CN113405688B - Nickel oxide-based wide-temperature-range high-precision temperature sensor and preparation method thereof - Google Patents
Nickel oxide-based wide-temperature-range high-precision temperature sensor and preparation method thereof Download PDFInfo
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- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
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Abstract
The application relates to a wide temperature range high-precision temperature sensor based on nickel oxide and a preparation method thereof, wherein nickel oxide powder, a film forming agent, a surfactant and a solvent are used for preparing nickel oxide slurry in proper proportion, then the nickel oxide slurry is coated on a substrate to prepare a temperature sensitive layer, then an electrode is prepared on the temperature sensitive layer, and after PDMS encapsulation, the temperature sensor is prepared; the high-dispersion nickel oxide slurry is thermally cured to form a film, so that the temperature sensor can keep good stability and mechanical property in a wide temperature range; furthermore, as the nickel oxide has a good negative temperature resistance effect, the temperature sensor is ensured to have high-precision temperature measurement performance; the temperature sensor can realize a wide temperature range of 150K-470K, and simultaneously has 0.05K temperature difference measurement precision and a thermal constant exceeding 5000K. The temperature sensor has good flexibility, mechanical strength and stability.
Description
Technical Field
The application belongs to the technical field of sensors, and particularly relates to a nickel oxide-based wide-temperature-range high-precision temperature sensor and a preparation method thereof.
Background
The temperature is a physical quantity representing the cold and hot degree of an object, and plays a very important role in life. With the rapid development of the internet of things and intelligent devices, temperature sensors are becoming increasingly indispensable. Nickel oxide has been studied in a temperature sensor because of its excellent negative temperature resistance characteristics. However, the composition of the nickel oxide slurry reported at present has great limitation on film forming property, application range and temperature test interval. The prior art document (ACS appl. Mater. Interfaces 2013,5, 12954) discloses that a temperature sensor is obtained by using diethylene glycol, deionized water and nickel oxide to prepare an aqueous slurry, and using aerosol jet printing, and the thermal constant is 4300K. The slurry has problems of poor film forming property, mechanical properties and adhesiveness. The prior literature (adv. Mate.2020, 32, 1905527) discloses that isoamyl alcohol, cetyltrimethylammonium bromide, polyvinylpyrrolidone and nickel oxide are used for obtaining slurry through ultrasonic dispersion, and a temperature sensor is obtained after the slurry is coated on a flexible substrate and dried at normal temperature, and the film forming property of the system is greatly improved, but the mechanical property and the adhesiveness are poor; meanwhile, as the melting point of the polyvinylpyrrolidone is 130 ℃, the temperature measuring range of the temperature sensor prepared by the method is limited to 25-75 ℃, and the temperature sensor cannot work due to melting of the polyvinylpyrrolidone at high temperature.
Disclosure of Invention
In order to solve the problems in the prior art, the application provides a wide temperature range high-precision temperature sensor and a preparation method thereof. The temperature sensor realizes a wide temperature range of 150K-470K, and simultaneously has 0.05K temperature difference measurement precision and a thermal constant exceeding 5000K. The temperature sensor has good flexibility, mechanical strength and stability.
The technical scheme adopted by the application is as follows:
a preparation method of a wide temperature range high-precision temperature sensor based on nickel oxide comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, a film forming agent, a surfactant and a solvent, and performing ultrasonic dispersion to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking a substrate, carrying out pretreatment, uniformly coating the nickel oxide slurry on the substrate, and heating and curing to obtain a temperature sensitive layer;
(3) Preparation of interdigital electrode
Preparing an electrode on top of the temperature sensitive layer of step (2);
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing to obtain the temperature sensor.
The film forming agent is one or a combination of more of polyimide solution, ethyl cellulose and polymethyl methacrylate.
The surfactant is one or two of cetyl trimethyl ammonium bromide and sodium dodecyl sulfate.
The solvent is one or two of N, N-dimethylformamide and N, N-dimethylacetamide.
The mass ratio of the nickel oxide to the film forming agent is 0.1-0.9:1; the mass ratio of the nickel oxide to the surfactant is 1:0-0.1; the mass ratio of the nickel oxide to the solvent is 1:0.5-5.
In the step (2), the substrate is a rigid substrate or a flexible substrate;
the rigid substrate comprises one or more of aluminum nitride, silicon oxide, glass; the flexible substrate is one or the combination of two of PI and PET. The coarse substrate is obtained by selecting or polishing, and the nickel oxide slurry is prepared on the coarse substrate to obtain the combination property, so that the flexibility and the mechanical property of the temperature sensor are improved.
