JPH0661013A - Thick film positive temperature coefficient thermistor composition and manufacture thereof as well as thick film positive temperature coefficient thermistor using the composition - Google Patents
Thick film positive temperature coefficient thermistor composition and manufacture thereof as well as thick film positive temperature coefficient thermistor using the compositionInfo
- Publication number
- JPH0661013A JPH0661013A JP4255337A JP25533792A JPH0661013A JP H0661013 A JPH0661013 A JP H0661013A JP 4255337 A JP4255337 A JP 4255337A JP 25533792 A JP25533792 A JP 25533792A JP H0661013 A JPH0661013 A JP H0661013A
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- thick film
- temperature coefficient
- positive temperature
- composition
- coefficient thermistor
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- Non-Adjustable Resistors (AREA)
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、厚膜正特性サーミスタ
用の厚膜正特性(正の抵抗温度係数)サーミスタ組成物
及びその製造方法、並びにこの組成物を用いた厚膜正特
性サーミスタに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thick film positive temperature coefficient (positive temperature coefficient of resistance) thermistor composition for a thick film positive temperature coefficient thermistor, a method for producing the same, and a thick film positive temperature coefficient thermistor using the composition. It is a thing.
【0002】[0002]
【従来の技術】従来、正の温度係数を有する抵抗器とし
ては、Ni又はNi−Cr等を例えばアルミナ基板上に
着膜し、エッチング等の技術により回路パターンを形成
したものが知られている。2. Description of the Related Art Conventionally, as a resistor having a positive temperature coefficient, there is known a resistor in which Ni or Ni-Cr is deposited on, for example, an alumina substrate and a circuit pattern is formed by a technique such as etching. .
【0003】しかしながら、これらは薄膜方式により製
造されるためその製造方法は煩雑であり、しかも厳しい
条件が要求されている。そのため、より簡便かつ低廉で
量産可能な物及びその製造方法が望まれている。However, since these are manufactured by the thin film method, the manufacturing method is complicated and strict conditions are required. Therefore, there is a demand for a simpler, less expensive product that can be mass-produced and a method for manufacturing the same.
【0004】[0004]
【発明が解決しようとする課題】厚膜方式では空気中で
加熱焼成を行なうため、酸化しやすいNi又はNi−C
rなどの金属類を使用することができない。In the thick film method, since heating and baking are performed in air, Ni or Ni-C, which is easily oxidized, is used.
Metals such as r cannot be used.
【0005】金属は一般に酸化物になると半導体又は絶
縁体となるが、その中にあってRuO2は金属的伝導を
示す酸化物として知られている。このRuO2は温度係
数が約+3000ppm/℃もあるが、ガラス粉末と混
合して加熱焼成すると、+800ppm/℃程度まで低
下する。最近ではこれに添加物を加え、約±100pp
m/℃程度になるように調製されてきている。A metal generally becomes a semiconductor or an insulator when it becomes an oxide, and RuO 2 in it is known as an oxide exhibiting metallic conductivity. This RuO 2 has a temperature coefficient of about +3000 ppm / ° C., but when it is mixed with glass powder and baked by heating, it decreases to about +800 ppm / ° C. Recently, additives have been added to this, about ± 100 pp
It has been prepared to be about m / ° C.
【0006】この場合の添加物としては、抵抗温度係数
(以下、TCR)を減少させるもの(負のTCR駆動体
(ドライバー))としてNb2O5、TiO2、Mn2
O3、NiO、Sb2O3等が、そして正のTCR駆動
体としてはCuOが、それぞれ知られている。The additives in this case are Nb 2 O 5 , TiO 2 and Mn 2 as additives (negative TCR driver) that reduce the temperature coefficient of resistance (TCR).
O 3 , NiO, Sb 2 O 3 and the like are known, and CuO is known as a positive TCR driver.
【0007】しかしながら、これらの添加物の使用目的
はRuO2を主体とする抵抗ペーストのTCRを或る限
られた範囲(例えば±100ppm/℃)内に設定する
ために極微量添加されるものであり、本発明の目的、構
成、及び効果において、相異している。However, the purpose of using these additives is to add a very small amount in order to set the TCR of the resistance paste mainly composed of RuO 2 within a certain limited range (eg ± 100 ppm / ° C). Yes, there is a difference in the object, configuration, and effect of the present invention.
