JP3255985B2 - Thick film positive temperature coefficient thermistor composition, method for producing the same and thick film positive temperature coefficient thermistor - Google Patents
Thick film positive temperature coefficient thermistor composition, method for producing the same and thick film positive temperature coefficient thermistorInfo
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- JP3255985B2 JP3255985B2 JP25533792A JP25533792A JP3255985B2 JP 3255985 B2 JP3255985 B2 JP 3255985B2 JP 25533792 A JP25533792 A JP 25533792A JP 25533792 A JP25533792 A JP 25533792A JP 3255985 B2 JP3255985 B2 JP 3255985B2
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- Prior art keywords
- temperature coefficient
- copper
- thick film
- positive temperature
- coefficient thermistor
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Description
【０００１】[0001]
【産業上の利用分野】本発明は、正の抵抗温度係数を示
す厚膜正特性サーミスタ組成物、その製造方法および厚
膜正特性サーミスタに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film positive temperature coefficient thermistor composition exhibiting a positive temperature coefficient of resistance, a method for producing the same, and a thick film positive temperature coefficient thermistor.
【０００２】[0002]
【従来の技術】従来、正の温度係数を有する抵抗器とし
ては、例えばニッケル（Ｎｉ）または、ニッケル（Ｎ
ｉ）−クロム（Ｃｒ）などをアルミナ基板上に着膜し、
エッチングなどの技術により回路パターンを形成する薄
膜方式の構成が知られている。2. Description of the Related Art Conventionally, a resistor having a positive temperature coefficient is, for example, nickel (Ni) or nickel (N).
i) depositing chromium (Cr) or the like on an alumina substrate,
2. Description of the Related Art A configuration of a thin film type in which a circuit pattern is formed by a technique such as etching is known.
【０００３】しかしながら、上記従来の抵抗器では、薄
膜方式により製造されるため、その製造方法は煩雑で、
しかも厳しい条件が要求されている。However, since the above-mentioned conventional resistor is manufactured by a thin film method, the manufacturing method is complicated.
Moreover, strict conditions are required.
【０００４】このため、より簡便かつ低廉で量産可能な
抵抗器およびその製造方法が望まれている。[0004] Therefore, there is a demand for a simpler, less expensive resistor that can be mass-produced and a method of manufacturing the resistor.
【０００５】一方、加熱焼成する厚膜方式の構成も知ら
れているが、この厚膜方式では空気中で加熱焼成するた
め、酸化しやすいニッケル（Ｎｉ）または、ニッケル
（Ｎｉ）−クロム（Ｃｒ）などの金属類を使用すること
ができない。[0005] On the other hand, a thick-film type structure in which heating and firing is performed is also known. However, in this thick-film type, since heating and firing are performed in air, nickel (Ni) or nickel (Ni) -chromium (Cr) which is easily oxidized is used. ) Cannot be used.
【０００６】ところで、金属は一般に酸化物になると半
導体または絶縁体となるが、この酸化物のうち、酸化ル
テニウム（ＲｕＯ２）は金属的伝導を示す酸化物として
知られている。この酸化ルテニウムは、温度係数が約＋
３０００ｐｐｍ／℃であるが、ガラス粉末と混合して加
熱焼成すると、＋８００ｐｐｍ／℃程度まで低下する。[0006] By the way, a metal generally turns into a semiconductor or an insulator when turned into an oxide. Among these oxides, ruthenium oxide (RuO 2 ) is known as an oxide exhibiting metallic conduction. This ruthenium oxide has a temperature coefficient of about +
Although it is 3000 ppm / ° C., when it is mixed with glass powder and heated and baked, the temperature decreases to about +800 ppm / ° C.
【０００７】最近では、これに添加物を加え、約±１０
０ｐｐｍ／℃程度になるように調製されている。Recently, additives have been added to this, and
It is prepared to be about 0 ppm / ° C.
【０００８】そして、この温度係数を調整する添加物と
しては、抵抗温度係数（ＴＣＲ：Temperature Coeffici
ent of Resistance）を減少させるもの、すなわち負の
ＴＣＲ駆動体（ドライバ）として、酸化ニオブ（Ｎｂ２
Ｏ５）、酸化チタン（ＴｉＯ２）、酸化マンガン（Ｍｎ
２Ｏ３）、酸化ニッケル（ＮｉＯ）、酸化アンチモン
（Ｓｂ２Ｏ３）など、抵抗温度係数を増大させるもの、
すなわち正のＴＣＲ駆動体として、酸化銅（ＣｕＯ）が
知られている。An additive for adjusting the temperature coefficient includes a temperature coefficient of resistance (TCR: Temperature Coefficiency).
ent of Resistance), that is, as a negative TCR driver, niobium oxide (Nb 2
O 5 ), titanium oxide (TiO 2 ), manganese oxide (Mn)
2 O 3 ), nickel oxide (NiO), antimony oxide (Sb 2 O 3 ), etc., which increase the temperature coefficient of resistance,
That is, copper oxide (CuO) is known as a positive TCR driver.
【０００９】しかしながら、これらの添加物は、酸化ル
テニウムを主体とする抵抗ペーストの抵抗温度係数をあ
る限られた範囲、例えば±１００ｐｐｍ／℃内に設定す
るために微量添加されるものである。However, these additives are added in a small amount to set the temperature coefficient of resistance of the resistance paste mainly composed of ruthenium oxide within a certain limited range, for example, within ± 100 ppm / ° C.
【００１０】[0010]
【発明が解決しようとする課題】上述したように、薄膜
方式では、製造性が煩雑で所定の正の温度係数を得るた
めには製造の際の条件が厳しい。また、厚膜方式では、
加熱焼成するため、半導体または絶縁体となる酸化物に
酸化しやすい金属などを使用することができない問題が
ある。As described above, in the thin-film method, the manufacturability is complicated, and in order to obtain a predetermined positive temperature coefficient, the manufacturing conditions are severe. In the thick film method,
There is a problem that a metal which is easily oxidized into an oxide to be a semiconductor or an insulator cannot be used due to heating and baking.
【００１１】本発明は、上記問題点に鑑みなされたもの
で、大きな正の抵抗温度係数が得られる厚膜正特性サー
ミスタ組成物、その製造方法および厚膜正特性サーミス
タを提供することを目的とする。The present invention has been made in view of the above problems, and has as its object to provide a thick film positive temperature coefficient thermistor composition capable of obtaining a large positive temperature coefficient of resistance, a method of manufacturing the same, and a thick film positive temperature coefficient thermistor. I do.
