にお
いて，１枚のウェーハ 8を反応室 1内に設けられた処理
ガスを噴出するガスシャワーヘッドを兼ねる上部電極 2
と下部電極 3との間に置き，反応室 1を外部からヒータ
6で加熱し，その内部をポンプ 5で排気しながらガス流
量コントロールユニット 7で流量制御された処理ガスを
反応室内に噴出し，さらに電極間にＲＦ電源 4よりＲＦ
電力を印加して処理ガスのプラズマを発生させて，ウェ
ーハ 8上に成膜が行われる。この際，ウェーハ上のガス
濃度及びプラズマ密度を均一化させるために，ガスシャ
ワーヘッドを兼ねる上部電極 2をモータ 9により回転さ
せ，さらにウェーハを載置した下部電極 3をモータ10に
より上部電極 2と反対方向に回転させる。FIG. 1 is a diagram illustrating the principle of the present invention. In the figure, one wafer 8 is placed in a reaction chamber 1 and an upper electrode 2 serving also as a gas shower head for ejecting a processing gas is provided.
And the lower electrode 3, and heat the reaction chamber 1 from outside
The gas is heated by 6, and the inside of the chamber is evacuated by the pump 5, and the processing gas whose flow rate is controlled by the gas flow control unit 7 is blown into the reaction chamber.
The power is applied to generate plasma of the processing gas, and a film is formed on the wafer 8. At this time, in order to equalize the gas concentration and plasma density on the wafer, the upper electrode 2 also serving as a gas shower head is rotated by the motor 9, and the lower electrode 3 on which the wafer is mounted is connected to the upper electrode 2 by the motor 10. Rotate in the opposite direction.
【００１３】このように，下部電極上に置かれたウェー
ハにガスを噴射し，プラズマを発生させながら, 上下両
電極を反対方向に回転させることで，ウェーハに対し同
一濃度のガスと同一密度のプラズマを供給でき，且つウ
ェーハ上の温度分布も均一化できるため，ウェーハ面内
での膜質, 膜厚を均一化できる。As described above, by injecting a gas onto the wafer placed on the lower electrode and rotating the upper and lower electrodes in opposite directions while generating plasma, the gas having the same concentration and the same density as the wafer is produced. Since plasma can be supplied and the temperature distribution on the wafer can be made uniform, the film quality and film thickness within the wafer surface can be made uniform.
【００１４】また, 反応室内のプラズマクリーニングを
行う際にも，同様の理由により反応生成物を残さないよ
うに均一な処理が可能となる。次に, 処理の際に通常行
われるウェーハのみを回転させる場合よりも本発明が優
れている点を説明する。[0014] Further, when performing plasma cleaning in the reaction chamber, uniform processing can be performed so as not to leave reaction products for the same reason. Next, the point that the present invention is superior to the case of rotating only a wafer which is usually performed during processing will be described.
【００１５】それは，ウェーハ上でのガス濃度, プラズ
マ密度を均一化させる時間を短縮できることである。片
方のみを１回転させるのに比べて両方を逆回転させると
同じガス濃度，プラズマ密度を得るのに１／２回転です
む。デバイスの微細化に伴い成長膜の薄膜化が進み，成
長時間が以前に比しかなり短縮されてきており，そのた
め瞬時にウェーハ上のガス濃度, プラズマ密度を均一化
させる必要がある。また，ウェーハを回転させる場合，
減圧状態のチャンバ内では真空チャックが使用できない
ため，高回転数で回転させることはできない。そのた
め，本発明ではもう一方のガス噴出電極を逆回転させる
ことで，ウェーハの回転数の増加を行わなくてもガス濃
度, プラズマ密度の均一化のための時間短縮を可能とし
ている。That is, it is possible to shorten the time for making the gas concentration and plasma density on the wafer uniform. If one of them is rotated by one rotation, the rotation of both is reversed, so that it takes only 1/2 rotation to obtain the same gas concentration and plasma density. The growth time of the growth film has been shortened considerably with the miniaturization of devices and the growth time has been considerably shortened compared to before, so it is necessary to instantaneously equalize the gas concentration and plasma density on the wafer. Also, when rotating the wafer,
Since the vacuum chuck cannot be used in the chamber in a reduced pressure state, it cannot be rotated at a high rotation speed. Therefore, in the present invention, by rotating the other gas ejection electrode in the reverse direction, it is possible to shorten the time for making the gas concentration and the plasma density uniform without increasing the number of rotations of the wafer.