【0008】本発明、RuO2と正のTCR駆動体であ
る例えばCuOをあらかじめ固相反応させて、より大き
なTCRを有する金属的伝導酸化物とし、ガラスと混合
して加熱焼成してもTCRが低下しない厚膜正特性サー
ミスタ組成物及びその製造方法、並びにこの組成物を用
いた厚膜正特性サーミスタを提供するものである。According to the present invention, RuO 2 and a positive TCR driver, for example, CuO, are preliminarily solid-phase reacted to form a metallic conductive oxide having a larger TCR, and even if mixed with glass and heated and fired, the TCR is obtained. Provided are a thick film positive temperature coefficient thermistor composition and a method for producing the same, and a thick film positive temperature coefficient thermistor using the composition.
【0009】[0009]
【課題を解決するための手段】本発明は、上述の課題を
解決することを目的としてなされたもので、上述の課題
を解決する一手段として以下の構成を備える。即ち、少
なくともCuとRu、又はCuとRuとから成る少なく
とも酸化物、水酸化物、炭酸塩、シュウ酸塩のいずれか
の組み合わせのうちの少なくとも2種を混合し加熱焼成
した化合物と、ガラスとよりなる厚膜正特性サーミスタ
組成物とする。The present invention has been made for the purpose of solving the above-mentioned problems, and has the following structure as one means for solving the above-mentioned problems. That is, a compound obtained by mixing and heating at least two kinds of at least Cu and Ru, or at least any combination of oxides, hydroxides, carbonates and oxalates composed of Cu and Ru, and glass. And a thick film positive temperature coefficient thermistor composition.
【0010】以上の厚膜正特性サーミスタ組成物は、少
なくともCuとRu、又はCuとRuとから成る少なく
とも酸化物、水酸化物、炭酸塩、シュウ酸塩のいずれか
の組み合わせのうちの少なくとも2種を混合し加熱焼成
した化合物を更に粉砕し秤量するA工程と、ガラス粉末
を秤量するB工程と、前記秤量2工程A、Bで得られた
各粉末を混合して厚膜ペーストを製造するC工程と、前
記C工程で得られた厚膜ペーストを加熱焼成するD工程
より製造される。The above thick film positive temperature coefficient thermistor composition comprises at least two of at least any combination of oxides, hydroxides, carbonates and oxalates consisting of at least Cu and Ru or at least Cu and Ru. A thick film paste is manufactured by mixing the seeds mixed and heated and fired with each other, the step A in which the compound is further crushed and weighed, the step B in which the glass powder is weighed, and the powders obtained in the steps 2 and A of the weighing 2 steps are mixed. It is manufactured by a C process and a D process of heating and baking the thick film paste obtained in the C process.
【0011】そして、これを厚膜正特性サーミスタに適
用する。Then, this is applied to a thick film positive temperature coefficient thermistor.
【0012】[0012]
【作用】以上の構成において、少なくともCuとRu、
又はCuとRuとから成る化合物の組み合わせのうちの
少なくとも2種類を混合し加熱焼成した化合物とから成
るので低抵抗であってTCRが低下せず、しかも抵抗温
度特性の直線性が良好な厚膜正特性サーミスタ組成物を
提供することができる。又、この厚膜正特性サーミスタ
組成物を使用することにより、生産効率を向上させるこ
とが可能となり、しかも混成集積回路(HIC)化の際
には、温度補償回路を同時に形成できる厚膜正特性サー
ミスタを提供することができる。In the above structure, at least Cu and Ru,
Or a compound obtained by mixing and heating at least two kinds of a combination of compounds consisting of Cu and Ru, so that the resistance is low, the TCR is not lowered, and the linearity of the resistance-temperature characteristic is good. A positive temperature coefficient thermistor composition can be provided. In addition, by using this thick film positive temperature coefficient thermistor composition, it is possible to improve the production efficiency, and at the time of forming a hybrid integrated circuit (HIC), a thick film positive temperature coefficient circuit can be simultaneously formed. A thermistor can be provided.
【0013】[0013]
【実施例】以下、図面を参照して本発明に係わる一実施
例を詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment according to the present invention will be described in detail below with reference to the drawings.