【００１２】[0012]
【課題を解決するための手段】請求項１記載の厚膜正特
性サーミスタ組成物は、ルテニウム酸銅（ＣｕＲｕ
Ｏ３）およびガラスを含有するものである。The thick film positive temperature coefficient thermistor composition according to claim 1 is characterized in that the composition comprises copper ruthenate (CuRu).
O 3 ) and glass.
【００１３】請求項２記載の厚膜正特性サーミスタ組成
物は、請求項１記載の厚膜正特性サーミスタ組成物にお
いて、ルテニウム酸銅（ＣｕＲｕＯ３）は、銅（Ｃｕ）
の酸化物、水酸化物、炭酸塩およびシュウ酸塩の少なく
ともいずれか１種と、ルテニウム（Ｒｕ）の酸化物、水
酸化物、炭酸塩およびシュウ酸塩の少なくともいずれか
１種と、銅（Ｃｕ）−ルテニウム（Ｒｕ）の酸化物、水
酸化物、炭酸塩およびシュウ酸塩の少なくともいずれか
１種との少なくともいずれか２種が混合され加熱焼成さ
れて調整されたものである。The thick film positive temperature coefficient thermistor composition according to claim 2 is the thick film positive temperature coefficient thermistor composition according to claim 1, wherein copper ruthenate (CuRuO 3 ) is copper (Cu).
Oxides, hydroxides, and at least one kind of carbonate and oxalate, oxide of ruthenium (Ru), and at least any one of hydroxide, carbonate and oxalate, It is prepared by mixing at least any two of copper (Cu) -ruthenium (Ru) oxides, hydroxides, carbonates, and oxalates and heating and calcining the mixture.
【００１４】請求項３記載の厚膜正特性サーミスタ組成
物は、請求項１記載の厚膜正特性サーミスタ組成物にお
いて、ルテニウム酸銅（ＣｕＲｕＯ ３ ）は、銅（Ｃｕ）
の酸化物、水酸化物、炭酸塩およびシュウ酸塩の少なく
ともいずれか１種と、ルテニウム（Ｒｕ）の酸化物、水
酸化物、炭酸塩およびシュウ酸塩の少なくともいずれか
１種とが１:１のモル比で混合され加熱焼成されて調整
されたものである。 A thick film positive temperature coefficient thermistor composition according to claim 3.
The product is the thick film positive temperature coefficient thermistor composition according to claim 1.
And copper ruthenate (CuRuO 3 ) is copper (Cu)
Less of oxides, hydroxides, carbonates and oxalates
One of them, ruthenium (Ru) oxide, water
Oxides, carbonates and / or oxalates
One kind is mixed at a molar ratio of 1: 1 and heated and fired to adjust
It was done.
【００１５】請求項４記載の厚膜正特性サーミスタ組成
物の製造方法は、銅（Ｃｕ）の酸化物、水酸化物、炭酸
塩およびシュウ酸塩の少なくともいずれか１種と、ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか１種と、銅（Ｃｕ）−ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか１種との少なくともいずれ
か２種を混合して加熱焼成してルテニウム酸銅（ＣｕＲ
ｕＯ ３ ）を生成し、このルテニウム酸銅（ＣｕＲｕ
Ｏ ３ ）を粉砕し、この粉砕したルテニウム酸銅（ＣｕＲ
ｕＯ ３ ）と、ガラス粉末とを混合して厚膜ペーストを調
製し、この厚膜ペーストを加熱焼成するものである。[0015] The method according to claim 4 thick film PTC thermistor composition described, oxides of copper (Cu), hydroxides, and at least one kind of carbonate and oxalate, ruthenium (Ru ) And at least one of copper (Cu) -ruthenium (Ru) oxides, hydroxides, carbonates and oxalates At least any two of these are mixed and fired to form a copper ruthenate (CuR)
uO 3 ), and the copper ruthenate (CuRu)
O 3 ), and the ground copper ruthenate (CuR)
uO 3 ) and glass powder are mixed to prepare a thick film paste, and the thick film paste is heated and fired.
【００１６】請求項５記載の厚膜正特性サーミスタ組成
物の製造方法は、銅（Ｃｕ）の酸化物、水酸化物、炭酸
塩およびシュウ酸塩の少なくともいずれか１種と、ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか１種とを１:１のモル比で
混合して加熱焼成してルテニウム酸銅（ＣｕＲｕＯ ３ ）
を生成し、このルテニウム酸銅（ＣｕＲｕＯ ３ ）を粉砕
し、この粉砕したルテニウム酸銅（ＣｕＲｕＯ ３ ）と、
ガラス粉末とを混合して厚膜ペーストを調製し、この厚
膜ペーストを加熱焼成するものである。 A thick film positive temperature coefficient thermistor composition according to claim 5.
The manufacturing method of the product includes copper (Cu) oxide, hydroxide, and carbonic acid.
At least one of a salt and an oxalate;
Oxides, hydroxides, carbonates and sulphides of ruthenium (Ru)
At least one of the oxalates in a molar ratio of 1: 1
Mix, heat and sinter to make copper ruthenate (CuRuO 3 )
And crush this copper ruthenate (CuRuO 3 )
Then, this ground copper ruthenate (CuRuO 3 )
Thick film paste is prepared by mixing with glass powder.
The film paste is heated and fired.
【００１７】請求項６記載の厚膜正特性サーミスタは、
電気絶縁性を有する基板と、この基板の少なくとも対向
する端部に設けられた一対の電極と、これら電極間に跨
って形成された請求項１、２または３のいずれかに記載
の厚膜正特性サーミスタ組成物と、この厚膜正特性サー
ミスタ組成物および前記一対の電極の少なくとも一部を
被覆する保護膜とを具備したものである。According to a sixth aspect of the present invention, there is provided a thick film positive temperature coefficient thermistor.
A substrate having an electrically insulating, and a pair of electrodes provided at an end portion at least opposite the substrate, the thickness of any of claims 1, 2 or 3 formed across between the electrodes MakuTadashi A characteristic thermistor composition, and a thick film positive temperature coefficient thermistor composition and a protective film covering at least a part of the pair of electrodes.