When the substrate is a smooth substrate, the method further comprises a step of stripping to strip the substrate before the PDMS packaging in the step (4); the specific operation of the stripping is as follows:
and (3) soaking the device after the electrode is prepared in the step (3) in deionized water until the device is desorbed from the substrate. Therefore, the self-supporting flexible temperature sensor is prepared by selecting a smooth substrate such as glass and the like, and peeling is realized by soaking the substrate in water, so that the self-supporting flexible temperature sensor is prepared.
In the step (2), the heating and curing are as follows: heating at 60-90 deg.C for 1 hr, and heating at 120-180 deg.C for 1 hr to complete the solidification.
In the step (3), the method for preparing the electrode adopts any one of metal evaporation, knife coating or magnetic control sputtering;
the electrode material is any one of silver, titanium, copper, gold and platinum;
the thickness of the electrode is 10nm-10um.
The wide temperature range high-precision temperature sensor prepared by the method.
The beneficial effects of the application are as follows:
according to the wide temperature range high-precision temperature sensor, nickel oxide powder, a film forming agent such as polyimide solution, a surfactant and a solvent are used for preparing nickel oxide slurry in a proper proportion, then the nickel oxide slurry is coated on a substrate to prepare a temperature sensitive layer, then an electrode is prepared on the temperature sensitive layer, and after PDMS (polydimethylsiloxane) is packaged, the temperature sensor is prepared, and because the adopted film forming agent has excellent high and low temperature resistance, the thermal decomposition temperature is up to 800K, and the film forming agent can be used for a long time at the temperature of 30K-500K, the high-dispersion nickel oxide slurry is thermally cured to form a film, so that the temperature sensor can keep good stability and mechanical property in a wide temperature range; furthermore, as the nickel oxide has a good negative temperature resistance effect, the temperature sensor is ensured to have high-precision temperature measurement performance; the temperature sensor can realize a wide temperature range of 150K-470K, and simultaneously has 0.05K temperature difference measurement precision and a thermal constant exceeding 5000K. The temperature sensor has good flexibility, mechanical strength and stability.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a self-supporting temperature sensor (unpackaged PDMS) according to embodiment 1 of the present application;
FIG. 2 is a schematic diagram of the temperature sensor (unpackaged PDMS) according to example 2 of the present application;
FIG. 3 is a schematic diagram of a temperature sensor according to embodiment 2 of the present application;
FIG. 4 is a graph showing the resistance change of the temperature sensor obtained in example 1 of the present application at a temperature difference of 0.05 degrees Celsius;
FIG. 5 is a graph showing the resistance change between 300K and 470K of the temperature sensor according to example 1 of the present application;
FIG. 6 is a graph showing the resistance change of the temperature sensor obtained in example 1 of the present application in the range of 150K to 300K;
FIG. 7 is a graph showing the resistance change of the temperature sensor obtained in example 4 of the present application at 300K-430K;
FIG. 8 is a graph showing the resistance change of the temperature sensor obtained in example 4 of the present application at 300K-430K.
In the figure, 1-PDMS, 2-electrode, 3-temperature sensitive layer, 4-substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail below. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, based on the examples herein, which are within the scope of the application as defined by the claims, will be within the scope of the application as defined by the claims.
Example 1
The embodiment provides a preparation method of a self-supporting temperature sensor, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, polyimide solution and hexadecyl trimethyl ammonium bromide according to the mass ratio of 0.5:1:0.05, adding solvent N, N-dimethylformamide (the mass ratio of nickel oxide to solvent is 1:2.5), mixing, and performing ultrasonic dispersion in a centrifuge tube until the nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking glass as a substrate, carrying out plasma cleaning on the substrate, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 80 ℃ for 1h, heating at 120 ℃ for 1h, and curing to obtain a temperature sensitive layer;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a metal evaporation method, wherein the electrode comprises the following specific operations: covering a stainless steel metal interdigital electrode mask plate on the temperature sensitive layer, and evaporating a titanium electrode, namely preparing an electrode with the thickness of 10nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
Immersing the device after the electrode is prepared in the step (3) in deionized water until the device is desorbed from the substrate (the structure is shown in figure 1); and spin-coating PDMS on the electrode of the device, and curing in an oven to obtain the self-supporting temperature sensor.