【0014】[第1実施例]CuOとRuO2とを予め
1:1のモル比で混合し、このCuOとRuO2との混
合粉末を成形した後、磁性ルツボに入れて、900℃で
1時間加熱焼成して固相反応させた。その後、この酸化
物をボールミルにかけて粉末にした。この粉末をX線回
折により分析したところ、CuRuO3なる化合物であ
ることが同定された。そして、この生成物粉末を45w
t%と、ホウケイ酸鉛ガラス粉末55wt%とを秤量
し、自動混合機又はボールミルにより混合して混合物と
する。[First Example] CuO and RuO 2 were mixed in advance in a molar ratio of 1: 1 and a mixed powder of CuO and RuO 2 was molded and then placed in a magnetic crucible and heated at 900 ° C. for 1 hour. The mixture was heated and baked for a time to cause a solid phase reaction. Then, this oxide was ball-milled into a powder. When this powder was analyzed by X-ray diffraction, it was identified as a compound called CuRuO 3 . And 45w of this product powder
t% and lead borosilicate glass powder 55 wt% are weighed and mixed by an automatic mixer or a ball mill to form a mixture.
【0015】ここで、更に有機ビヒクルとして7wt%
のエチルセルロースを含むブチルカルビトールを前記混
合物の25wt%となるように加え、3本ロール等で充
分に混合し厚膜正特性サーミスタペーストを得た。Here, as an organic vehicle, 7 wt% is further added.
Butyl carbitol containing ethyl cellulose was added so as to be 25 wt% of the above mixture, and thoroughly mixed with a three-roll or the like to obtain a thick film positive temperature coefficient thermistor paste.
【0016】上述した例では、Cu−Ru−O系の出発
物質として、CuOとRuO2とを使用したが、本発明
はこれに限定されるものではなく、例えば、CuとR
u、あるいはCuとRuからなる水酸化物や炭酸塩もし
くはシュウ酸塩などであってもよい。得られた厚膜正特
性サーミスタペーストを用いて、図1及び図2に示すよ
うに、アルミナ基板1の対向する端面近傍にAg−Pd
系電極2,2を印刷焼成して形成し、この電極2,2を
跨いで電気的に接続するように前記厚膜正特性サーミス
タペーストを印刷し、850℃で10分間焼成して厚膜
正特性サーミスタ体3を得る。必要に応じて、厚膜正特
性サーミスタ体3にトリミング4を施して抵抗値を調整
してもよい。次に、この厚膜正特性サーミスタ体3及び
トリミング4の全面及び電極2,2の一部が被覆するよ
うに電気絶縁性の保護膜5(例えばエポキシ樹脂等)を
塗布又は印刷し、乾燥して硬化させる。その後、保護膜
5に被覆されていない電極2,2の表面上をNi,S
n、等で更にメッキ又はスパッタリング等の手段により
半田付け可能な電極6,6を形成する。ここで、保護膜
5はガラス等であってもよい。In the above examples, CuO and RuO 2 were used as the starting materials of Cu-Ru-O system, but the present invention is not limited to this, and for example, Cu and R may be used.
It may be u, or a hydroxide, carbonate or oxalate of Cu and Ru. Using the obtained thick film positive temperature coefficient thermistor paste, as shown in FIGS. 1 and 2, Ag-Pd was formed in the vicinity of the facing end faces of the alumina substrate 1.
The system electrodes 2 and 2 are formed by printing and baking, and the thick film positive temperature coefficient thermistor paste is printed so as to electrically connect across the electrodes 2 and 2, and baking is performed at 850 ° C. for 10 minutes to form the thick film normal characteristics. The characteristic thermistor body 3 is obtained. If necessary, the thick film PTC thermistor body 3 may be trimmed 4 to adjust the resistance value. Next, an electrically insulating protective film 5 (eg, epoxy resin) is applied or printed so as to cover the entire surface of the thick film positive temperature coefficient thermistor body 3 and the trimming 4 and a part of the electrodes 2 and 2, and then dried. To cure. After that, the surface of the electrodes 2 and 2 not covered with the protective film 5 is Ni, S
Then, electrodes 6 and 6 which can be soldered are formed by means of plating or sputtering. Here, the protective film 5 may be glass or the like.