【００１８】[0018]
【作用】請求項１記載の厚膜正特性サーミスタ組成物
は、金属的伝導を示す酸化ルテニウムと正の抵抗温度係
数の駆動体となる酸化銅との固溶体であるルテニウム酸
銅（ＣｕＲｕＯ３）およびガラスを含有するので、低抵
抗でかつ大きな抵抗温度係数が得られるとともに良好な
抵抗温度特性が得られる。According to a first aspect of the present invention, there is provided a thick film positive temperature coefficient thermistor composition comprising copper ruthenate (CuRuO 3 ), which is a solid solution of ruthenium oxide exhibiting metallic conduction and copper oxide serving as a driver having a positive temperature coefficient of resistance. Since glass is contained, low resistance and a large resistance temperature coefficient can be obtained, and good resistance temperature characteristics can be obtained.
【００１９】請求項２記載の厚膜正特性サーミスタ組成
物は、請求項１記載の厚膜正特性サーミスタ組成物にお
いて、銅（Ｃｕ）の酸化物、水酸化物、炭酸塩およびシ
ュウ酸塩の少なくともいずれか１種と、ルテニウム（Ｒ
ｕ）の酸化物、水酸化物、炭酸塩およびシュウ酸塩の少
なくともいずれか１種と、銅（Ｃｕ）−ルテニウム（Ｒ
ｕ）の酸化物、水酸化物、炭酸塩およびシュウ酸塩の少
なくともいずれか１種との少なくともいずれか２種との
混合物を加熱焼成してルテニウム酸銅（ＣｕＲｕＯ３）
を調整するため、容易に低抵抗でかつ大きな抵抗温度係
数が得られるとともに良好な抵抗温度特性が得られる。The thick film positive temperature coefficient thermistor composition according to claim 2 is the same as the thick film positive temperature coefficient thermistor composition according to claim 1 but not limited to the oxide, hydroxide, carbonate and oxalate of copper (Cu). At least one of them and ruthenium (R
u) oxides, hydroxides, carbonates and oxalates, and copper (Cu) -ruthenium (R)
A mixture of at least one of oxides, hydroxides, carbonates and oxalates of u) is heated and calcined to obtain copper ruthenate (CuRuO 3 )
, A low resistance, a large resistance temperature coefficient can be easily obtained, and good resistance temperature characteristics can be obtained.
【００２０】請求項３記載の厚膜正特性サーミスタ組成
物は、請求項１記載の厚膜正特性サーミスタ組成物にお
いて、銅（Ｃｕ）の酸化物、水酸化物、炭酸塩およびシ
ュウ酸塩の少なくともいずれか１種と、ルテニウム（Ｒ
ｕ）の酸化物、水酸化物、炭酸塩およびシュウ酸塩の少
なくともいずれか１種とが１:１のモル比で混合された
混合物を加熱焼成してルテニウム酸銅（ＣｕＲｕＯ ３ ）
を調整するため、容易に低抵抗でかつ大きな抵抗温度係
数が得られるとともに良好な抵抗温度特性が得られる。 A thick film positive temperature coefficient thermistor composition according to claim 3.
The product is the thick film positive temperature coefficient thermistor composition according to claim 1.
And copper (Cu) oxides, hydroxides, carbonates and
At least one of oxalate and ruthenium (R
low levels of oxides, hydroxides, carbonates and oxalates of u)
At least one of them was mixed at a molar ratio of 1: 1
The mixture is heated and calcined to form copper ruthenate (CuRuO 3 )
Low resistance and large resistance temperature
As a result, good resistance-temperature characteristics can be obtained.
【００２１】請求項４記載の厚膜正特性サーミスタ組成
物の製造方法は、銅（Ｃｕ）の酸化物、水酸化物、炭酸
塩およびシュウ酸塩の少なくともいずれか１種と、ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか１種と、銅（Ｃｕ）−ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか１種との少なくともいずれ
か２種を加熱焼成して生成したルテニウム酸銅（ＣｕＲ
ｕＯ ３ ）と、ガラス粉末とを混合して調製した厚膜ペー
ストを加熱焼成するため、低抵抗でかつ大きな抵抗温度
係数が得られるとともに良好な抵抗温度特性が得られる
厚膜正特性サーミスタが容易に得られる。According to a fourth aspect of the present invention, there is provided a method for producing a thick film positive temperature coefficient thermistor composition, comprising: at least one of oxides, hydroxides, carbonates and oxalates of copper (Cu), and ruthenium (Ru) And at least one of copper (Cu) -ruthenium (Ru) oxides, hydroxides, carbonates and oxalates Copper ruthenate (CuR) produced by heating and baking at least any two of
Since a thick film paste prepared by mixing uO 3 ) and glass powder is heated and baked, a thick film positive temperature coefficient thermistor that has a low resistance, a large resistance temperature coefficient, and a good resistance temperature characteristic can be easily obtained. Is obtained.
【００２２】請求項５記載の厚膜正特性サーミスタ組成
物の製造方法は、銅（Ｃｕ）の酸化物、水酸化物、炭酸
塩およびシュウ酸塩の少なくともいずれか１種と、ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか １種とを１:１のモル比で
混合して加熱焼成して生成されたルテニウム酸銅（Ｃｕ
ＲｕＯ ３ ）と、ガラス粉末とを混合して調製した厚膜ペ
ーストを加熱焼成するため、低抵抗でかつ大きな抵抗温
度係数が得られるとともに良好な抵抗温度特性が得られ
る厚膜正特性サーミスタが容易に得られる。 A thick film positive temperature coefficient thermistor composition according to claim 5.
The manufacturing method of the product includes copper (Cu) oxide, hydroxide, and carbonic acid.
At least one of a salt and an oxalate;
Oxides, hydroxides, carbonates and sulphides of ruthenium (Ru)
At least one of the oxalates in a molar ratio of 1: 1
Copper ruthenate (Cu
RuO 3 ) and a glass powder mixed with a thick film paint.
Low-resistance and large resistance temperature
Temperature coefficient and good resistance-temperature characteristics
A thick film positive temperature coefficient thermistor can be easily obtained.