As shown in fig. 4, the temperature sensor according to the present embodiment has a resistance change curve at a temperature difference of 0.05 degrees celsius, and it can be seen from the graph that a slight change in temperature can be detected by a change in sensor resistance. In the figure, 50% NiO refers to the mass fraction of nickel oxide to PI.
As shown in fig. 5, the resistance change curve of the temperature sensor at 300K-470K according to the present embodiment can be seen from the figure: in this range, as the temperature increases, the resistance is continuously reduced, a good negative temperature resistance effect is shown, and the detection of temperature change is realized.
As shown in fig. 6, the resistance change curve of the temperature sensor at 150K-300K according to the present embodiment can be seen from the graph: at low temperatures, the sensor also achieves a sensitive response and measurement to temperature.
Example 2
The embodiment provides a preparation method of a temperature sensor with a substrate, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, polyimide solution and hexadecyl trimethyl ammonium bromide according to the mass ratio of 0.1:1:0.05, adding solvent N, N-dimethylformamide (the mass ratio of nickel oxide to solvent is 1:5), mixing, and performing ultrasonic dispersion in a centrifuge tube until the nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking aluminum nitride as a substrate, carrying out plasma cleaning on the substrate, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 80 ℃ for 1h, heating at 120 ℃ for 1h, and obtaining a temperature sensitive layer after curing;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a metal evaporation method, wherein the electrode comprises the following specific operations: covering a stainless steel metal interdigital electrode mask plate on the temperature sensitive layer, and evaporating a titanium electrode, namely preparing an electrode with the thickness of 10nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing in an oven to obtain the temperature sensor, wherein structures of the temperature sensor before and after packaging the PDMS are respectively shown in fig. 2 and 3.
Example 3
The embodiment provides a preparation method of a temperature sensor with a substrate, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder and polyimide solution according to the mass ratio of 0.3:1, adding solvent N, N-dimethylacetamide (the mass ratio of nickel oxide to solvent is 1:0.5), mixing, and performing ultrasonic dispersion in a centrifuge tube until nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking silicon oxide as a substrate, carrying out plasma cleaning on the substrate, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 80 ℃ for 1h, heating at 120 ℃ for 1h, and obtaining a temperature sensitive layer after curing;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a metal evaporation method, wherein the electrode comprises the following specific operations: covering a stainless steel metal interdigital electrode mask plate on the temperature sensitive layer, evaporating a copper electrode, namely preparing an electrode with the thickness of 20nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing in an oven to obtain the temperature sensor.
Example 4
The embodiment provides a preparation method of a temperature sensor with a substrate, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, polyimide solution and hexadecyl trimethyl ammonium bromide according to the mass ratio of 0.4:1:0.05, adding solvent N, N-dimethylformamide (the mass ratio of nickel oxide to solvent is 1:3), mixing, and performing ultrasonic dispersion in a centrifuge tube until the nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking PI as a substrate, polishing the substrate by sand paper, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 80 ℃ for 1h, heating at 120 ℃ for 1h, and curing to obtain a temperature sensitive layer;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a metal evaporation method, wherein the electrode comprises the following specific operations: covering a stainless steel metal interdigital electrode mask plate on the temperature sensitive layer, evaporating a gold electrode, namely preparing an electrode with the thickness of 15nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing in an oven to obtain the temperature sensor.
As shown in fig. 7, the resistance change curves of the temperature sensor obtained in this embodiment at 300K-470K can be seen from the graph: in this range, as the temperature increases, the resistance is continuously reduced, a good negative temperature resistance effect is shown, and the detection of temperature change is realized.
Example 5
The embodiment provides a preparation method of a temperature sensor with a substrate, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, polyimide solution and hexadecyl trimethyl ammonium bromide according to the mass ratio of 0.3:1:0.01, adding solvent N, N-dimethylformamide (the mass ratio of nickel oxide to solvent is 1:1.5), mixing, and performing ultrasonic dispersion in a centrifuge tube until the nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking PET as a substrate, carrying out oxygen plasma cleaning on the substrate, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 80 ℃ for 1h, heating at 120 ℃ for 1h, and obtaining a temperature sensitive layer after curing;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a silver paste knife coating method, wherein the electrode comprises the following specific operations: pasting a PET interdigital electrode mask plate on a temperature sensitive layer, then scraping silver paste on the PET interdigital electrode mask plate, drying the silver paste, and removing PET, namely preparing an electrode with the thickness of 15nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing in an oven to obtain the temperature sensor.
As shown in fig. 8, the resistance change curves of the temperature sensor obtained in this embodiment at 300K-470K can be seen from the graph: in this range, as the temperature increases, the resistance is continuously reduced, a good negative temperature resistance effect is shown, and the detection of temperature change is realized.