【0017】得られた厚膜正特性サーミスタの抵抗値
は、面積1mm2膜厚10μmにおいて、91.3Ω
(25℃)、TCRは2852ppm/℃(25℃/1
25℃)で安定した特性であった。The resistance value of the obtained thick film positive temperature coefficient thermistor is 91.3Ω when the area is 1 mm 2 and the film thickness is 10 μm.
(25 ° C), TCR is 2852ppm / ° C (25 ° C / 1
The characteristics were stable at 25 ° C.
【0018】別表1に、本発明の厚膜正特性サーミスタ
試料番号1ないし3のガラス及びCuRuO3の組成
比、抵抗値及びTCRを示す。Table 1 shows the composition ratio, resistance value and TCR of the thick film positive temperature coefficient thermistor sample Nos. 1 to 3 and CuRuO 3 of the present invention.
【0019】[0019]
【表1】 表1において各試料の抵抗値は25℃で膜厚10μm、
面積1mm2の値であり、TCRは下記の数式1によっ
て与えられる。[Table 1] In Table 1, the resistance value of each sample is 25 μC and the film thickness is 10 μm.
The area is a value of 1 mm 2 , and the TCR is given by the following mathematical formula 1.
【0020】[0020]
【数1】 これによると、この組成範囲では、ガラスに対するCu
RuO3の含有量が増加するのに伴い、抵抗値が減少し
TCRが増加する傾向にあることが分かる。[Equation 1] According to this, in this composition range, Cu for glass is
It can be seen that the resistance value tends to decrease and the TCR tends to increase as the content of RuO 3 increases.
【0021】以上の実施例ではCu源及びRu源として
それぞれCuOとRuO2とを用いたが、最終的にCu
とRuの酸化物となれば、他のCu化合物とRu化合物
の組み合わせでもよい。この表1より本発明の組成物を
用いて形成した厚膜正特性サーミスタは、CuとRu、
又はCuとRuから成る少なくとも酸化物、水酸化物、
炭酸塩、シュウ酸塩のいずれかの組み合わせのうちの少
なくとも2種を混合し加熱焼成した化合物を、金属的伝
導酸化物とすることにより、ガラス粉末と混合し加熱焼
成してもTCRが低下しない。このため、上述の厚膜正
特性サーミスタ組成物をセラミック基板の対向電極間に
跨るように印刷し、加熱焼成することにより、低抵抗で
TCRの高い厚膜正特性サーミスタを得ることができ
る。In the above examples, CuO and RuO 2 were used as the Cu source and the Ru source, respectively.
If it becomes an oxide of Ru and Ru, a combination of other Cu compound and Ru compound may be used. From Table 1, the thick film positive temperature coefficient thermistor formed by using the composition of the present invention is Cu and Ru,
Or at least an oxide or a hydroxide composed of Cu and Ru,
The compound obtained by mixing and heating at least two kinds of any combination of carbonate and oxalate is used as a metallic conductive oxide, so that the TCR does not decrease even when mixed with glass powder and baked. . Therefore, a thick film PTC thermistor having a low resistance and a high TCR can be obtained by printing the above thick film PTC thermistor composition so as to straddle the opposing electrodes of the ceramic substrate and heating and firing.
【0022】[0022]
【発明の効果】以上説明したように、本発明によれば、
低抵抗であって、しかもガラス粉末と混合し加熱焼成し
てもTCRが低下せず、抵抗温度特性の直線性が良好な
厚膜正特性サーミスタを得ることができる。又、正特性
サーミスタ部分が通常の厚膜形状であるため、チップ抵
抗器と同様もしくは同一の工程で製造が可能となり、新
たな工場設備が不要である。従って、大量生産に適して
おり生産効率が向上し、製造コストを低減させることが
できる。更に、混成集積回路(HIC)化の際には、そ
の製造時に、温度補償回路を同時に形成することも可能
である。以上のような厚膜正特性サーミスタ組成物及び
その製造方法並びにこの組成物を用いた厚膜正特性サー
ミスタを提供できる。As described above, according to the present invention,
It is possible to obtain a thick film positive temperature coefficient thermistor which has a low resistance, does not lower the TCR even when mixed with glass powder and heated and fired, and has a good linearity of resistance temperature characteristics. Further, since the positive temperature coefficient thermistor part has a normal thick film shape, it can be manufactured in the same process as or in the same process as the chip resistor, and new factory equipment is not required. Therefore, it is suitable for mass production, the production efficiency is improved, and the manufacturing cost can be reduced. Further, in the case of forming a hybrid integrated circuit (HIC), it is possible to simultaneously form the temperature compensation circuit at the time of manufacturing the hybrid integrated circuit (HIC). A thick film positive temperature coefficient thermistor composition, a method for producing the same, and a thick film positive temperature coefficient thermistor using the composition can be provided.