【００２３】請求項６記載の厚膜正特性サーミスタは、
基板の少なくとも対向する端部に設けた一対の電極間に
跨って、請求項１、２または３のいずれかに記載のルテ
ニウム酸銅（ＣｕＲｕＯ ３ ）を含む厚膜正特性サーミス
タ組成物を形成し、この厚膜正特性サーミスタ組成物お
よび一対の電極の少なくとも一部を保護膜にて被覆する
ため、容易に低抵抗でかつ大きな抵抗温度係数が得られ
るとともに良好な抵抗温度特性が得られる。A thick film positive temperature coefficient thermistor according to claim 6 is
The rute according to claim 1 , wherein the lute straddles a pair of electrodes provided at least at opposite ends of the substrate.
A thick film positive temperature coefficient thermistor composition containing copper nitrate (CuRuO 3 ) is formed, and at least a part of the thick film positive temperature coefficient thermistor composition and a pair of electrodes are covered with a protective film. In addition, a large resistance temperature coefficient can be obtained, and good resistance temperature characteristics can be obtained.
【００２４】[0024]
【実施例】以下、本発明の厚膜正特性サーミスタを示す
一実施例を図面を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment showing a thick-film positive temperature coefficient thermistor of the present invention will be described below with reference to the drawings.
【００２５】図１および図２において、１は電気絶縁性
を有する基板である例えばアルミナ基板で、このアルミ
ナ基板１は略直方体形状に形成されている。そして、こ
のアルミナ基板１には、長手方向の両端面から両端部の
上下面に亘って断面略コ字状に、例えば銀（Ａｇ）−パ
ラジウム（Ｐｄ）系の電極２，２が印刷焼成にてそれぞ
れ設けられている。1 and 2, reference numeral 1 denotes an electrically insulating substrate, for example, an alumina substrate. The alumina substrate 1 is formed in a substantially rectangular parallelepiped shape. The alumina substrate 1 is provided with, for example, silver (Ag) -palladium (Pd) -based electrodes 2 and 2 having a substantially U-shaped cross section from both end surfaces in the longitudinal direction to upper and lower surfaces of both end portions. Each is provided.
【００２６】また、アルミナ基板１の一面には、対向す
る両端部に設けられた一対の電極２，２間に跨って厚膜
正特性サーミスタ体３が帯状に形成されている。この厚
膜正特性サーミスタは、ルテニウム酸銅（ＣｕＲｕ
Ｏ３）およびガラスを含有するもので、例えば銅（Ｃ
ｕ）の酸化物、水酸化物、炭酸塩およびシュウ酸塩の少
なくともいずれか１種と、ルテニウム（Ｒｕ）の酸化
物、水酸化物、炭酸塩およびシュウ酸塩の少なくともい
ずれか１種と、銅（Ｃｕ）−ルテニウム（Ｒｕ）の酸化
物、水酸化物、炭酸塩およびシュウ酸塩の少なくともい
ずれか１種との少なくともいずれか２種を混合し加熱焼
成して得られた酸化物と、ガラス粉末とを混合して調製
した厚膜ペーストを、印刷形成して加熱焼成により形成
される。On one surface of the alumina substrate 1, a thick-film positive temperature coefficient thermistor body 3 is formed in a band shape so as to extend between a pair of electrodes 2 and 2 provided at opposite ends. This thick film positive temperature coefficient thermistor is made of copper ruthenate (CuRu).
O 3 ) and glass, for example, copper (C
u) at least one of oxides, hydroxides, carbonates and oxalates, and ruthenium (Ru) at least one of oxides, hydroxides, carbonates and oxalates; An oxide obtained by mixing at least any two of copper (Cu) -ruthenium (Ru) oxides, hydroxides, carbonates and at least one of oxalates, followed by heating and firing; A thick film paste prepared by mixing with a glass powder is formed by printing and heating and firing.
【００２７】そして、この厚膜正特性サーミスタ体３に
は、電極２，２の対向方向に沿った一縁からアルミナ基
板１の幅方向に沿って切欠形成されたトリミング４が設
けられ、抵抗値が調整されている。The thick film positive temperature coefficient thermistor body 3 is provided with a trimming 4 cut out from one edge along the direction in which the electrodes 2 and 2 face each other and along the width direction of the alumina substrate 1. Has been adjusted.
【００２８】また、アルミナ基板１には、厚膜正特性サ
ーミスタ体３およびトリミング４の全面と、一対の電極
２，２の上面に位置する一部とを被覆する電気絶縁性の
例えばエポキシ樹脂などの保護膜５が塗布や印刷により
設けられている。なお、保護膜５は、ガラスなどでもよ
い。The alumina substrate 1 is provided with an electrically insulating material such as epoxy resin which covers the entire surface of the thick film positive temperature coefficient thermistor body 3 and the trimming 4 and a part located on the upper surfaces of the pair of electrodes 2 and 2. Is provided by coating or printing. Note that the protective film 5 may be glass or the like.
【００２９】さらに、保護膜５にて被覆されていない電
極２，２の表面には、例えばニッケル（Ｎｉ）、錫（Ｓ
ｎ）などの表面電極６，６がメッキやスパッタリングな
どによりそれぞれ設けられ、厚膜正特性サーミスタ７が
構成されている。Further, on the surfaces of the electrodes 2 and 2 not covered with the protective film 5, for example, nickel (Ni), tin (S
n) and other surface electrodes 6 and 6 are provided by plating and sputtering, respectively, to form a thick film positive temperature coefficient thermistor 7.
【００３０】次に、上記実施例の製造工程について説明
する。Next, the manufacturing process of the above embodiment will be described.
【００３１】まず、銅の酸化物である酸化銅（ＣｕＯ）
と、ルテニウムの酸化物である酸化ルテニウム（ＲｕＯ
２）とを１：１のモル比で混合する。そして、この酸化
銅と酸化ルテニウムとの混合粉末を成形した後、磁性る
つぼに入れて９００℃で１時間加熱焼成し、固相反応さ
せる。この加熱焼成により得られた酸化物をボールミル
にかけて粉末にする。なお、この粉末をＸ線回折により
分析した結果、ルテニウム酸銅（ＣｕＲｕＯ３）が同定
された。First, copper oxide (CuO) which is an oxide of copper
And ruthenium oxide (RuO) which is an oxide of ruthenium
2 ) and 1: 1 in a molar ratio. Then, after forming a mixed powder of copper oxide and ruthenium oxide, placed in a porcelain crucible and heated for 1 hour calcination at 900 ° C., a solid phase reaction of
To Ru. The oxide obtained by the heating and firing is subjected to a ball mill to make powder. As a result of analyzing the powder by X-ray diffraction, copper ruthenate (CuRuO 3 ) was identified.