【００１６】[0016]
【実施例】図１の装置を用いて，成膜例及びクリーニン
グ例を説明する。 (1) 成膜の例１ 被膜の種類：プラズマ二酸化シリコン(P-SiO2)膜 処理ガス： SiH4 90 SCCM N2O 500 SCCM N2 4500 SCCM ガス圧力： 4.0 Torr ＲＦ電力： 520 W 基板温度： 350℃ 上部電極回転数： 120 rpm 下部電極回転数： 120 rpm 成膜の結果は, 成長速度が5500±500 Å／分，膜厚の面
内分布が 3％, ストレスが(-3.0 ±0.5)×109dyne/cm2,
屈折率が1.500 である。 (1) 成膜の例２ 被膜の種類： P-SiON 膜 処理ガス： SiH4 90 SCCM N2O 110 SCCM N2 4500 SCCM ガス圧力： 4.0 Torr ＲＦ電力： 400 W 基板温度： 350℃ 上部電極回転数： 120 rpm 下部電極回転数： 120 rpm 成膜の結果は, 成長速度が3700Å／分，膜厚の面内分布
が 3％, ストレスが(-2.0 ±0.5)×109 dyne/cm2, 屈折
率が1.650 である。 (3）クリーニングの例 処理ガス： NF3 90 SCCM N2O 100 SCCM N2 4500 SCCM ガス圧力： 0.6 Torr ＲＦ電力： 700 W 基板温度： 350℃ 上部電極回転数： 120 rpm 下部電極回転数： 120 rpm このクリーニングにより，上記の(1),(2) の成膜でチャ
ンバ内に付着した被膜を除去することが可能である。EXAMPLE An example of film formation and an example of cleaning will be described with reference to the apparatus shown in FIG. (1) Example of film formation Type of film: Plasma silicon dioxide (P-SiO 2 ) film Processing gas: SiH 4 90 SCCM N 2 O 500 SCCM N 2 4500 SCCM Gas pressure: 4.0 Torr RF power: 520 W Substrate temperature : 350 ° C Upper electrode rotation speed: 120 rpm Lower electrode rotation speed: 120 rpm The results of film formation show that the growth rate is 5500 ± 500 Å / min, the in-plane distribution of film thickness is 3%, and the stress is (-3.0 ± 0.5 ) × 10 9 dyne / cm 2 ,
The refractive index is 1.500. (1) Example 2 of film formation Type of film: P-SiON film Processing gas: SiH 4 90 SCCM N 2 O 110 SCCM N 2 4500 SCCM Gas pressure: 4.0 Torr RF power: 400 W Substrate temperature: 350 ° C Upper electrode rotation Number: 120 rpm Lower electrode rotation speed: 120 rpm As a result of film formation, the growth rate was 3700Å / min, the in-plane distribution of film thickness was 3%, the stress was (-2.0 ± 0.5) × 10 9 dyne / cm 2 , The refractive index is 1.650. (3) Example of cleaning Process gas: NF 3 90 SCCM N 2 O 100 SCCM N 2 4500 SCCM Gas pressure: 0.6 Torr RF power: 700 W Substrate temperature: 350 ° C. Upper electrode rotation speed: 120 rpm Lower electrode rotation speed: 120 rpm By this cleaning, it is possible to remove the film adhering to the inside of the chamber in the film formation of the above (1) and (2).
【００１７】実施例では，プラズマ気相成長装置及びプ
ラズマ気相成長方法について説明したが，本発明はプラ
ズマを用いたエッチングにも，あるいは熱分解による気
相成長にも適用できることは明らかである。Although the embodiments have been described with reference to the plasma vapor deposition apparatus and the plasma vapor deposition method, it is apparent that the present invention can be applied to etching using plasma or vapor phase growth by thermal decomposition.
【００１８】[0018]
【発明の効果】本発明によれば，ウェーハ上のガス濃度
とプラズマ密度を短時間のうちに均一化できる。この結
果，成膜の際の膜質及び膜厚分布を均一にし，且つプラ
ズマクリーニングの際の反応生成物のエッチング残渣を
低減できる。According to the present invention, the gas concentration and the plasma density on the wafer can be made uniform within a short time. As a result, film quality and film thickness distribution during film formation can be made uniform, and etching residues of reaction products during plasma cleaning can be reduced.
【図１】 本発明の原理説明図FIG. 1 is a diagram illustrating the principle of the present invention.
【図２】 従来例の説明図FIG. 2 is an explanatory view of a conventional example.