【図1】本発明の一実施例を示す厚膜正特性サーミスタ
組成物を用いて形成された厚膜正特性サーミスタの平面
図である。FIG. 1 is a plan view of a thick film positive temperature coefficient thermistor formed by using a thick film positive temperature coefficient thermistor composition according to an embodiment of the present invention.
【図2】同上A−A線縦断面図である。FIG. 2 is a vertical sectional view taken along line AA of the above.
【図3】本発明の一実施例を示す厚膜正特性サーミスタ
の試料番号1における抵抗値の温度特性図である。FIG. 3 is a temperature characteristic diagram of the resistance value of sample number 1 of the thick film positive temperature coefficient thermistor showing one embodiment of the present invention.
【図4】本発明の一実施例を示す厚膜正特性サーミスタ
の試料番号2における抵抗値の温度特性図である。FIG. 4 is a temperature characteristic diagram of the resistance value of sample number 2 of the thick film positive temperature coefficient thermistor showing one embodiment of the present invention.
【図5】本発明の一実施例を示す厚膜正特性サーミスタ
の試料番号3における抵抗値の温度特性図である。FIG. 5 is a temperature characteristic diagram of the resistance value of sample number 3 of the thick film positive temperature coefficient thermistor showing one embodiment of the present invention.
【図6】本発明の厚膜正特性サーミスタにおける厚膜正
特性サーミスタ組成物の組成比と抵抗値の特性図であ
る。FIG. 6 is a characteristic diagram of a composition ratio and a resistance value of a thick film positive temperature coefficient thermistor composition in the thick film positive temperature coefficient thermistor of the present invention.
1. 基板 2,6. 電極 3. 厚膜正特性サーミスタ体 4. トリミング 5. 保護膜 1. Substrate 2,6. Electrode 3. Thick film positive temperature coefficient thermistor body 4. Trimming 5. Protective film
Claims (3)
とから成る少なくとも酸化物、水酸化物、炭酸塩、シュ
ウ酸塩のいずれかの組み合わせのうちの少なくとも2種
を混合し加熱焼成した化合物と、ガラスとよりなること
を特徴とする厚膜正特性サーミスタ組成物。1. At least Cu and Ru, or Cu and Ru
A thick film positive characteristic comprising a compound obtained by mixing and heating at least two kinds of at least two kinds of a combination of at least an oxide, a hydroxide, a carbonate and an oxalate, and glass. Thermistor composition.
とから成る少なくとも酸化物、水酸化物、炭酸塩、シュ
ウ酸塩のいずれかの組み合わせのうちの少なくとも2種
を混合し加熱焼成した化合物を更に粉砕し秤量するA工
程と、ガラス粉末を秤量するB工程と、前記秤量2工程
A、Bで得られた各粉末を混合して厚膜ペーストを製造
するC工程と、前記C工程で得られた厚膜ペーストを加
熱焼成するD工程とからなることを特徴とする厚膜正特
性サーミスタ組成物の製造方法。2. At least Cu and Ru or Cu and Ru
And at least two oxides, hydroxides, carbonates, and oxalates are mixed and heated and calcined, and the compound A is further crushed and weighed, and glass powder is weighed. The process B includes a process B, a process C in which the powders obtained in the weighing processes A and B are mixed to produce a thick film paste, and a process D in which the thick film paste obtained in the process C is heated and fired. A method for producing a thick film positive temperature coefficient thermistor composition, comprising:
と、 前記基板の少なくとも対向する両端部近傍に形成した電
極と、 前記電極間に跨って接続するように形成した少なくとも
CuとRu、又はCuとRuとから成る少なくとも酸化
物、水酸化物、炭酸塩、シュウ酸塩のいずれかの組み合
わせのうちの少なくとも2種を混合し加熱焼成した化合
物と、ガラスとよりなる厚膜正特性サーミスタ組成物
と、 前記厚膜サーミスタ組成物と前記電極の一部とを被覆す
る保護膜と、から成ることを特徴とする厚膜正特性サー
ミスタ。3. A substrate having a predetermined size of electrical insulation, electrodes formed near at least opposite ends of the substrate, and at least Cu and Ru formed so as to connect between the electrodes, or Thick film positive temperature coefficient thermistor composition composed of glass and a compound obtained by mixing and heating at least two kinds of any combination of oxides, hydroxides, carbonates and oxalates composed of Cu and Ru And a protective film covering the thick film thermistor composition and a part of the electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25533792A