【００３２】次に、この粉末を例えば４５重量％と、硼
珪酸鉛ガラス粉末５５重量％とを秤量し、自動混合機ま
たはボールミルにより混合して混合物を調製する。ここ
で、さらに例えば有機ビヒクルとして７重量％のエチル
セルロースを含むブチルカルビトールを混合物の２５重
量％となるように加え、３本ロールなどで十分に混合
し、厚膜正特性サーミスタペーストを調製する。Next, for example, 45% by weight of this powder and 55% by weight of lead borosilicate glass powder are weighed and mixed by an automatic mixer or a ball mill to prepare a mixture. Here, for example, butyl carbitol containing 7% by weight of ethylcellulose as an organic vehicle is added so as to be 25% by weight of the mixture, and the mixture is sufficiently mixed with a three-roll mill or the like to prepare a thick film positive temperature coefficient thermistor paste.
【００３３】そして、得られた厚膜正特性サーミスタペ
ーストを用いて、図１および図２に示すように、アルミ
ナ基板１の対向する端面近傍に印刷焼成により形成した
銀（Ａｇ）−パラジウム（Ｐｄ）系の電極２，２を跨い
で電気的に接続するように印刷し、８５０℃で１０分間
焼成して厚膜正特性サーミスタ体３を形成する。Then, using the obtained thick film positive temperature coefficient thermistor paste, as shown in FIGS. 1 and 2, silver (Ag) -palladium (Pd) formed by printing and baking near the opposing end faces of the alumina substrate 1. 2) Printing is performed so as to be electrically connected across the electrodes 2 and 2 of the system, and baked at 850 ° C. for 10 minutes to form the thick film positive temperature coefficient thermistor body 3.
【００３４】この後、必要に応じて、厚膜正特性サーミ
スタ体３にトリミング４を設けて抵抗値を調整する。な
お、トリミング４を設けなくてもよい。Thereafter, if necessary, a trimming 4 is provided on the thick film positive temperature coefficient thermistor body 3 to adjust the resistance value. Note that the trimming 4 need not be provided.
【００３５】次に、この厚膜正特性サーミスタ体３およ
びトリミング４の全面と、電極２，２の一部とを例えば
エポキシ樹脂などを塗布または印刷して被覆し、乾燥し
て硬化させ、電気絶縁性の保護膜５を形成する。Next, the entire surface of the thick film positive temperature coefficient thermistor body 3 and trimming 4 and a part of the electrodes 2 and 2 are coated or coated with, for example, an epoxy resin or the like, dried, cured, and cured. An insulating protective film 5 is formed.
【００３６】この後、保護膜５に被覆されていない電極
２，２の表面上をニッケル（Ｎｉ）、錫（Ｓｎ）などで
さらにメッキまたはスパッタリングなどにより半田付け
可能な表面電極６，６を形成し、厚膜正特性サーミスタ
７を得る。Thereafter, surface electrodes 6, 6 which can be soldered by plating or sputtering on the surfaces of the electrodes 2, 2 not covered with the protective film 5 with nickel (Ni), tin (Sn) or the like are formed. Thus, a thick film positive temperature coefficient thermistor 7 is obtained.
【００３７】この得られた厚膜正特性サーミスタ７の抵
抗値は、面積１ｍｍ２、膜厚１０μｍにおいて、９１．
３Ω（２５℃）、抵抗温度係数（ＴＣＲ）は２８５２ｐ
ｐｍ／℃（２５℃／１２５℃）で安定した特性であっ
た。The resistance of the resulting thick-film PTC thermistor 7 has an area 1 mm 2, at a thickness of 10 [mu] m, 91.
3Ω (25 ° C), temperature coefficient of resistance (TCR) 2852p
The characteristics were stable at pm / ° C (25 ° C / 125 ° C).
【００３８】次に、上記実施例の作用を説明する。Next, the operation of the above embodiment will be described.
【００３９】上述した製造工程に基づいて、ルテニウム
酸銅（ＣｕＲｕＯ３）とガラスとの組成比である酸化物
の粉末と硼珪酸鉛ガラス粉末との配合比を適宜設定して
作製した厚膜正特性サーミスタ７の試料の特性を表１に
示す。[0039] Based on the above-described manufacturing process, appropriately set <br/> prepared mixing ratio of the powder and lead borosilicate glass powder of ruthenium copper (CuRuO 3) an oxide having a composition ratio of the glass Table 1 shows the characteristics of the sample of the thick film positive temperature coefficient thermistor 7 obtained.
【００４０】[0040]
【表１】 [Table 1]
【００４１】この表１において、各試料の抵抗値は２５
℃で、膜厚１０μｍ、面積１ｍｍ２の値であり、抵抗温
度係数（ＴＣＲ）は数式１によって得られる。In Table 1, the resistance value of each sample was 25
At 10 ° C., the film thickness is 10 μm, the area is 1 mm 2 , and the temperature coefficient of resistance (TCR) is obtained by Equation 1.
【００４２】[0042]
【数１】 (Equation 1)
【００４３】この数式１によると、上記組成範囲では、
ガラスに対するルテニウム酸銅（ＣｕＲｕＯ３）の含有
量が増加するのに伴い、抵抗値が減少し抵抗温度係数が
増加する傾向にあることが分かる。According to this formula 1, in the above composition range,
It can be seen that as the content of copper ruthenate (CuRuO 3 ) in the glass increases, the resistance value tends to decrease and the temperature coefficient of resistance tends to increase.
【００４４】上述したように、上記実施例では、金属的
伝導を示す酸化ルテニウムと正の抵抗温度係数の駆動体
となる酸化銅との固溶体であるルテニウム酸銅（ＣｕＲ
ｕＯ３）を用いて厚膜正特性サーミスタ体３を形成した
ため、ガラス粉末と混合して加熱焼成しても抵抗温度係
数（ＴＣＲ）が低下せず、低抵抗でかつ抵抗温度係数が
高い厚膜正特性サーミスタを得ることができるととも
に、抵抗温度特性の直線性が良好な厚膜正特性サーミス
タを得ることができる。As described above, in the above embodiment, copper ruthenate (CuR), which is a solid solution of ruthenium oxide exhibiting metallic conduction and copper oxide serving as a driver having a positive temperature coefficient of resistance, is used.