1 反応室 2 ガスシャワーヘッドを兼ねる上部電極 3 下部電極 4 ＲＦ電源 5 ポンプ 6 ヒータ 7 ガス流量コントロールユニット 8 ウェーハ 9 上部電極を回転させるモータ 10 下部電極を回転させるモータ 1 Reaction chamber 2 Upper electrode also serving as gas shower head 3 Lower electrode 4 RF power supply 5 Pump 6 Heater 7 Gas flow control unit 8 Wafer 9 Motor for rotating upper electrode 10 Motor for rotating lower electrode
フロントページの続き (56)参考文献 特開 平３−203317（ＪＰ，Ａ) 特開 平３−82024（ＪＰ，Ａ) 特開 平５−13343（ＪＰ，Ａ) 特開 昭55−166927（ＪＰ，Ａ) 特開 平３−262119（ＪＰ，Ａ) 実開 昭61−153339（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/3065 H05H 1/46 C23C 16/00 Continuation of the front page (56) References JP-A-3-203317 (JP, A) JP-A-3-82024 (JP, A) JP-A-5-13343 (JP, A) JP-A-55-166927 (JP) , A) JP-A-3-262119 (JP, A) JP-A-61-153339 (JP, U) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21/205 H01L 21/3065 H05H 1/46 C23C 16/00
Claims (4)
と，該ウェーハを挟んで処理ガスの噴出面が該保持板に
ほぼ平行に置かれたガスシャワーヘッドと，該保持板を
回転する手段と，該ガスシャワーヘッドを該保持板とは
反対方向に回転する手段とを有することを特徴とする気
相成長装置。And 1. A holding plate for placing a wafer in a reaction chamber, a gas showerhead ejecting surface of the sandwich and process gas the wafer is placed substantially parallel to the holding plate, the holding plate
Means for rotating, feel the gas shower head and having a means for rotating the <br/> opposite direction to the retaining plate
Phase growth equipment .
し，前記保持板を下部電極として，両電極の間に印加す
る高周波電源を有することを特徴とする請求項１記載の
気相成長装置。2. The high-frequency power source according to claim 1, wherein said gas shower head is used as an upper electrode, and said holding plate is used as a lower electrode.
Vapor growth equipment .
用いて，前記保持板と前記ガスシャワーヘッドとを互い
に反対方向に回転しながら該ガスシャワーヘッドから処
理ガスを噴出して，前記ウェーハ上の成膜を行うことを
特徴とする気相成長方法。3. by using vapor phase growth apparatus according to claim 1 or 2 wherein, each other and with the holding plate the gas showerhead
While rotating in the opposite direction from the gas shower head.
A gas phase growth method , wherein a film is formed on the wafer by ejecting a processing gas .
ング方法であって，前記保持板と前記ガスシャワーヘッ
ドとを互いに反対方向に回転しながら該ガスシャワーヘ
ッドから処理ガスを噴出して，反応室内の成膜反応生成
物を除去することを特徴とする気相成長装置のクリーニ
ング方法。 4. A cleaner for a vapor phase growth apparatus according to claim 2.
The holding plate and the gas shower head.
To the gas shower while rotating
A process gas is blown out of the head to generate a film formation reaction in the reaction chamber.
Cleaner for vapor phase epitaxy, characterized by removing matter
Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18262695A JP3257356B2 (en) | 1995-07-19 | 1995-07-19 | Vapor phase growth apparatus, vapor phase growth method, and cleaning method for vapor phase growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18262695A JP3257356B2 (en) | 1995-07-19 | 1995-07-19 | Vapor phase growth apparatus, vapor phase growth method, and cleaning method for vapor phase growth apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0936046A JPH0936046A (en) | 1997-02-07 |
| JP3257356B2 true JP3257356B2 (en) | 2002-02-18 |
Family
ID=16121583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18262695A Expired - Fee Related JP3257356B2 (en) | 1995-07-19 | 1995-07-19 | Vapor phase growth apparatus, vapor phase growth method, and cleaning method for vapor phase growth apparatus |
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| Country | Link |
|---|---|
| JP (1) | JP3257356B2 (en) |
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|---|---|---|---|---|
| US8804113B2 (en) | 2010-03-19 | 2014-08-12 | Khs Gmbh | Cover view gripper |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6554905B1 (en) * | 2000-04-17 | 2003-04-29 | Asm America, Inc. | Rotating semiconductor processing apparatus |
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-
1995
- 1995-07-19 JP JP18262695A patent/JP3257356B2/en not_active Expired - Fee Related
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| US8804113B2 (en) | 2010-03-19 | 2014-08-12 | Khs Gmbh | Cover view gripper |
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| JPH0936046A (en) | 1997-02-07 |
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