JP3255985B2 (en) | 1992-08-11 | 1992-08-11 | Thick film positive temperature coefficient thermistor composition, method for producing the same and thick film positive temperature coefficient thermistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25533792A JP3255985B2 (en) | 1992-08-11 | 1992-08-11 | Thick film positive temperature coefficient thermistor composition, method for producing the same and thick film positive temperature coefficient thermistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0661013A true JPH0661013A (en) | 1994-03-04 |
JP3255985B2 JP3255985B2 (en) | 2002-02-12 |
Family
ID=17277388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25533792A Expired - Fee Related JP3255985B2 (en) | 1992-08-11 | 1992-08-11 | Thick film positive temperature coefficient thermistor composition, method for producing the same and thick film positive temperature coefficient thermistor |
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JP (1) | JP3255985B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0923085A1 (en) * | 1997-06-16 | 1999-06-16 | Matsushita Electric Industrial Co., Ltd. | Resistance wiring board and method for manufacturing the same |
CN104464991A (en) * | 2013-09-12 | 2015-03-25 | 中国振华集团云科电子有限公司 | Method for preparing linear positive temperature coefficient thermistor slurry |
CN105741903A (en) * | 2016-05-06 | 2016-07-06 | 西安电子科技大学 | Preparation method of silver-doped modified ruthenium dioxide thick-film resistance slurry |
JP2018067640A (en) * | 2016-10-19 | 2018-04-26 | 住友金属鉱山株式会社 | Composition for positive temperature coefficient resistor, paste for positive temperature coefficient resistor, positive temperature coefficient resistor, and method for manufacturing positive temperature coefficient resistor |
JP2020151983A (en) * | 2019-03-20 | 2020-09-24 | ローム株式会社 | Thermal print head |
CN113405688A (en) * | 2021-06-22 | 2021-09-17 | 北京航空航天大学杭州创新研究院 | Nickel oxide-based wide-temperature-range high-precision temperature sensor and preparation method thereof |
-
1992
- 1992-08-11 JP JP25533792A patent/JP3255985B2/en not_active Expired - Fee Related
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0923085A1 (en) * | 1997-06-16 | 1999-06-16 | Matsushita Electric Industrial Co., Ltd. | Resistance wiring board and method for manufacturing the same |
EP0923085A4 (en) * | 1997-06-16 | 2005-12-28 | Matsushita Electric Ind Co Ltd | Resistance wiring board and method for manufacturing the same |
CN104464991A (en) * | 2013-09-12 | 2015-03-25 | 中国振华集团云科电子有限公司 | Method for preparing linear positive temperature coefficient thermistor slurry |
CN105741903A (en) * | 2016-05-06 | 2016-07-06 | 西安电子科技大学 | Preparation method of silver-doped modified ruthenium dioxide thick-film resistance slurry |
JP2018067640A (en) * | 2016-10-19 | 2018-04-26 | 住友金属鉱山株式会社 | Composition for positive temperature coefficient resistor, paste for positive temperature coefficient resistor, positive temperature coefficient resistor, and method for manufacturing positive temperature coefficient resistor |
JP2020151983A (en) * | 2019-03-20 | 2020-09-24 | ローム株式会社 | Thermal print head |
CN113405688A (en) * | 2021-06-22 | 2021-09-17 | 北京航空航天大学杭州创新研究院 | Nickel oxide-based wide-temperature-range high-precision temperature sensor and preparation method thereof |
CN113405688B (en) * | 2021-06-22 | 2023-08-11 | 北京航空航天大学杭州创新研究院 | Nickel oxide-based wide-temperature-range high-precision temperature sensor and preparation method thereof |
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