Since the thick film positive temperature coefficient thermistor body 3 is formed using uO 3 ), the temperature coefficient of resistance (TCR) does not decrease even when it is mixed with glass powder and baked under heating, and the thick film has a low resistance and a high resistance temperature coefficient. A positive temperature coefficient thermistor can be obtained, and a thick film positive temperature coefficient thermistor having good linearity of resistance temperature characteristics can be obtained.
【００４５】また、銅（Ｃｕ）の酸化物、水酸化物、炭
酸塩およびシュウ酸塩の少なくともいずれか１種と、ル
テニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシ
ュウ酸塩の少なくともいずれか１種と、銅（Ｃｕ）−ル
テニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシ
ュウ酸塩の少なくともいずれか１種との少なくともいず
れか２種との混合物を加熱焼成してルテニウム酸銅（Ｃ
ｕＲｕＯ３）を調整するため、容易に低抵抗でかつ大き
な抵抗温度係数が得られ、良好な抵抗温度特性の直線性
が得られる。Further, at least one of oxides, hydroxides, carbonates and oxalates of copper (Cu) and oxides, hydroxides, carbonates and oxalates of ruthenium (Ru) are used. A mixture of at least one of them and at least any two of copper (Cu) -ruthenium (Ru) oxides, hydroxides, carbonates and oxalates is heated and calcined. Copper ruthenate (C
Since uRuO 3 ) is adjusted, a low resistance and a large resistance temperature coefficient can be easily obtained, and good linearity of resistance temperature characteristics can be obtained.
【００４６】さらに、厚膜正特性サーミスタ体３が通常
の厚膜形状であるため、チップ抵抗器と同様もしくは同
一の工程で製造でき、新たな工場設備が不要で、大量生
産に適し生産効率を向上でき、製造コストを低減でき
る。Further, since the thick-film positive temperature coefficient thermistor body 3 has a normal thick-film shape, it can be manufactured in the same or the same process as the chip resistor, no new factory equipment is required, and the production efficiency is suitable for mass production. The manufacturing cost can be reduced.
【００４７】また、混成集積回路（ＨＩＣ：Hybrid Int
egrated Circuit）化の際には、その製造時に温度補償
回路を同時に形成できる。A hybrid integrated circuit (HIC: Hybrid Int.
In the case of making an egrated circuit, a temperature compensating circuit can be formed at the time of manufacture.
【００４８】[0048]
【発明の効果】請求項１記載の厚膜正特性サーミスタ組
成物によれば、金属的伝導を示す酸化ルテニウムと正の
抵抗温度係数の駆動体となる酸化銅との固溶体であるル
テニウム酸銅（ＣｕＲｕＯ３）を用いることにより、ガ
ラス粉末と混合して加熱焼成しても抵抗温度係数（ＴＣ
Ｒ）が低下せず、低抵抗でかつ大きな抵抗温度係数が得
られるとともに良好な抵抗温度特性を得ることができ
る。According to the thick film positive temperature coefficient thermistor composition of the present invention, copper ruthenate (Ru) oxide which is a solid solution of ruthenium oxide exhibiting metallic conduction and copper oxide serving as a driver having a positive temperature coefficient of resistance is used. By using CuRuO 3 ), the temperature coefficient of resistance (TC
R) does not decrease, a low resistance, a large resistance temperature coefficient can be obtained, and good resistance temperature characteristics can be obtained.
【００４９】請求項２記載の厚膜正特性サーミスタ組成
物によれば、請求項１記載の厚膜正特性サーミスタ組成
物の効果に加え、銅（Ｃｕ）の酸化物、水酸化物、炭酸
塩およびシュウ酸塩の少なくともいずれか１種と、ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか１種と、銅（Ｃｕ）−ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか１種との少なくともいずれ
か２種との混合物を加熱焼成してルテニウム酸銅（Ｃｕ
ＲｕＯ３）を調整するため、容易に低抵抗でかつ大きな
抵抗温度係数で、良好な抵抗温度特性を得ることができ
る。According to the thick film positive temperature coefficient thermistor composition of claim 2, in addition to the effect of the thick film positive temperature coefficient thermistor composition of claim 1, an oxide, a hydroxide and a carbonate of copper (Cu) are added. And at least one of oxalates, at least one of oxides, hydroxides, carbonates and oxalates of ruthenium (Ru), and oxides of copper (Cu) -ruthenium (Ru) , A mixture of at least one of hydroxides, carbonates, and oxalates with at least one of them, and baking the mixture with copper ruthenate (Cu
To adjust the RuO 3), readily in and a low resistance large resistance temperature coefficient, it is possible to obtain a favorable resistance-temperature characteristic.
【００５０】請求項３記載の厚膜正特性サーミスタ組成
物によれば、請求項１記載の厚膜正特性サーミスタ組成
物の効果に加え、銅（Ｃｕ）の酸化物、水酸化物、炭酸
塩およびシュウ酸塩の少なくともいずれか１種と、ルテ
ニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュ
ウ酸塩の少なくともいずれか１種とが１:１のモル比で
混合された混合物を加熱焼成してルテニウム酸銅（Ｃｕ
ＲｕＯ ３ ）を調整するため、容易に低抵抗でかつ大きな
抵抗温度係数で、良好な抵抗温度特性を得ることができ
る。 A thick film positive temperature coefficient thermistor composition according to claim 3.
2. The thick film positive temperature coefficient thermistor composition according to claim 1,
Oxides, hydroxides, and carbonates of copper (Cu)
At least one of a salt and an oxalate;
Oxides, hydroxides, carbonates and sulphides of ruthenium (Ru)
At least one of the oxalates in a molar ratio of 1: 1
The mixed mixture is heated and fired to form copper ruthenate (Cu
RuO 3 ) is easily adjusted to have a low resistance and a large resistance.
Good temperature coefficient of resistance can be obtained with the temperature coefficient of resistance.
You.