Example 6
The embodiment provides a preparation method of a temperature sensor with a substrate, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, polyimide solution and hexadecyl trimethyl ammonium bromide according to the mass ratio of 0.9:1:0.1, adding solvent N, N-dimethylformamide (the mass ratio of nickel oxide to solvent is 1:3), mixing, and performing ultrasonic dispersion in a centrifuge tube until nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking silicon oxide as a substrate, carrying out plasma cleaning on the substrate, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 80 ℃ for 1h, heating at 120 ℃ for 1h, and obtaining a temperature sensitive layer after curing;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a metal evaporation method, wherein the electrode comprises the following specific operations: covering a stainless steel metal interdigital electrode mask plate on the temperature sensitive layer, evaporating a copper electrode, namely preparing an electrode with the thickness of 12nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing in an oven to obtain the temperature sensor.
Example 7
The embodiment provides a preparation method of a temperature sensor with a substrate, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, polyimide solution and hexadecyl trimethyl ammonium bromide according to the mass ratio of 0.9:1:0.1, adding solvent N, N-dimethylformamide (the mass ratio of nickel oxide to solvent is 1:2.5), mixing, and performing ultrasonic dispersion in a centrifuge tube until nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking silicon oxide as a substrate, carrying out plasma cleaning on the substrate, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 60 ℃ for 1h, heating at 120 ℃ for 1h, and obtaining a temperature sensitive layer after curing;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a metal evaporation method, wherein the electrode comprises the following specific operations: covering a stainless steel metal interdigital electrode mask plate on the temperature sensitive layer, evaporating a copper electrode, namely preparing an electrode with the thickness of 12nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing in an oven to obtain the temperature sensor.
Example 8
The embodiment provides a preparation method of a temperature sensor with a substrate, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, ethyl cellulose solution and sodium dodecyl sulfate according to the mass ratio of 0.9:1:0.1, adding solvent N, N-dimethylformamide (the mass ratio of nickel oxide to solvent is 1:2), mixing, and performing ultrasonic dispersion in a centrifuge tube until nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking silicon oxide as a substrate, carrying out plasma cleaning on the substrate, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 90 ℃ for 1h, heating at 180 ℃ for 1h, and obtaining a temperature sensitive layer after curing;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a metal evaporation method, wherein the electrode comprises the following specific operations: covering a stainless steel metal interdigital electrode mask plate on the temperature sensitive layer, evaporating a copper electrode, namely preparing an electrode with the thickness of 12nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing in an oven to obtain the temperature sensor.
Example 9
The embodiment provides a preparation method of a temperature sensor with a substrate, which comprises the following steps:
(1) Preparing slurry:
respectively weighing nickel oxide powder, polyethylene methyl acrylate solution and cetyltrimethylammonium bromide according to the mass ratio of 0.9:1:0.1, adding solvent N, N-dimethylformamide (the mass volume ratio of polyimide solution to solvent is 1g:2 ml), mixing, and performing ultrasonic dispersion in a centrifuge tube until nickel oxide is uniformly dispersed to obtain nickel oxide slurry;
(2) Preparing a temperature sensitive layer:
taking silicon oxide as a substrate, carrying out plasma cleaning on the substrate, uniformly coating the nickel oxide slurry on the pretreated substrate, heating at 80 ℃ for 1h, heating at 130 ℃ for 1h, and obtaining a temperature sensitive layer after curing;
(3) Preparation of interdigital electrode
Preparing an electrode on the temperature sensitive layer in the step (2) by adopting a metal evaporation method, wherein the electrode comprises the following specific operations: covering a stainless steel metal interdigital electrode mask plate on the temperature sensitive layer, evaporating a copper electrode, namely preparing an electrode with the thickness of 12nm on the temperature sensitive layer;
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing in an oven to obtain the temperature sensor.
Experimental example
The temperature sensors obtained in examples 1, 3 and 4 were subjected to resistance and thermal constant detection, the prepared samples were placed in a closed probe stage, temperature control was performed by a temperature control element in the probe stage, the change in resistance value of the samples was measured using a two-probe method (voltage-applied measuring current), and the corresponding thermal constant values were calculated. The results are shown in Table 1, where 30%, 40% and 50% nickel oxide refer to nickel oxide in the mass fractions of film former of 30% (example 3), 40% (example 4) and 50% (example 1), respectively.
Wherein the thermal constant is calculated according to the following formula.