【００５１】請求項４記載の厚膜正特性サーミスタ組成
物の製造方法によれば、銅（Ｃｕ）の酸化物、水酸化
物、炭酸塩およびシュウ酸塩の少なくともいずれか１種
と、ルテニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩お
よびシュウ酸塩の少なくともいずれか１種と、銅（Ｃ
ｕ）−ルテニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩
およびシュウ酸塩の少なくともいずれか１種との少なく
ともいずれか２種を加熱焼成してルテニウム酸銅（Ｃｕ
ＲｕＯ ３ ）を生成し、このルテニウム酸銅（ＣｕＲｕＯ
３ ）を粉砕し、この粉砕したルテニウム酸銅（ＣｕＲｕ
Ｏ ３ ）と、ガラス粉末とを混合して調製した厚膜ペース
トを加熱焼成するため、低抵抗でかつ大きな抵抗温度係
数で、良好な抵抗温度特性が得られる厚膜正特性サーミ
スタを容易に製造できる。[0051] According to the manufacturing method of claim 4 thick film thermistor composition according oxide of copper (Cu), hydroxides, and at least one kind of carbonate and oxalate, ruthenium ( Ru) at least one of oxides, hydroxides, carbonates and oxalates, and copper (C
u) -ruthenium (Ru) oxide, hydroxide, carbonate, and / or oxalate by heating and calcining at least any two of them to obtain copper ruthenate (Cu)
RuO 3 ), and this copper ruthenate (CuRuO 3 )
3 ), and pulverized copper ruthenate (CuRu)
The thick film paste prepared by mixing O 3 ) and glass powder is heated and fired, so that a thick film positive temperature coefficient thermistor with low resistance, large resistance temperature coefficient and good resistance temperature characteristics can be easily manufactured. it can.
【００５２】請求項５記載の厚膜正特性サーミスタ組成
物の製造方法によれば、銅（Ｃｕ）の酸化物、水酸化
物、炭酸塩およびシュウ酸塩の少なくともいずれか１種
と、ルテニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩お
よびシュウ酸塩の少なくともい ずれか１種とを１:１の
モル比で混合して加熱焼成してルテニウム酸銅（ＣｕＲ
ｕＯ ３ ）を生成し、このルテニウム酸銅（ＣｕＲｕ
Ｏ ３ ）を粉砕し、この粉砕したルテニウム酸銅（ＣｕＲ
ｕＯ ３ ）と、ガラス粉末とを混合して調製した厚膜ペー
ストを加熱焼成するため、低抵抗でかつ大きな抵抗温度
係数で、良好な抵抗温度特性が得られる厚膜正特性サー
ミスタを容易に製造できる。 A thick-film positive temperature coefficient thermistor composition according to claim 5.
According to the method for producing a product, an oxide of copper (Cu),
, Carbonate and / or oxalate
And ruthenium (Ru) oxides, hydroxides, carbonates
And the Sukunakutomoi Zureka one of oxalic acid salt of 1: 1
The mixture is mixed at a molar ratio and heated and fired to form copper ruthenate (CuR).
uO 3 ), and the copper ruthenate (CuRu)
O 3 ), and the ground copper ruthenate (CuR)
uO 3 ) and a glass powder,
Low resistance and large resistance temperature for heating and firing the strike
Thick film positive characteristic circuit with good resistance-temperature characteristics
Mister can be easily manufactured.
【００５３】請求項６記載の厚膜正特性サーミスタによ
れば、基板に設けた一対の電極間に跨って、請求項１、
２または３のいずれかに記載のルテニウム酸銅（ＣｕＲ
ｕＯ ３ ）を含む厚膜正特性サーミスタ組成物を形成し、
この厚膜正特性サーミスタ組成物および一対の電極の少
なくとも一部を保護膜にて被覆するため、容易に低抵抗
でかつ大きな抵抗温度係数で、良好な抵抗温度特性を得
ることができる。According to the thick film positive temperature coefficient thermistor according to the sixth aspect, it extends across a pair of electrodes provided on the substrate .
Copper ruthenate (CuR) according to any of 2 or 3
forming a thick film positive temperature coefficient thermistor composition comprising uO 3 ) ;
Since the thick film positive temperature coefficient thermistor composition and at least a part of the pair of electrodes are covered with the protective film, good resistance temperature characteristics can be easily obtained with a low resistance and a large resistance temperature coefficient.
【図１】本発明の一実施例を示す厚膜正特性サーミスタ
組成物を用いて形成された厚膜正特性サーミスタの平面
図である。FIG. 1 is a plan view of a thick-film PTC thermistor formed using a thick-film PTC thermistor composition according to an embodiment of the present invention.
【図２】同上Ａ−Ａ線縦断面図である。FIG. 2 is a vertical sectional view taken along line AA in FIG.
【図３】同上厚膜正特性サーミスタの試料番号１におけ
る抵抗値の温度特性図である。FIG. 3 is a temperature characteristic diagram of a resistance value of the same thick film positive temperature coefficient thermistor in Sample No. 1;
【図４】同上厚膜正特性サーミスタの試料番号２におけ
る抵抗値の温度特性図である。FIG. 4 is a temperature characteristic diagram of a resistance value of Sample No. 2 of the thick film positive temperature coefficient thermistor.
【図５】同上厚膜正特性サーミスタの試料番号３におけ
る抵抗値の温度特性図である。FIG. 5 is a temperature characteristic diagram of a resistance value of the same thick film positive temperature coefficient thermistor in Sample No. 3;
【図６】同上厚膜正特性サーミスタにおける厚膜正特性
サーミスタ組成物の組成比と抵抗値との関係を示す特性
図である。FIG. 6 is a characteristic diagram showing a relationship between a composition ratio of a thick-film PTC thermistor composition and a resistance value in the same thick-film PTC thermistor.
１ 基板としてのアルミナ基板 ２ 電極 ５ 保護膜 ７ 厚膜正特性サーミスタ Reference Signs List 1 alumina substrate as substrate 2 electrode 5 protective film 7 thick film positive temperature coefficient thermistor
Claims (6)
ガラスを含有することを特徴とする厚膜正特性サーミス
タ組成物。1. A thick-film positive temperature coefficient thermistor composition comprising copper ruthenate (CuRuO 3 ) and glass.
塩の少なくともいずれか１種と、 ルテニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩および
シュウ酸塩の少なくともいずれか１種と、 銅（Ｃｕ）−ルテニウム（Ｒｕ）の酸化物、水酸化物、
炭酸塩およびシュウ酸塩の少なくともいずれか１種との
少なくともいずれか２種が混合され加熱焼成されて調整
されたことを特徴とする請求項１記載の厚膜正特性サー
ミスタ組成物。2. Copper ruthenate (CuRuO 3 ) includes at least one of an oxide, a hydroxide, a carbonate, and an oxalate of copper (Cu), an oxide of ruthenium (Ru), and a hydroxide. , Carbonate and oxalate, and copper (Cu) -ruthenium (Ru) oxide, hydroxide,
2. The thick film positive temperature coefficient thermistor composition according to claim 1, wherein at least one of carbonate and oxalate is mixed and heated and calcined.
塩の少なくともいずれか１種と、 ルテニウム（Ｒｕ）の酸化物、水酸化物、炭酸塩および
シュウ酸塩の少なくともいずれか１種とが１:１のモル
比で混合され加熱焼成されて調整された ことを特徴とす
る請求項１記載の厚膜正特性サーミスタ組成物。 3. Copper ruthenate (CuRuO 3 ) is an oxide, hydroxide, carbonate and oxalic acid of copper (Cu).
At least one kind of salt, ruthenium (Ru) oxide, hydroxide, carbonate and
1: 1 mole of at least one of oxalates
Characterized by being mixed and heated and calcined at a specified ratio .
The thick film positive temperature coefficient thermistor composition according to claim 1.
およびシュウ酸塩の少なくともいずれか１種と、ルテニ
ウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュウ
酸塩の少なくともいずれか１種と、銅（Ｃｕ）−ルテニ
ウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュウ
酸塩の少なくともいずれか１種との少なくともいずれか
２種を混合して加熱焼成してルテニウム酸銅（ＣｕＲｕ
Ｏ ３ ）を生成し、このルテニウム酸銅（ＣｕＲｕＯ ３ ）
を粉砕し、この粉砕したルテニウム酸銅（ＣｕＲｕ
Ｏ ３ ）と、ガラス粉末とを混合して厚膜ペーストを調製
し、 この厚膜ペーストを加熱焼成することを特徴とする厚膜
正特性サーミスタ組成物の製造方法。4. An oxide, hydroxide, carbonate and oxalate of ruthenium (Ru) and at least one of oxides, hydroxides, carbonates and oxalates of copper (Cu) At least any one of the oxides, hydroxides, carbonates, and oxalates of copper (Cu) -ruthenium (Ru) is mixed with at least any two of them and heated and fired. Copper ruthenate (CuRu)
O 3 ) and the copper ruthenate (CuRuO 3 )
And pulverized copper ruthenate (CuRu)
O 3 ) and glass powder are mixed to prepare a thick film paste, and the thick film paste is heated and fired.
およびシュウ酸塩の少なくともいずれか１種と、ルテニ
ウム（Ｒｕ）の酸化物、水酸化物、炭酸塩およびシュウ
酸塩の少なくともいずれか１種とを１:１のモル比で混
合して加熱焼成してルテニウム酸銅（ＣｕＲｕＯ ３ ）を
生成し、このルテニウム酸銅（ＣｕＲｕＯ ３ ）を粉砕
し、この粉砕したルテニウム酸銅（ＣｕＲｕＯ ３ ）と、
ガラス粉末とを混合して厚膜ペーストを調製し、 この厚膜ペーストを加熱焼成する ことを特徴とする厚膜
正特性サーミスタ組成物の製造方法。 5. Oxides, hydroxides and carbonates of copper (Cu)
And at least one of oxalate and ruteni
Oxides, hydroxides, carbonates and oxalates of uranium (Ru)
At least one of the acid salts in a molar ratio of 1: 1.
And calcination to produce copper ruthenate (CuRuO 3 )
Produce and crush this copper ruthenate (CuRuO 3 )
Then, this ground copper ruthenate (CuRuO 3 )
The thick film paste was prepared by mixing glass powder, characterized by heating and firing the thick film paste thick
A method for producing a positive temperature coefficient thermistor composition.
電極と、 これら電極間に跨って形成された請求項１、２または３
のいずれかに記載の厚膜正特性サーミスタ組成物と、 この厚膜正特性サーミスタ組成物および前記一対の電極
の少なくとも一部を被覆する保護膜とを具備したことを
特徴とする厚膜正特性サーミスタ。A substrate having a wherein electrically insulating, and a pair of electrodes provided at an end portion at least opposite the substrate, according to claim 1 which is formed over between the electrodes, 2 or 3
The thick film positive temperature coefficient thermistor composition according to any one of the above, and a thick film positive temperature coefficient thermistor composition and a protective film covering at least a part of the pair of electrodes. Thermistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25533792A JP3255985B2 (en) | 1992-08-11 | 1992-08-11 | Thick film positive temperature coefficient thermistor composition, method for producing the same and thick film positive temperature coefficient thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25533792A JP3255985B2 (en) | 1992-08-11 | 1992-08-11 | Thick film positive temperature coefficient thermistor composition, method for producing the same and thick film positive temperature coefficient thermistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0661013A JPH0661013A (en) | 1994-03-04 |
| JP3255985B2 true JP3255985B2 (en) | 2002-02-12 |
Family
ID=17277388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25533792A Expired - Fee Related JP3255985B2 (en) | 1992-08-11 | 1992-08-11 | Thick film positive temperature coefficient thermistor composition, method for producing the same and thick film positive temperature coefficient thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3255985B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1128452C (en) * | 1997-06-16 | 2003-11-19 | 松下电器产业株式会社 | Resistance wiring board and method for manufacturing the same |
| CN104464991B (en) * | 2013-09-12 | 2017-06-06 | 中国振华集团云科电子有限公司 | A kind of preparation method of linear semistor slurry |
| CN105741903B (en) * | 2016-05-06 | 2017-04-05 | 西安电子科技大学 | A kind of preparation method of the modified ruthenic oxide thick-film resistor paste of Ag doping |
| JP6848327B2 (en) * | 2016-10-19 | 2021-03-24 | 住友金属鉱山株式会社 | A method for producing a composition for a positive temperature coefficient resistor, a paste for a positive temperature coefficient resistor, a positive temperature coefficient resistor, and a positive temperature coefficient resistor. |
| JP7271248B2 (en) * | 2019-03-20 | 2023-05-11 | ローム株式会社 | thermal print head |
| CN113405688B (en) * | 2021-06-22 | 2023-08-11 | 北京航空航天大学杭州创新研究院 | Nickel oxide-based wide-temperature-range high-precision temperature sensor and preparation method thereof |
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1992
- 1992-08-11 JP JP25533792A patent/JP3255985B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0661013A (en) | 1994-03-04 |
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