Wherein T is 1 、T 2 Absolute temperature, general T 1 The value of (2) is 298.15K (25 ℃), T 2 The value of (2) was 323.15K (50 ℃).
TABLE 1
| Sample of | 298K resistor (omega) | 323K resistor (omega) | Thermal constant (K) |
| 30% Nickel oxide | 1.41*10 12 | 5.56*10 11 | 3579 |
| 40% Nickel oxide | 4.25*10 8 | 1.15*10 8 | 5027 |
| 50% nickel oxide | 3.36*10 8 | 8.77*10 7 | 5166 |
As can be seen from Table 1, the temperature sensor obtained by the present application has a thermal constant as high as 5000 or more K.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any person skilled in the art will readily recognize that variations or substitutions are within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (8)
1. The preparation method of the nickel oxide-based wide-temperature-range high-precision temperature sensor is characterized by comprising the following steps of:
(1) Preparing slurry:
respectively weighing nickel oxide powder, a film forming agent, a surfactant and a solvent, and performing ultrasonic dispersion to obtain nickel oxide slurry;
the film forming agent is one or a combination of more of polyimide solution, ethyl cellulose and polymethyl methacrylate;
the surfactant is one or the combination of two of hexadecyl trimethyl ammonium bromide and sodium dodecyl sulfate;
the mass ratio of the nickel oxide to the film forming agent is 0.1-0.9:1, a step of; the mass ratio of the nickel oxide to the surfactant is 1:0-0.1;
(2) Preparing a temperature sensitive layer:
taking a substrate, carrying out pretreatment, uniformly coating the nickel oxide slurry on the substrate, and heating and curing to obtain a temperature sensitive layer;
(3) Preparation of interdigital electrode
Preparing an electrode on top of the temperature sensitive layer of step (2);
(4) PDMS (polydimethylsiloxane) package
And (3) spin-coating PDMS on the electrode obtained in the step (3), and curing to obtain the temperature sensor.
2. The method according to claim 1, wherein in the step (1), the solvent is one or a combination of two of N, N-dimethylformamide and N, N-dimethylacetamide.
3. The method according to claim 1, wherein in the step (1), the mass ratio of nickel oxide to the solvent is 1:0.5-5.
4. The method of claim 1, wherein in step (2), the substrate is a rigid substrate or a flexible substrate;
the rigid substrate comprises one or more of aluminum nitride, silicon oxide, glass; the flexible substrate is one or the combination of two of PI and PET.
5. The method of claim 4, further comprising a step of peeling off the substrate before the PDMS encapsulation in step (4); the specific operation of the stripping is as follows:
and (3) soaking the device after the electrode is prepared in the step (3) in deionized water until the device is desorbed from the substrate.
6. The method of claim 1, wherein in step (2), the heat curing is: heating at 60-90 deg.C for 1 hr, and heating at 120-180 deg.C for 1 hr to complete the solidification.
7. The method of claim 1, wherein in step (3), the method of preparing the electrode is any one of metal evaporation, blade coating or magnetron sputtering;
the electrode material is any one of silver, titanium, copper, gold and platinum;
the thickness of the electrode is 10nm-10um.
8. A wide temperature range high accuracy temperature sensor prepared by the method of any one of claims 1 to 7.
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| JPH0661013A (en) * | 1992-08-11 | 1994-03-04 | Koa Corp | Thick film positive temperature coefficient thermistor composition and manufacture thereof as well as thick film positive temperature coefficient thermistor using the composition |
| CN112479681A (en) * | 2020-11-24 | 2021-03-12 | 青岛三元传感技术有限公司 | Negative temperature coefficient thermistor chip and preparation method thereof |
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| US11085833B2 (en) * | 2018-10-31 | 2021-08-10 | Xerox Corporation | Temperature sensor ink composition with metal oxide nanoparticles |
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|---|---|---|---|---|
| JPH0661013A (en) * | 1992-08-11 | 1994-03-04 | Koa Corp | Thick film positive temperature coefficient thermistor composition and manufacture thereof as well as thick film positive temperature coefficient thermistor using the composition |
| CN112479681A (en) * | 2020-11-24 | 2021-03-12 | 青岛三元传感技术有限公司 | Negative temperature coefficient thermistor chip and preparation method thereof |
Non-Patent Citations (1)
| Title |
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| Ultrawide Range and High-precision Temperature Monitoring based on NiO/Polyimide Hybrid Nanomaterials;Sicheng Wu;ChemNanoMat;第1-9页 * |
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